• 한국세라믹학회지
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• 제28권9호
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• pp.661-666
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were studied by varying cooling rates and additives such as TiO2, SiO2 and Al2O3. The basic composition of the BaTiO3 ceramics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Unlike the additives of SiO2 and Al2O3, an addition of 2 mol% TiO2 to the basic composition was effective to control the grain size of the fired specimens. The room temperature resistivity and the temperature coefficient of resistance for the specimen of this particular compostion were measured as about 102 ohm.cm and 16.5%/$^{\circ}C$, respectively. The observed grain boundary phase of the sample with Al2O3 additive was BaTi3O7, while that of the samples with SiO2 additive was confirmed as BaTiSiO5.

• 한국세라믹학회지
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• 제31권5호
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• pp.552-560
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• 1994

A composite of TiB2-Al2O3 system was successfully prepared from a mixture of TiO2, B2O3, and Al by self-propagating high temperature synthesis (SHS) with a novel characteristic, utilizing the internal oxidation heat of aluminium metal of the mixture, instead of by a conventional technique, externally heating a mixture of Ti, B and Al2O3. From a mixture with B/Ti molar ratio of =2.0, pure two phases of TiB2 and $\alpha$-Al2O3 with good crystallinity and small, uniform sizes were formed. However, when the B/Ti molar ratio of the mixture goes to a value less than 2.0, in addition to the above main minerals, a small smounts of metastable phases such as TiB and Ti3B4 were formed. It was found that about 60%, the optimum green density of compacts gave their highest reaction rate and temperature during SHS process. TiB2-Al2O3 system composite with B/Ti molar ratio of =2.0 could be pressurelessly sintered even at 190$0^{\circ}C$ under Ar gas flows without any addition of sintering aids, showing their good properties such as 91.2% in relative density, 2750 kgf/$\textrm{mm}^2$ in Vickers hardness and 2620 kgf/$\textrm{cm}^2$ in flexural strength.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.114-115
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• 2013

$Ti_3AlC_2$ was corroded between 800 and $1100^{\circ}C$ in an Ar-0.2% $SO_2$ gas atmosphere according to the equation: $Ti_3AlC_2+O_2{\rightarrow}rutile-TiO_2+{\alpha}-Al_2O_3$ + (CO or $CO_2$). The scales that formed on the $Ti_3AlC_2$ were thin and rich in ${\alpha}-Al_2O_3$, whose growth rate was exceedingly slow. The $TiO_2$ was present either as the outermost surface scale or a mixture inside the ${\alpha}-Al_2O_3$-rich scale. In the $Ti_3AlC_2$, the activity and diffusivity of Ti were low, whereas those of Al were high. This was the main reason for the superior corrosion resistance of $Ti_3AlC_2$ over TiAl.

• 한국세라믹학회지
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• 제31권6호
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• pp.651-659
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• 1994

BaTiO3 ceramics were sintered on Al2O3, MgAl2O4, MgO and Mg-, Ca-, Y-stabilized zirconia setters. Then the influence of setters on the microstructure of BaTiO3 ceramics and the stability of setters were investigated by SEM, EDAX and XRD analyses. The microstructure of BaTiO3 ceramics sintered on Al2O3, MgAl2O4, MgO and Mg-PSZ showed large grain growth, but little grain growth on Ce-TZP(Tetragonal Zirconia Policrystal). Mg-PSZ(Partially Stabilized Zirconia), Ca-PSZ, Ce-TZP setters showed extensive phase transformation. Y-TZP and fused Y-SZ (Stabilized Zirconia) setters were stable. The liquid sintering aids of BaTiO3 ceramics accelerate mass transport. The reaction of SrTiO3 in BaTiO3 with ZrO2 resulted in the formation of SrZrO3.

• 한국재료학회지
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• 제17권8호
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• 한국재료학회지
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• 제14권6호
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• pp.394-398
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• 2004

A Ti47Al1.7W-3.7Zr alloy was oxidized between $900^{\circ}C$ and $1050^{\circ}C$, and the oxide scales formed were studied. The oxide scales consisted primarily of an outer$TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed ($TiO _2$ + $Al_2$$O_3$) layer. Besides $TiO_2$ and $Al_2$$O_3$, oxidation led to the formation of some $Ti_2$AlN and TiN. Both W and Zr were preferentially segregated below the intermediate $Al_2$$O_3$-rich layer. Tungsten in the oxide scale was present as $WO_3$ and ${Ti}_{x}$$W_{1-x}$, whereas zirconium as monoclic-$ZrO_2$ and tetragonal-$ZrO_2$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.161-161
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• 2012

결정질 TiCrN과 AlSiN 나노층이 교대로 구성하는 나노 다층 TiAlCrSiN 박막은 음극 아크 플라즈마 증착법에 의해 증착되었다. 나노 다층 TiAlCrSiN 박막의 산화특성들은 $600{\sim}1000^{\circ}C$사이에서 대기 중 최대 70시간동안 연구 되었다. 형성된 산화물들은 주로 $Cr_2O_3$, ${\alpha}-Al_2O_3$, $SiO_2$ 그리고 rutile-$TiO_2$들로 구성되었다. 나노 다층 TiAlCrSiN 박막이 산화하는 동안, 가장 바깥쪽의 $TiO_2$층은 Ti 이온의 외부확산에 의해, 외부 $Al_2O_3$층은 Al이온의 외부확산에 의해 형성되었다. 동시에, 내부($Al_2O_3$, $Cr_2O_3$) 혼합층과 가장 안쪽의 $TiO_2$층은 산소이온의 내부확산에 의해 형성되었다.

• 센서학회지
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• 제23권3호
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• pp.207-210
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• 2014

$TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• 한국전기전자재료학회논문지
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• 제30권12호
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• pp.788-793
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• 2017

Electrical behaviors of plasma-sprayed $Al_2O_3-TiO_2$ coatings have been investigated in terms of their $TiO_2$ content. On increasing the $TiO_2$ content from 6 to 30 wt%, the DC electrical conductivity increased by several orders of magnitude. From impedance spectroscopy analysis, the total conductivity of the grains and grain boundaries and their respective activation energies were determined without the electrode effects that could impede ionic transfer. An electron transference number was also estimated, ranging between 6.5% and 7.3% for 13 wt% $TiO_2$ and between 0.4% and 0.7% for 30 wt% $TiO_2$ in the coating. Because of the high electronic contribution to the total conductivity, the $Al_2O_3-TiO_2$ coating could be a new candidate material to obtain superior electrical conductivity as well as corrosion and wear resistances.