• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.120-126
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• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.291-294
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• 2014

In this study, a chemiresistive sensor based on one-dimensional $WO_3$ nanostructures is presented for application in non-invasive medical diagnostics. $WO_3$ nanostructures were used as an active gas sensing layer and were deposited onto a $SiO_2/Si$substrate using Pt interdigitated electrodes (IDEs). The IDE spacing was $5{\mu}m$ and deposition was performed using RF sputter with glancing angle deposition mode. Pt IDEs fabricated by photolithography and dry etching. In comparison with thin film sensor, sensing performance of nanostructure sensor showed an enhanced response of more than 20 times when exposed to 50 ppm acetone at $400^{\circ}C$. Such a remarkable faster response can pave the way for a new generation of exhaled breath analyzers based on chemiresistive sensors which are less expensive, more reliable, and less complicated to be manufactured. Moreover, presented sensor technology has the potential of being used as a personalized medical diagnostics tool in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.105-108
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• 1998

Pt-WO$_3$-Si$_3$N$_4$-SiO$_2$-Si-Al 캐패시터를 이용한 NO$_2$ 가스 센서를 개발하였다. 표준 실리콘 MNOS구조에 촉매 게이트로 Pt와 가스 흡착층으로 WO$_3$를 이용함으로서 전통적인 세라믹 가스 센서보다 낮은 온도에서 NO$_2$ 가스를 감지할 수 있었다. 은도 변화와 NO$_2$ 가스 농도의 변화에 따라서 디바이스의 NO$_2$ 가스 감도를 조사하였다. Pt-WO$_3$ 계면에서 NO$_2$ 이온농도의 변화에 기초로 한 가스 감지 모델을 제시하였다. 제시된 가스 감지 모델을 계면에서의 가스 반응 속도론에 의하여 분석함으로서 확인하였다.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.263-268
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• 2009

With the increasing number of automobiles, the problem of air pollution from the exhaust gases of automobiles has become a critical issue. The principal gases that cause air pollution are nitrogen oxide or NO$_x$(NO and NO$_2$), and CO. Because NO$_x$ gases cause acid rain and global warming and produce ozone(O$_3$) that leads to serious metropolitan smog from photochemical reaction, they must be detected and reduced. Mixtures of WO$_3$ and $In_2O_3$(WO$_3$:$In_2O_3$=10:0, 7:3, 5:5, 3:7, and 0:10 in wt.%), which are NO$_x$ gas-sensing materials, were prepared, and thick-film gas sensors that included a heater and a temperature sensor were fabricated. Their sensitivity to NO$_x$ was measured at 250$\sim$400$^{\circ}C$ for NO$_x$ concentrations of 1$\sim$5 ppm. The $In_2O_3$ thick-film sensor showed excellent sensitivity($R_{gas}/R_{air}$=10.22) at 300$^{\circ}C$ to 5-ppm NO. The response time for 70 % saturated sensitivity was about 3 seconds, and the sensors exhibited very fast reactivity to NO$_x$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1001-1006
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• 1998

$WO_3$ based semiconduction sensor have been reported to have excellent sension properties to $NO_x$ gases by many researchers. In this study appropriate $WO_3$ precursor have been chosen and thin film sensors were fabricated by metallo organic deposition process. Their sensing characteristics were investigated as a function of NO concentration, heat treatment, and measuring temperature. Tungsten dichloro triethoxide was found to be a good precursor for $WO_3$ thin film in this method. Samples heat treated at $600^{\circ}C$ showed sensitivity (S) 200 to 50 ppm NO gas when measuring temperature was $150^{\circ}C$.

• 한국전기화학회:학술대회논문집
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• 1998.10a
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• pp.26-26
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.187-189
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• 1995

A Surface Acoustic Wave Gas sensor for NO, CO, H$_2$gas detection was designed fabricated, and tested. A delay line device was designed to composite a single mode SAW oscillator which enables to measure a SAW velocity. To reduce the effect of temperature and humidity, dual delay line oscillator circuit was used. And final output was measured by digital frequency counter. NO, CO, H$_2$gas were detected by WO$_3$thin film deposited on the path of the Delay Line.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.12-17
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• 2018

$In_2O_3$ doped $WO_3$ powders were prepared by a polymer solution route and their $NO_2$ gas sensing properties were analyzed. The synthesized powders showed nano-sized particles with specific surface areas of $6.01{\sim}21.5m^2/g$ and the particle size and shape changed according to the content of $In_2O_3$. The gas sensors fabricated with the synthesized powders were tested at operating temperatures of $400{\sim}500^{\circ}C$ and 100~500 ppm concentrations of $NO_2$ atmosphere. The particle size and $In_2O_3$ content affected on the initial sensor resistance in an air atmosphere. The highest sensitivity (8.57 at $500^{\circ}C$), which was 1.77 higher than the sensor consisting of the pure $WO_3$ sample, was measured in the 0.5 mol% $In_2O_3$ doping sample. In addition, the response time and recovery time were improved by the addition of $In_2O_3$.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.188-196
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• 1998

The sensing and electrical characteristics of $WO_{3}$-based n-type semiconductor gas sensors are investigated. In normal air condition, $TiO_{2}$(4 wt. %)-doped $WO_{3}$-based sensor fabricated without any binder shows the grain boundary ( GB ) potential barrier height of 0.26 V. Sensors fabricated with alumina, PVA and silica sol binders show 0.17, 0.22 and 0.26 V of GB potential barrier height, respectively. In the ambience of 120 ppm $NO_{x}$ concentration, the GB potential barrier height of the sensor fablicated without binder is increased to 0.59 V. The sensors were fabricated with alumina, PVA, silica sol binders show 0.43, 0.66 and 0.52 V of potential barrier, respectively. Thus the variation of the potential barrier at GB is largest in the sensor fabricated with the PVA binder. This is found to be the main reason why the sensor fabricated with the PVA binder shows the best sensitivity. It is also found that the decrease of sensitivity at a temperature higher than the optimum operation temperature is due to the temperature dependence of the sensor resistance in normal air condition rather than the desorption of the adsorbed $NO_{x}$ gas particles. In the ambience of 250 ppm CO concentration, the GB potential barrier heights of the sensors fabricated without binder and with PVA binder are about 0.2 V showing negligible change compared to the case of normal air ambience. This fact indicates that these sensors are good candidates for the selective detection of $NO_{x}$ gas in the mixture of CO and $NO_{x}$ gases.

• Journal of Sensor Science and Technology
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• v.21 no.4
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• pp.283-286
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• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.