• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.339-339
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• 2002

In the RABiTS approach to coated conductor development, successful (both economic and technological) depends on the refinement and optimization of each of three important components: the metal tape substrate, the buffer layer(s), and the HTS layer. Here we will report on the ORNL approach and progress in each of these areas. - Most applications will require metal tapes with low magnetic hysteresis, mechanical strength, and excellent crystalline texture. Some of these requirements are competing. We report on progress in obtaining a good combination of these characteristics on metal alloys of Ni-Cr and Ni-W. - The deposition of appropriate buffer layers is a crucial step. Recently, base research has shown that the presence of a stable sulfur superstructure present on the metal surface is needed for the nucleation and epitaxial growth of vapor-deposited seed buffer layers such as YSZ, CeO$_2$ and SrTiO$_3$. We report on the details and control of this superstructure for nickel tapes, as well as recent results for Cu and Ni-13%Cr. - Processes for deposition of the HTS coating must economically provide large values of the figure-of-merit for conductors, current x length. At ORNL, we have devoted efforts to a precursor/post-annealing approach to YBCO coatings, for which the deposition and reaction steps are separate. We describe motivation for and progress toward developing this approach. - Finally, we address some issues for the implementation of coated conductors in real applications, including the need for texture control and electrical stabilization of the HTS coating.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.2A
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• pp.147-156
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• 2004

This paper presents an implementation and performance analysis of an access channel decoder which exploits a diversity gain due to the independent magnitude of received signals energy at each of antenna elements of a smart antenna BTS (Base-station Transceiver Subsystem) operating in CDMA2000 1X signal environment. Proposed access channel decoder consists of a searcher supporting 4 fingers, Walsh demodulator, and demodulator controller. They have been implemented with 5 of 1 million-gate FPGA's (Field Programmable Gate Array) Altera's APEX EP20K1000EBC652 and TMS320C6203 DSP (digital signal processing). The objective of the proposed access channel decoders is to enhance the data retrieval at co]1-site during the access period, for which the optimal weight vector of the smart antenna BTS is not available. Through experimental tests, we confirmed that the proposed access channel decoder exploitng the diversity technique outperforms the conventional one, which is based on a single antenna channel, in terms of detection probability of access probe, access channel failure probability, and $E_{b/}$ $N_{o}$ in Walsh demodulator.r.r.

• Advances in Energy Research
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• v.5 no.3
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• pp.219-226
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• 2017

Electrochemical double layer capacitors (EDLCs) have received a tremendous interest due to their suitability for diverse applications. They have been fabricated using different carbon based electrodes including activated carbons, single walled/multi walled carbon nano tubes. But, graphite which is one of the natural resources in Sri Lanka has not been given a considerable attention towards using for EDLCs though it is a famous carbon material. On the other hand, EDLCs are well reported with various liquid electrolytes which are associated with numerous drawbacks. Gel polymer electrolytes (GPE) are well known alternative for liquid electrolytes. In this paper, it is reported about an EDLC fabricated with a nano composite polyethylene oxide based GPE and two Sri Lankan graphite based electrodes. The composition of the GPE was [{(10PEO: $NaClO_4$) molar ratio}: 75wt.% PC] : 5 wt.% $TiO_2$. GPE was prepared using the solvent casting method. Two graphite electrodes were prepared by mixing 85% graphite and 15% polyvinylidenefluoride (PVdF) in acetone and casting n fluorine doped tin oxide glass plates. GPE film was sandwiched in between the two graphite electrodes. A non faradaic charge discharge mechanism was observed from the Cyclic Voltammetry study. GPE was stable in the potential windows from (-0.8 V-0.8 V) to (-1.5 V-1.5 V). By increasing the width of the potential window, single electrode specific capacity increased. Impedance plots confirmed the capacitive behavior at low frequency region. Galvanostatic charge discharge test yielded an average discharge capacity of $0.60Fg^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.510-510
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• 2007

