• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.596-596
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• 2012

모듈 상태에서의 태양전지 효율에 영향을 주는 외부 요인으로는 풍력과 눈 등의 하중으로 인한 물리적 스트레스와 자외선을 포함하는 광범위한 파장 대역의 빛의 영향 등이 있다. 따라서 본 연구에서는 태양전지의 야외 노출 시간에 따른 소자의 특성 및 효율 변화를 분석하고자 효율이 17.14%인 결정질 태양전지를 18시간 야외에서 노출 시켜 6시간 간격으로 전기적 특성을 분석해 태양전지의 여러 파라미터 변화를 분석하고자 한다. 본 실험에서는 태양전지의 외부 노출에 의한 소자 특성 및 파미미터 변화를 확인하고자 일정 시간 간격으로 노출 된 solar cell에 대한 Dark I-V, Light I-V 측정을 하였다. DIV 측정을 통해 노출 시간이 증가할수록 동일전압 대비 current가 증가하는 것을 알 수 있었다. 또한 역방향 전압에서는 누설전류가 증가함을 확인하였다. Turn-on 전압 감소와 누설전류 증가, 직렬저항의 변화로 인한 소자의 파라미터 변화를 확인하기 위한 LIV 측정에서는 노출 시간 증가에 따라 단락전류 $0.177(mA/cm^2)$, 개방전압 2.699 (mV), 곡선인자 0.5%가 감소하였으며, 소자의 효율도 0.27% 감소하였다. 이처럼 태양전지의 외부 노출은 소자의 파라미터를 감소시키고 최종적으로 소자의 효율을 저해하는 원인이 됨을 확인하였다.

• Journal of the Korea Society of Computer and Information
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• v.10 no.1 s.33
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• pp.1-6
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• 2005

White light emission is very important for applying electroluminescent device to full display, backlight and illumination light source. In this letter, Multilayer molecular organic white-light-emitting device using thin nim of blue material nitro-DPVT with fluorescent dye Rubrene for an orange emission were fabricated. The basic structure of the fabricated device is a-NPD / nitro-DPVT / nitro- DPVT:Rubrene / BCP/ Alq3. Aluminum is used as the cathode material and ITO was anode material. The white light emission spectrum covers a wide range of the visible region and the Commission Internationale do I'E clairage (C.I.E.) coordinates of the emitted light was ((0.3347, 0.3515) at 14V. The turn voltage is as low as 2.5V and quantum efficiencies are $0.35\%$.

• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.875-880
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• 2018

This paper proposes a novel combined compensation structure in the infrared receiver chip. For the infrared communication chip, the current-voltage (I-V) convert circuit is crucial and important. The circuit is composed by the transimpedance amplifier (TIA) and the combined compensation structures. The TIA converts the incited photons into photocurrent. In order to amplify the photocurrent and avoid the saturation, the TIA uses the combined compensation circuit. This novel compensation structure has the low frequency compensation and high frequency compensation circuit. The low frequency compensation circuit rejects the low frequency photocurrent in the ambient light preventing the saturation. The high frequency compensation circuit raises the high frequency input impedance preserving the sensitivity to the signal of interest. This circuit was implemented in a $0.6{\mu}m$ BiCMOS process. Simulation of the proposed circuit is carried out in the Cadence software, with the 3V power supply, it achieves a low frequency photocurrent rejection and the gain keeps 109dB ranging from 10nA to $300{\mu}A$. The test result fits the simulation and all the results exploit the validity of the circuit.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.111-114
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• 2005

Organic monolayers were fabricated onto Au(l l l) substrate by self-assembly method using dipyridinium. Also, organic single molecule in the organic monolayers was selected to measure the current-voltage (I-V) curves by using the ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The organic molecule used in the experiment was dipyridinium dithioacetate, which contains thiol functional group and can be self-assembled easily onto Au(l l l) substrate. The concentration of dipyridinium dithioacetate for self-assembly procedure was I [mM/L]. To confirm the formation of self-assembled mono layers (SAMs), the differences of thickness of the self-assembled organic monolayers were observed by using an ellipsometer, and the morphology and I-V curves of the SAMs were investigated by using UHV-STM. The applied voltages were from -2 [V] to +2 [V], temperature was 300 [K]. The vacuum for measuring current of the organic single molecule was 6 $\times$ 10$^{-8}$ [Torr]. As a result, properties of the negative differential resistance (NDR) in constant voltage were found.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.1-5
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• 2011

In this paper, we investigated the characteristics of AlGaN/GaN HEMTs to optimize their DC and RF characteristics by using a two-dimensional device simulator. First, we analyzed the variation of the DC characteristics with respect to the variation of 2DEG concentrations when varying the Al mole fraction and the thickness of the AlGaN layer. Then, we examined the variation of the RF characteristics by varying the size and the location of the gate, source and drain electrodes. When the Al mole fraction increased from 0.2 to 0.45, both the transconductance and I-V characteristics increased. On the other hand, the I-V characteristics were improved but transconductance was decreased as the thickness of the AlGaN layer increased from 10nm to 50nm. In the RF characteristics, the gate length was found to be the most influential parameter, and the RF characteristics were improved when the gate length was shorten.

