• Title/Summary/Keyword: $TiO_2-_xN_x$

Search Result 386, Processing Time 0.022 seconds

The Electrical Properties of Mutilayer Chip Capacitor with X7R by Addition of Rare-Earth Ions (Y2O3, Er2O3) using Design of Experiments (실험계획법을 적용한 X7R 적층 칩 커패시터의 희토류(Y2O3, Er2O3) 첨가에 따른 전기적 특성)

  • Yoon, Jung-Rag;Moon, Hwan;Lee, Heun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.23 no.3
    • /
    • pp.216-221
    • /
    • 2010
  • Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.

OBSERV ATION OF MICRO-STRUCTURE AND OPTICAL PROPERTISE OF TITANIUM DIOXIDE THIN FILMS USING OPTICAL MMEHODS

  • Kim, S.Y.;Kim, H.J.
    • Journal of the Korean institute of surface engineering
    • /
    • v.29 no.6
    • /
    • pp.788-796
    • /
    • 1996
  • $TiO_2$ films prepared by RF magnetron sputtering, electron beam evaporation, ion assisted deposition (IAD) and sol-gel method are prepared on c-Si substrate and vitreous silica substrate respectively. From the transmission spectra of $TiO_2$ films on vitreous silica substrate in the spectral region from 190 nm to 900 nm, k($\lambda$) of $TiO_2$ is obtained. Using k($\lambda$) in the interband transition region the coefficients of the quantum mechanical dispersion relation of an amorphous $TiO_2$ and hence n($\lambda$) including the optically opaque region of above fundamental transition energy are obtained. The spectroscopic ellipsometry spectra of $TiO_2$ films in the spectral region of 1.5-5.0eV are model analyzed to get the film packing density variation versus i) substrate material, ii) film thickness and iii) film growth technique. The complex refractive index change of these $TiO_2$ films versus water condensation is also studied. Film micro-structures by SE modelling results are compared with those by atomic force microscopy images and X-ray diffraction data.

  • PDF

Dielectric and Piezoelectric Properties of BNT-PNN-PZT system Ceramics (BNT-PNN-PZT계 세라믹스의 유전 및 압전특성에 관한 연구)

  • 유주현;홍재일;임인호;정희승;윤현상;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1995.11a
    • /
    • pp.44-47
    • /
    • 1995
  • In this study, dielectric and piezoelectric properties of 0.4[0.1Bi(Ni$\_$1/2/Ti$\_$1/2/)O$_3$0.9Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$]-0.6(PbZr$\_$y/Ti$\_$1-y/)O$_3$ceramics with Zr/Ti ratio were observed. As a results, structure of the ceramics with ZrO$_2$(y) 0.425 and 0.45 was MPB. Electromechanical coupling coefficients k$\_$p/, k$\_$31/ of the BN$\_$162/ specimen were 57.2%, 35.6% and piezoelectric constants d$\_$33/, d$\_$31/ were 720, 298[x10$\_$-12/C/N).

  • PDF

Dielectric and Piezoelectric Properties of PMW-PNN-PZT System Ceramics (PMW-PNN-PZT계 세라믹스의 유전및 압전특성)

  • 윤광희;류주현;윤현상;박창엽
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.13 no.3
    • /
    • pp.214-219
    • /
    • 2000
  • In this paper the structural dielectric and piezoelectric properties of Pb[(M $g_{1}$2// $W_{1}$2/)$_{x}$-(N $i_{1}$3//N $b_{2}$3/)$_{0.15-x-(Zr_{0.5})}$ $Ti_{0.5}$)$_{0.85}$$O_3$ (x=0.0~0.10) ceramic were investigated with the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$. According to the substitution of Pb(M $g_{1}$2//W/1/2/) $O_3$ curie temperatures were slightly decrease due to the decrease of the tetrag-onality of crystal structure and coercive fields were decreased. Up to the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ 3mol%,remnant polarization dielectric constant piezoelectric constant were increased. Dielectric constant and electro-mechanical coupling factor( $k_{p}$, $k_{31}$ ) were appeared the highest value of 2230, 0.64, and 0.38 and piezoelectric constant( $d_{33}$ , $d_{31}$ ) was the largest value of 418, 202($\times$10$^{-12}$ /C/N), respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/N) respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ was 3mol%.s 3mol%.%.

  • PDF

DFabrication of $GdAlO_3$ Buffer Layers by Sol-Gel Processing (졸-겔법에 의한 $GdAlO_3$ 버퍼층의 제조)

  • Bang, Jae-Cheol
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.7 no.5
    • /
    • pp.801-804
    • /
    • 2006
  • [ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

  • PDF

HTS Josephson Junctions with Deionized Water Treated Interface (증류수 계면처리를 이용한 고온초전도체 죠셉슨 접합 제작)

  • Moon, S.H.;Park, W.K.;Kye, J.I.;Park, J.D.;Oh, B.
    • Progress in Superconductivity
    • /
    • v.2 no.2
    • /
    • pp.76-80
    • /
    • 2001
  • We have fabricated YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) ramp-edge Josephson junctions by modifying ramp edges of the base electrodes without depositing any artificial barrier layer. YBa$_2$Cu$_3$O/7-x//SrTiO$_3$ (YBCO/STO) films were deposited on SrTiO$_3$(100) by on-axis KrF laser deposition. After patterning the bottom YBCO/STO layer, the ramp edge was cleaned by ion-beam and then reacted with deionized water under various conditions prior to the deposition of counter-electrode layers. The top YBCO/STO layer was deposited and patterned by photolithography and ion milling. We measured current-voltage (I-V) characteristics, magnetic field modulation of the critical current at 77 K. Some showed resistively shunted junction (RSJ)-type I-V characteristics, while others exhibited flux-flow behaviors, depending on the dipping time of the ramp edge in deionized water. Junctions fabricated using optimized conditions showed fairly uniform distribution of junction parameters such as I$_{c}$R$_{n}$ values, which were about 0.16 mV at 77 K with 1$\sigma$~ 24%. We made a dc SQUID with the same deionized water treated junctions, and it showed the sinusoidal modulation under applied magnetic field at 77 K. 77 K.

