• Title/Summary/Keyword: $U_3Si$

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Photoaddition Reactions of N-Methylthiophthalimide with $\alpha$-Silyl-n-electron Donors via Single Electron Transfer-Desilylation and Hydrogen Atom Abstraction Pathways

  • Yoon, Ung-Chan;Oh, Sun-Wha;Moon, Seong-Chul;Hyung, Tae-Gyung
    • Journal of Photoscience
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    • v.9 no.1
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    • pp.17-22
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    • 2002
  • Studies have been conducted to explore photoaddition reactions of N-methylthiophthalimide with $\alpha$-silyl-n-electron donors Et$_2$NCH$_2$SiMe$_3$, n-PrSCH$_2$SiMe$_3$ and EtOCH$_2$SiMe$_3$. Photoaddition of $\alpha$-silyl amine Et$_2$NCH$_2$SiMe$_3$ to N-methylthiophthalimide occurs in $CH_3$CN and benzene to produce non-silicon containing adduct in which thiophthalimide thione carbon is bonded to $\alpha$-carbon of $\alpha$-silyl amine in place of the trimethylsilyl group. In contrast, photoaddition of EtOCH$_2$SiMe$_3$ to N-methylthiophthalimide generates two diastereomeric adducts in which thiophthalimide thione carbon is connected to $\alpha$-carbon of $\alpha$-silyl ether in place of u-hydrogen. Based on a consideration of the oxidation potentials of u-silyl-n-electron donors and the nature of photoadducts, mechanism for these photoadditions involving single electron transfer(SET) -desilylation and H atom abstraction pathways are proposed.

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Photoluminance Properties of $Al_3GdB_4O_{12}$ Phosphors Activated by $Tb^{3+}$and $Eu^{3+}$ ($Tb^{3+}$$Eu^{3+}$로 활성화된 $Al_3GdB_4O_{12}$ 형광체의 발광특성)

  • 김기운;김성우;이임렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.594-597
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    • 1999
  • The new green and red phosphors for PDP application activated by T $b^{3+}$ and E $u^{3+}$ were synthesized, and their photoluminance properties were investigated. It was found that the brightness of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ green phosphor under 147nm VUV irradiation was higher than that of commercial Z $n_2$ $SiO_4$:M $n^{2+}$ phosphor. But the emitting intensity of A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ red phosphor was inferior to the commercial (Y,Gd)B $O_3$:E $u^{3+}$. $Al_3$Gd $B_4$ $O_{12}$ Phosphor had a strong excitation band at 160nm associated with the host absorption, and also the photoluminance excitation intensity of $Al_3$Gd $B_4$ $O_{12}$ :T $b^{3+}$ was higher than that of Z $n_2$ $SiO_4$:M $n^{2+}$, but the intensity of $Al_3$Gd $B_4$ $O_{12}$ :E $u^{3+}$ phosphor was smaller than (Y,Gd)B $O_3$:E $u^{3+}$ phosphor In the VUV range. C $e^{3+}$ co-doping in A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ and substitution of $Al^{3+}$ by G $a^{3+}$ A1$_3$Gd $B_4$ $O^{12}$ :E $u^{3+}$ phosphor were tried, but they did not improved the optical property .d the optical property .ty .

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Fabrication of $\textrm{MoSi}_2$ Heating Elements (이규화몰리브덴 고온발열체의 제조에 관한 연구)

  • Kim, Won-Baek;Sim, Geon-Ju;Jang, Dae-Gyu;Seo, Chang-Yeol
    • Korean Journal of Materials Research
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    • v.7 no.9
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    • pp.763-771
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    • 1997
  • 이규화몰리브덴 고온발열체의 제조공정을 개발하였다. 원료분말은 상용 MoSi$_{2}$분말이었으며 Bentonite, Si$_{3}$N$_{4}$, B, ThO$_{2}$를 각각 가소제와 첨가제로 사용하였다. 이들은 진공압출, 소결, 단자부 기계가공, U자형 성형, 용접 등의 과정을 거쳐 U자형 발열체로 제조되었다. 사용제품의 분석결과 최근 사용온도가 크게 증가된 것으로 알려진 190$0^{\circ}C$용 발열체는 다량(33wt%)의 W이 Mo을 치환하고 있는 것으로 나타났다. 발열체의 전기비저항은 겉보기 밀도가 증가함에 따라 급격하게 감소하는 경향을 보였으며 첨가물들의 영향은 미미하였다. 1400-1$600^{\circ}C$에서 용접한 경우 용접면에서의 전기비저항은 비용접부보다 낮았으며 용접온도가 증사함에 따라 감소하였다. 발열시험결과 제조된 발열체는 표면온도가 1$700^{\circ}C$이하에서는 문제가 없었으며 175$0^{\circ}C$ 이상의 온도에서는 원형의 융기가 표면에 발생하면서 급속하게 파괴되었다. 이 융기는 X-선 회절분석결과 SiO로 밝혀졌으며 따라서 발열체의 파괴는 MoSi$_{2}$/SiO$_{2}$계면에서의 Si(in MoSi$_{2}$) + SiO$_{2}$=2SiO(g)반응에 으해 일어나는 것으로 판단된다.

