• 제목/요약/키워드: $WO_3$ films

검색결과 102건 처리시간 0.03초

Characterization of Hexagonal Tungsten Bronze CsxWO3 Nanoparticles and Their Thin Films Prepared by Chemical Coprecipitation and Wet-Coating Methods

  • Kwak, Jun Young;Hwang, Tai Kyung;Jung, Young Hee;Park, Juyun;Kang, Yong-Cheol;Kim, Yeong Il
    • 대한화학회지
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    • 제62권2호
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    • pp.118-123
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    • 2018
  • The hexagonal tungsten bronze $Cs_xWO_3$ nanoparticle was synthesized by a chemical coprecipitation method of ammonium tungstate and $Cs_2CO_3$ in acidic condition. This synthetic method for cesium tungsten bronze is reported for the first time as far as we know. The synthesized $Cs_xWO_3$ as precipitated showed a weak crystallinity of hexagonal unit cell with a crystallite size of about 4 nm without annealing. When the synthesized $Cs_xWO_3$ was annealed in $N_2$ atmosphere, the crystallinity and crystallite size systematically increased maintaining the typical hexagonal tungsten bronze structure as the annealing temperature increased. The analyzed Cs content in the bronze was about 0.3 vs W, which is very close to the theoretical maximum value, 1/3 in cesium tungsten bronze. According to XPS analysis, the reduced tungsten ions existed as both the forms of $W^{5+}$ and $W^{4+}$ and the contents systematically increased as the annealing temperature increased up to $800^{\circ}C$. The $Cs_xWO_3$ thin films on PET substrate were also prepared by a wet-coating method using the ball-milled solution of the annealed $Cs_xWO_3$ nanoparticles at various temperatures. The near-infrared shielding property of these thin films increased systematically as the annealing temperature increased up to $800^{\circ}C$ as expected with the increased contents of reduced tungsten ions.

산화제 첨가에 따른 WO3 박막의 CMP 평탄화 특성 (Planarization Characteristics of CMP for WO3 Film with an Addition of Oxidizers)

  • 이우선;고필주;김남훈;서용진
    • 한국전기전자재료학회논문지
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    • 제18권1호
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    • pp.12-16
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    • 2005
  • Chemical mechanical polishing (CMP) process is one of the most useful methods for improving the surface roughness of films. The effects of CMP on the surface morphology of WO$_3$ films prepared by RF sputtering system were investigated in this paper. A removal rate of films increased, and the uniformity performance of surface decreased with the addition of an oxidizer to the tungsten slurry. Non-uniformity performance of surface was superior as its value was below 5 % when oxidizers of 5.0 vol% and 2.5 vol%, respectively, were added to the tungsten slurry. The optimized oxidizer concentration, reflected both the improved roughness values and hillock-free surface with the good uniformity performance, was 5.0 vol% as an atomic force microscopy(AFM) analysis of thin film topographies. Our CMP results will be a useful reference for advanced technology of thin films for gas sensor applications in the near future.

기판 및 열처리 온도에 따른 SrWO4:Dy3+, Eu3+ 형광체 박막의 특성 (Effects of Substrate and Annealing Temperatures on the Properties of SrWO4:Dy3+, Eu3+ Phosphor Thin Films)

  • 김정윤;조신호
    • 한국재료학회지
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    • 제26권10호
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    • pp.577-582
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    • 2016
  • $Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

박막형 $WO_{3}$계 가스센서의 NOx 감도 특성 (NOx Sensing Characteristics of the $WO_{3}$-Based Thin-Film Gas Sensors)

  • 유광수
    • 센서학회지
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    • 제5권5호
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    • pp.39-46
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    • 1996
  • $WO_{3}$에 미량의 Pd 또는 Pt가 첨가된 박막을 이용한 NOx 센서를 제조하였다. $WO_{3}$계 박막은 고진공, 저항가연식 evaporator를 이용하여 분위기온도에서 증착한 다음 $500^{\circ}C$에서 열처리하였다. 5 ppm의 $NO_{2}$가스에 대하여 $200^{\circ}C$에서 측정한 가스감도($R_{gas}/R_{air}$)는 0.5 wt.% $Pt-WO_{3}$ 센서에서 50으로서 최대값을 가졌다.

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이종 접합 구조를 갖는 TiO2/WO3 이중 박막의 광유기 친수 특성 (Photoinduced Hydrophilicity of Heterogeneous TiO2/WO3 Double Layer Films)

  • 오지용;이병로;김화민;이창현
    • 한국전기전자재료학회논문지
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    • 제28권11호
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    • pp.715-720
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    • 2015
  • The photoinduced hydrophilicity of $TiO_2/WO_3$ double layer films was fabricated by using a conventional rf-magnetron sputtering method. The photoinduced hydrophilic reaction of the $TiO_2$ surface was enhanced by the presence of $WO_3$ under the $TiO_2$ layer by irradiation of a 10 W cylindrical fluorescent light bulb. However, when the $TiO_2$ and $WO_3$ layers were separated by an insulating layer, the surface did not appeared high hydrophilic, under the same light bulb. The enhanced photoinduced hydrophilic reaction can be explained by the charge transfer between $TiO_2$ and $WO_3$ layers. It was also demonstrated that visible light passing through the $TiO_2$ layer could excite $WO_3$. Thus, visible light can be used for the hydrophilic reaction in the present $TiO_2/WO_3$ system.

