• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.698-702
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• 2005

Dielectric and Piezoelectric properties of complex perovskite 0.92Pb($Zr_{1/2}Ti_{1/2})O_{3}-(0.08-x)Pb(Cu_{1/3}Nb_{2/3})O_{3}-xPb(Mn_{1/3}Nb_{2/3})O_{3}(0{\leq}x{\leq}0.080$) (PZT-PCN-PMN) system were investigated as a function of PMN content. With the increase of PMN content of the sintered specimens, tetragonal phase was coexisted with rhombohedral phase, the dielectric constant was decreased, mechanical quality factor ($Q_{m}$) was inceased, and optimal sintering temperature was increased up to 1050$^{\circ}C$. For the composition of x = 0.064 sintered at 1050$^{\circ}C$ for 2 h, 1939 of maximum mechanical quality factor ($Q_{m}$), 57$\%$ of electromechanical coupling factor ($k_{p}$), and 1100$^{\circ}C$ of dielectric constant, 0.37$\% $ of dielectric loss (tan $\delta$) were obtained.

• Advances in materials Research
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• v.1 no.2
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• pp.115-128
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• 2012

The structural and electrical properties of $(1-x)Ba(Sm_{1/2}Nb_{1/2})O_3-xBaTiO_3$; ($0{\leq}x{\leq}1$) ceramics were prepared by conventional ceramic technique at $1375^{\circ}C$/7 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were derived from the X-ray diffraction (XRD) data using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm m. Dielectric study revealed that the compound $0.75Ba(Sm_{1/2}Nb_{1/2})O_3-0.25BaTiO_3$ is having low and ${\varepsilon}^{\prime}$ and ${\varepsilon}^{{\prime}{\prime}}$ a low $T_{CC}$ (< 5%) in the working temperature range (up to+$100^{\circ}C$) which makes this composition suitable for capacitor application and may be designated as 'Stable Low-K' Class I material as per the specifications of the Electronic Industries Association. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in the system. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compounds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.204-208
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• 2012

$TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.233-241
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• 1990

본 연구에서는 xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-yBa(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-zPbTiO(0.50.leq.x.leq.0.60, 0.10.leq.y.leq.0.20, 0.20.leq.z.leq.0.40)세라믹을 1050.deg.C에서 2시간동안 유지시켜 일반소성법으로 제작하였다. 시편 제작시 조성은 조성변태 상경계부근을 선택하였으며 Ba(Zn$_{1}$3/ Nb$_{2}$3/)O$_{3}$ 고용량에 따른 purochlore상의 억제 및 그 영향을 조사하고 구조적, 유전적 및 압전적 특성을 측정하였다. X-선 회절분석 및 미세구조의 관찰 결과, Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량에 따라 pyrochlore상 및 미반응 물질등은 억제되어 0.20mol 고용된 시편에서는 균질한 perovskite상이 형성되었다. Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량이 증가함에 따라 유전상수는 증가하여 0.50PZN-0.20BZN-0.30PT시편의 경우 6880.9의 높은 값을 나타내었으며 정전용량의 온도계수는 감소하여 0.383[%/.deg.C]의 양호한 값을 나타내었다. 큐리온도는 PbTiO$_{3}$의 고용량이 0.20mol에서 0.40mol로 증가함에 따라 30.deg.C에서 170.deg.C로 증가하였다. 전기기계 결합계수 (K$_{p}$), 기계적 품질계수(Qm) 및 압전전하 계수 (d$_{33}$)는 조성변태 상경계 부근의 조성에서 크게 나타났으며 0.60PZN-0.15BZN-0.25PT 시편의 경우 각각 58.5%, 120.5, 150x$10^{-12}$[C/N]의 값을 나타내었다.다.다.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.193-195
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• 1994

In this study, the structural, dielectric and piezoelectrical properties of $xPb(Mg_{1/2}W_{1/2})O_3-(1-x)[0.41Pb(Ni_{1/3}Nb_{2/3})O_3-0.36PbTiO_3-0.23P Zr)_3]$ (x=0, 0.01, 0.02, 0.03, 0.04, 0.05) system ceramics were investigated. The dielectric constant ${\varepsilon_{33}}^{\tau}$ at loon temperature increased up to 3mol% PMW and decreased with further PMW content. The specimen with 1mol% $Pb(Mg_{1/2}W_{1/2})O_3$, which has the ${\varepsilon_{33}}^{\tau}=5509$, kp=59[%] and $d_{33}=758{\times}10^{-12}[C/N]$, exhibits good characteristics.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.294-302
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• 1998

$Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ films have been synthesized on Pt/Ti/$SiO_2$/Si substrates using rfmagnetron sputtering Concentration of Fe and Nb in the deposited films was adjusted to near stoichiometry through the control of target composition, Films deposited with adjusted to near stoichiometry showed better electrical properties such as dielectic and leakage characteristics. Crystallinity and dielectric constant increased with increasing excess PbO upto 9 mol% This study also showed that dielectric constant and leakage current characteristics improved by optimum content of $O_2$ flow during deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.91-92
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• 2007

An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.27 no.4
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• pp.273-278
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• 1983

With the synthetic standards, valuable metals $(Ta_2O_5, Nb_2O_5, TiO_2, SnO_2$, and $ZrO_2$) in the tin slags have been determined by the x-ray fluorescence spectrometry. The powder sample and the standards are homogeneously mixed with anhydrous $Li_2B_4O_7$ and La_2O_3$ in weight ratio of 15 : 42 : 3 respectively. The mixed material is fused at $1,150^{\circ}C$ for 30 minutes to be changed into the glass bead. The bead is ground to (-) 325 mesh size and pelletized. The analytical results obtained in this work are consistent with the data obtained by other common methods within allowable error range. The standard deviation for $Ta_2O_5$ in PTS-H sample is 0.12 % at level of 3.40 % content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.310-310
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• 2008

본 연구에서는 (1-x) Pb(Zr0.515Ti0.485)$O_3$ - x Pb$(Sb_{1/2}Nb_{1/2})O_3$ + 0.5wt% $MnO_2$ 조성에 Pb$(Sb_{1/2}Nb_{1/2})O_3$ (PSN) (x=0.02, 0.04, 0.06, 0.08) 변화에 따른 미세구조 및 압전, 유전특성에 관해 고찰하였다. PSN 치환량이 증가함에 따라 정방정 (tetragonal)구조에서 삼방정(rhombohedral)구조로 상전이가 일어났으며, 결정립의 크기가 작아지는 것을 확인하였다. 전기기계결합계수 (kp) 는 PSN이 4 mol % 치환됨에 따라 증가하였으며, 더 이상 치환 시 감소하였다. PSN 치환에 따른 전기적 특성은, 결정구조, 결정립의 크기 및 2 차상 등의 미세구조와 긴밀한 관계가 있는 것으로 보여진다. 상경계(Morphotropic Phase Boundary) 영역인 0.96 Pb(Zr0.515Ti0.485)$O_3$ - 0.04 Pb$(Sb_{1/2}Nb_{1/2})O_3$ + 0.5wt% $MnO_2$ 조성에서 $\varepsilon{^T}_{33}/\varepsilon_o$ = 1109, $k_p$= 70.8 (%), $d_{33}$= 325 (pC/N)의 우수한 특성을 나타내었다.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.178-183
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• 2016

Ferroelectric relaxor ceramics with $BaTiO_3-NaNbO_3-Bi(Mg_{1/2}Ti_{1/2})O_3$ ternary compositions (BT-NN-BMT) have been prepared by sol-gel powder synthesis and consequent bulk ceramic processing. Through the modified chemical approach, fine and single-phase complex perovskite compositions were successfully obtained. Temperature and frequency dependent dielectric properties indicated typical relaxor characteristics of the BT-NN-BMT compositions. The ferroelectric-paraelectric phase transition became diffusive when NN and BMT were added to form BT based solid solutions. BMT additions to the BT-NN solid solutions affected the high temperature dielectric properties, which might be attributable to the compositional inhomogeneity of the complex perovskite and resulting weak dielectric coupling of the Bi-containing polar nanoregions (PNRs). The temperature stability of the dielectric properties was good enough to satisfy the X9R specification. The quasi-linear P-E response and the temperature- stable dielectric properties imply the high potential of this ceramic compound for use in high temperature capacitors.