• 한국광학회지
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• 제6권3호
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• pp.214-221
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• 1995

레이저매질의 넓은 압력범위(0.5-3.5 기압)에 대해 70ns[FWHM]의 전자빔 가속기(800kV, 21kA)로 여기할 때 free-running XeF$(C\rightarrowA$ 엑시머 레이저의 출력과 Xe 농도와의 상호관계를 조사하였다. 공진기를 쌍색성의 출력거울로 구성하고, 레이저 출력을 레이저매질 $(Xe/F_2/Ar)$의 총압력과 가스혼합비의 함수로써 최적화 하였다. $F_2$ 0.46%를 고정한 조건에서 레이저 고유효율은 총압력 1, 2, 3기압에서 최대 0.38%, 1.03%, 0.29%로 측정되었다. 이때 레이저의 최대 고유효율은 레이저매질의 총압력이 낮을수록 높은 Xe 농도에서 높게 나타났다. 이같은 상호관계를 $XeF^*(C)$의 형성효율 및 XeF$(C\rightarrowA$ 레이저 추출 효율에 대해 동력학적으로 해석하므로써 Xe 농도의 의존성을 설명하였다. 그 결과로 대기압 XeF$(C\rightarrowA$ 레이저의 효율적인 동작을 제안한다.

• 한국광학회지
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• 제6권3호
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• pp.201-213
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• 1995

전자빔여기 XeF$(C\rightarrowA$ 엑시며 레이저의 상준위 B-와 C-상태에 대하여 충동혼합 운동과정을 포함하는 모델을 컴퓨터 시뮬레이션하여 이의 출력특성을 해석하였다 $XeF^*(B)$ 의 수밀도에 관련되는 $XeF^*(C)$의 형성에 대하여 레이저 에너지를 실험치와 비교하였다. 이 결과는 70ns[FWHM]의 전자빔(800kV, 21kA)을 사용한 대기압 매질에서 매우 좋은 일치$(28.5 mJ\pm5%)$를 보였고, $Xe/F_2/Ar=5.26/0.49/94.28%$의 최적화된 가스혼합비를 확인하였다. 또한 시뮬레이션으로 $XeF^*(C)$의 형성경로, $XeF^*(C)$의 완화경로, 청록색 파장대역의 흡수경로에 대한 $F_2$ 할로겐 도우너 및 Xe 압력의 함수관계를 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.233-233
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• 1999

본 연구에서는 2성분계 gas(Ne+Xe)를 사용하여 기체압력(p), 진동수(f)에 따라 VUV(Vacuum Ultra Violet) spectrum 147, 173nm 파장과 IR(Infrared) spectrum 823nm, 828nm을 Vacuum Monochromator(Acton-VM 507)를 통해 측정하였다. 휘도(Luminance)와 전력(Power)측면에서 Ne+ Xe 최적의 가스 조성비를 찾기 위해서 Xe의 혼합비에 따른 IR영역인 823nm, 828nm을 측정결과, Xe 4%일 때 좋은 효율을 나타냈다. 기체압력이 200Torr에서는 Xe(3P1)에 기인하는 147nm가 주요한 파장이며, 기체압력이 400Torr, 600Torr일때는 Xe(3P2)에 기인하는 173nm 파장이 주요함을 알 수 있었다. 또한 공간 방전 이미지를 전압 pulse 인가후 ICCD Camera(V-Tek)의 Ready time, On Time을 조절하면서 50ns delay로 관측하였다. 향후 실험계획은 실제 상용화되고 있는 혼합가스 He+Ne+Xe의 조성비에 따른 자세한 실험을 할 것이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.339-342
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• 2003

Main PDP panel efficacy improvement factors are discussed. A large panel efficacy improvement can be obtained through a combination of discharge efficiency improvement and phosphor improvement. Important design elements are a high Xe-content gas mixture, the application of a $TiO_2-layer$, and a new green phosphor with little saturation at high VUV-load. In a 4-inch color test panel with a conventional stripe-type cell configuration a white efficacy of 4.4 lm/W and a luminance of 5000 $cd/m^2$ is obtained for sustaining at 250V in addressed condition.

• 공업화학
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• 제21권4호
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• pp.475-478
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• 2010

불소화 반응을 통하여 PDMS을 질소 분위기 하에서 $50{\sim}2000\;{\mu}mol/mol$ 농도의 불소 가스($F_2$)를 사용하여 직접적인 방법으로 복합막 표면개질을 하였고 이를 OM (Optical Microscope), AFM (Atomic Force Microscope), SEM (Scanning electron microscope), FT-IR (Fourier transform infrared spectroscopy)을 측정하여 막 표면을 연구하였고 GC (Gas chromatography)로 혼합 노블가스의 기체 거동을 조사하였다. 다양한 노블 혼합 가스를 사용하여 표면 개질된 PDMS 멤브레인의 선택도가 50% 향상 되었다.

• Applied Microscopy
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• 제45권4호
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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• pp.169-172
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• 1997

MgO dielectric pprotection layer is ppreppared by R.F. reactive magnetron spputtering with Mg target under various conditions of spputtering ppressure, time and substrate tempperature. Discharge characteristics of ppDpp is also studied as a pparameter of MgO pprepparation conditions. As the working ppressure and substrate tempperature was increase, the discharge voltage was decreased. Two kinds of MgO ppreppared both spputtering and E-beam methods were stable after annealing at 35$0^{\circ}C$ for 120min. discharge voltage under 3 mixed gas(He+Xe0.2%+Ne30%) was V=130V, V=102V and ${\gamma}$ coefficient was twiced as much as that of dielectric layer.

• 센서학회지
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• 제22권5호
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• pp.369-373
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• 2013

In this paper, we developed contact type temperature sensor with single crystal silicon strip thermopile. This sensor consists of 15 p-type single crystal silicon strips, 17 n-types and contact electrodes on silicon dioxide silicon membrane. The result of electromotive force measuring showed very good characteristic as $15.18mV/^{\circ}C$ when temperature difference between the two ends of the thermopile occurs by applying thermal contact on the thermopile which was fabricated with silicon strip of $200{\mu}m$ length, $20{\mu}m$ width, $1{\mu}m$ thickness.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1613-1616
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• 2007

A microgripper using thermal actuator and SU-8 polymer was designed and fabricated to manipulate cells and microparts. A chip size of a microgripper was 3 mm ${\times}$ 5 mm. The thermally actuated microgripper consisted of two couples of hot and cold arm actuators. The high thermal expansion coefficient, 52 $ppm/^{\circ}C$, of SU-8 compared to silicon and metals, allows the actuation of the microgripper. Thickness and width of SU-8 as an end-effector were 26 ${\mu}m$ and 80 ${\mu}m$, respectively. Initial gap between left jaw and right jaw was 120 ${\mu}m$. The ANSYS program as FEM tool was introduced to analyze the thermal distribution and displacement induced by thermal actuators. $XeF_2$ gas was used for isotropic silicon dry etching process to release SU-8 end-effector. Mechanical displacements of the fabricated microgripper were measured by optical microscopy in the range of input voltage from 0 V to 2.5 V. The maximum displacement between two jaws of a microgripper Type OG 1_1 was 22.4 ${\mu}m$ at 2.5 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).