• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.535-542
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• 1995

The effect of sintering temperature, sintering time and forming pressure on microwave dielectric properties of (Zr1-xSnx)TiO4 ceramics containing 1.0wt% B2O3, 0.3 wt% La2O3 and 1.0wt% NiTa2O6 was investigated using the response surface methodology. The optimum values of processing variables were determined based on the reproducibility. The optimum values of the dielectric constant of >35. Q.f0 of >55000 and $\tau$f=$\pm$5 ppm/$^{\circ}C$ could be obtained when the sample was pressed at 500~600kg/$\textrm{cm}^2$ and sintered at 1500~155$0^{\circ}C$ for 2~3 hrs.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1095-1096
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• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.583-590
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• 1997

The effects of Mn2O3 and Y2O3 additives on the microstructure and dielectric properties of Sr(Zr, Ti)O3 have been investigated. Powders with Sr(Zr1-xTix)O3(0$\leq$x$\leq$0.1) composition were prepared by the conventional solid state processing from commercial TiO2 and precipitation-processed ZrO2. The powders containing sintering additives of Mn2O3 and Y2O3 were compacted and then sintered at 1,55$0^{\circ}C$ for 4 h to get>97% relative density. Mn2O3 suppressed the grain growth and Y2O3 enhanced the density of sintered body. The oxidation state of Mn ions were determined by a chemical wet method and EPR spectroscopy. Mn ions were present as Mn2+ and Mn4+ in SrZrO3, while as Mn3+ and Mn4+ in Ti-substituted Sr(Zr, Ti)O3. With the substitution of Ti, the lattice parameters of SrZrO3 decreased and its dielectric constant increased with remarkable decrease in Q value. The dielectric constant of Sr(Zr, Ti)O3 was in the range of 30 to 40, Q values 1,200~5,400 at 6 GHz and temperature coefficient of resonant frequency -67~100 ppm/K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.186.1-189
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• 2001

Ferroelectric $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (BLT)thin films with various compositions(x=0.65, 0.70, 0.75) were prepared on Pt//Ti/SiO$_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BLT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atomosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70) thin film capacitors with a Pt top electrode showed better ferroelectric properties than other films. At the applied voltage of 5V, the dielectric constant($\varepsilon$$_{r}$), dissipation factor(tan$\delta$),remanent polarization(2Pr), and coercive field(2Ec) of the $Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$ (x=0.70)thin films were about 272.54, 0.059, 32.4 $\mu$C/cm$^2$, 2Ec=119.9kV/cm. Also the capacitor did not show any significant fatigue up to 4.8$\times$10$^{10}$ read/write switching cycles.hing cycles.s.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.73-78
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• 2003

(Ba/sub 1-x/Sr/sub x/)TiO₃ (BST, 0.4< x <0.65) single crystals were successfully grown by the TSSG (Top-Seeded Solution Growth) method, using a commercial [100] SrTiO₃ or as-grown [100] BST single crystals as seed crystals. To obtain the BST single crystals with various compositions x, the Ba/sr molar ratios in the solutions were systematically controlled while the Ti ion content among all cations was fixed at 67 mol%. A linear regression curve between their x values and the molar ratios of Sr/(Ba + Sr) in the solutions could be obtained, which in turn could used to select the initial composition to produce BST crystal with an aimed x value. In addition, the isothermal growth was found more effective for obtaining a compositional uniformity than a slow cooling process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.194-199
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• 2020

By controlling the composition of the metal-oxide nanosheet having a two-dimensional layered crystal structure, material properties and application can be extended. In this study, the composition of the nanosheet could be expanded from pure composition to doping composition by successfully synthesizing the TiO₂ nanosheet doped with Nb. Specifically, the doping composition was designed when synthesizing the layered metal oxide as a starting material (K_0.8Ti_1.73-xNb_xLi_0.27O₄, x = 0, 0.03, 0.07) and chemical exfoliation was performed. By doing this, it was possible to obtain the Nb-doped TiO_y ultrathin nanosheet. The size of the nano sheet was 2 ㎛ or less based on the long length in the x-y direction, and the thickness was about 1 nm. Nb-doping was confirmed by XRD and SEM-EDS analysis.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.51-56
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• 2003

Microwave dielectric properties of the $MgTiO_3-CaTiO_3$ ceramics were investigated for GPS antenna fabrication. (1-X) $MgTiO_3-X CaTiO_3$ ceramics with X=7 mol% sintered at $1400^{\circ}C$ exhibited can be dielectric constant of 20.6, the quality factor of 52,500 and the temperature coefficient of resonant frequency of -1.5 [ppm/$^{\circ}C$]. The results of $0.93MgTiO_3-0.070CaTiO_3$ ceramics with $P_2O_5$/ 0.6 wt% sintered at $1250^{\circ}C$ exhibited can be dielectric constant of 21, the quality factor of 58,000 and the temperature coefficient of resonant frequency of 2.6 [ppm/${\circ}C$]. The size, insertion loss, center frequency and band width of GPS antenna were $20.5{\times}20.5{\times}6[mm]$,-10(dB) and 1575.42(MHz) respectively. The insertion loss, center frequency and band width of the fabricated GPS antenna were -11 (dB), 1579(MHz) and 22(MHz) respectively. The center frequency was higher than design result, but other characteristics of GPS antenna were similar to the results of design result.

• Journal of the Korean Ceramic Society
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• v.39 no.11
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• pp.1017-1022
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• 2002

$(Ba_{1-x}Ca_x)(Ti_{1-y}Zr_y)O_3(BCTZ)$ powders for the Ni-electrode Multilayer Ceramic Capacitor(MLCC) were synthesized via hydrothermal treatment using mixed aqueous solutions of $BaCl_2{\cdot}2H_2O,\Ca(NO_3)2{\cdot}4H_2O,\ ZrOCl_2{\cdot}8H_2O$ and $TiCl_4$. Two component and three component systems were also extensively studied for basic data. BT, CT and BZ powders were crystalline but CZ was determined to be amorphous under the same synthetic condition. In BTZ system, Zr and Ti were completely soluble and Ca would be substituted for Ba up to ∼6 mol% in BCT. The submicron-sized $(Ba_{0.95}Ca_{0.05})(Ti_{0.80}Zr_{0.20})O_3$ powder of the target composition was successfully synthesized at $150{\circ}$ for 12h.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.63-67
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• 2003

Synthesis of $PbLaTiO_{3}$ : Mn powders containing La and Mn was carried out using $PbO,\;TiO_{2},\;La_{2}O_{3}\;and\;MnO_{2}$ as starting materials by hydrothermal method. In the synthesis of single phase $PbLaTiO_{3}$ : Mn powder containing La and Mn, the optimal x value corresponding to La substitution was 0.01 which corresponds to $0.99(Pb_{1-x}La_{2x/3}TiO_{3})+0.01MnO_{2}$. The optimal conditions for the preparation of the powder synthesis were 8 M-KOH solvent of hydrothermal solvent, $270^{\circ}C$ of reaction temperature and 24 hrs of run time. It was found that the synthesized powders had spherical morphology with average particle size of 70 nm and specific surface area of $5.5\;m^{2}/g$.