• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1165-1169
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• 1998

A single crystal cast blade was manufactured by CMSX 6, one of the first generarion nickel based single crystal superalloys by the selector method in a vacuum furnace. The single crystal has been grown with cooling rate of 2.5 mm/min, after pouring the molten alloy of 163$0^{\circ}C$ to the mold heated to 150$0^{\circ}C$. The cast structure could be classified into matrix (dendrite) and eutectic regions in ${\gamma}$'shape and size. The eutectic region showed higher Ti content. As the additional results of ${\gamma}$'precipitates by EPMA and CBED analysis the ${\gamma}$'size was less than 0.5~0.7$\mu\textrm{m}$, showing the chemical composition close to Ni$_3$Al of Ll$_2$ lattice structure. But ${\gamma}$'size has increased to bigger than 1.0$\mu\textrm{m}$, being near to eutectic region, changing its shape to bar or huge block types. These showed the chemical structure near to Ni$_3$Ti of D $O_{24}$ lattice structure. Therefore, ${\gamma}$'morphology of dendrite and eutectic regions depends absolutely on its chemical composition and lattice structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.353-353
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• 2014

본 연구에서는 Sputter를 이용하여 Room Temp.에서 증착된 NbOx 박막의 열처리에 따른 결정도를 분석하고, 이러한 결정도의 변화가 Metal Insulator Transition특성에 의한 Threshold switching에 어떠한 영향을 미치는 지에 대하여 연구하였다. NbOx 박막의 threshold switching 특성 분석을 위해, 1.4um의 TiN 위에 15nm의 NbOx를 증착하고 Top Electrode로 Pt를 증착하여 측정하였다. 증착된 NbOx는 Nb metal target으로 Reactive Sputter를 이용하여 Room Temp.에서 증착하였으며, 조성은 Partial Oxygen Pressure를 이용하여 조절하였다. 증착된 박막의 결정도는 TEM 및 XRD를 통하여 분석하였고 조성은 XPS를 이용하여 분석하였다. Sputter로 NbOx 증착 시 Partial Oxygen Pressure에 따른 조성을 XPS로 확인한 결과, Partial Oxygen Pressure 2%에서 NbOx의 조성을, 5%이상일 경우, Nb2O5의 조성을 가지는 것으로 확인되었다. Partial Oxygen Pressure 2%에서 증착한 NbOx 박막의 열처리에 따른 결정도를 분석한 결과, As-Dep상태에서는 amorphous상태였다가 600'C이상으로 1분간 열처리를 하였을 때 NbOx의 결정도가 증가함을 확인하였다. I-V 특성 측정 결과, 열처리 온도가 증가함에 따라 initial current가 점진적으로 증가하는 경향을 보이는데, 이는 열처리 시 amorphous상에서 poly-crystalline으로 미세구조의 변화가 일어나면서 grain boundary가 생성되며 생성된 grain boundary를 통해 leakage current가 증가하는 것으로 추측된다. 또한, 결정도가 증가함에 따라 electro-forming voltage가 감소하는 경향을 보이며 안정된 threshold switching 특성을 보이고 있다. 특히, 700'C 1분간 열처리 시에는 electro-forming 과정이 없이 threshold switching이 나타나는 현상이 관찰되었다. 이로 미루어 보아, threshold switching에서 나타나는 forming 현상은 local joule heating에 의해 박막이 결정화 되는 과정으로 추측된다. 결론적으로, 박막의 결정도가 initial current 및 Threshold switching 특성에 큰 영향을 미치는 것으로 예상된다.

• Korean Journal of Microbiology
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• v.36 no.3
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• pp.216-220
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• 2000

Eighty-eight strain3 o~methicillin resistant Stopllylococcus awecis were Isolated from pus (64.7%); spuhm (26.2%), blood, fluid, andurine of 83 patients at Dong-A Hospital in P~~san to invesligate theil-coagulase typ- Ing, and multi-drug resistaut ppattems. The presence of niec A gene confe~~ing melhicillin resistance was tested by polymerase chain reaction (PCR) with uwo mec A gene specific primers using purified clromosonlal DNA as templates. DNA fragments of expected size wel-e detected frorn 86 strains, but not from two strains. !i coagulase typmg, the 86 isolates were assigned to 5 coagulase lypes, I, 11, lll. 1V, VI, VII, VIlI, but there was no isolate helong lo type V. The most abundant coagulase type was type TI(50 %), lollowed by type IV Rest ofthe coagulase types were ininor; ranging fmm 4.5 to 12.5 '% Most of the type I1 ~netlucillin resistant Stapl\ulcorneryiococcus nwem (MRSA) strams were isolated from the generd sulzely ward, but major strains of type IV were Isolated from the otorhinolq~ngology of the hospital's outpatient clinic center. All of the 88 st~nins were sensitive to vancomycin and teicoplanin, but 71 (81%) strains showed multi-drug resitant to penicillin, cephalotl~n, eiythroinycin, gentan~ycin, imipenem, clindamycin, ciprofloxacin and ooxacillin. Yo relationship was found between the antibiotic resistance pattems aud the coagulase typing patterns.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.1-4
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• 2006

