• Applied Chemistry for Engineering
• /
• v.32 no.6
• /
• pp.599-606
• /
• 2021

In this study, an experiment and a reaction characteristic study were conducted to enhance the reaction activity of V₂O₅/WO₃/TiO₂ at 300 ℃ or less by adding selenium to the support, in a selective catalytic reduction method using ammonia as a reducing agent to remove nitrogen oxides. Se-TiO₂ and TiO₂ were synthesized using the sol-gel method, and used as a support when preparing V₂O₅/WO₃/TiO₂ and V₂O₅/WO₃/Se-TiO₂ catalysts. The reaction activity of our catalyst was compared with that of a commercial catalyst. The denitration efficiency of the catalyst using TiO₂ prepared by the sol-gel method was lower than that of the catalyst prepared using commercial TiO₂, but was improved by the addition of selenium. Thus, the effect of selenium addition on the catalyst structure was analyzed using BET, XRD, Raman, H₂-TPR, and FT-IR measurements and the effect of the increase in specific surface area by selenium addition and the formation of monomer and complex vanadium species on reaction characteristics were confirmed.

• Korean Journal of Mineralogy and Petrology
• /
• v.33 no.3
• /
• pp.195-214
• /
• 2020

The Samgwang Au-Ag deposit has been one of the largest deposits in Korea. The deposit consists of eight lens-shaped quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock, which feature suggest that it is an orogenic-type deposit. The Ti-bearing minerals occur in wallrock (titanite, ilmenite and rutile) and laminated quartz vein (rutile). They occur minerals including biotite, muscovite, chlorite, white mica, monazite, zircon, apatite in wallrock and white mica, chlorite, arsenopyrite in laminated quartz vein. Chemical composition of titanite has maximum vaules of 3.94 wt.% (Al₂O₃), 0.49 wt.% (FeO), 0.52 wt.% (Nb₂O₅), 0.46 wt.% (Y₂O₃) and 0.43 wt.% (V₂O₅). Titanite with 0.06~0.14 (Fe/Al ratio) and 0.06~0.15 (X_Al (=Al/Al+Fe³⁺+Ti)) corresponds with metamorphic origin and low-Al variety. Chemical composition of ilmenite has maximum values of 0.07 wt.% (ZrO₂), 0.12 wt.% (HfO₂), 0.26 wt.% (Nb₂O₅), 0.04 wt.% (Sb₂O₅), 0.13 wt.% (Ta₂O₅), 2.62 wt.% (As₂O₅), 0.29 wt.% (V₂O₅), 0.12 wt.% (Al₂O₃) and 1.59 wt.% (ZnO). Chemical composition of rutile in wallrock and laminated quartz vein has maximum values of 0.35 wt.%, 0.65 wt.% (HfO₂), 2.52 wt.%, 0.19 wt.% (WO₃), 1.28 wt.%, 1.71 wt.% (Nb₂O₃), 0.03 wt.%, 0.07 wt.% (Sb₂O₃), 0.28 wt.%, 0.21 wt.% (As₂O₅), 0.68 wt.%, 0.70 wt.% (V₂O₃), 0.48 wt.%, 0.59 wt.% (Cr₂O₃), 0.70 wt.%, 1.90 wt.% (Al₂O₃) and 4.76 wt.%, 3.17 wt.% (FeO), respectively. Rutile in laminated quartz vein is higher contents (HfO₂, Nb₂O₃, As₂O₅, Cr₂O₃, Al₂O₃ and FeO) and lower content (WO₃) than rutile in wallrock. The substitutions of rutile in wallrock and laminated quatz vein are as followed : rutile in wallrock [(Fe³⁺, Al³⁺, Cr³⁺) + Hf⁴⁺ + (W⁵⁺, As⁵⁺, Nb⁵⁺) ⟵⟶ 2Ti⁴⁺ + V⁴⁺, 2Fe²⁺ + (Al³⁺, Cr³⁺) + Hf⁴⁺ + (W⁵⁺, As⁵⁺, Nb⁵⁺) ⟵⟶ 2Ti⁴⁺ + 2V⁴⁺], rutile in laminated quartz vein [(Fe³⁺, Al³⁺) + As⁵⁺ ⟵⟶ Ti⁴⁺ + V⁴⁺, (Fe³⁺, Al³⁺) + As⁵⁺ ⟵⟶ Ti⁴⁺ + Hf⁴⁺, 4(Fe³⁺, Al³⁺) ⟵⟶ Ti⁴⁺ + (W⁵⁺, Nb⁵⁺) + Cr³⁺], respectively. Based on these data, titanite, ilmenite and rutile in wallrock were formed by resolution and reconcentration of cations (W⁵⁺, Nb⁵⁺, As⁵⁺, Hf⁴⁺, V⁴⁺, Cr³⁺, Al³⁺, Fe³⁺, Fe²⁺) in minerals of wallrock during regional metamorphism. And then rutile in laminated quartz vein was formed by reconcentration of cations (Nb⁵⁺, As⁵⁺, Hf⁴⁺, Cr³⁺, Al³⁺, Fe³⁺, Fe²⁺) in alteration minerals (white mica, chlorite) and Ti-bearing minerals reaction between hydrothermal fluid originated during ductile shear and Ti-bearing minerals (titanite, ilmenite and rutile) in wallrock.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.1
• /
• pp.7-11
• /
• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1248-1249
• /
• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were 38.11, with a dielectric loss of 0.134, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were about -3.15%/K.

