• Korean Journal of Materials Research
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• v.20 no.8
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• pp.429-433
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• 2010

In this study, activated carbon (AC) as a carbon source was modified with different concentrations of cobalt chloride ($CoCl_2$) to prepare a Co-AC composite, and it was used for the preparation of Co-AC/$TiO_2$ composites with titanium oxysulfate (TOS) as the titanium precursor. The physicochemical properties of the prepared Co-AC/$TiO_2$ composites were characterized by $N_2$ adsorption at 77 K, X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis. The photocatalytic treatments of organic dyes were examined under an irradiation of visible light with different irradiation times. $N_2$ adsorption data showed that the composites had decreased surface area compared with the pristine AC, which was $389\;m^2/g$. From the XRD results, the Co-AC/$TiO_2$ composites contained a mixturephase structuresof anatase and rutile, but a cobalt oxide phase was not detected in the XRD pattern. The EDX results of the Co-AC/$TiO_2$ composites confirmed the presence of various elements, namely, C, O, Ti, and Co. Subsequently, the decomposition of methylene orange (MO, $C_{14}H_{14}N_3NaO_3S$) and rhodamine B (Rh.B, $C_{28}H_{31}ClN_2O_3$) in an aqueous solution, respectively, showed the combined effects of an adsorption effect by AC and the photo degradation effect by $TiO_2$. Especially, the Co particles in the Co-AC/$TiO_2$ composites could enhance the photo degradation behaviors of $TiO_2$ under visible light.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.604-610
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• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.984-989
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• 1998

The ($Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. All SCT thin films had (111) preferred orientation. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1001-1004
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• 2001

The (Sr$_{l-x}$Ca$_{x}$)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased -with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increases.ses.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1456-1458
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• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

• Journal of the Korean Chemical Society
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• v.20 no.5
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• pp.323-332
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• 1976

The x or $x^0+x'$ values of the nonstoichiometric chemical formula $TiO_{2-x}$ or $Ti_{2-(x^0+x')}$ have been measured by a specially made magnetic quartz microbalance in a temperature range from 600 to $1300^{\circ}C$ under oxygen pressures of $1{\times}10^{-6} to 1 atm. The standard x or $x^0$ value of the rutile is 0.00148. The x values $under_xoxygen$ pressure of 1 atm decrease with temperatures and then the stoichiometric rutile (or x = 0) is formed at $1130^{\circ}C$. The x values varied between 0.00148 and 0.01719 at a temperature range from 600 to $1300^{\circ}C$ under $1{\times}10^{-9}{\sim}1{\times}10^{-2}$ atm oxygen pressures. The enthalpies of formation of the nonstoichiometric rutile, $H_f$, varied between 21.05 and 29.97 Kcal/mole under the above conditions. The 1/n values calculated from the plots of log X' vs. log $Po_2$ are -{\frac{1}{2}}{\sim}-{\frac{1}{4}} under low oxygen pressure range of $1{\times}10^{-6}\;to\;1{\times}10^{-4}$ atm. Many physical properties of the titanium dioxide, such as the stability of the rutile, Electrical conductivity, catalytic activity and defects, can be explained through the x values and the thermodynamic data calculated from the temperature and oxygen pressure dependences of the x' values.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.207-210
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• 2014

$TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.215-218
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• 1994

Dielectric properties of $(Sr_{l-x}{\cdot}Ca_x)_mTiO_3+0.006Nb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.996$N_2$) were painted on the surface with CuO paste, and then annealed at $1100^{\circ}C$ for 2hr. Grain size increased with increasing substitutional contents of Ca up to 15[mol%], but decreased with further substitution. In the specimens with $10{\sim}15[mol%]$ of Ca and m=1, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss($tan{\delta}[%]$) <0.3[%] and capacitance change rate with temperature <${\pm}10[%]$, respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over $10^6[Hz]$.

• Journal of Powder Materials
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• v.5 no.2
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• pp.98-110
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• 1998

$Ti_{52}Al_{48}$ and $(Ti_{52}Al_{48})_{100-x}B_x(x=0.5, 2, 5)$ alloys have been Produced by mechanical milling in an attritor mill using prealloyed powders. Microstructure of binary $Ti_{52}Al_{48}$ powders consists of grains of hexagonal phase whose structure is very close to $Ti_2Al$. $(Ti_{52}Al_{48})_{95}B_5$ powders contains TiB2 in addition to matrix grains of hexagonal phase. The grain sizes in the as-milled powders of both alloys are nanocrystalline. The mechanically alloyed powders were consolidated by vacuum hot pressing (VHP) at 100$0^{\circ}C$ for 2 hours, resulting in a material which is fully dense. Microstructure of consolidated binary alloy consists of $\gamma$-TiAl phase with dispersions of $Ti_2AlN$ and $A1_2O_3$ phases located along the grain boundaries. Binary alloy shows a significant coarsening in grain and dispersoid sizes. On the other hand, microstructure of B containing alloy consists of $\gamma$-TiAl grains with fine dispersions of $TiB_2$ within the grains and shows the minimal coarsening during annealing. The vacuum hot pressed billets were subjected to various heat treatments, and the mechanical properties were measured by compression testing at room temperature. Mechanically alloyed materials show much better combinations of strength and fracture strain compared with the ingot-cast TiAl, indicating the effectiveness of mechanical alloying in improving the mechanical properties.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.