• 한국원자력학회:학술대회논문집
• /
• 한국원자력학회 1997년도 춘계학술발표회논문집(2)
• /
• pp.195-200
• /
• 1997

핵융합로 증식재용 r-LiAlO$_2$, Li$_2$ZrO$_3$, Li$_2$TiO$_3$ 분말을 자발착화 연소반응법으로 합성하였다. LiAlO$_2$와 달리 Li$_2$ZrO$_3$ 와 Li$_2$TiO$_3$는 가열하는 동안 침전물이 생겼지만 카르복실산기만을 지닌 구연산과 아민기만을 지닌 우레아를 화학정량의 조성으로 혼합한 연료로 쉽게 분말을 합성할 수 있었다. LiAlO$_2$나 Li$_2$TiO$_3$분말은 별도의 하소 공정이필요없이 원하는 결정상이 형성되었으며, Li$_2$ZrO$_3$분말은 Li이 과량인 상이 형성되므로 110$0^{\circ}C$에서 하소하여 원하는 상을 얻었다. 합성된 Li계 산화물 분말은 비표면적 10~17 $m^2$/g으로 약 150 nm정도의 입자크기를 갖는 미세한 입자이었다.

• 한국분말재료학회지
• /
• 제8권1호
• /
• pp.35-41
• /
• 2001

$BaTiO_3$ fine powder was synthesized by hydrothermal process from the mixture of titania-hydroxide($TiO_2{\cdot}xH_2O$) and barium hexa-hydroxide ($Ba(OH)_2{\cdot}8H_2O$) as starting materials. Fine powder(< 100 nm) was made under the reaction conditions of 18$0^{\circ}C$,10 atm, 1.5 hr in autoclave and showed cubic structure. The powders were sintered by a spark plasma sintering technique from 1050~115$0^{\circ}C$ for 5 min. The grains of sample sintered at 110$0^{\circ}C$ were about 0.9${\mu}m$ in average size and showed the mixture of cubic and tetragonal structures.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.324-327
• /
• 2005

An electrophoretic display using $TiO_2$ particles is the most promising candidate because it offers various advantages such as ink-on-paper appearance, good contrast ratio, wide viewing angle, image stability in the off-state and extremely low power consumption. The core technology of electrophoretic display is the dispersion controlling of $TiO_2$ nano particles in nonaqueous solution. To prepare an ink for electronic paper using electrophoretic properties of $TiO_2$ nano particles, cyclohexane with low dielectric constant and transparency, polyethylene for producing polymer coating layer which reduces apparent gravity of $TiO_2$, and $TiO_2$ powders were mixed together by planetary-mill. The zeta-potential value of $TiO_2$ particles in cyclohexane was measured about -40mV, but was measured over -110mV by dispersant attached to polyethylene-coated $TiO_2$ surface. Prepared electronic ink was filled in cross patterned micro-wall with $200{\mu}m$ in width and $40{\mu}m$ in height on ITO glass designed by photolithography. The response time of electronic paper evaluated by mobility of $TiO_2$ particle between micro-walls was measured 0.067sec, but the drift velocity from reflectance wave form during reverse from of electronic ink was measured 0.07cm/sec.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.214-214
• /
• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• 한국세라믹학회지
• /
• 제47권4호
• /
• pp.333-337
• /
• 2010

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
• /
• pp.71-71
• /
• 2003

최근 통신용 전자부품의 소형화, 저가격화, 고기능화의 요구가 점점 더 증대되고 있으며 이를 위해서 기판의 배선밀도를 높이는 것과 개별 부품 또는 모듈의 크기와 무게를 줄이는 것이 절실히 필요하다. 본 연구에서는 저융점의 phosphate계 유리 프릿의 첨가를 통해 LTCC (Low Temperature Co-fired Ceramic) 에 적용 가능한 조성을 개발하고자 하였다. 마이크로파 용 유전재료로서 널리 사용되고있는 BNT (BaO-Nd$_2$O$_3$-TiO$_3$) 계 세라믹스에 저융점 유리 프릿의 양을 10-30wt% 범위로 변화시키면서 900-110$0^{\circ}C$ 범위에서 소결하여 이에 따른 수축률 변화와 상대밀도의 변화를 조사하였다 유리 프릿으로 P$_2$O$_{5}$-ZnO-BaO-Nd$_2$O$_3$ 계, P$_2$O$_{5}$-SnO-ZnO 계 2가지 조성의 유리를 사용하였다 그 결과로 소결체의 상대밀도는 소성온도가 900-110$0^{\circ}C$ 로 증가함에 따라 85-96% 로 증가하였고, 그 수축률은 소결온도 100$0^{\circ}C$ 에서 급격히 증가하였다. 이러한 결과는 저온 동시소성 세라믹 조성의 사용을 위해 좋은 결과가 예상된다.

• 한국세라믹학회지
• /
• 제20권2호
• /
• pp.107-114
• /
• 1983

Formation of Strontium titanate from the products of coprecipitation takes place at 110$0^{\circ}C$ which is 200-30$0^{\circ}C$ lower than that from mechanical mixtures of $SrCO_3$ and $TiO_2$. This is apparently due to the nature of the compounds formed by the reaction of mixtures of aqueous solutions of $SrCl_2$ and $TiCl_4$ with an ammoniacal solution of ammoni-um carbonate and ammonium hydroxide. A procedure is described for preparing strontium titanyl oxalate tetrahydrate in the several mole ratio of $TiCl_4$ to $SrCl_2$. STrontium titanyl oxalates decompose to titanate at elevated temperature. The coprecipitates and the fired specimen were subjected to examined thermal and X-ray analyses and microstruc-ture by SEM.

• 한국산학기술학회논문지
• /
• 제18권10호
• /
• pp.771-776
• /
• 2017

모바일 디스플레이 및 태양전지의 커버글라스에는 반사방지 코팅 및 셀프클리닝과 같은 기능성 코팅이 필요하다. 최근 들어 나방 눈 또는 연꽃 잎과 같은 자연의 기능성 표면을 모사하여 공학적으로 응용하고자하는 많은 연구가 수행되었다. 특히 실리카 나노입자를 이용한 반사방지 기능성 코팅은 빛의 투과를 증가시키며, $TiO_2$ 광촉매 코팅은 셀프클리닝 기능성 필름에 적용되어왔다. 본 연구에서는 $SiO_2/TiO_2$ 나노입자의 박막 코팅에 의한 투명 발수 반사방지 코팅을 sol-gel 공정과 dip-coating 공정으로 글라스 기판 위에 제조하였다. 기능성 코팅의 표면형상 의존성을 원자힘현미경, 접촉각 측정 및 UV-visible 분광광도계 분석으로 조사하였다. 그 결과 $TiO_2$ 나노입자의 코팅은 가시광선 영역에서 투과율을 저하시키지 않고 기판인 슬라이드 글라스와 비슷한 수준의 높은 평균 광 투과율을 나타내었다. 또한 7nm $SiO_2$/7nm $TiO_2$ 나노입자의 이중층 기능성 코팅은 접촉각 $110^{\circ}$의 투명 발수 표면 특성을 나타내었으며, 가시광선 영역에서 기판인 슬라이드 글라스 보다 2.3% 높은 평균 투과율의 향상을 나타내었다.

• 한국세라믹학회지
• /
• 제31권8호
• /
• pp.886-892
• /
• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• Journal of Magnetics
• /
• 제18권1호
• /
• pp.39-42
• /
• 2013

We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.