• The Korean Journal of Air & Space Law and Policy
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• v.16
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• pp.160-196
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• 2002

In this thesis. I have first introduced and studied Chubb & Son. Inc. v. Asiana Airlines. 214 F.3d 301 (2nd Cir. 2000). which held that at the time that the dispute in this case arose. there was no treaty relationship between the United States and South Korea under the Original Warsaw convention. the Hague Protocol. or a treaty consisting of those provisions of the Original Convention that were not amended by the Protocol. And I have analyzed U.S. government s position that was expressed in Brief for the United States as Amicus Curiae on petition for a writ certiorari to the 2nd Circuit on Chubb & Son case and 2nd Circuit s Fujitsu Limited v. Federal Express Corporation. 247 F.3d 423 (2001) which was held in a related question afterwards but was somewhat inconsistent with Chubb & Son s holding. Furthermore. I also examined U.S. government s measures which have been considered and taken to cope with consequences of Chubb & Son case's ruling. Lastly. I have examined several effects which Chubb & Son s ruling would give our nation s airlines and suggested our government's countermeasures.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.7
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• pp.16-19
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• 2019

A thinner film has superior electrical properties and a better amorphous structure. Amorphous structures can be effective in improving conductivity through a depletion effect. Research is needed on the Schottky contact, where potential barriers are formed, as a way to identify these characteristics. $SiO_2/SnO_2$ thin films were prepared to examine the amorphous structure and Schottky contact, $SiO_2$ thin films were prepared using Ar = 20 sccm. $SnO_2$ thin films were deposited using mixed gas with a flow rate of argon and oxygen at 20 sccm, and $SnO_2$ thin films were added by magnetron sputtering and treated at $100^{\circ}C$ and $150^{\circ}C$. To identify the conditions under which the amorphous structure was constructed, the XRD patterns were investigated and C-V and I-V measurements were taken to make Al electrodes and perform electrical analysis. The depletion layer was formed by the recombination of electrons and holes through the heat treatment process. $SiO_2/SnO_2$ thin films confirmed that the pores were well formed when heat treated at $100^{\circ}C$ and an electric current was applied over the micro area. An amorphous $SiO_2/SnO_2$ thin film with heat treatment at $100^{\circ}C$ showed no reflection at $33^{\circ}\;2{\theta}$ in the XRD pattern, and a reflection at $44^{\circ}2\;{\theta}$. The macroscopic view (-30 V

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1065-1070
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• 2003

Controlling synthesis conditions of ZnS:Cu,Al and ZnS:Cu electroluminescent phosphors we optimized particle size, color properties and efficiency. Surface properties were studied by new method and showed correlation with luminescence as shown by the analysis of EL spectra with Fok-Alentsev method. Luminance and maintenance improvement was achieved by the electron-beam annealing due to additional decomposition of $ZnS-Cu_{2}S$ solid solution and formation of centers of blue luminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.14-15
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• 2007

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.34 no.1
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• pp.36-48
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• 2008

To repair bone defects in the oral and maxillofacial field, bone grafts including autografts, allografts, and artificial bone are used in clinical dentistry despite several disadvantages. The purpose of this study was to evaluate new bone formation and healing in rat calvarial bone defects using hydroxyapatite (HA, $Ca_{10}[PO_4]_6[OH]_2,\;Bongros^{(R)}$, Bio@ Co., KOREA) and tricalcium phosphate (${\beta}-TCP,\;Ca_3[PO_4]_2$, Sigma-Aldrich Co., USA) mixed at various ratios. Additionally, this study evaluated the effects of type I collagen (Rat tail, BD Biosciences Co., Sweden) as a basement membrane organic matrix. A total of twenty, 8-week-old, male Sprague-Dawley rats, weighing 250-300g, were divided equally into a control group (n=2) and nine experimental groups (n=2, each). Bilateral, standardized transosseous circular calvarial defects, 5.0 mm in diameter, were created. In each experimental group, the defect was filled with HA and TCP at a ratio of 100:0, 80:20, 70:30, 60:40, 50:50, 40:60, 30:70, 20:80, and 0:100 with or without type I collagen. Rats were sacrificed 4 and 8 weeks post-operation for radiographic (standardized plain film, Kodak Co., USA), histomorphologic (H&E [Hematoxylin and Eosin], MT [Masson Trichrome]), immunohistochemical staining (for BMP-2, -4, VEGF, and vWF), and elementary analysis (Atomic absorption spectrophotometer, Perkin Elmer AAnalyst $100^{(R)}$). As the HA proportion increased, denser radiopacity was seen in most groups at 4 and 8 weeks. In general radiopacity in type I collagen groups was greater than the non-collagen groups, especially in the 100% HA group at 8 weeks. No new bone formation was seen in calvarial defects in any group at 4 weeks. Bridging bone formation from the defect margin was marked at 8 weeks in most type I collagen groups. Although immunohistochemical findings with BMP-2, -4, and VEGF were not significantly different, marked vWF immunoreactivity was present. vWF staining was especially strong in endothelial cells in newly formed bone margins in the 100:0, 80:20, and 70:30 ratio type I collagen groups at 8 weeks. The calcium compositions from the elementary analysis were not statistically significant. Many types of artificial bone have been used as bone graft materials, but most of them can only be applied as an inorganic material. This study confirmed improved bony regeneration by adding organic type I collagen to inorganic HA and TCP mixtures. Therefore, these new artificial bone graft materials, which are under strict storage and distribution systems, will be suggested to be available to clinical dentistry demands.