• Title/Summary/Keyword: $TiO_2-_xN_x$

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Synthesis of Nanocrystalline ZnFe2O4 by Polymerized Complex Method for its Visible Light Photocatalytic Application: An Efficient Photo-oxidant

  • Jang, Jum-Suk;Borse, Pramod H.;Lee, Jae-Sung;Jung, Ok-Sang;Cho, Chae-Ryong;Jeong, Euh-Duck;Ha, Myoung-Gyu;Won, Mi-Sook;Kim, Hyun-Gyu
    • Bulletin of the Korean Chemical Society
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    • v.30 no.8
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    • pp.1738-1742
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    • 2009
  • Nanocrystalline Zn$Fe_2O_4$ oxide-semiconductor with spinel structure was synthesized by the polymerized complex (PC) method and investigated for its photocatalytic and photoelectric properties. The observation of a highly pure phase and a lower crystallization temperature in Zn$Fe_2O_4$ made by PC method is in total contrast to that was observed in Zn$Fe_2O_4$ prepared by the conventional solid-state reaction (SSR) method. The band gap of the nanocrystalline Zn$Fe_2O_4$ determined by UV-DRS was 1.90 eV (653 nm). The photocatalytic activity of Zn$Fe_2O_4$ prepared by PC method as investigated by the photo-decomposition of isopropyl alcohol (IPA) under visible light (${\geq}$ 420 nm) was much higher than that of the Zn$Fe_2O_4$ prepared by SSR as well as Ti$O_{2-x}N_x$. High photocatalytic activity of Zn$Fe_2O_4$ prepared by PC method was mainly due to its surface area, crystallinity and the dispersity of platinum metal over Zn$Fe_2O_4$.

Thermal Stability of Ti-Si-N as a Diffusion Barrier (Cu와 Si간의 확산방지막으로서의 Ti-Si-N에 관한 연구)

  • O, Jun-Hwan;Lee, Jong-Mu
    • Korean Journal of Materials Research
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    • v.11 no.3
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    • pp.215-220
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    • 2001
  • Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

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Surface Characteristics and Electrochemical Behaviors of TiN and ZrN Coated Orthodontic Mini-screw (ZrN 및 TiN 코팅된 치과교정 용 미니나사의 표면특성과 전기화학적 거동)

  • Kim, S.J.;Moon, Y.P.;Park, G.H.;Jo, H.H.;Kim, W.G.;Son, M.K.;Choe, H.C.
    • Journal of the Korean institute of surface engineering
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    • v.41 no.5
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    • pp.232-239
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    • 2008
  • The dental orthodontic mini-screw requires good mechanical properties and high corrosion resistance for implantation in the bone. The purpose of this study was to investigate the electrochemical characteristics of TiN and ZrN coated orthodontic mini-screws, mini-screws were used for experiment. Ion plating was carried out for mini-screw using Ti and Zr coating materials with nitrogen gas. Ion plated surface of each specimen w as o bserved with f ield emission scanning e lectron microscopy ( FE-SEM), e nergy dispersive x-ray spectroscopy (EDX), and electrochemical tester. The surface of TiN and ZrN coated mini-screw were more smooth than that of other kinds of non-coated mini-screw due to dercrease of machined defects. The corrosion current density of the TiN and ZrN coated mini-screw decreased compared to non-coated sample. The corrosion potential of TiN and ZrN coated mini-screw were higher than that of non-coated mini-screw in 0.9% NaCl solution. The pitting corrosion resistance increased in the order of ZrN coated, TiN coated and non-coated wire. Pitting potential of ZrN coated mini-screw was the highest in the other specimens.

Doped Sol-gel TiO2 Films for Biological Applications

  • Gartner, M.;Trapalis, C.;Todorova, N.;Giannakopoulou, T.;Dobrescu, G.;Anastasescu, M.;Osiceanu, P.;Ghita, A.;Enache, M.;Dumitru, L.;Stoica, T.;Zaharescu, M.;Bae, J.Y.;Suh, S.H.
    • Bulletin of the Korean Chemical Society
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    • v.29 no.5
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    • pp.1038-1042
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    • 2008
  • Mono and multilayer TiO2(Fe, $PEG_{600}$) films were deposited by the dip-coating on $SiO_2$/glass substrate using sol-gel method. In an attempt to improve the antibacterial properties of doped $TiO_2$ films, the influence of the iron oxides and polyethilenglycol ($PEG_{600}$) on the morphological, optical, surface chemical composition and biological properties of nanostructured layers was studied. Complementary measurements were performed including Spectroscopic Ellipsometry (SE), Scanning Electron Microscopy (SEM) coupled with the fractal analysis, X-Ray Photoelectron Spectroscopy (XPS) and antibacterial tests. It was found that different concentrations of Fe and $PEG_{600}$ added to coating solution strongly influence the porosity and morphology at nanometric scale related to fractal behaviour and the elemental and chemical states of the surfaces as well. The thermal treatment under oxidative atmosphere leads to films densification and oxides phase stabilization. The antibacterial activity of coatings against Escherichia Coli bacteria was examined by specific antibacterial tests.

