• Title/Summary/Keyword: $TiO_2$system

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Anti-Reflection Thin Film For Photoelectric Conversion Efficiency Enhanced of Dye-Sensitized Solar Cells (염료감응형 태양전지의 광전변환효율 향상을 위한 무반사 박막)

  • Jung, Haeng-Yun;Ki, Hyun-Chul;Hong, Kyung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.12
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    • pp.814-818
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    • 2016
  • DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.

Low-temperature crystallized BST thin films by excimer laser annealing for embedded RF tunable capacitor

  • Kang, Min-Gyu;Do, Young-Ho;Oh, Seung-Min;Kang, Chong-Yun;Kim, Sang-Sig;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.28-28
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    • 2010
  • This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.

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Geochemistry and Mineralogy of Metapelite and Barium-Vanadium Muscovite from the Ogcheon Supergroup of the Deokpyeong Area, Korea (덕평지역(德平地域)의 옥천누층군(沃川累層群)에 분포(分布)하는 변성이질암(變成泥質岩)과 바륨-바나듐 백운모(白雲母)의 지구화학적(地球化學的) 및 광물학적(鑛物學的) 특성(特性))

  • Lee, Chan Hee;Lee, Hyun Koo
    • Economic and Environmental Geology
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    • v.30 no.1
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    • pp.35-49
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    • 1997
  • The coal formation of the Deokpyeong area are interbedded along metapelites of the Ogcheon Supergroup, which are composed mainly of graphite, quartz, muscovite and associated with small amounts of biotite, chlorite, pyrite and barite. The ratios of $SiO_2/Al_2O_3$, $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ of the coaly metapelite are variable and wide range from 1.80 to 10.21, from 27.8 to 388.8 and from 7.6 to 61.8, respectively. These coal formation were deposited in basin of marine environments, and the REE of these rocks are not influenced with metamorphism and hydrothermal alterations on the basis of $Al_2O_3$ versus La, La against Ce, the ratios of La/Ce (0.19 to 0.99) and Th/U (0.02 to 4.75). These rocks also show much variation in $La_N/Yb_N$ (1.19 to 22.89), Th/Yb (0.14 to 21.43) and La/Th (0.44 to 13.67), and their origin is explained by derivation from a mixture of sedimentary and igneous rocks. The wide range in trace and REE element characteristics as Co/Th (0.12 to 2.78), La/Sc (0.33 to 10.18), Sc/Th (0.57 to 5.73), V/Ni (8 to 2347), Cr/V (0.02 to 0.67) and Ni/Co (1.56 to 32.95) of these coaly metapelites argues for inefficient mixing of the various source lithologies during sedimentation. Deep to pale green barium-vanadium muscovites (vanadium-oellacherite) have been found in this coal formations. Modes of occurrence and grain size of muscovite are heterogeneous, but most of the barium and vanadium-bearing muscovites occur along the boundaries between graphite and quartz grains, ranging from 200 to $350{\mu}m$ in length and from 40 to $60{\mu}m$ in width. Results of X-ray diffraction data of the minerals characterized to be monoclinic system with $a=5.249{\AA}$, $b=8.939{\AA}$, $c=20.924{\AA}$ and ${\beta}=95.894^{\circ}$. Representative chemical formula of the muscovite was $(Na_{0.09}K_{1.44}Ba_{0.46})(Al_{2.75}Ti_{0.07}V_{0.56}Fe_{0.08}Mg_{0.50})(Si_{6.12}Al_{1.88})O_{22}$. The V possibly substitute octahedral Al, and the Ba is coupled substitution of $K^+Si^{4+}=Ba^{2+}Na^+Ca^{2+}$, which compositional ranges of V and Ba are from 0.42 to 0.69 and from 0.34 to 0.56 based on $O_{22}$, respectively. Formation mechanism of the barium-vanadium muscovites in the coaly metapelite is shown that the formed by high pressure and temperature from regional metamorphism origanated during diagenesis at the interface between a basinal brine and organic matter.

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Characteristics of BMN Thin Films Deposited on Various Substrates for Embedded Capacitor Applications (임베디드 커패시터의 응용을 위해 다양한 기판 위에 평가된 BMN 박막의 특성)

  • Ahn, Kyeong-Chan;Kim, Hae-Won;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.4
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    • pp.342-347
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    • 2007
  • $Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).

