• ETRI Journal
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• 제14권4호
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• pp.217-227
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• 1992

최근 이동통신 및 위성통신 등 마이크로웨이브를 이용하는 통신분야의 시장이 급속히 신장됨에 따라 RF(Radio Frequency) 부품의 산업적 중요성이 부각되고 있다. RF 부품은 크게 능동부품과 필터로 대표되는 수동부품으로 대별되는데, duplexer나 필터는 현재 대부분 마이크로웨이브 세라믹유전체를 사용 제조하고 있다. 본 연구에서는 이들 부품들에 사용가능한 세라믹유전체를 개발하기 위한 연구의 일환으로 BaO-$Sm_2$$O_3$-$TiO_2$계 세라믹의 마이크로웨이브 유전특성과 여기에$La_2\$$O_3$를 첨가한 계인 BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹유전체를 제조하여 마이크로웨이브 유전특성을 살펴보았다. RF 부품에 사용되는 세라믹유전체는 높은 유전율$\varepsilon_r$높은 품질계수 (Q) 및 안정된 온도특성 $\tau_f$ 등의 조건을 충족시켜야한다. 본 연구에서는 유전체의 $\varepsilon_r$ 및 Q의 측정에 디스크형 유전체공진기와 두개의 도체평행판을 사용한 Hakki-Coleman법을 사용하였으며, $\tau_f$는 fixture를 항온조에 넣어서 측정하였다. BaO-$Sm_2O_3-TiO_2$계의 경우 소결온도 $1350^{\circ}C$까지는 $\varepsilon_r$및 Q가 증가하나 그 이상의 소결온도에서는 감소한다. 그리고 $\tau_f$는 $-35_{ppm}/^{\circ}C$에서 소결온도에는 거의 의존하지 않았다. $La_2O_3$를 첨가한BaO-($Sm_1$$-_X$$La_X$$)_2$$O_3$-$TiO_2$ 세라믹의 마이크로웨이브 유전특성은 $La_2O_3$의 첨가량이 많을수록 $\tau_f$값이 음에서 양으로 이동함이 관찰되었으며, x=0.15에서 $\tau_f$가 0이 되어 마이크로웨이브 부품용 마이크로웨이브 세라믹유전체를 얻을 수 있음이 확인되었다.

• Bulletin of the Korean Chemical Society
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• 제19권8호
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• pp.830-835
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• 1998

The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.208-209
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• 2006

Sinterability and microwave dielectric properties of the $Zr1-x(Zn_{1/3}Nb_{2/3})xTiO_4$(x=4, 6) system ceramics have been investigated as functions of zinc-borosilicate(ZBS) glass contents and amount of $Zn_{1/3}Nb_{2/3}O_2$ substitution with a view to applying the composition to LTCC technology. The addition of 25 wt% ZBS glass ensured successful sintering below $925^{\circ}C$. With increasing ZBS glass and $Zn_{1/3}Nb_{2/3}O_2$ contents increased dielectric constant and sinterability but addition ZBS glass decreased the quality factor significantly due to the formation of an excessive liquid and second phases. The sintered $Zr4(Zn_{1/3}Nb_{2/3})6TiO_4$ system ceramics at $925^{\circ}C$ with 25 wt% ZBS glass demonstrated 27.7 in dielectric constant (${\varepsilon}_r$), 3,850 m quality factor($Q{\times}f_0$), and +6 ppm/$^{\circ}C$ in temperature coefficient of resonant frequency($\tau_f$).

• 한국재료학회지
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• 제2권2호
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• pp.151-156
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• 1992

본 연구에서는 $Ba(OH)_2{\cdot}8H_2O,\;Sr(OH)_2{\cdot}8H_2O$ 및 $Ti(i-OC_3H_7)_4$를 사용하여 졸-겔법에 의해 미세한 $(Ba_{1-x}Sr_{x})TiO_3$ 분말을 제조하였다. TEM 관찰, BET 비표면적측정 및 XRD회절도의 분석결과 $700^{\cric}C$에서 하소한 뚠말의 입자크기는 20~40nm이고 입방정상으로 존재하였다. 또한 XRD 회절도고부터 계산된 격자상수 및 (112)피크의 이동으로부터 고용체분말이 형성되었음을 확인할 수 있었다. 제조된 분말에서의 EDAX 분석을 통한 양이온들의 상대적인 비율 및 소결체에 대한 유전상수의 측정결과로부터 제조된 분말에서 양이온들의 분포가 입자단위에서 균질함을 예상할 수 있었다.

• 대한전기학회논문지
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• 제44권7호
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• pp.914-918
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• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.8-11
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• 1988

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.819-821
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• 2002

Photoluminescenc (PL) and low-voltage cathodoluminescence (CL) characteristics of $[xSrTiO_3+(1-x)Li_2TiO_3]:Pr^{3+}$ and $[xSrTiO_3+(1-x)Na_2TiO_3]:Pr^{3+}$ systems were investigated. The red luminescence intensities of these compounds are enhanced remarkably by the incorporation of $Li^+$ or $Na^+$ ion as compared to that of $SrTiO_3:Pr^{3+}$. The enhanced luminescence is speculated to result from both the charge compensation of $Pr^{3+}$ site and oxygen vacancies generated in the lattices by $Li^+$ or $Na^+$ ion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• 한국세라믹학회지
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• 제40권4호
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• pp.328-332
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• 2003

Ceramics of xCaTiO$_3$-(1-x)Li$_{0.5}$Nd$_{0.5}$TiO$_3$(xCT-(1-x)LNT) series have been prepared by the mixed oxide route. Powders were calcined at 110$0^{\circ}C$ ; cylindrical specimens were fired at temperatures in the range 1300-150$0^{\circ}C$. Sintered products were typically 90-95% dense. The microstructures were dominated by angular grains typically 1.3${\mu}{\textrm}{m}$ to 3.5 ${\mu}{\textrm}{m}$ in size. Twinning in the microstructures was analysed using Electron Back Scattered Diffraction (EBSD). Microwave dielectric properties of xCT-(1-x)LNT at 2.1 GHz ($\varepsilon$$_{r}$, Qxf, and $\tau$r) were 170,3800 GHz and 744 ppm/$^{\circ}C$ for pure CaTiO$_3$ and 80,2000 GHz and -240 ppm/$^{\circ}C$ for LNT. The $\tau$r decreases almost linearly from 744 for pure CaTiO$_3$ to -240 for pure LNT.LNT.T.