• Title/Summary/Keyword: $TiO_2(x_1)$

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Preparation of dielectric Bi4-xLaxTi3O12 (x~2) from K2La2Ti3O10 via exfoliation and restacking routes (박리화와 재적층법을 통한 K2La2Ti3O10부터 유전성 Bi4-xLaxTi3O12(x~2)의 합성)

  • Jeon, A Young;Ko, Jieun;Kim, Jong-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.1
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    • pp.14-19
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    • 2013
  • We have successfully synthesized $Bi_{4-x}La_xTi_3O_{12}$ (x~2) having Aurivillius-type layered perovskite structure from exfoliated layered perovskite oxide of $K_2La_2Ti_3O_{10}$ with Ruddlesden-Popper structure. The reaction between the exfoliated lanthanum titanate nanosheets and BiOCl nanocrystal resulted in the formation of polycrystalline $Bi_{4-x}La_xTi_3O_{12}$ (x~2) after heating above $700^{\circ}C$. Colloidal suspension of the nanosheets could be obtained by intercalating ethylamine (EA) into the protonated lanthanum titanate, $H_2La_2Ti_3O_{10}$, derived from $K_2La_2Ti_3O_{10}$. Transmission electron microscopic (TEM) analysis show that the exfoliated lanthanium titanate nanosheets have a thickness of a few nano meters. According to X-ray diffraction (XRD) analysis, the exfoliated lanthanium titanate was found to be transformed into $Bi_{4-x}La_xTi_3O_{12}$ (x~2) after restacking with BiOCl and subsequent thermal treatment at > $700^{\circ}C$.

Microwave Dielectric Properties of (1-x)ZnWO4-xTiO2 Ceramics ((1-x)ZnWO4-xTiO2 세라믹스의 마이크로파 유전특성)

  • 윤상옥;김대민;심상흥;강기성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.5
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    • pp.397-403
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    • 2003
  • Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

The Microwave Dielectric Properties of $0.96MgTiO_3-0.04SrTiO_3+xLa(0{\sim}1.0wt%)$ Ceramics ($0.96MgTiO_3-0.04SrTiO_3+xLa(0{\sim}1.0wt%)$ 세라믹스의 마이크로파 유전 특성)

  • Park, Bo-Geun;Um, Sung-Soo;Kim, Kang;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.118-120
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    • 2001
  • The $0.96MgTiO_3-0.04SrTiO_3+xLa(0{\sim}1.0wt%)$ ceramics were prepared by conventional mixed oxide method. The structural properties of $0.96MgTiO_3-0.04SrTiO_3+xLa(0{\sim}1.0wt%)$ ceramics with sintering temperature were investigated by the XRD and SEM. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_3$ and ilmenite $MgTiO_3$ structures were coexisted in the $0.96MgTiO_3-0.04SrTiO_3$ ceramics. The second phase of $Sr_{0.5}LaTi_2O_6$ was shown with addition of the $La_2O_3$. The dielectric constant(${\varepsilon}_r$), $Q{\times}f$ value and the temperature coefficient of the $0.96MgTiO_3-0.04SrTiO_3+0.2La$ ceramics were 21. 41, 39991, $-3.3ppm/^{\circ}C$, respectively.

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Microwave Dielectric Properties of the (1-x)MgxSr$TiO_3$(x=0.03~0.04) ceramics ((1-x)MgxSr$TiO_3$(x=0.03~0.04) 세라믹스의 마이크로파 유전특성)

  • 최의선;이문기;류기원;배선기;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.547-550
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    • 2000
  • The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~135$0^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures coexisted in the (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased with addition of SrTiO$_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to the positive value with increasing the SrTiO$_3$. The negative temperature coefficient of resonant frequency of the magnesium titanate was adjusted to near zero at x=0.036, where the dielectric constant, quality factor, and $\tau$$_{f}$ were 20.65, 95120, and +1.3ppm/$^{\circ}C$, respectively. The temperature stability of qualify factor in (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics increased as the amount of MgTiO$_3$./TEX>.

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Mossbauer Study Of $Co{1+x}Fe{2-2x}Ti_xO_4$ ferrite Powders (Mossbauer 분광법에 의한 $Co{1+x}Fe{2-2x}Ti_xO_4$ 페라이트 분말의 연구)

  • 채광표;정성근;김원기;이성호;이영배
    • Journal of the Korean Magnetics Society
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    • v.10 no.5
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    • pp.220-224
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    • 2000
  • Ultra-fine $Co_{1+x}$F $e_{2-}$2x/ $Ti_{x}$ $O_4$ferrite powders have been prepared by the sol-gel method. The crystallographic and magnetic properties of the sample have been investigated by means of x-ray diffraction, Mossbauer spetroscopy and vibrating sample magnetometry. The formation of nano crystallized particles is confirmed. The x-ray diffractions of all samples with various compositions clearly indicate the presence of spinel structure. The Mossbauer spectra could be fitted as the superposition of two sextets due to F $e^{3+}$ A-site and B-site. The IS and QS values nearly constant with substituted Co-Ti contents, whereas $H_{hf}$ of B-site decreases with increasing Co-Ti substitution in $Co_{1+x}$F $e_{2-}$2x/ $Ti_{x}$ $O_4$. The magnetic behaviour of powders shows that the saturation magnetization and the coercivity decrease with increasing x in $Co_{1+x}$F $e_{2-}$2x/ $Ti_{x}$ $O_4$.$.X>.