Titanate nanotube(TNT)는 높은 비표면적과 우수한 물리화학적 특성을 가지고 있어 광촉매, 수소 저장재료, 태양전지용 전극재료 등에 적용되고 있다. 또한, 티타네이트 나노튜브는 전자 이동이 원활한 구조적 특징을 가지고 있어 리듐 이차전지용 호스트 재료로서 많은 연구가 진행 중이다. 이에 본 연구에서는 저온균일침전법으로 제조한 루틸상 $TiO_2$ 분말에 Lithium chloride를 1~10wt%를 동시에 첨가한 후 10M의 sodium hydroxide 수용액 내에서 수열합성하여 리튬이 도핑된 티타네이트 나노튜브를 제조하였다. 제조된 분말의 입자형상 및 크기는 전자주사 현미경을 이용하여 관찰하였으며, X-선 회절분석을 이용하여 리튬 첨가에 따른 결정상 변화를 관찰하였다. 또한 리튬이 도핑된 티타네이트 나노튜브의 전기화학적 특성 평가를 위해 양극 활물질 : 도전제 : 바인더를 75 : 20 : 5의 비율로 혼합한 후 coin cell을 제조하였고, potentiostat를 이용하여 용량 측정 및 cycle 특성을 실시하였다. 수열 합성법에 의해 형성된 입자는 직경 10nm, 길이 수 ${\mu}m$로 관찰되었으며, X-선 회절 시험 결과 LiO와 같은 이차상은 발견되지 않았다. 측정된 coin cell의 용량은 240mAh/g을 나타내었으나, 싸이클 특성이 빠르게 저하됨을 확인할 수 있었다.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.6-14
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• 1997

The crystal structures of $Sr_{31}K_{30}-X\;(Sr_{31}K_{30}Si_{100}A1_{92}O_{384};\;a=25.169(5) {\AA}$) and $Sr_{8.5}Tl_{75}-X (Sr_{8.5}Tl_{75}Si_{100}A1_{92}O_{384};\;a=25.041(5) {\AA}$) have been determined by single-crystal X-ray diffraction techniques in the cubic space group $\=F{d3}\;at\;21(1)^{\circ}C$. Each crystal was prepared by ion exchange in a flowing stream of aqueous $Sr(ClO_4)_2\;and\;(K\;or\;T1)NO_3$ whose mole ratio was 1 : 5 for five days. Vacuum dehydration was done at $360^{\circ}C$ for 2d. Their structures were refined to the final error indices $R_1=0.072\;and\;R_w=0.057$ with 293 reflections, and $R_1= 0.058\;and\;R_w=0.044$ with 351 reflections, for which $I>2{\sigma}(I)$, respectively. In dehydrated $Sr_{31}K_{30}-X,\;all\;Sr^{2+}$ ions and $K^+$ ions are located at five different crystallographic sites. Six-teen $Sr^{2+}$ ions per unit cell are at the centers of the double six-rings (site I), filling that position. The remaining 15 $Sr^{2+}$ ions and 17 $K^+$ ions fill site II in the supercage. These $Sr^{2+}$ and $K^+$ ions are recessed ca $0.45{\AA}\;and\;1.06{\AA}$ into the supercage, respectively, from the plane of three oxygens to which each is bound. ($Sr-O=2.45(1){\AA}\;and\;K-O=2.64(1){\AA}$) Eight $K^+$ ons occupy site III'($K-O=3.09(7){\AA}\;and\;3.11(10){\AA}$) and the remaining five $K^+$ ions occupy another site III'($K-O=2.88(7){\AA}\;and\;2.76(7){\AA}$). In $Sr_{8.5}Tl_{75}-X,\;Sr^{2+}\;and\;Tl^+$ ions also occupy five different crystallographic sites. About 8.5 $Sr^{2+}$ ions are at site I. Fifteen $Tl^+$ ions are at site I' in the sodalite cavities on threefold axes opposite double six-rings: each is $1.68{\AA}$ from the plane of its three oxygens ($T1-O=2.70(2){\AA}$). Together these fill the double six-rings. Another 32 $Tl^+$ ions fill site II opposite single six-rings in the supercage, each being $1.48{\AA}$ from the plane of three oxygens ($T1-O=2.70(1){\AA}$). About 18 $Tl^+$ ions occupy site III in the supercage ($T1-O=2.86(2){\AA}$), and the remaining 10 are found at site III' in the supercage ($T1-O=2.96(4){\AA}$).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Membrane Journal
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• v.32 no.3
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• pp.181-190
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• 2022

Membrane separation provides various advantages including cost effectiveness and high efficiency over traditional wastewater treatment methods such as flocculation and adsorption. However, the effectiveness of membrane separation greatly declines due to membrane fouling, where pollutants are accumulated on the membrane surface. Among different groups of membranes, ceramic membranes can provide good antifouling properties due to its hydrophilicity and chemical stability. In addition, composite membranes such as graphene oxide modified membranes can help prevent membrane fouling. Recently, hybrid photocatalytic membranes have been proposed as a solution to prevent membrane fouling and provide synergetic effects. Membrane separation can solve the disadvantages of photocatalytic oxidation such as low reutilization rate, while photocatalytic oxidation can help reduce membrane fouling.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.353-353
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• 2014