  • PDF

Synthesis of the BaTiO$_3$ Powders by the Glyscine-Nitrate Process and Its Properties (Part I) (Glycine-Nitrate 법에 의한 BaTiO$_3$ 분말의 합성 및 그 특성(Part I))

  • 박지애;김구대;이홍림;이동아
    • Journal of the Korean Ceramic Society
    • /
    • v.35 no.8
    • /
    • pp.857-863
    • /
    • 1998
  • The BaTiO3 powders extensively used as MLCC (Multilayer ceramic capacitor) in electronic ceramic in-dustry were synthesized by GNP (Glycine-Nitrate process) The powders were prepared using carbonate and alkoxide as starting materials and nitric acid was used as a solvent for starting materials as well as an oxidant for combustion. The BaTiO3 powders were synthesized using different amounts of glycine as a fuel for combustion. The characteristics of synthesized powders were examined with helium pycnometer X-ray diffraction(XRD) Brunauer-Emmett-Teller with N2 adsorption and scanning electron microscopy(SEM). It was found that single phase BaTiO3 could be formed when the as-synthesized powders were heat-treated at 100$0^{\circ}C$ When the glycine/cation molar ratio was 1,2 specific surface area was 24m2/g

  • PDF

Silicide Formation of Atomic Layer Deposition Co Using Ti and Ru Capping Layer

  • Yoon, Jae-Hong;Lee, Han-Bo-Ram;Gu, Gil-Ho;Park, Chan-Gyung;Kim, Hyung-Jun
    • Korean Journal of Materials Research
    • /
    • v.22 no.4
    • /
    • pp.202-206
    • /
    • 2012
  • $CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

The Effect of Nb-doped TiO2 Coating for Improving Stability of NiCrAl Alloy Foam (NiCrAl 합금 폼의 안정성 향상을 위해 코팅된 Nb-doped TiO2의 효과)

  • Jo, Hyun-Gi;Shin, Dong-Yo;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
    • /
    • v.29 no.5
    • /
    • pp.328-335
    • /
    • 2019
  • Nb-doped $TiO_2$(NTO) coated NiCrAl alloy foam for hydrogen production is prepared using ultrasonic spray pyrolysis deposition(USPD) method. To optimize the size and distribution of NTO particles based on good physical and chemical stability, we synthesize particles by adjusting the weight ratio of the Nb precursor solution(5 wt%, 10 wt% and 15 wt%). The morphological, chemical bonding, and structural properties of the NTO coated NiCrAl alloy foam are investigated by X-ray diffraction(XRD), X-ray photo-electron spectroscopy(XPS), and Field-Emission Scanning Electron Microscopy(FESEM). As a result, the samples of controlled Nb weight ratio exhibit a common diffraction pattern at ${\sim}25.3^{\circ}$, corresponding to the(101) plane, and have chemical bonding(O-Nb=O) at 534 eV. The NTO particles with the optimum weight ratio of N (10 wt%) show a uniform distribution with a size of ~18.2-21.0 nm. In addition, they exhibit the highest corrosion resistance even in the electrochemical stability estimation. As a result, the introduction of NTO coated NiCrAl alloy foam by USPD improves the chemical stability of the NiCrAl alloy foam by protecting the direct electrochemical reaction between the foam and the electrolyte. Thus, the optimized NTO coating can be proposed for excellent protection of NiCrAl alloy foam for hydrocarbon-based steam methane reforming(SMR).

The Piezoelectric and Dielectric Properties of PZT-PMN Piezoelectric Ceramics (PZT-PMN 압전 세라믹의 압전 및 유전 특성)

  • Lee, J.S.;Lee, Y.H.;Chae, H.I.;Jeong, S.H.;Lim, K.J.
    • Proceedings of the KIEE Conference
    • /
    • 2001.07c
    • /
    • pp.1439-1441
    • /
    • 2001
  • In this paper, the piezoelectric and dielectric properties as a function of x and r in $yPbZr_xTi_{1-x}O_3-(1-y)Pb(Mn_{1/3}Nb_{2/3})O_3$ piezoelectric ceramics is investigated. As a results, when y is 0.95 and x is 0.505, electromechanical coupling factor($k_p$), permittivity(${{\varepsilon}_{33}}^T/{\varepsilon}_0$), piezoelectric strain constant($d_{33}$) and mechanical quality factor($Q_m$) are 58[%], 1520, 272 [pC/N] and 1550, respectively. From XRD analysis, when x is 0.505, it is MPB which present rhombohedral and tetragonal phase in same quantity. Also, From SEM observation. when sintering temperature is 1150[$^{\circ}C$], grain size is about 2 [${\mu}m$]. As y decreases, piezoelectric and dielectric properties and curie temperature decreases, but mechanical quality factor and sintering temperature increases.

  • PDF