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Microwave Dielectric properties of $(1-x)La_{2/3}TiO_3-xLaAlO_3$System ($(1-x)La_{2/3}TiO_3-xLaAlO_3$계의 마이크로파 유전 특성)

  • 이경태;박현수;문종하
    • Journal of the Korean Ceramic Society
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    • v.34 no.4
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    • pp.368-372
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    • 1997
  • The microwave dielectric properties of (1-x)La2/3TiO3-xLaAlO3 system in which LaAlO3 having $\varepsilon$r$\geq$90 and positive $\tau$f was investigated. The crystal system of (1-x)La2/3TiO3-xLaAlO3 was pseudo-cubic in the range of 0.1$\leq$x$\leq$0.07. Its lattice constant increased with increasing x in spite that the amount of LaAlO3 containing of smaller Al(0.57 $\AA$) ion than Ti(0.64 $\AA$) increased. As the amount of LaAlO3 increased from x=0.1 to 0.9, the relative dielectric constant ($\varepsilon$r) decreased from 50 to 23 and the temperature coefficient of resonant frequency($\tau$f) decreased from +84 to -50. On the other hand, the value of Q.f0 reached a maximum (148,000 at 7 GHz) at x=0.7, where a rapid increase in the peak intensity of XRD occured, and further increased after prolonged sintering. The microwave dielectric properties of $\varepsilon$r=37, Q.f0=47,000 (at 7 GHz), and $\tau$f=-2 ppm/$^{\circ}C$ were obtained near 0.6La2/3TiO3-0.4LaAlO3 (x=0.4) composition.

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Effect of Sintering Additives and Annealing Atmospheres on the Microwave Dielectric and Sintering Characteristics of $(1-x)CaTiO_3-xLaAlO_3$ System (소결조제와 열처리 분위기가 $(1-x)CaTiO_3-xLaAlO_3$ 계의 소결 및 마이크로파 유전특성에 미치는 영향)

  • 이경태;여동훈;문종하
    • Journal of the Korean Ceramic Society
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    • v.34 no.6
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    • pp.629-635
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    • 1997
  • The effects of the annealing atmospheres(O2, N2) and sintering additives that Bi2O3 is a major composition on the microwave dielectric and sintering propertie of (1-x)CaTiO3-xLaAlO3 system were investigated. The annealing atmospheres and the increase of annealing time after sintering did not affect the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) of (1-x)CaTiO3-xLaAlO3 system. However, the Q.f0 values of (1-x)CaTiO3-xLaAlO3 were very sensitive to annealing atmospheres. As the annealing time increased under O2 atmosphere the Q.f0 values of (1-x)CaTiO3-xLaAlO3 enhanced untill 10 hrs in 0.3$\leq$x$\leq$0.6 region, but degraded over that time. The increasing rate of Q.f0 value increased wth increasing x. On the other hand, as the annealing time increased under N2 atmosphere the Q.f0 values were constant in x$\leq$0.6 region, increased gradually in x$\geq$0.7 region. When 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% as sintering additives were added to (Ca0.5La0.5) (Ti0.5Al0.5)O3 (x=0.5) the sintering temperature of 1$600^{\circ}C$ was lowered to 140$0^{\circ}C$, and the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) were not nearly changed. The addition of 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% to (Ca0.5La0.5)(Ti0.5Al0.5)O3 made the Q.f0 values to be lower about 15% and 34%, respectively.

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The Effect of Ta-substitution on the Bi-O Bonding and the Electrical Properties of $Bi_4$$Ti_3$$O_{12}$ Thin Films ($Bi_4$$Ti_3$$O_{12}$ 박막에서 Bi-O 결합과 전기 물성에 대한 Ta 치환의 영향)