White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• Macromolecular Research
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• v.17 no.12
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• pp.963-968
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• 2009

Liquid crystal (LC; E7 and/or ML-0249)-embedded, poly(vinylidenefluoride-co-hexafluoropropylene) (PVdF-co-HFP)-based, polymer electrolytes were prepared for use in dye-sensitized solar cells (DSSCs). The electrolytes contained 1-methyl-3-propylimidazolium iodide (PMII), tetrabutylammonium iodide (TBAI), and iodine ($I_2$), which participate in the $I_3^-/I^-$ redox couple. The incorporation of photochemically stable PVdF-co-HFP in the DSSCs created a stable polymer electrolyte that resisted leakage and volatilization. DSSCs, with liquid crystal(LC)-embedded PVdF-co-HFP-based polymer electrolytes between the amphiphilic ruthenium dye N719 absorbed to the nanocrystalline $TiO_2$ photoanode and the Pt counter electrode, were fabricated. These DSSCs displayed enhanced redox couple reduction and reduced charge recombination in comparison to that fabricated from the conventional PVdF-co-HFP-based polymer electrolyte. The behavior of the polymer electrolyte was improved by the addition of optimized amounts of plasticizers, such as ethylene carbonate (EC) and propylene carbonate (PC). The significantly increased short-circuit current density ($J_{sc}$, $14.60\;mA/cm^2$) and open-circuit voltage ($V_{oc}$, 0.68 V) of these DSSCs led to a high power conversion efficiency (PCE) of 6.42% and a fill factor of 0.65 under a standard light intensity of $100\;mW/cm^2$ irradiation of AM 1.5 sunlight. A DSSC fabricated by using E7-embedded PVdF-co-HFP-based polymer electrolyte exhibited a maximum incident photon-to-current conversion efficiency (IPCE) of 50%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.14-14
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• 2003

Silicon carbide (SiC)는 높은 power 영역과 높은 온도영역에서도 작동 가능한 우수한 반도체 물질이다. 또한 우수한 열적 화학적, 안정성을 가지고 있어 가흑한 조건에서의 소자로써도 사용 가능하다. 현재 SiC 적용분야로는 우수한 전기적, 기계적 성질을 이용한 미세소자(MEMS)와 GaN 와 거의 유사한 격자상수를 가지는 것을 이용한 GaN epitaxial 성장의 기판으로도 사용되어진다. 그러나 SiC 는 기존의 습식식각 용매에 대해 화학적 안정성을 가지고 있기 때문에 전자소자의 제작에 있어서 플라즈마를 이용한 건식식각의 중요성이 대두되어지고 있다. 소자제작에 있어 이러한 건식식각시 식각 단면의 제어, 이온에 의한 낮은 손상 정도, 매끄러운 식각 표면, 그리고 고속의 식각 속도둥이 요구되어진다. 본 실험에서는 식각 속도의 증가와 수직한 식각 단면둥을 획득하기 위하여 SF6 플라즈마에서 Source power, dc bias voltage, 그리고 외부에서 인가되는 자속의 세기를 변화시쳐가며 식각 속도, 식각 마스크와의 식각 션택비, 식각 단면둥과 같은 SiC 의 식각 특성을 관찰하였다. 식각 후 식각 단면은 주사전자 현미경(SEM)을 통해 관찰하였다. 본 실험에서의 가장 높은 식각 속도는 분당 1850n 로써 이때의 공정조건은 1400W 의 inductive power, -600V 의 dc bias voltage, 20G 의 외부자속 세기이었다. 또한, 높은 inductive power 조건과 낮은 dc bias voltage 조건에서 Cu는 $SF_6$ 플라즈마 내에서 식각부산물의 증착으로 인해 SiC 와 무한대의 식각선택비를 보였다. 이러한 Cu 마스크를 사용한 SiC 의 식각에서는 식각 후 수직한 식각 단변을 관찰할 수 있었다. 것올 알 수 있다. 따라서, 기존의 pve 보다 세라믹 기판의 경우가 수분 흡수율이 높아 더 오랫동안 전류를 흐르게 하여 방식성이 개선된 것으로 판단된다.을 통해 경도가 증가한 시편의 경우 석출상의 크기가 5nm 이하로 매우 작고 대체로 기지와 연속적인 계면을 형성하나, 열처리가 진행될수록 석 출상의 크기가 커지고 임계크기 이상에 이르면 연속적인 계면은 거의 발견되지 않고, 대부 분 불연속적이고 확연한 계면을 형성함을 관찰 할 수 있었다. 알루미나(${\alpha}-Al_2O_3$) 기판 위에 증착한 $(Ti_{1-x}AI_{x})N$ 피막은 마찬가지로 (200) 우선 방위를 나타내었으나, 그 입자의 크기가 수십 nm로 고속도강위에 증착한 피막에 비해 상당히 크게 형성되었다. 또한 열처리 후에 AIN의 석출이 진행됨에도 불구하고 경도 증가는 나타나지 않고, 열처리가 진행됨에 따라 경도가 감소하는 양상만을 나타내었다. 결국 $(Ti_{1-x}AI_{x})N$ 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다. 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로 $\ulcorner$순응$\lrcorner$의 범위를 벗어나지 않는다. 그렇기 때문에

