• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.301-307
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• 1997

Monodisperse, spherical $SiO_2/TiO_2$ composite fine powders were prepared by modified Sol-Gel process which $TiO_2$ fine Powders was used as a seed particles for condensation of TEOS (Tetraethyl Orthosilicate). The reaction was carried out under $N_2$ atmosphere at ambient temperature using $NH_3$ as a catalyst. Ethanol was used as a solvent. Drying process was carried out with vacuum trap which cooled by liquid $N_2$. The reaction variables were the concentration of TEOS, the concentration of ammonia, the size of $TiO_2$ seed and molar ratio of $SiO_2/TiO_2$. The optimum condition for the preparation of $SiO_2/TiO_2$ composite fine powders without agglomeration was [TEOS]=0.3M, [$NH_3$]=0.7M, size of $SiO_2/TiO_2$ seed = 200~300nm.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.4
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• pp.451-463
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• 2004

The performance of disk-type catalytic filters impregnated by TiO$_2$ or TiO$_2$-3Al$_2$O$_3$ㆍ 2SiO$_2$ supports and V$_2$O$_{5}$ catalyst was evaluated for selective catalytic reduction (SCR) of NO with ammonia as a reductant. XRD, FT -IR, BET and SEM were used to characterize the catalytic filters prepared in this work. Optimal V$_2$O$_{5}$ loading and reaction temperature for V$_2$O$_{5}$/TiO$_2$ catalytic filters were 3-6 wt.% and 350-40$0^{\circ}C$ at GHSV 14,300 $hr^{-1}$ in the presence of oxygen, respectively. With increasing the V$_2$O$_{5}$ loading from 0.5 to 6 wt%, NO conversion increased from 24 to 96% at 40$0^{\circ}C$ and 14.300$hr^{-1}$, and maintained at 80% over in the V$_2$O$_{5}$ loading range of 3-6 wt.% and then dropped at V$_2$O$_{5}$ loading of 7wt.% over. In comparing V$_2$O$_{5}$/ TiO$_2$ and V$_2$O$_{5}$/ TiO$_2$-3Al$_2$O$_3$ㆍ2SiO$_2$ catalytic fillers, which have same 3wt.% V$_2$O$_{5}$ loading, the V$_2$O$_{5}$/ TiO$_2$-3A1$_2$O$_3$ㆍ2SiO$_2$ catalytic filter showed higher activity than V$_2$O$_{5}$/ TiO$_2$ catalytic filter, but higher differential pressure drops owing to its low air permeability. low air permeability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.80-80
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.208-209
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• 2008

Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.69-77
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• 2001

Wear and Friction characteristics of plasma-sprayed Cr$_2$O$_3$ coating and Cr$_2$O$_3$ coating included SiO$_2$ and TiO$_2$ against SiC ball have been investigated under different loads. Worn surfaces were observed by SEM and worn surfaces were analyzed by EDS. The Friction coefficient and the Wear resistance of Cr$_2$O$_3$-5SiO$_2$-3TiO$_2$coating was less than that of Cr$_2$O$_3$ coating. The main mechanisms were plastic deformation and brittle fracture. The film on surface were made by plastic deformation and compacted wear debris. This film protect wear of coating

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.1002-1005
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• 1998

Bismuth titanate thin films were prepared on {{{{ { SrTiO}_{3 } }}(100) and Si(100) substrates by dipping-pyrolysis pro-cess using metal naphthenates as starting materials. crystallinity and in-phase alignment of the films were analyzed by X-ray diffraction $\theta$-2$\theta$ scans and $\beta$ scans (pole-figures) respectively. Highly c-axis-oriented {{{{ { { {Bi }_{4 }Ti }_{3 }O }_{12 } }} thin films with smooth surfaces were obtained after heat treatment at 75$0^{\circ}C$ on {{{{ { SrTiO}_{3 } }}(100) sub-strate while the films grown of Si(100) exhibited polycrstalline characteristics. C-axis oriented film show-ed an epitaxial relationship with the {{{{ { SrTiO}_{3 } }} substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.39-40
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• 2005

Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.

• Journal of the Korean Ceramic Society
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• v.30 no.7
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• pp.535-542
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• 1993

It was investigated in this study that a preparation method, activation energy, surface area, pore volume, pore size distribution and DTA analysis of the dry gel in process of producing monolithic porous gel in Li2O-Al2O3-TiO2-SiO2 system by the sol-gel technique using metal alkoxides. Activation energy for gellation according to the variation of water concentration and the kind of catalysts ranged from 10 to 20kcal/mole. Monolithic dry gels were prepared after drying at 9$0^{\circ}C$ when the amount of water for gellation was 4~8 times more than the stoichiometric amount, that was necessary for the full hydrolysis of the mixed metal alkoxide. The specific surface area, the pore volume, the average pore radius of the dried gel at 18$0^{\circ}C$ according to the various kinds of catalyst were about 348~734$m^2$/g, 0.35~0.70ml/g and 10~35$\AA$, respectively. It showed that the dry gels were porous body. As a result ofthe analysis of DTA, it was confirmed that the exothermaic peaks at 715$^{\circ}C$ and 77$0^{\circ}C$ was clue to the crystallization of dried gel.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.446-452
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• 2007

[ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.