  • 고태경;한규석;윤영섭
    • Journal of the Korean Ceramic Society
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    • v.38 no.6
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    • pp.558-567
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    • 2001
  • 본 연구에서는 알콕사이드를 전구물질로 하는 졸겔공정을 이용하여 Bi 과잉 12 mol%의 조성인 B $i_4$ $Ti_3$ $O_{12}$ 박막과 B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$(x=0.1, 0.2, 0.3) 박막을 제조하였다. XPS 분석에 따르면 Ta 치환 x=0.2에서 Bi 4f의 photoemission 곡선이 낮은 결합에너지로 이동하였고 피크 강도가 감소하는 현상이 관측되었다. 이는 x=0.1과 0.2 사이에서 Bi-O 결합이 길어져 인장상태 하에 있었음을 나타내었다. B $i_4$ $Ti_3$ $O_{12}$(BIT) 박막의 유전상수와 유전손실은 100 kHz에서 340, 0.05이었고, B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$ 박막에서 이들 값은 x=0.1에서 가장 높았으며, 각각 480, 0.13이었다. B $i_4$ $Ti_3$ $O_{12}$ 박막의 잔류분극과 항전계는 1.24$\mu$C/$ extrm{cm}^2$, 31.4 kV/cm 이었으나, Ta 치환 x=0.2에서 이들 값은 각각 19.7$\mu$C/$\textrm{cm}^2$, 49.5 kV/cm 에 이르렀다. 또한, B $i_4$ $Ti_3$ $O_{12}$ 박막의 누설전류 밀도는 ~$10^{-6}$ A/$\textrm{cm}^2$ 정도이었으며, Ta 치환은 누설전류를 감소시켜 Ta 치환 x=0.2 이상에서 BIT 박막에 비해 한 차수 정도 낮아졌다. Ta 치환에 따른 B $i_4$ $Ti_3$ $O_{12}$ 전기 물성에서 변화는 Bi-O 결합에서 관측된 인장상태로의 전이와 연관성이 있었으며, 덧붙여 치환에서 생성된 전자에 의한 정공보상이 이에 영향을 끼쳤다. 정공보상이 이에 영향을 끼쳤다.끼쳤다.

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Characteristics of perovskite-structure Sr(Ti1-xFex)O3 thick film gas sensors (페롭스카이트 구조 Sr(Ti1-xFex)O3 후막 가스센서의 특성)

  • Jin, Guang-Hu;Lee, Woon-Young;Lee, Hyun-Gyu;Park, Jin-Seong
    • Journal of Sensor Science and Technology
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    • v.18 no.6
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    • pp.456-461
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    • 2009
  • Perovskite-structure $Sr(Ti_{1-x}Fe_x)O_3$ thick films, in which x is 0.4 or 0.6, were prepared by normal ceramic process on alumina substrate. Electrical resistance was measured as a function of thermal treatment condition including atmosphere, time, and temperature. The resistance of $Sr(Ti_{1-x}Fe_x)O_3$ films is lower than those of $SrTiO_3$ or $SrFeO_3$ films. The temperature coefficient of resistance over $550^{\circ}C$ was measured to be 0 for the $Sr(Ti_{1-x}Fe_x)O_3$ films after thermal treatment at $1100^{\circ}C$ in air. The sensing property of the films was also measured as a function of temperature and gas such as $O_2$, CO, $CO_2$, NO and $NO_2$. $Sr(Ti_{1-x}Fe_x)O_3$ films showed a good sensing property for $O_2$, but no sensing signal for CO, $CO_2$, NO and $NO_2$.

Application of Layered Perovskites Substituted with Co and Ti as Electrodes in SOFCs (Co 및 Ti가 치환된 Layered perovskite의 SOFC 전극에 대한 적용성 연구)

  • Kim, Chan Gyu;Shin, Tae Ho;Nam, Jung Hyun;Kim, Jung Hyun
    • New & Renewable Energy
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    • v.18 no.2
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    • pp.40-49
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    • 2022
  • In this study, the phase and electrochemical properties of Co and Ti substituted layered perovskites SmBaCo2-xTixO5+d (x=0.5, 0.7, 1.0, 1.1, 1.3, and 1.5) were analyzed, and their application as electrodes in solid oxide fuel cells (SOFCs) were evaluated. After calcination at 1300℃ for 6 h, a single phase was observed for two compositions of the SmBaCo2-xTixO5+d oxide system, SmBaCoTiO5+d (x=1.0) and SmBaCo0.9Ti1.1O5+d (x=1.1). However, the phases of SmBaCoTiO5+d (SBCTO) and SmTiO3 coexisted for compositions with x≥1.3 (Ti content). In contrast, for compositions of x≤0.7, the SmBaCo2O5+d phase was observed instead of the SmTiO3 phase. To evaluate the applicability of these materials as SOFC electrodes, the electrical conductivities were measured under various atmospheres (air, N2, and H2). SBCTO exhibited stable semi-conductor electrical conductivity behavior in an air and N2 atmosphere. However, SBCTO showed insulator behavior at temperatures above 600℃ in a H2 atmosphere. Therefore, SBCTO may only be used as cathode materials. Moreover, SBCTO had an area specific resistance (ASR) value of 0.140 Ω·cm2 at 750℃.