• Title/Summary/Keyword: $Ti_3SiC_2$

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Lead-free inorganic metal perovskites beyond photovoltaics: Photon, charged particles and neutron shielding applications

  • Srilakshmi Prabhu;Dhanya Y. Bharadwaj;S.G. Bubbly;S.B. Gudennavar
    • Nuclear Engineering and Technology
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    • v.55 no.3
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    • pp.1061-1070
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    • 2023
  • Over the last few years, lead-free inorganic metal perovskites have gained impressive ground in empowering satellites in space exploration owing to their material stability and performance evolution under extreme space environments. The present work has examined the versatility of eight such perovskites as space radiation shielding materials by computing their photon, charged particles and neutron interaction parameters. Photon interaction parameters were calculated for a wide energy range using PAGEX software. The ranges of heavy charged particles (H, He, C, N, O, Ne, Mg, Si and Fe ions) in these perovskites were estimated using SRIM software in the energy range 1 keV-10 GeV, and that of electrons was computed using ESTAR NIST software in the energy range 0.01 MeV-1 GeV. Further, the macroscopic fast neutron removal cross-sections were also calculated to estimate the neutron shielding efficiencies. The examined shielding parameters of the perovskites varied depending on the radiation type and energy. Among the selected perovskites, Cs2TiI6 and Ba2AgIO6 displayed superior photon attenuation properties. A 3.5 cm thick Ba2AgIO6-based shield could reduce the incident radiation intensity to half its initial value, a thickness even lesser than that of Pb-glass. Besides, CsSnBr3 and La0.8Ca0.2Ni0.5Ti0.5O3 displayed the highest and lowest range values, respectively, for all heavy charged particles. Ba2AgIO6 showed electron stopping power (on par with Kovar) better than that of other examined materials. Interestingly, La0.8Ca0.2Ni0.5Ti0.5O3 demonstrated neutron removal cross-section values greater than that of standard neutron shielding materials - aluminium and polyethylene. On the whole, the present study not only demonstrates the employment prospects of eco-friendly perovskites for shielding space radiations but also suggests future prospects for research in this direction.

Effect of Post-Annealing and ZTO Thickness of ZTO/GZO Thin Film for Dye-Sensitized Solar Cell

  • Song, Sang-U;Lee, Gyeong-Ju;No, Ji-Hyeong;Park, On-Jeon;Kim, Hwan-Seon;Ji, Min-U;Mun, Byeong-Mu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.405-406
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    • 2013
  • Ga-doped ZnO (GZO)는 $300^{\circ}C$ 이상의 온도에서는 전기적으로 불안정하기 때문에 CIGS, CdTe, DSC와 같은 태양전지의 높은 공정온도 때문에 사용이 제한적이다. ZTO thin film은 Al2O3, SiO2, TiO2, ZnO tihin film과 비교하여 산소 및 수분에 대하여 투과성이 상대적으로 낮은 것으로 알려져 있다. 따라서 GZO single layer에 비하여 ZTO-GZO multi-layer를 구성하여 TCO를 제작하면, 높은 공정온도에서도 사용 가능하다. 실제 제작된 GZO single layer (300 nm)에서 비저항이 $7.69{\times}10^{-4}{\Omega}{\cdot}cm$에서 $500^{\circ}C$에서 열처리 후 $7.76{\times}10^{-2}{\Omega}{\cdot}cm$으로 급격하게 상승한다. ZTO single layer (420 nm)는 as-grown에서는 측정 불가했지만, $400^{\circ}C$에서 열처리 후 $3.52{\times}10^{-1}{\Omega}{\cdot}cm$ $500^{\circ}C$에서 열처리 후 $4.10{\times}10^{-1}{\Omega}{\cdot}cm$으로 열처리에 따른 큰 변화가 없다. 또한 ZTO-GZO multi-layer (720 nm)의 경우 비저항이 $2.11{\times}10^{-3}{\Omega}{\cdot}cm$에서 $500^{\circ}C$에서 열처리 후 $3.67{\times}10^{-3}{\Omega}{\cdot}cm$으로 GZO에 비하여 상대적으로 변화폭이 작다. 또한 ZTO의 두께에 따른 영향을 확인하기 위하여 ZTO를 2 scan, 4 scan, 6 scan 공정 진행 및 $500^{\circ}C$에서 열처리 후 ZTO, ZTO-GZO thin film의 비저항을 측정하였다. ZTO의 경우 $3.34{\times}10^{-1}{\Omega}{\cdot}cm$ (2 scan), $3.62{\times}10^{-1}{\Omega}{\cdot}cm$ (4 scan), $4.1{\times}10^{-1}{\Omega}{\cdot}cm$ (6 scan)으로 큰 차이가 없으며, ZTO-GZO에서도 $3.73{\times}10^{-3}{\Omega}{\cdot}cm$ (2 scan), $3.42{\times}10^{-3}{\Omega}{\cdot}cm$ (4 scan), $3.67{\times}10^{-3}{\Omega}{\cdot}cm$ (6 scan)으로 큰 차이가 없음을 확인하였다. 염료감응 태양전지에 적용하여 기존에 사용되는 FTO대신에 ZTO-GZO를 사용하며, 가격적 측면, 성능적 측면에서 개선 가능할 것으로 생각된다.

