• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.325-325
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• 2008

스크린 프린팅에 의한 압전 후막은 MEMS 공정을 이용하여 마이크로 펌프, 마이크로 벨브, 마이크로 센서, 마이크로 로봇 등 여러 초소형 기계부품에 응용되고 있으며, Sol-Gel, PLD를 이용해 증착된 막 등에 비해 수십${\mu}m$의 비교적 두꺼운 막을 형성시킬 수 있는 장점을 가지고 있다. 그러나 실리콘 기판을 사용하여 스크린 프린팅으로 형성된 압전 후막의 경우, 공정상 바인더를 연소시키는 과정을 거치게 되므로, 밀집된(Dense) 구조를 가지는 막을 만들기가 어렵다. 이로 인해 스크린 프린팅에 의한 후막은 전기적 특성 및 기계적 특성이 떨어지는 경향이 있다. 본 연구에서는 스크린 프린팅에 의한 압전 후막의 밀집된 구조 및 특성을 향상시키기 위해 0.01Pb$(Mg_{1/2}W_{1/2})$O3-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3$의 powder와 Attrition 밀링 처리된 powder를 비율별로 혼합하여 입자의 크기를 변화시켜 막의 충진 밀도를 향상시켰으며, 열처리 효과를 극대화시키기 위해 RTA(Rapidly Thermal Annealing)를 통해 열처리 하였다. Attrition 밀링에 의한 파우더를 각각 비율별로 100%, 50%, 25%로 혼합하여 만든 압전 세라믹 페이스트는 P-type(100)Si Wafer sample 위에 $1{\mu}m$의 하부전극용($1100^{\circ}C$) Ag 전극을 screen print하여 소결했다. 그리고 다시 전극이 형성된 Si wafer 위에 스크린 프린팅하고, 건조 한 후 RTA로 300초 동안 열처리 한 결과 밀집된 구조를 가지는 압전 후막을 제작 수 있었다.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1803-1805
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• 1999

The thermal expansion coefficient of the titania-fused silica glass$(TiO_2-SiO_2)$ called KLR-1.1 is known to $0{\pm}0.03$ ppm/K, while that of normal fused-silica glasses is about +0.5 ppm/K at room temperature. To analysis the dielectric properties of the KLR-1.1, the sample with diameter of 30 mm and thinkness of 1 mm is covered with gold film. Its relative permittivity and dissipation factor of KLR-1.1 is evaluated to $4.011{\pm}0.012(1\sigma)$ and $(4.86{\pm}0.02){\times}10^{-4}(1{\sigma})$ at 1 kHz respectively. The measurement techniques used and results are more discussed in this paper.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.905-911
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• 1992

Model equations for the gas permeation through a ceramic composite membrane were derived for examining the existence of crack, the reproducibility, and the microstructural properties of composite membranes. From the results of analyzing the nitrogen permeability data through alumina-tube supported TiO2 and SiO2 composite membranes, the extent of cracking, and the formation and structure of membrane top-layers were modelled. It was proved that the crack-free and reproducible composite membranes could be easily prepared only by the pore-filled coating within pores of the support in the sol-gel coating process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.4
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• pp.136-142
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• 2020

Crystallization of zinc crystalline glaze requires demanding conditions such as the formation of a nucleating agent and the amount of nucleating agent, and growth of crystalline. Zinc crystalline glaze is hard to utilize in the industry because of its narrow range of the firing temperature, and the crystallization's dependency on the quality of zinc. Stimulation of zinc crystallization and formation of frit enable zinc crystalline glaze to be reconstituted in a various range of firing schedules, leading to the development of a competitive industrial glaze.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.341-344
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• 2017

Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable of obtaining both color image and depth information at the same time. The combination of light filters applicable to the 3D image sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such as IR pass filters and color filters. The IR cut filters were fabricated by inorganic $SiO_2/TiO_2$ multilayered thin-film deposition using RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organic solvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible with the complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined with conventional color filters are considered successfully applicable to 3D image sensors.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2018.05a
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• pp.193-194
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• 2018

Tn this present study, the superhydrophobic surface was developed on the cement mortar surface by using water repellent materials. For better superhydropohicity, it was developed by using silane as binder and which was enriched with filler materials of SiO₂ and TiO₂ nanomaterials. Those nanomaterials enriched with silanes were admixed in cement mortar during casting time and another was coated on the cement mortar surface. The water repellent properties of spray coated and admixed cement mortars were evaluated by measuring the contact angle which was compared with normal cement mortar.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.70-81
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• 1998

Fiber-Fabry-Perot (FFP) tunable filters, the essential component of WDM transmission, were designed, fabricated and characterized. Multi-layered thin film mirrors that consists of an optical collimater's corss section as a substrate and TiO$_{2}$SiO$_{2}$ alternating multi-layered films as a filter wer designed by means of the transfer matrix method. Fabricated mirrors showed the high reflectivity over around 98% as expected. After fabricating the tuneable filters using PZT, we measured FSR, FWHM, finesse , crosstalk and insertion loss, confirming that the built devices satisfied the optical filter's specifications required in the SEDM transmission systems.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.40.1-40.1
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• 2011