본 연구에서는 Sputter를 이용하여 Room Temp.에서 증착된 NbOx 박막의 열처리에 따른 결정도를 분석하고, 이러한 결정도의 변화가 Metal Insulator Transition특성에 의한 Threshold switching에 어떠한 영향을 미치는 지에 대하여 연구하였다. NbOx 박막의 threshold switching 특성 분석을 위해, 1.4um의 TiN 위에 15nm의 NbOx를 증착하고 Top Electrode로 Pt를 증착하여 측정하였다. 증착된 NbOx는 Nb metal target으로 Reactive Sputter를 이용하여 Room Temp.에서 증착하였으며, 조성은 Partial Oxygen Pressure를 이용하여 조절하였다. 증착된 박막의 결정도는 TEM 및 XRD를 통하여 분석하였고 조성은 XPS를 이용하여 분석하였다. Sputter로 NbOx 증착 시 Partial Oxygen Pressure에 따른 조성을 XPS로 확인한 결과, Partial Oxygen Pressure 2%에서 NbOx의 조성을, 5%이상일 경우, Nb2O5의 조성을 가지는 것으로 확인되었다. Partial Oxygen Pressure 2%에서 증착한 NbOx 박막의 열처리에 따른 결정도를 분석한 결과, As-Dep상태에서는 amorphous상태였다가 600'C이상으로 1분간 열처리를 하였을 때 NbOx의 결정도가 증가함을 확인하였다. I-V 특성 측정 결과, 열처리 온도가 증가함에 따라 initial current가 점진적으로 증가하는 경향을 보이는데, 이는 열처리 시 amorphous상에서 poly-crystalline으로 미세구조의 변화가 일어나면서 grain boundary가 생성되며 생성된 grain boundary를 통해 leakage current가 증가하는 것으로 추측된다. 또한, 결정도가 증가함에 따라 electro-forming voltage가 감소하는 경향을 보이며 안정된 threshold switching 특성을 보이고 있다. 특히, 700'C 1분간 열처리 시에는 electro-forming 과정이 없이 threshold switching이 나타나는 현상이 관찰되었다. 이로 미루어 보아, threshold switching에서 나타나는 forming 현상은 local joule heating에 의해 박막이 결정화 되는 과정으로 추측된다. 결론적으로, 박막의 결정도가 initial current 및 Threshold switching 특성에 큰 영향을 미치는 것으로 예상된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.127-130
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• 2003

4-bit 강유전체 위상변위기를 이용하여 10 GHz, 상온에서 작동하는 위상배열 안테나를 설계 및 제작하였다. 이 안테나는 빔 스캔을 위하여 전압에 대한 비선형특성을 보이는 강유전체 Bal-xSrxTiO3 (BST)를 기본으로 하는 위상변위기를 이용하였다. 우리는 펄스레이져 증착법으로 MgO (001) 기판위에 걸맞게 증착된 BST 박막을 일반적인 사진공정과 식각법을 이용하여 동일평판형 전극을 가진 위상변위기를 만들었다. 일반적인 동일평판형 강유전체 위상변위기의 경우 연결 전송선로의 임피던스와의 차이로 인해 반사손실과 이로 인한 부가적인 삽입손실이 발생한다. 이런 손실들을 줄이기 위해 입력과 출력 포트에 임피던스 매칭을 하였다. 이렇게 테이퍼링되어 만들어진 동일평판형 위상변위기는 이전의 구조에 비해 반사 손실과 삽입 손실 값에서 각각 약 10, 2 dB 정도씩의 개선을 보였다. 이 구조로 전송선로의 길이를 길게하여 만든 1-bit 강유전체 위상변위기는 10 GHz, 150 V의 전압변화에서 180도의 차등위상변위를 보였으며 최대 삽입손실과 최대 반사손실은 각각 약 10 dB, 20 dB 이다. 안테나 모듈은 4개의 마이크로스트림 패치 안테나와 4개의 강유전체 위상변위기로 이루어졌는데 10 GHz, 150 V의 전압변화에서 약 15도의 빔 스캔을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.