Dependence of Poling Field on Pyroelectric Property of $Pb_{0.9}La_{0.1}TiO_3$ Ceramics

  • D. J. You;B. S. Kang;Park, S. K.
    • The Korean Journal of Ceramics
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    • v.6 no.3
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    • pp.291-295
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    • 2000
  • The pyroelectric property of $Pb_{0.9}La$_{0.1}TiO_3$ceramics in a range of 1.3-4.1$\mu\textrm{m}$, fabricated by conventional solid sintering, was investigated as a function of poling field. The pyroelectric of the 4.1$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics is higher than that of the 1.3$\mu\textrm{m}$ and 1.7$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics at a low poling field and the pyroelectric coefficient is 25nC/$\textrm{cm}^2$K at a 4kV/mm poling field in every grain size. In order to explain this phenomenon, the intrinsic and extrinsic effects in view of the definition of the pyroelectric coefficient are introduced. The intrinsic and extrinsic effects on the pyroelectric property were investigated by measuring the tetragonal ratio and the $I_{002}$ with temperature with high temperature X-ray diffractometer. The change of spontaneous polarization and the $90^{\circ}$domain wall motion with temperature in the 1.3$\mu\textrm{m}$ and 4.2$\mu\textrm{m}$ of $Pb_{0.9}La$_{0.1}TiO_3$ceramics have no effects on the pyroelectric coefficient. In our study, it can be seen that the pyroelectric coefficient is related to the quantity of $180^{\circ}$domain switching after poling treatment.

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The Piezoelectric and Dielectric Properties of PZT-PMFW Piezoelectric Ceramics (PZT-PMFW 압전 세라믹의 압전 및 유전 특성)

  • 이종섭;이문주;이용희;정수현;임기조
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.689-692
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    • 2001
  • In this paper, the pizoelectric and dielectric properties of 0.95Pb(ZrxTil-x)O$_3$- 0.05Pb(Mn$\_$0.2/Fe$\_$0.4/W$\_$0.4/)O$_3$piezoelectric ceramics is investigated as a function of Zr/Ti mole ratio. Also, MPB(Morphotropic Phase Boundary) and optimal sintering temperature is studied using XRD and SEM. As a results, when Zr/Ti mole ratio is 52/48, electromechanical coupling factor, k$\_$p/, is 58[%], permittivity, $\varepsilon$$\^$T/$\_$33//$\varepsilon$0, is 1360 and piezoelectric strain constant, d$\_$33/ is 265[pC/N] and the piezoelectric and dielectric properties become maximum. Phase transition temperature of its ternary piezoelectric system is about 350[$^{\circ}C$]. From the XRD analysis, when Zr/Ti mole ratio is 52/48, tetragonal phase transits to rhombohedral phase. Also, From measuring results of the sintering density, when sintering temperature is 1050[$^{\circ}C$], sintering density become maximum and is about 7930[kg/㎥], and average grain size is about 2-3[$\mu\textrm{m}$].

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Improving the Light Extraction Efficiency of GRIN Coatings Pillar Light Emitting Diodes

  • Moe, War War;Aye, Mg;Hla, Tin Tin
    • Korean Journal of Materials Research
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    • v.32 no.6
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    • pp.293-300
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    • 2022
  • This study investigated a graded-refractive-index (GRIN) coating pattern capable of improving the light extraction efficiency of GaN light-emitting diodes (LEDs). The planar LEDs had total internal reflection thanks to the large difference in refractive index between the LED semiconductor and the surrounding medium (air). The main goal of this paper was to reduce the trapped light inside the LED by controlling the refractive index using various compositions of (TiO2)x(SiO2)1-x in GRIN LEDs consisting of five dielectric layers. Several types of multilayer LEDs were simulated and it was determined the transmittance value of the LEDs with many layers was greater than the LEDs with less layers. Then, the specific ranges of incident angles of the individual layers which depend on the refractive index were evaluated. According to theoretical calculations, the light extraction efficiency (LEE) of the five-layer GRIN is 25.29 %, 28.54 % and 30.22 %, respectively. Consequently, the five-layer GRIN LEDs patterned enhancement outcome LEE over the reference planar LEDs. The results suggest the increased light extraction efficiency is related to the loss of Fresnel transmission and the release of the light mode trapped inside the LED chip by the graded-refractive-index.