• Journal of the Korean Chemical Society
• /
• v.16 no.3
• /
• pp.157-165
• /
• 1972

Thermal decomposition of ammonium metavanadate has been investigated by using the quartz spring balance and differential thermal analysis. It showed that the decomposition of ammonium metavanadate is proceeded at two stages which correspond to $180^{\circ}C-220^{\circ}C$ and $310^{\circ}C-330^{\circ}C$ decomposition temperatures, respectively. Evolved ammonia gas in thermal decomposition has been analyzed quantitatively by titration. And the constituents of gases evolved have been evaluated by gas chromatography and omegatron spectrometer. From these results, it was concluded that the gases evolved in the first step decomposition were $NH_3$ and $H_2O$ with 2:1 ratio and the second step decomposition corresponded to the formation of $NH_3$, $H_2O$ and $N_2O$ which was produced in oxidation of $NH_3$ by $V_2O_5$. The decomposition products were identified by means of X-ray diffraction method. The decomposition product in air was V_2O_5 and the product in vacuum $V_3O_7.$ The kinetics of the thermal decomposition was studied, giving the values of the activation energy of 41.4 kcal/mole and 64.4 (kcal/mole) respectively.

• Environmental Engineering Research
• /
• v.10 no.1
• /
• pp.31-37
• /
• 2005

The selective catalytic experiments using both sulfated/sulfur-free titania and V2O5/TiO2 catalysts have been conducted for NO reduction by NH3 in a packed-bed, down-flow reactor. The sulfated and vanadia loaded titania exhibited higher activity for NO removal than the sulfur-free catalysts, where > 90% NO removal was achieved over the sulfated V2O5/TiO2 catalyst between 280∼500 C. The surface structure of vanadia species on the catalyst surface played a critical role in the high performance of catalysts in which the existence of monomeric/polymeric vanadate is revealed by Raman spectra studies. Water vapor and SO2 were added to the reacting system for the catalyst deactivation tests. At higher temperatures (T ≥ 350 C), little deactivation was observed over the sulfated V2O5/TiO2 catalysts, showing good durability against SO2 and water vapor, which is compared with deactivation at lower temperatures.

• Journal of the Korean Chemical Society
• /
• v.38 no.8
• /
• pp.616-619
• /
• 1994

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1485-1487
• /
• 2002

The 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(5wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the 0.96Mg$TiO_3$-0.04Sr$TiO_3$ceramics with $V_2O_5$(5wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature, the grain size was increased and three types of grains were exhibited: larger circular grain, small square grain and lapth-shaped grain. In the case of 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $15.24{\sim}18.55$, $22,890{\sim}42,100$GHz, -24.5${\sim}$+2.414ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.237-238
• /
• 2008

The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.

• Journal of the Korean Chemical Society
• /
• v.55 no.1
• /
• pp.81-85
• /
• 2011

$V_{0.9}Sb_{0.1}O_x$ systems, bulk and deposited on different supports (five types of $\gamma$-aluminas, $\alpha$-alumina, silica-alumina, silica gel, magnesium oxide), have been tested in the oxidative dehydrogenation (ODH) of iso-butane. Catalytic performance of VSb oxides has shown to be highly dependent on the support and the nature of the support decreasing in a series: $\gamma$-$Al_2O_3$ > $\alpha$-$Al_2O_3$ > Si-Al-O > $SiO_2$ $\approx$ MgO $\gg$ unsupported. Variation of the V-Sb-O-loading in the studied range of coverage (0.5-2 theoretical monolayer) only slightly influences the catalysts' activity and selectivity. The best catalytic performance of $\gamma$-alumina-supported $V_{0.9}Sb_{0.1}O_x$ systems can be explained by the optimal surface interaction between support and supported components resulting in the formation of well-spread amorphous active $VO_x$-component with vanadium in a high oxidation state.