• 제목/요약/키워드: $WO_3$ films

검색결과 102건 처리시간 0.031초

볼밀시간에 의한 WO3:In2O3 가스센서의 감응특성 (Gas Sensing Characteristics of WO3:In2O3 Prepared by Ball-mill Time)

  • 신덕진;유윤식;박성현;유일
    • 한국재료학회지
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    • 제21권6호
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    • pp.299-302
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    • 2011
  • [ $WO_3$ ]powders were ball-milled with an alumina ball for 0-72 hours. $In_2O_3$ doped $WO_3$ was prepared by soaking ball-milled $WO_3$ in an $InCl_3$ solution. The mixed powder was annealed at $700^{\circ}C$ for 30 min in an air atmosphere. A paste for screen-printing the thick film was prepared by mixing the $WO_3$:In2O3 powders with ${\alpha}$-terpinol and glycerol. $In_2O_3$ doped $WO_3$ thick films were fabricated into a gas sensor by a screen-printing method on alumina substrates. The structural properties of the $WO_3$:$InO_3$ thick films were a monoclinic phase with a (002) dominant orientation. The particle size of the $WO_3$:$InO_3$ decreased with the ball-milling time. The sensing characteristics of the $In_2O_3$ doped $WO_3$ were investigated by measuring the electrical resistance of each sensor in the test-box. The highest sensitivity to 5 ppm $CH_4$ gas and 5 ppm $CH_3CH_2CH_3$ gas was observed in the ball-milled $WO_3$:$InO_3$ gas sensors at 48 hours. The response time of $WO_3$:$In_2O_3$ gas sensors was 7 seconds and recovery time was 9 seconds for the methane gas.

기판온도가 전자비임으로 제작된 텅스텐 산화물박막의 화학적 안정성에 미치는 영향 (The influence of substrate temperature on the chemical stability of WO3Films prepared by electron beam deposition)

    • 한국진공학회지
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    • 제5권4호
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    • pp.365-370
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    • 1996
  • 전기적 착색 텅스텐 산화물박막의 전자비임 증착으로 제작하였으며 제작된 막의 화학적 안정성의 기판온도 의존성을 연구하였다. 실험결과로부터, 제작된 시료의 광학적 특성과 화학적 안정성은 강하게 기판온도에 의존하였다. 기판온도 $80^{\circ}C$에서 제작된 $WO_3$막은 유기성 용액 0.6몰 $LiClO_4$속에서 착색과 탈색이 반복되어도 가장 안정하였다.

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전자비임에 의해 제작된 WO$_3$ 박막의 전기적착색 특성에 대한 진공도의 효과 (The Vacuum Pressure Effects on Electrochromic Properties of Tungsten Oxide Thin Films by Electron Beam Evaporation)

  • 이길동
    • 한국에너지공학회:학술대회논문집
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    • 한국에너지공학회 1995년도 춘계학술발표회 초록집
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    • pp.41-44
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    • 1995
  • The electrochromic WO$_3$ thin films were prepared by using an electron - beam evaporation technique. The influence of the electron - beam evaporation conditions. especially the vacuum pressure, and resistance of ITO substrate on the structural and electrochromic properties of the investigated film was presented. This films showed electrochromic behavior in an aqueous electrolyte of 1 M H$_2$SO$_4$. Among these WO$_3$ thin films, films prepared at a vacuum pressure of 10$^{-4}$ mbar were found to be most stable in terms of cycling durability. The chemical stability of film against dissolution in the aqueous solution was also shown to depend on the quantity of water in the film.

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전기적착색 $WO_3$ 박막의 투과율과 내구성 (Transmission and Durability of Electrochromic WO3 Thin Films)

  • 이길동
    • 태양에너지
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    • 제19권1호
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    • pp.1-8
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    • 1999
  • Electrochromic $WO_3$ thin films were prepared by electron beam deposition. The transmission and durability of films were investigated. Coloring and bleaching experiments were repeated in an electrolyte of propylene carbonate with 0.6M of $LiClO_4$ by cyclic voltammetry. Spectrophotometer was used to measure the transmission in the degraded films. The 5000 ${\AA}$ thick film was found to be the stable after repeated cycles. The durability of the annealed film also showed improvements over unannealed samples. Tungsten oxide films with titanium content of about $10{\sim}15$ mol% was found to be most stable, undergoing the least degradation during the repeated cycles.

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상보형 전기변색소자용 $V_2O_5$박막의 대향전극 특성 (Characterization of $V_2O_5$ thin films as a counter electrode for complementary electrochromic devices)

  • 조봉희;김영호
    • E2M - 전기 전자와 첨단 소재
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    • 제9권7호
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    • pp.690-695
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    • 1996
  • We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

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산화물 반도체형 후막 가스 센서의 이산화질소 감지 특성 ($NO_{2}$ Sensing Properties of Oxide Semiconductor Thick Films)

  • 김승렬;윤동현;홍형기;권철한;이규정
    • 센서학회지
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    • 제6권6호
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    • pp.451-457
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    • 1997
  • 산화물 반도체를 이용한 후막형 가스센서의 이산화질소에 대한 감지특성을 조사하였다. 기본 감지물질로는 $WO_{3}$, $SnO_{2}$, ZnO를 사용하였고, 여기에 다른 산화물 반도체를 소량 첨가하여 이산화질소에 대한 감지특성을 실험하였다. 동작온도에 따른 후막센서의 감지특성에서 감도, 회복특성을 고려할 때, $WO_{3}$$SnO_{2}$계 감지물질은 $300^{\circ}C$, ZnO계 감지물질은 $220{\sim}260^{\circ}C$ 정도의 동작온도에서 최적의 감지특성을 보였다. 그러나, ZnO계 감지물질은 큰 센서저항으로 인해 안정한 신호를 얻을 수 없었다. 오존, 암모니아, 에탄올, 메탄, 일산화탄소/프로판 혼합가스에 대한 선택성 실험에서 $WO_{3}$-ZnO(3 wt.%)와 $SnO_{2}-WO_{3}$(3 wt.%) 후막센서가 가장 우수한 이산화질소 감지특성을 보였다. 또한, 이들 후막센서들은 반복실험 및 농도의존성 실험을 통해서도 우수한 신호재현성을 보였으며 특히, 1 ppm 이하의 이산화질소를 검지, 정량화 할 수 있음을 보여 주었다.