Synthesis and Characterization of Thiophene-Based Copolymers Containing Urethane and Alkyl Functional Side Chains for Hybrid Bulk Heterojunction Photovoltaic Cell Applications

  • Im, Min-Joung;Kim, Chul-Hyun;Song, Myung-Kwan;Park, Jin-Su;Lee, Jae-Wook;Gal, Yeong-Soon;Lee, Jun-Hee;Jin, Sung-Ho
    • Bulletin of the Korean Chemical Society
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    • v.32 no.2
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    • pp.559-565
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    • 2011
  • The following noble series of statistical copolymers, poly[(2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane)-co-3-hexylthiophene] (PURET-co-P3HT), were synthesized by the chemical dehydrogenation method using anhydrous $FeCl_3$. The structure and electro-optical properties of these copolymers were characterized using $^1H$-NMR, UV-visible spectroscopy, elemental analysis, GPC, DSC, TGA, photoluminescence (PL), and cyclic voltammetry (CV). The statistical copolymers, PURET-co-P3HT (1:0, 2:1, 1:1, 1:2, 1:3), were soluble in common organic solvents and easily spin coated onto indium-tin oxide (ITO) coated glass substrates. Hybrid bulk heterojunction photovoltaic cells with an ITO/G-PEDOT/PURET-co-P3HT:PCBM:Ag nanowires/$TiO_x$/Al configuration were fabricated, and the photovoltaic cells using PURET-co-P3HT (1:2) showed the best photovoltaic performance compared with those using PURET-co-P3HT (1:0, 2:1, 1:1, 1:3). The optimal hybrid bulk heterojunction photovoltaic cell exhibits a power conversion efficiency (PCE) of 1.58% ($V_{oc}$ = 0.82 V, $J_{sc}$ = 5.58, FF = 0.35) with PURET-co-P3HT (1:2) measured by using an AM 1.5 G irradiation (100 mW/$cm^2$) on an Oriel Xenon solar simulator (Oriel 300 W).

Microstructures and Electrical Properties of PSN-PZT Ceramics for Piezoelectric Speaker (압전 스피커 응용을 위한 PSN-PZT계 세라믹스의 미세구조 분석 및 전기적 특성 평가)

  • Kim, Sung-Jin;Kweon, Soon-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.2
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    • pp.110-115
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    • 2019
  • $Pb(Sb_{0.5}Nb_{0.5})_x(Zr_{0.51}Ti_{0.49})_{1-x}O_3$ (abbreviation: PSN-PZT) ceramics were synthesized, using conventional bulk ceramic processing technology, with various PSN doping contents. The maximum density of PSN-PZT was 97% of the theoretical density in the samples sintered at $1,250^{\circ}C$. The maximum values of the piezoelectric properties achieved using the conventional processes were: $k_p$ of 0.625, $d_{33}$ of 531 pC/N, and $g_{33}$ of $33mV{\cdot}m/N$. Finally, we fabricated a piezo-speaker with the optimized PSN-PZT ceramics. The SPL of the speaker was measured at a distance of 1 m, with a driving voltage of $40V_{rms}$ in the frequency range of ~300 Hz to 9 kHz. The measured $SPL_{max}$ was at a very high level (95 dB), which was superior in quality in comparison with those of other commercial products.

Atomic Layer Deposition of $Sb_2S_3$ Thin Films on Mesoporous $TiO_2$

  • Han, Gyu-Seok;Jeong, Jin-Won;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.282-282
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    • 2013
  • The antimony sulfide ($Sb_2S_3$) thin films were deposited using the gas phase method which known as atomic layer deposition (ALD) on mesoporous micro-films. Tris (dimethylamido) antimony (III[$(Me_2N)_3Sb$] and hydrogensulfide ($H_2S$) were used as precursors to deposit $Sb_2S_3$. Self-terminating nature of $(Me_2N)_3Sb$ and $H_2S$ reaction were demonstrated by growth rate saturation versus precursors dosing time. Absorption spectra and extinction coefficient were investigated by UV-VIS spectroscopy. Scanning electron microscopic analysis and X-ray photoelectron spectroscopy (XPS) depth profile were employed to determine the conformal deposition.

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