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Screening of Spray-Dried K2CO3-Based Solid Sorbents using Various Support Materials for CO2 Capture

  • Eom, Tae Hyoung;Lee, Joong Beom;Baek, Jeom In;Ryub, Chong Kul;Rhee, Young Woo
    • KEPCO Journal on Electric Power and Energy
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    • v.1 no.1
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    • pp.115-120
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    • 2015
  • $K_2CO_3$-based dry regenerable sorbents were prepared by spray-drying techniques to improve mass produced $K_2CO_3-Al_2O_3$ sorbents (KEP-CO2P, hereafter), and then tested for their $CO_2$ sorption capacity by a $2,000Nm^3/h$ (0.5 MWe) $CO_2$ capture pilot plant built for Unit 3 of the Hadong thermal power station in 2010. Each of the sample sorbents contained 35 wt.% $K_2CO_3$ as the active materials with various support materials such as $TiO_2$, MgO, Zeolite 13X, $Al_2O_3$, $SiO_2$ and hydrotalcite (HTC). Their physical properties and reactivity were tested to evaluate their applicability to a fluidized-bed or fast transport-bed $CO_2$ capture process. The $CO_2$ sorption capacity and percentage utilization of $K_2CO_3$-MgO based sorbent, Sorb-KM2, was $8.6g-CO_2/100g$-sorbents and 90%, respectively, along with good mechanical strength for fluidized-bed application. Sorbs-KM2 and KT were almost completely regenerated at $140^{\circ}C$. No degradation of Sorb-KM by $SO_2$ added as a pollutant in flue gas was observed during a cycle test.

Removal of Alkali Metal Ion using Inorganic Ion Exchanger (무기이온교환제를 이용한 알카리 금속이온 제거)

  • Ha, Ji-Won;Yi, Kwang Bok;Lee, Si Hyun;Rhee, Young-Woo;Kim, Jong-Nam
    • Korean Chemical Engineering Research
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    • v.46 no.2
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    • pp.423-429
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    • 2008
  • Currently, Ash-free clean coal producing process by solvent extraction is under development. The produced ash-free clean coal can be directly combusted in a gas turbine which results in substantial improvement of power generation efficiency. However, the clean coal produced by the solvent extraction still contain trace amount of alkali metal which may cause corrosion on turbine blades during the direct combustion. In present work ${\alpha},{\beta}$-metal (Zr and Ti) phosphates and H-Y zeolite were synthesized and their ion exchange characterizations were investigated for the application on alkali metal removal for clean coal production. $Na^+$ ion removal capacities of the metal phosphates and H-Y zeolite were measured and compared in both aqueous solution (100 ppmw, $Na^+$) and coal dissolved N-methyl-2-pyrrolidone (NMP, 12 ppmw $Na^+$) at elevated temperature. In aqueous solution, the ${\beta}$ form metal phosphates showed very high ion exchange capacities compared to ${\alpha}$ form. ${\beta}$ form metal phosphates also showed higher $Na^+$ removal capacities than H-Y zeolite. In ion exchange medium of NMP, all the ${\alpha}$ form metal phosphates showed over 90% of $Na^+$ ion removal efficiency in the temperature range of 200 to 400 while that of H-Y zeolite decreased as a half when the temperature was over 350. In addition, the regenerated metal phosphates by acid treatment showed no sign of degradation in $Na^+$ removal efficiency. Among the metal phosphates used, $Zr_{0.75}Ti_{0.25}(HPO_4)_2$ showed the best performance in $Na^+$ removal and is expected to be the most suitable inorganic ion exchanger for the alkali metal removal process.