• Electrical & Electronic Materials
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• v.12 no.7
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• Economic and Environmental Geology
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• v.50 no.3
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• pp.215-224
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• 2017

Arsenic (As) is known to be the most toxic element and frequently detected in groundwater environment. Inorganic As exists as arsenite [As(III)] and arsenate [As(V)] in reduced and oxidized environments, respectively. It has been reported that the toxicity of arsenite is much higher than that of arsenate and furthermore arsenite shows relatively higher mobility in aqueous environments. For this reason, there have been numerous researches on the process for oxidation of arsenite to arsenate to reduce the toxicity of arsenic. In particular, photooxidation has been considered to be simple, economical, and efficient to attain such goal. This study was conducted to evaluate the applicability of naturally-occurring goethite as a photocatalyst to substitute for $TiO_2$ which has been mostly used in the photooxidation processes so far. In addition, the effects of several factors on the overall performance of arsenite photocatalytic oxidation process were evaluated. The results show that the efficiency of the process was affected by total concentration of dissolved cations rather than by the kind of those cations and also the relatively higher pH conditions seemed to be more favorable to the process. In the case of coexistence of arsenite and arsenate, the removal tendency by adsorption onto goethite appeared to be different between arsenite and arsenate due to their different affinities with goethite, but any effect on the photocatalytic oxidation of arsenite was not observed. In terms of effect of humic acid on the process, it is likely that the higher concentration of humic acid reduced the overall performance of the arsenite photocatalytic oxidation as a result of competing interaction of activated oxygen species, such as hydroxyl and superoxide radicals, with arsenite and humic acid. In addition, it is revealed that the injection of oxygen gas improved the process because oxygen contributes to arsenite oxidation as an electron acceptor. Based on the results of the study, consequently, the photocatalytic oxidation of aqueous arsenite using goethite seems to be greatly feasible with the optimization of process.

• Economic and Environmental Geology
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• v.22 no.1
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• pp.35-63
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• 1989

Geochemical characteristics of the Guryongsan (Ogcheon) uraniferous black slate show that this is an analogue to the conventional Chattanooga and Alum shales in occurrences. Whereas, its highest enrichment ratio in metals including uranium, among others, is explained by the cyclic sedimentation of the black muds and quartz-rich silts, and the uniform depositional condition with some what higher pH condition compared to the conditions of the known occurrences. The cyclic sedimentation, caused by the periodic open and close of the silled basin, has brought about the flush-out) of the uranium depleted water and the recharge with the new metal-rich sea water, which consequently contributed to the high concentration of metals in mud. The metal-rich marine black muds, which mostly occur in the early to middle Palaeozoic times, is attributed by the geologic conditions which related to the atmospheric oxygen contents, and these are scarcely met in the late Precambrian and/or with the onset of Palaeozoic era in the geologic evolution of the earth.