Evaluation of Ozone Resistance and Anti-Corrosion Performance of Water Treatment Concrete according to Types of Metal Spray Coating (수처리시설용 콘크리트의 금속용사 피막 종류에 따른 내오존성 및 전기화학적 방식 성능 평가)

  • Park, Jin-Ho;Choi, Hyun-Jun;Lee, Han-Seung;Kim, Sang-yeol;Jang, Hyun-O
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.23 no.4
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    • pp.61-68
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    • 2019
  • As the pollution of water resources deteriorates due to industrialization and urbanization, it is difficult to supply clean water through a water treatment method using chlorine. Therefore, the introduction of advanced water treatment facilities using ozone is on the increase. However, epoxy which is used as waterproofing and anticorrosives and stainless steel used in conventional waterproofing and anti-corrosive methods have deteriorated because of the strong oxidizing power of ozone, causing problems such as leaking. Moreover, it even causes the durability degradation of a concrete. Therefore, in this study, metal spraying system was used as the means of constructing a metal panel with excellent ozone resistance and chemical resistance which is an easier method than an existing construction method. Ozone resistance was evaluated in accordance with the type of metal sprayed coatings to develop a finishing method which can prevent the concrete structure of water treatment facilities from deterioration. Furthermore, electrochemical stability in actual sewage treatment plant environment was evaluated. Experimental results showed that Ti has superior ozone resistance after spraying and the electrochemical stability in the sewage treatment plant environment showed that Ti has the highest polarization resistance of $403.83k{\cdot}{\Omega}{\cdot}cm^2$, which ensures high levels of durability.

Structural and Piezoelectric Properties of MnO2-Doped PZT-PSN Ceramics for Ultrasonic Vibrator (초음파 진동자용 MnO2가 Doping된 PZT-PSN 세라믹스의 구조 및 압전 특성)

  • Cha, Yoo-Jeong;Kim, Chang-Il;Kim, Kyoung-Jun;Jeong, Young-Hun;Lee, Young-Jin;Lee, Hai-Gun;Paik, Jong-Hoo
    • Korean Journal of Materials Research
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    • v.19 no.4
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    • pp.198-202
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    • 2009
  • For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

High-Luminous Efficiency Full-Color Emitting $GdVO_4$:Eu, Er, Tm Phosphor Thin Films

  • Minami, Takatsugu;Miyata, Toshihiro;Mochizuki, Yuu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1091-1094
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    • 2004
  • High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

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Preparations and Photovoltaic Properties of Dye-Sensitized Solar Cells Using Polymer Electrolytes (고분자 전해질을 이용한 염료감응형 태양전지의 제작과 광기전 특성)

  • Kim, Mi-Ra;Shin, Won-Suk;Jin, Sung-Ho;Lee, Jin-Kook
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.175-178
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    • 2006
  • Solid-state dye-sensitized solar cells were fabricated using a polymer matrix in electrolyte in the purpose of the improvement of the durability in the dye-sensitized solar cell. In these dye-sensitized solar cells, the polymer electrolyte consisting of $I_2$, LiI, ionic liquid, ethylene carbonate/propylene carbonate and polymer matrix was casted onto $TiO_2$ electrode impregnated Ruthenium complex dye as a photosensitizer. Photovoltaic properties of solid-state dye-sensitized solar cells using polymer matrix (PMMA, PEG, or PAN) were investigated. Comparing photovoltaic effects of cells using hole conducting polymers (BE or 6P) instead of polymer matrix, we investigated the availability of the solid-state polymer electrolyte in dye-sensitized solar cells.

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Design and optimization of thermal neutron activation device based on 5 MeV electron linear accelerator

  • Mahnoush Masoumi;S. Farhad Masoudi;Faezeh Rahmani
    • Nuclear Engineering and Technology
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    • v.55 no.11
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    • pp.4246-4251
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    • 2023
  • The optimized design of a Neutron Activation Analysis (NAA) system, including Delayed Gamma NAA (DGNAA) and Prompt Gamma NAA (PGNAA), has been proposed in this research based on Mevex Linac with 5 MeV electron energy and 50 kW power as a neutron source. Based on the MCNPX 2.6 simulation, the optimized configuration contains; tungsten as an electron-photon converter, BeO as a photoneutron target, BeD2 and plexiglass as moderators, and graphite as a reflector and collimator, as well as lead as a gamma shield. The obtained thermal neutron flux at the beam port is equal to 2.06 × 109 (# /cm2.s). In addition, using the optimized neutron beam, the detection limit has been calculated for some elements such as H-1, B-10, Na-23, Al-27, and Ti-48. The HPGe Coaxial detector has been used to measure gamma rays emitted by nuclides in the sample. By the results, the proposed system can be an appropriate solution to measure the concentration and toxicity of elements in different samples such as food, soil, and plant samples.

Lamellar Structured TaN Thin Films by UHV UBM Sputtering (초고진공 UBM 스퍼터링으로 제조된 라멜라 구조 TaN 박막의 연구)

  • Lee G. R.;Shin C. S.;Petrov I.;Greene J, E.;Lee J. J.
    • Journal of Surface Science and Engineering
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    • v.38 no.2
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    • pp.65-68
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    • 2005
  • The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.