Classification of Chemical Warfare Agents Using Thick Film Gas Sensor Array (후막 센서 어레이를 이용한 화학 작용제 분류)

  • Kwak Jun-Hyuk;Choi Nak-Jin;Bahn Tae-Hyun;Lim Yeon-Tae;Kim Jae-Chang;Huh Jeung-Soo;Lee Duk-Dong
    • Journal of the Korea Institute of Military Science and Technology
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    • v.7 no.2 s.17
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    • pp.81-87
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    • 2004
  • Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.

The Carrier Gas Effects on Selectivity and the Enhancement of Selectivity by Surface Passivation in Chemical Vapor Deposition of Copper Films (구리 박막의 선택적 화학기상 증착에 대한 운반 기체의 영향과 기판 표면 처리에 의한 선택성 증진 효과)

  • Kim, Seok;Park, Jong-Man;Choi, Doo-Jin
    • Korean Journal of Materials Research
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    • v.7 no.9
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    • pp.811-823
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    • 1997
  • 차세대 반도체 배선분야에서, Cu박막은 현재의 AI을 대체할 물질로서 대두되고 있으며 CVD에 의한 선택적 증착은 Cu의 patterning과 관련하여 상당한 관심을 일으키고 있다. 본 연구에서는 (hfac)Cu(VTMS)의 유기원료를 사용하여, CVD공정변수, 운반기체, 표면 처리 공정에 따른 SiO$_{2}$, TiN, AI기판에 대한 선택성을조사하였다. 선택성은 저온(15$0^{\circ}C$), 저합(0.3Torr)에서 향상될 수 있었으며, 특히, HMDS in-situ-predosing공정에 의해 더욱 향상될 수 있었다. 모든 경우에 대해, H$_{2}$운반기체가 Ar 보다 짧은 incubation time과 높은 증착 속도가 얻어졌으며, Cu입자들의 크기가 작고 연결상태가 보다 양호하였다. 이는 H$_{2}$경우에 기판표면에 원료가 흡착되어 핵을 형성시키는 위치 (-OH)가 보다 많이 제공되기 때문으로 여겨진다. 이러한 미세구조의 차이는 H$_{2}$경우에 보다 낮은 비저항을 얻게 했다. HMDS in-situ predosing공정에 의한 Cu박막내 불순물 차이는 없었으며 뚜렷한 비저항의 차이도 나타나지 않았다.

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Fabrication of MFISFET Compatible with CMOS Process Using $SrBi_2Ta_2O_9$(SBT) Materials

  • You, In-Kyu;Lee, Won-Jae;Yang, Il-Suk;Yu, Byoung-Gon;Cho, Kyoung-Ik
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.1
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    • pp.40-44
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    • 2000
  • Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

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Intermediate band solar cells with ZnTe:Cr thin films grown on p-Si substrate by pulsed laser deposition

  • Lee, Kyoung Su;Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.247.1-247.1
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    • 2016
  • Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

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A Prediction of Coal Ash Slagging for Entrained Flow Gasifiers (분류층 석탄가스화기 Slag 용융특성 예측)

