• The Journal of Korean Academy of Prosthodontics
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• v.45 no.2
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• pp.169-181
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• 2007

Statement of problem: Titanium is well known as a proper metal for the dental restorations, because it has an excellent biocompatibility, resistance to corrosion, and mechanical property. However, adhesion between titanium and dental porcelains is related to the diffusion of oxygen to the reaction layers formed on cast-titanium surfaces during porcelain firing and those oxidized layers make the adhesion difficult to be formed. Many studies using mechanical, chemical and physical methods to enhance the titanium-ceramic adhesion have been actively performed. Purpose: This study meant to comparatively analyse the adhesion characteristics depending on different titanium surface coatings after coating the casts and wrought titanium surfaces with Au and TiN. Material and method: In this study, the titanium specimens (CP-Ti, Grade 2, Kobe still Co. Japan) were categorized into cast and wrought titanium. The wrought titanium was cast by using the MgO-based investment(Selevest CB, Selec). The cast and wrought titanium were treated with Au coating($ParaOne^{(R)}$., Gold Ion Sputter, Model PS-1200) and TiN coating(ATEC system, Korea) and the ultra low fusing dental porcelain was fused and fired onto the samples. Biaxial flection test was done on the fired samples and the porcelain was separated. The adhesion characteristics of porcelain and titanium after firing and the specimen surfaces before and after the porcelain fracture test were observed with SEM. The atomic percent of Si on all sample surfaces was comparatively analysed by EDS. In addition, the constituents of specimen surface layers after the porcelain fracture and the formed compound were evaluated by X-ray diffraction diagnosis. Result: The results of this study were obtained as follows : 1. The surface characteristics of cast and wrought titanium after surface treatment(Au, TiN, $Al_2O_3$ sandblasting) were similar and each cast and wrought titanium showed similar bonding characteristics. 2. Before and after the biaxial flection test, the highest atomic weight change of Si component was found in $Al_2O_3$ sandblasted wrought titanium(28.6at.% $\rightarrow$ 8.3at.%). On the other hand, the least change was seen in Au-Pd-In alloy(24.5at.% $\rightarrow$ 9.1at.%). 3. Much amount of Si components was uniformly distributed in Au and TiN coated titanium, but less amount of Si's was unevenly dispersed on Al2O3 sandblasting surfaces. 4. In X-ray diffraction diagnosis after porcelain debonding, we could see $Au_2Ti$ compound and TiN coating layers on Au and TiN coated surfaces and $TiO_2$, typical oxide of titanium, on all titanium surfaces. 5. Debonding of porcelain on cast and wrought titanium surface after the biaxial flection is considered as a result of adhesion deterioration between coating layers and titanium surfaces. We found that there are both adhesive failure and cohesive failure at the same time. Conclusion: These results showed that the titanium-ceramic adhesion could be improved by coating cast and wrought titanium surfaces with Au and TiN when making porcelain fused to metal crowns. In order to use porcelain fused to titanium clinically, it is considered that coating technique to enhance the bonding strength between coating kKlayers and titanium surfaces should be developed first.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.455-459
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• 2001

In this paper, the dielectric and pizoelectric properties of 0.05Pb(M $n_{04}$ $W_{0.2}$N $b_{0.4}$) $O_3$-0.95(PbZ $r_{x}$ $Ti_{1-x}$ ) $O_3$+yN $b_2$ $O_{5}$ , are investigated as a function of the mole ratio of Zr and the amount of N $b_2$ $O_{5}$ . Also, the phase is analyzed by XRD. When the mole ratio of Zr is 0.51, the electromechanical coupling coefficient( $k_{p}$ ), relative dielectric constant ($\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ ), piezoelectric stain constrain ( $d_{33}$ and dielectric loss tangent show maximum, while the mechanical quality factor shows minimum value ; $k_{p}$ =56.5%, $d_{33}$ =258pC/N, $\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ =1170, $Q_{m}$ =1150, tan$\delta$=0.51%. At that composition, MPB which rhombohedral and tetragonal phase coexist in this ternary system is shown by the results of XRD analysis. Also, when the amount of N $b_2$ $O_{5}$ is 0.3wt%, the mechanical quality factor is increased to about 2000. The phase transition temperature of the ternary piezoelectric ceramic system showed about 35$0^{\circ}C$.TEX>.>.>.