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Magnetization Switching of MTJs with CoFeSiB/Ru/CoFeSiB Free Layers (CoFeSiB/Ru/CoFeSiB 자유층을 갖는 자기터널 접합의 스위칭 자기장)

  • Lee, S.Y.;Lee, S.W.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
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    • v.17 no.3
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    • pp.124-127
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    • 2007
  • Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

Luminescence Characteristics of Y2-xGdxO3:Eu3+ Thin film Grown by Pulsed Laser Ablation (PLD 방법으로 Si(100) 기판위에 증착한 Y2-xGdxO3:Eu3+/ 박막의 형광특성)

  • 이성수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.112-117
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    • 2004
  • $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$(x=0.0, 0.3, 0.6, 1.0, 1.4) luminescent thin films have been grown on Si (100) substrates using pulsed laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, the surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ films grown under optimized conditions have indicated that Si (100) is one of promised substrates for the growth of high quality $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ thin film red phosphor. In particular, the incorporation of Gd into $Y_2$ $O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with $Y_{1.35}$G $d_{0.60}$ $O_3$: $E^{3+}$, whose brightness was increased by a factor of 1.95 in comparison with that of $Y_2$ $O_3$:E $u^{3+}$ films.3+/ films.films.lms.

Measurement of Terminal Velocity for Scatter Prevention of Powder in the Voloxidizer for Oxidation of UO$_{2}$ Pellet (UO$_{2}$ 펠릿 산화로의 분말 비산 방지를 위한 최종속도 측정)

  • Kim Young-Hwan;Yoon Ji-Sup;Jung Jae-Hoo;Jin Jae-Hyun;Hong Dong-Hee
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.3 no.2
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    • pp.77-84
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    • 2005
  • A voloxidizer for a hot cell demonstration, that handles spent fuels of a high radiation level in a limited space should be small and spent fuel powders should not be dispersed out of the equipment involved. In this study a density rate equation as well as the Stokes'equation has been proposed in order to obtain the theoretical terminal velocity of powders. The terminal velocity of U$_{3}$O$_{8}$ has been predicted by using the terminal velocity of SiO$_{2}$, and then determination has been the optimum air flow rate which is able to prevent powders from scattering. An equation which has shown a relationship between theoretical terminal velocities of U$_{3}$O$_{8}$ and SiO$_{2}$ has been derived with the help of the Stokes'equation, and then an experimental verification made for the theoretical Stokes' equation of SiO$_{2}$ by means of an experimental device made of acryl. The theoretical terminal velocity based on the proposed density rate equation has been verified by detecting U$_{3}$O$_{8}$ powders in a filter installed in the mock-up voloxidizer. As the results, the optimum air flow rates seem to be 20 LPM by the Stokes'equation while they are 14.5 L/min by the density rate equation. At the experiments with the mock-up voloxidizer, a trace amount of U$_{3}$O$_{8}$ seems to be detectable at the air flow rate of 14.5 L/min by the density rate equation, but U$_{3}$O$_{8}$ powders of 7$\mu$m diameter seem detectable at the air flow rate of 20 L/min by the Stokes'equation. It is revealed that 14.5 L/min is the optimum air flowe rate which is capable of preventing U$_{3}$O$_{8}$ powders from scattering in the UO$_{2}$ voloxidizer and the proposed density rate equation is proper to calculate the terminal velocity of U$_{3}$O$_{8}$ powders.

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Application of Laser Ablation Inductively Coupled Plasma Mass Spectrometry for Characterization of U-7Mo/Al-5Si Dispersion Fuels

  • Lee, Jeongmook;Park, Jai Il;Youn, Young-Sang;Ha, Yeong-Keong;Kim, Jong-Yun
    • Nuclear Engineering and Technology
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    • v.49 no.3
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    • pp.645-650
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    • 2017
  • This technical note demonstrates the feasibility of using laser ablation inductively coupled plasma mass spectrometry for the characterization of U-7Mo/Ale5Si dispersion fuel. Our measurements show 5.0% Relative Standard Deviation (RSD) for the reproducibility of measured $^{98}Mo/^{238}U$ ratios in fuel particles from spot analysis, and 3.4% RSD for $^{98}Mo/^{238}U$ ratios in a NIST-SRM 612 glass standard. Line scanning allows for the distinction of U-7Mo fuel particles from the Al-5Si matrix. Each mass spectrum peak indicates the presence of U-7Mo fuel particles, and the time width of each peak corresponds to the size of that fuel particle. The size of the fuel particles is estimated from the time width of the mass spectrum peak for $^{98}Mo$ by considering the scan rate used during the line scan. This preliminary application clearly demonstrates that laser ablation inductively coupled plasma mass spectrometry can directly identify isotope ratios and sizes of the fuel particles in U-Mo/Al dispersion fuel. Once optimized further, this instrument will be a powerful tool for investigating irradiated dispersion fuels in terms of fission product distributions in fuel matrices, and the changes in fuel particle size or shape after irradiation.

COMPACT TOEPLITZ OPERATORS

  • Kang, Si Ho
    • Honam Mathematical Journal
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    • v.35 no.3
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    • pp.343-350
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    • 2013
  • In this paper we prove that if Toeplitz operators $T^{\alpha}_u$ with symbols in RW satisfy ${\parallel}uk^{\alpha}_z{\parallel}_{s,{\alpha}{\rightarrow}0$ as $z{\rightarrow}{\partial}\mathbb{D}$ then $T^{\alpha}_u$ is compact and also prove that if $T^{\alpha}_u$ is compact then the Berezin transform of $T^{\alpha}_u$ equals to zero on ${\partial}\mathbb{D}$.