저항-전압변환회로를 이용한 $WO_3$ 박막의 수소검지 특성 측정 (Hydrogen Detecting Characteristics of the $WO_3$ Films Using the R/V Converting Circuit)

  • 이동희;고중혁;김영환;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.767-769
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    • 1998
  • Using the R/V converting circuit, hydrogen detecting characteristics of the $WO_3$ films were investigated. The R/V converting circuit is configured with the equivalently constant current driving method connecting an unknown resistor to be measured in the feedback loop of the or-amr rather than using a separated constant current circuit. The response time of the reference voltage for the R/V converting circuit was simulated by the circuit simulator "SABER", and it was found that the response time in the high resistance range become longer and the error amounts to 10%. From the simulation results. replacing the capacitor in the feedback loop of the second stage or-amp with a 0.001uF capacitor, when measuring in the high resistance range, the response characteristics are remarkably improved. The response time was shortened from about 10 seconds to below 1 second. Using this circuit, the effect of $WO_3$ films deposited by sputtering method on hydrogen was measured.

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증착조건 및 후-열처리에 따른 $WO_3$박막의 구조와 전기착색 특성 (The Structure and Electrochromic Characteristics of $WO_3$ thin Film with deposition Conditions and Post-Annealing)

  • 조형호;임원택;안일신;이창효
    • 한국진공학회지
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    • 제8권2호
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    • pp.141-147
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    • 1999
  • The electrochromic characteristics of tungsten oxide films are largely affected by deposition conditions, such as substrate temperature and gas flow rate and also post-annealing. We have considered gas flow rate and temperature as important factors having an effect on an electrical, optical phenomenon and structural variation of $WO_3$ . The tungsten oxide films were deposited onto ITO(20$\Omega\box$, 1000$\AA$) using rf magnetron sputtering method. In particular, the films deposited at room temperature were annealed at various temperatures in air. All specimens had crystal structure except one being deposited at room temperature with nearly amorphous-like structure. The specimen deposited at $100^{\circ}C$ had a structure in which the increase in deposition temperature. The specimen deposited at $100^{\circ}C$ had a structure in which the cations$(Li^+)$ are easily movable because of void boundaries induced by regularly arrayed large grains. The specimen deposited at $300^{\circ}C$ had a dense structure with small grains but it exhibited the large mobility and charge density in $WO_3$ because of distinct grain boundaries.

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Electrochromic 막의 특성과 물질이동 방지막의 효과에 대한 연구 (Studies on the properties of electrochromic films and the effect of migration barrier)

  • 황하룡;백지흠;허증수;이덕동;임정옥;장동식
    • 한국진공학회지
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    • 제9권3호
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    • pp.221-226
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    • 2000
  • 졸겔법 및 진공증착법으로 $WO_3$$V_2O_5$ 박막을 제조하고, 리튬이온을 이용하여 전기변색 소자를 제작한 후 광학적 특성을 조사하였다. 측정결과 졸겔법으로 제조된 $WO_3$ 박막과 $V_2O_5$ 박막을 수증기 분위기에서 $500^{\circ}C$로 1시간 열처리한 경우 가장 우수한 투과율 변화량을 나타내었다. 정.역방향 동작을 거듭할수록 $WO_3$막의 텅스텐과 ITO막의 인듐이 상호 확산하는 것을 관찰할 수 있었으며 이를 방지하기 위해 수백 $\AA$의 텅스텐 박막을 ITO와 $WO_3$막 사이에 삽입한 결과, cyclic voltamogram의 peak의 감소량이 1/10 이하로 감소하였으며, 리튬이온의 흐름에 의한 인듐과 텅스텐의 이동을 효과적으로 방지할 수 있었다.

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$WO_3$ 박막의 일렉트로크로믹 특성 (The Electrochromic Properties of Tungsten Oxide Thin Films)

  • 박승희;정주영;조봉희;김영호
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
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    • pp.54-54
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    • 1992
  • ITO투명전극/WO$_3$박막/LiClO$_4$-PC/백금 대향전극 구조를 갖는 일렉트로 크로믹 소자를 구성하여 WO$_3$박막의 일렉트로크로믹 특성을 조사하였다. WO$_3$박막의 coloration의 LiClO$_4$-PC 유기전해질과 ITO 투명전극으로부터 Li$^{+}$이온과 전자들의 이중주입에 의하여 청색으로 나타났으며, 전기화학전인 산화반응에 의하여 bleaching 현상이 가역적으로 일어났다. Coloration 과 bleaching 현상, 광학밀도, 구동전압 및 응담속도등의 일렉트로크로믹 특성은 WO$_3$ 박막의 성장 조건, WO$_3$박막 두께, ITO 투명전극의 sheet resistance, 대향전극 및 인가전압에 크게 의존하는 것으로 밝혀졌다.

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