• Journal of Korea Foundry Society
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• v.18 no.6
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• pp.550-554
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• 1998

The microstructures of rapidly solidified binary Ti-Al alloys containing $45{\sim}58\;at%Al$ have been studied using C/S (carbon/sulfur), N/O (nitrogen/oxygen) analyser, X-ray fluorescence spectrometer (XRF), X-ray diffractometer (XRD), optical microscope (OM) and scanning electron microscope (SEM). The phases present in the alloys and their distribution were found to be a sensitive function of Al content. Essentially single-phase (${\gamma}$) microstructures were observed to alloys with 45 at%Al, 55 at%Al and 58 at%Al. In other content alloys, two phase (${\alpha}_2$, ${\gamma}$) microstructures were observed. The 48 at%Al, 52 at%Al alloys contain (${\gamma}+{\alpha}_2$) phase and ${\alpha}_2$ phase. These results indicate that rapid solidification affect the solidification path, then metastable phase forming during solidification.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.107-113
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• 1997

$SrBi_{2}Ta_{2}O_{9}(SBT)$ thin films wcre prepared on $Pt/Ti/SiO_{2}/Si$ suhsrrate by pL~snia-enhanced chemical vapor deposition. Sr and Ta huhhling temperatures were kept ,it $120^{\circ}C$ Iron1 X- ray tiiffriict!on. n~icrostruc~ure. and composjrional analysis of SH7' films, respectivels Hi I~ut~t~lmg tempcl.arure was varied SR'I' thin tilrns dcpositcd ar i3i buhbling temperature of $130^{\circ}C$ have dielccrric constanr of 150 anti dissipation factor of 0 02 at IOOkFic. I .eakagc wrrent density of films was ahour $1.0{\times}10^{-8}A/cm^2$ at 20kV/cm. 1.eakage current i11amcrc1istic.s of Sli'l' films nras c.ontrolled by I'oole Frcnkel emission Kenianent polariziit~on and mercivc field oi SR\ulcorner' films annealed at $550^{\circ}C$ were $9{\mu}C/cm^2$ and 70kV/cm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.110-118
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• 1992

When CVD-W films deposited on the reactively sputter-deposited TiN(${\circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${\circled2}$), and the furnace-annealed TiN submitate (${\circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${\circled1}>{\circled2}>{\circled3}$ and incubation period of W nucleation is in the order of ${\circled1}{\leq}{\circled2}<{\circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.

• Clean Technology
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• v.28 no.2
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• pp.147-154
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• 2022

Titanate nanotubes (TNTs) were synthesized via alkaline hydrothermal treatment using commercial TiO₂ nanoparticles (P25). The TNTs were prepared at various TiO₂/NaOH ratios, hydrothermal temperatures, and hydrothermal times. The synthesized catalysts were characterized by X-ray diffraction, field-emission scanning electron microscopy, N₂ adsorption-desorption isotherms, field-emission transmission electron microscopy, and ultraviolet-visible spectroscopy. TNTs were generated upon a decrease in the TiO₂/NaOH ratio due to the dissolution of TiO₂ in the alkaline solution and the generation of new Ti-O-Ti bonds to form titanate nanoplates and nanotubes. The hydrothermal treatment temperature and time were important factors for promoting the nucleation and growth of TNTs. The TNT catalyst with the largest surface area (389.32 m² g^-1) was obtained with a TiO₂/NaOH ratio of 0.25, a hydrothermal treatment temperature of 130 ℃, and a hydrothermal treatment time of 36 h. Additionally, we investigated the photocatalytic activity of methyl violet 2B (MV) over the TNT catalysts under UV irradiation and found that the degradation efficiencies of the TNTs were higher than that of P25. Among the TNT catalysts, the TNT catalyst that was hydrothermally synthesized for 36 h (TNT 36 h) exhibited a 96.9% degradation efficiency and a degradation rate constant that was 4.8 times higher than P25 due to its large surface area, which allowed for more contact between the MV molecules and TNT surfaces and facilitated rapid electron transfer. Finally, these results were correlated with the specific surface area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.766-770
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• 2007

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, $0.07Pb(Mn_{1/3}Nb_{2/3})O_3-xPb(Ni_{1/3}Nb_{2/3})O_3-(0.93-x)Pb(Zr,Ti)O_3$ ceramics system were fabricated using $Li_2CO_3-Bi_2O_3-CuO$ sintering aids and the specimens were sintered at $930^{\circ}C$. Thereafter, their piezoelectric and dielectric characteristics were investigated according to the amount of PNN substitution. At 9 mol% PNN substitution, density, electromechanical coupling factor ($k_p$), dielectric constant, mechanical quality factor ($Q_m$) and piezoelectric constant ($d_{33}$) showed the optimum value of $7.86g/cm^3$, 0.60, 1640, 1323 and 387 pC/N, respectively. It is considered that these values are suitable for piezoelectric divece application such ad multilayer piezoelectric actuator and ultrasonic vibrator with pure Ag internal electrode.