  • Koo, Jahyung;Kim, Bongkeum;Kim, Youseok
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.108.1-108.1
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    • 2010
  • 분류층 가스화기는 석탄과 산소(공기) 및 수증기가 반응하여 $1200{\sim}1600^{\circ}C$의 고온, 20~60기압의 고압에서 작동되어 합성가스를 생성하며 합성가스에 포함된 입자 및 황화합물 등을 정제설비를 통하여 정제 후 발전 및 화학원료로 사용한다. 석탄가스화 중 석탄에 포함된 대부분의 회분은 용융슬래그 형태로 가스화기 벽면을 따라 흘러 내려 가스화기 하부의 냉각수조에서 급랭되어 배출된다. 이때 용융슬래그의 원활한 배출을 위해서는 일정범위의 점도를 유지하는 것이 필요하다. 슬래그의 점도는 가스화기 온도 및 Ash의 조성에 따라 크게 변하며 가스화기 설계 및 운전 시 매우 중요한 변수이다. 따라서 최적의 설계 및 운전을 위해서는 Ash의 점도예측이 중요하며, 분류층 가스화기내부에서 Ash 점도 예측을 위한 DooVisco 프로그램을 개발하였다. DooVisco는 가스화기 내부에서 슬래그 용융온도 및 온도별 점도, 가스화기 최소 운전온도 및 석회석 투입 효과 분석뿐만 아니라 석탄의 혼합 사용 시의 특성 예측도 가능하도록 개발되었다. DooVisco는 슬래그 주요 4성분인 SiO2, Al2O3, CaO, FeO 성분에 대한 Phase Diagram을 이용하여 1차적으로 슬래그용융온도(Liquidus Temperature)를 예측하고, 주요 4 성분 외에 Na2O, MgO, K2O, TiO2 등을 고려한 Kalmanovich Model을 이용하여 점도를 예측한다. 최종적으로 슬래그 용융온도와 점도를 활용하여 분류층 가스화기 운전가능 온도범위를 예측한다. 개발된 DooVisco를 활용하여 300MW급 실증 IGCC 플랜트에 사용가능성이 있는 석탄을 대상으로 슬래그의 용융온도 및 점도 등을 예측하였으며 최적 운전을 위한 슬form점도 조절용 Flux인 석회석 투입량 등을 평가하였다. 평가 결과 슬래그 용융온도가 $1700^{\circ}C$ 이상으로 석회석 투입이 필요하다고 판단되었다. 약 가스화기 내부 온도를 $1500^{\circ}C$ 정도에서 원활한 운전을 위해서는 석탄 대비 약 10% 내외의 석회석 투입이 필요할 것으로 평가되었다. DooVisco는 분류층 가스화기 설 계시 가스화기 최적 운전 온도 설정 및 Flux 투입필요성, 종류, 투입량 선정에 활용될 수 있을 뿐만 아니라 플랜트 운전시 석탄의 탄종 적합성 등을 판단하는데 활용될 수 있을 것이라 판단된다.

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Applicability of CCT-ICP-MS for the Determination of Trace Elements in Airborne Particulate Matters (CCT-ICP-MS의 대기분진내 미량원소분석에 대한 적용성)

  • 임종명;이진홍;서만철
    • Journal of Korean Society for Atmospheric Environment
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    • v.20 no.3
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    • pp.397-409
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    • 2004
  • There has been few studies of either domestic or international to apply CCT-ICP-MS for the precise analysis of As and Cr components associated with airborne particulate matter. To date, the use of CCT-ICP-MS is strongly recommended for the accurate analysis of the toxic trace metals; this is because CCT-ICP-MS technique prevents polyatomic spectral interferences involved in the determination of As and/or Cr components. Taking advantage of CCT-ICP-MS technique, the measurements of about 20 metals were undertaken in this study. The standard reference material (NIST SRM 2783) was used for analytical quality control. To improve analytical accuracy and of acid efficiency, we selected nitric acid based on a test of three kinds of acid for microwave digestion method 1 ) nitric acid. 2) nitric acid and hydrogen peroxide. and 3) nitric acid and perchloric acid. When this method was employed, relative errors to SRM values of Al, As, Cr Fe, Mg, Mn, Pb, Sb, V, and Zn fell below 20%, while those or Ca, Si, and Ti were higher than 20%. The overall results of our study show that the concentrations of As and V determined by CCT-ICP-MS were satisfied with the certificated values within a relative error of 20e1c, whereas those determined by ICP-MS were 10 times higher than the certificated values.