TZM합금은 융점이 높은 Mo 기지에 미세한 (Zr,Ti)C의 석출물이 분산되어 있어 고온에서 다양한 부품에 응용가능하다. 하지만, TZM합금이 대기중 고온에 노출될 경우, 초기 산화물이며 약 $600^{\circ}C$부터 기화가 시작되는 $MoO_3$상이 형성됨으로써 물성에 치명적인 영향을 미친다. 이러한 산화거동을 막기 위하여 표면보호 코팅을 필요로 한다. 본 연구에서는 복잡한 형상과 대량생산이 가능하며 표면 코팅층과 모재의 접합성이 가장 강하다고 알려진 확산코팅법을 이용하여 Si을 TZM 합금에 코팅하였으며, 코팅층의 형성 속도론을 이해하기 위하여 온도별 및 시간별로 코팅을 수행하여 시간과 온도에 따른 코팅층의 형성 기구를 고찰하고자 하였다. Si의 확산코팅결과, $MoSi_2$층은 $1350^{\circ}C$에서 산화시에 두께가 감소하였으며, $Mo_5Si_3$상은 두께가 성장하였다. 코팅층의 확산거동을 속도론적 분석을 통하여 규명하고 논의하고자 한다.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.2
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• pp.83-100
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• 2022

The Zhenzigou Pb-Zn deposit, which is one of the largest Pb-Zn deposit in the northeast of China, is located at the Qingchengzi mineral field in Jiao Liao Ji belt. The geology of this deposit consists of Archean granulite, Paleoproterozoinc migmatitic granite, Paleo-Mesoproterozoic sodic granite, Paleoproterozoic Liaohe group, Mesozoic diorite and Mesozoic monzoritic granite. The Zhenzigou deposit which is a strata bound SEDEX or SEDEX type deposit occurs as layer ore and vein ore in Langzishan formation and Dashiqiao formation of the Paleoproterozoic Liaohe group. White mica from this deposit are occured only in layer ore and are classified four type (Type I : weak alteration (clastic dolomitic marble), Type II : strong alteration (dolomitic clastic rock), Type III : layer ore (dolomitic clastic rock), Type IV : layer ore (clastic dolomitic marble)). Type I white mica in weak alteration zone is associated with dolomite that is formed by dolomitization of hydrothermal metasomatism. Type II white mica in strong alteration zone is associated with dolomite, ankerite, quartz and alteration of K-feldspar by hydrothermal metasomatism. Type III white mica in layer ore is associated with dolomite, ankerite, calcite, quartz and alteration of K-feldspar by hydrothermal metasomatism. And type IV white mica in layer ore is associated with dolomite, quartz and alteration of K-feldspar by hydrothermal metasomatism. The structural formulars of white micas are determined to be (K_0.92-0.80Na_0.01-0.00Ca_0.02-0.01Ba_0.00Sr_0.01-0.00)_0.95-0.83(Al_1.72-1.57Mg_0.33-0.20Fe_0.01-0.00Mn_0.00Ti_0.02-0.00Cr_0.01-0.00V_0.00Sb_0.02-0.00Ni_0.00Co_0.02-0.00)_1.99-1.90(Si_3.40-3.29Al_0.71-0.60)_4.00O₁₀(OH_2.00-1.83F_0.17-0.00)_2.00, (K_1.03-0.84Na_0.03-0.00Ca_0.08-0.00Ba_0.00Sr_0.01-0.00)_1.08-0.85(Al_1.85-1.65Mg_0.20-0.06Fe_0.10-0.03Mn_0.00Ti_0.05-0.00Cr_0.03-0.00V_0.01-0.00Sb_0.02-0.00Ni_0.00Co_0.03-0.00)_1.99-1.93(Si_3.28-2.99Al_1.01-0.72)_4.00O₁₀(OH_1.96-1.90F_0.10-0.04)_2.00, (K_1.06-0.90Na_0.01-0.00Ca_0.01-0.00Ba_0.00Sr_0.02-0.01)_1.10-0.93(Al_1.93-1.64Mg_0.19-0.00Fe_0.12-0.01Mn_0.00Ti_0.01-0.00Cr_0.01-0.00V_0.00Sb_0.00Ni_0.00Co_0.05-0.01)_2.01-1.94(Si_3.32-2.96Al_1.04-0.68)_4.00O₁₀(OH_2.00-1.91F_0.09-0.00)_2.00 and (K_0.91-0.83Na_0.02-0.01Ca_0.02-0.00Ba_0.01-0.00Sr_0.00)_0.93-0.83(Al_1.84-1.67Mg_0.15-0.08Fe_0.07-0.02Mn_0.00Ti_0.04-0.00Cr_0.06-0.00V_0.02-0.00Sb_0.02-0.01Ni_0.00Co_0.00)_2.00-1.92(Si_3.27-3.16Al_0.84-0.73)_4.00O₁₀(OH_1.97-1.88F_0.12-0.03)_2.00, respectively. It indicated that white mica of from the Zhenzigou deposit has less K, Na and Ca, and more Si than theoretical dioctahedral mica. Compositional variations in white mica from the Zhenzigou deposit are caused by phengitic or Tschermark substitution [(Al³⁺)^VI+(Al³⁺)^IV <-> (Fe²⁺ or Mg²⁺)^VI+(Si⁴⁺)^IV] substitution. It means that the Fe in white mica exists as Fe²⁺ and Fe³⁺, but mainly as Fe²⁺. Therefore, white mica from layer ore of the Zhenzigou deposit was formed in the process of remelting and re-precipitation of pre-existed minerals by hydrothermal metasomatism origined metamorphism (greenschist facies) associated with Paleoproterozoic intrusion. And compositional variations in white mica from the Zhenzigou deposit are caused by phengitic or Tschermark substitution [(Al³⁺)^VI+(Al³⁺)^IV <-> (Fe²⁺ or Mg²⁺)^VI+(Si⁴⁺)^IV] substitution during hydrothermal metasomatism depending on wallrock type, alteration degree and ore/gangue mineral occurrence frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$