• Korean Journal of Materials Research
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• v.12 no.11
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.425-431
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.130-130
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.58-58
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• 1997

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.3
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• pp.267-273
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• 2016

This study evaluated the mechanical properties and crack-healing abilities of zirconia composite ceramics. The six kinds of specimens used were: partially stabilized zirconia (Z) and five zirconia composite (ZS, ZST1, ZST2, ZST3, and ZST5) with SiC and $TiO_2$. There was not a large difference between the Vickers hardness of the six types of zirconia ceramics. The bending strength of the ZS specimen degraded rapidly, but the zirconia specimens with $TiO_2$ (ZST1, ZST2, ZST3, and ZST5) showed improved strength. Therefore, it was determined that the bending strength is affected by the crystallization, which is due to the addition of SiC and $TiO_2$. From the crack-healing conditions having the highest bending strength, monolithic zirconia retained its cracks, while the specimens of four types with SiC healed their cracks.

• Korean Chemical Engineering Research
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• v.52 no.5
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• pp.667-671
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• 2014

In this study, we suggest a facile method to control conditions of single component independently when preparing consisting two-component metal oxides nanofiber by simply dispersing nanoparticles in precursor solution. The well dispersed $SiO_2$ nanoparticles in $TiO_2$ nanofibers were successfully synthesized through a simple electrospinning process. The as-synthesized nanodfibers were investigated via FE-SEM, XRD and EDS for structural studies, furthermore, the analysis of UV-VIS and photocatalytic activity were carried out for demonstrate the effect of $SiO_2$ nanoparticles dispersed in $TiO_2$ nanofibers. As a result, $TiO_2$ nanofibres dispersed with $SiO_2$ nanoparticles have enhanced photocatalytic activity than that of $TiO_2$ nanofibres only. In this strategy, the introduction of $SiO_2$ nanoparticles in $TiO_2$ nanofibers were attribute to enlarge absorption in the visible region (380~440 nm). Additionally, $Br{\o}nsted$ acid sites generated in each metal oxide of Ti and Si increase OH radicals efficiently as well as it limit recombination loss by holding photogenerated electrons for high efficient photocatalytic activity.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.2 s.39
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• pp.15-19
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• 2006

The resistance switching characteristics of amorphous $SiO_2$ and poly-crystalline $TiO_2$ were investigated. Both films exhibit well defined switching characteristics with low and high resistance states. From I-V curve analyses, it was found that the low resistance states of both films obey an ohmic conduction mechanism and the high resistance states show generation of a Schottky potential barrier. Regarding the mechanism for resistance switching of the binary oxide, it is suggested that the generation and annihilation of potential barriers accounts for the changes to the high resistance state and low resistance state, respectively. The device operation characteristic parameters such as reset and set voltages of $TiO_2$ are distinctly smaller than those of $SiO_2$, indicating that the values are related to the dielectric constant.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.66-66
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• 2011

Anodic titanium dioxide (TiO2) nanotubes are very attractive materials for gas sensors due to its large surface to volume ratios. The most widely known method for fabrication of TiO2 nanotubes is anodic oxidation of metallic Ti foil. Since the remaining Ti substrate is a metallic conductor, TiO2 nanotube arrays on Ti are not appropriate for gas sensor applications. Detachment of the TiO2 nanotube arrays from the Ti Substrate or the formation of electrodes onto the TiO2 nanotube arrays have been used to demonstrate gas sensors based on TiO2 nanotubes. But the sensitivity was much lower than those of TiO2 gas sensors based on conventional TiO2 nanoparticle films. In this study, Ti thin films were deposited onto a SiO2/Si substrate by electron beam evaporation. Samples were anodized in ethylene glycol solution and ammonium fluoride (NH4F) with 0.1wt%, 0.2wt%, 0.3wt% and potentials ranging from 30 to 60V respectively. After anodization, the samples were annealed at $600^{\circ}C$ in air for 1 hours, leading to porous TiO2 films with TiO2 nanotubes. With changing temperature and CO concentration, gas sensor performance of the TiO2 nanotube gas sensors were measured, demonstrating the potential advantages of the porous TiO2 films for gas sensor applications. The details on the fabrication and gas sensing performance of TiO2 nanotube sensors will be presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• Proceedings of the Membrane Society of Korea Conference
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• 1999.04a
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• pp.78-80
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• 1999