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물분해로부터 수소 제조를 위한 광촉매용 텅스텐 산화물 박막 제조 (Preparation of WO3 by using sol-gel method for photoelectrode and its application for PEC cell)

  • 홍은미;임동찬
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 춘계학술대회 논문집
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    • pp.101-101
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    • 2015
  • Photoelectrochemical water splitting is considered as a promising method of transforming solar energy into chemical energy stored in the type of hydrogen. An n-type $WO_3$ semiconductor is one of the most promising photoanodes for hydrogen production from water splitting. Films annealed at lower temperatures consisted of amorphous, whereas films annealed above $500^{\circ}C$ comprised solely of monoclinic $WO_3$. In this study, we observed photoactivity of $WO_3$ as increasing thickness of $WO_3$. And it shows good photoacivity as thickness increases. Also we tried to improve photoactivity through surface modification and bulk modification by using hydrogen treatment and conducting polymer. The photocurrent was measured in potentiostatic method with the three electrode system. A Pt wire and Ag / AgCl electrode were used as the counter electrode and the reference electrode, respectively. photocurrent-time (I-T) curve was measured at a bias potential of 0.79 V.

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화학기상 증착법을 이용하여 제조된 텅스텐 산화막의 전기변색 소자 응용 연구 (Preparation of $WO_3$ Films by CVD and their Application in Electrochromic Devices)

  • 정훈;선우창신;김도형
    • Korean Chemical Engineering Research
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    • 제49권4호
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    • pp.405-410
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    • 2011
  • 본 연구에서는 화학 증착법을 이용하여 텅스텐 산화물을 제조한 후 기판 온도에 따른 성막 특성을 분석하고, 성막 된 텅스텐 산화물을 전기 변색 소자 제조에 응용하여 소자 특성을 살펴보았다. 증착 온도 $300^{\circ}C$ 이상에서 최대 성막속도($8{\mu}m/min$)를 얻을 수 있었으며, $275^{\circ}C$ 이하에서는 표면 반응 율속 특성을 보였고 이때 겉보기 활성화 에너지 값은 45.9 kJ/mol이였다. 성막 된 텅스텐 산화물은 $275^{\circ}C$ 이하에서는 비정질막이, 그 이상 온도에서는 결정질 막이 형성되었다. 전기 변색 소자 적용시 유리한 비정질막이 성막되는 조건에서 증착 온도 및 두께 변화에 따른 전기 변색 특성을 평가하였다. 증착 온도가 동일한 경우 두께가 두꺼울수록 그리고 두께가 일정한 경우는 증착 온도가 낮을수록 변색 효율 측면에서 유리한 결과를 얻었다.

용액적하법으로 제조된 WO3 첨가 SnO2 박막의 가스감응 특성 (Gas Sensing Characteristics of WO3-Doped SnO2 Thin Films Prepared by Solution Deposition Method)

  • 최중기;조평석;이종흔
    • 한국재료학회지
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    • 제18권4호
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    • pp.193-198
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    • 2008
  • $WO_3$-doped $SnO_2$ thin films were prepared in a solution-deposition method and their gas-sensing characteristics were investigated. The doping of $WO_3$ to $SnO_2$ increased the response ($R_a/R_g,\;R_a$: resistance in air, $R_g$: resistance in gas) to $H_2$ substantially. Moreover, the $R_a/R_g$ value of 10 ppm CO increased to 5.65, whereas that of $NO_2$ did not change by a significant amount. The enhanced response to $H_2$ and the selective detection of CO in the presence of $NO_2$ were explained in relation to the change in the surface reaction by the addition of $WO_3$. The $WO_3$-doped $SnO_2$ sensor can be used with the application of a $H_2$ sensor for vehicles that utilize fuel cells and as an air quality sensor to detect CO-containing exhaust gases emitted from gasoline engines.

졸겔 $WO_3$박막의 특성 (Properties of Sol-gel $WO_3$ thin films)

  • 이길동
    • 한국진공학회지
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    • 제10권1호
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    • pp.61-66
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    • 2001
  • $WO_3$ 박막은 졸겔방법으로 텅스텐 알코산화물 용액을 사용하여 마이크로 슬라이드유리와 ITO 유리기판위에 여러번 침적도포시켜 다층박막형으로 제작하였다. 침적도포와 시료제조 공정인자가 박막의 구조, 광학적 및 전기화학적 특성에 미치는 영향이 연구되었다. 텅스텐 알코산화물 용액을 사용하여 증착속도를 0.005m $s^{-1}$로 하여 제작된 박막은 매우 균일하였으나 증착속도를 0.007m $s^{-1}$ 보다 크게 하여 제작된 시료의 두께는 상당한 변화를 보였다. 전기화학적 착색 실험결과 박막은 $200^}\circ}C$보다 낮은 온도에서 열처리된 시료는 쉽게 착색이 되었다. 라더포드 후방산란법에 의해 착색된 시료에서의 $K^+$ 이온들은 막 속에 균일하게 분포되어 있었다.

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