• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.286-290
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• 1999

Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/Phosphor/Insulator/Silver paste. The transparent electrode was ITO film and green(2704-01), orange(2702-02) and blue-green(2703-01) were used as phosphor. The insulator was BaTiO$_3$ and $Y_2$O$_3$, back electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness, Transferred charge density using Sawyer-Tower\`s circuit was measured.

• 대한금속재료학회지
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• 제49권5호
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• pp.367-373
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• 2011

This paper studies the experimental method that uses the homogeneous precipitation method to prepare mica flakes coated with anatase-type titania pearlescent pigment with urea as precipitant. The optimum technology parameters, the chemical composition, the microstructure, and the color property of resulting pigments are discussed. The coating principle of mica coated titania with various coating thickness is analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy(TEM) and tested by spectrophotometer analysis. The colored nanocrystalline pigments with different morphology and coating thickness 45-170 nm were prepared by homogeneous precipitation treatment of $TiOSO_4$(titanum oxysulfate) aqueous solutions. Characterizations on the pigments show that the pearlescent effects of the pigments depend mainly on mica size, thickness of the metal oxide deposit, its chemical composition, and crystal structure.

• 한국결정성장학회지
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• 제15권6호
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• pp.244-251
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• 2005

수열합성법에 의해 제조된 티탄산바륨 (BT01, BT02, BT03, BT04, BT05)의 입자크기와 분체특성과의 상관관계를 비표면적, 제타전위, XPS, XRD 및 SEM에 의해 조사하였다. 레이져광산법에 의해 측정된 입자의 크기는 비표면적과 XRD를 통해 결정된 격자이방성과 밀접한 관계가 있음을 보였다. 분말의 비표면적은 입자의 크기가 증가함에 따라 감소하였으며, BT03 시료는 동일한 입자크기의 BT04에 비하여 큰 비표면적을 보였으며, 이는 입자들의 응집에 기인하는 것으로 SEM사진 및 XRD 분석을 통하여 밝혀졌다. 입자의 크기가 증가함에 따라 제타전위는 증가하는 경향을 보였으며, BT02와 BT03 분말은 다른 분말에 비하여 제타전위가 큰 음의 값을 나타내었다. XPS 분석결과 분쇄시 티탄산바륨과 물 사이의 반응에 의한 $Ba^{2+}$ 이온의 용출과 관련이 있는 것으로 분석되었다.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.33-38
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• 2003

Highly homogeneous PZT powder was prepared by a partial oxalate method using chemicals of (Z $r_{0.53}$ $Ti_{0.47}$) $O_2$, Pb(N $o_3$)$_2$and (COOH)$_2$ㆍ2$H_2O$. N $b_2$ $O_{5}$ addition effect on microstructure and electrical properties of PZT ceramics was investigated. When the precursors were calcined at 71$0^{\circ}C$, a single perovskite phase was obtained. After sintering at 110$0^{\circ}C$, X-ray diffraction Patterns showed coexistence of rhombohedral and tetragonal phases regardless of the N $b_2$ $O_{5}$ content. As the content of N $b_2$ $O_{5}$ increased, grain size decreased but sintered density increased. The electromechanical coupling factor of kp and the piezoelectric constant of $d_{31}$ increased linearly with the content of N $b_2$ $O_{5}$, and those values reached 0.7 and -200, respectively, when 1.2 mol% of N $b_2$ $O_{5}$ is added. is added.ded.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.274-280
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• 1998

Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.142-145
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• 2004

[ $Pb(Zr_{0.8}Ti_{0.2})TiO_3$ ] powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method. and then the structural properties as a function of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70{\sim}90{\mu}m$. The PZT thick film, sintered at $1050^{\circ}C$, showed deuse and uniform grain stractures and percent porosity of the thick film was 25.43%.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2010년도 춘계학술발표대회 초록집
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• pp.32-38
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• 2010

Hybrid material(ceramic+metal) processes were developed for micro filter using ceramics coating at metal filter surface by thermal spray method, micro hole drilling at ceramic coated filter surface by femtosecond laser, and fiber laser direct welding of ceramic and metal (SUS304, SM45C) by capillary effect. Thermal spray process was used for ceramic powders and metal filters. The used ceramic powders were $Al_2O_3+40TiO_2$(Metco 131VF) powder of maximum particle size $5{\mu}m$ and ${Al_2O_3}99+$(Metco 54NS) power of maximum particle size 45m. Ceramic coated filters using thermal spray method had a great influence on powder material, particle size and coating thickness but had a fine performance as a micro filter. CW fiber laser was used to drill the top ceramic layer and melt the bottom metal layer for joining applications.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.120-120
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• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1255-1257
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• 1998

In this study,$ 5{\times}5$ dot-matrix display was implemented with powder electroluminescent device (PELD). Generally PELD which have a luminance from powder phosphor with electric field, inserted phosphor and dielectric layer between electrodes is basic structure. To make high brightness PELD compared to conventional device, new type of PELD was proposed as follows. New PELD had only one layer, which was mixed phosphor (ZnS:Cu) and dielectric (BaTiO3) material appropriately between electrodes. To compare and estimate the conventional and new type of PELD, the EL spectrum, transferred charge density, brightness and decay time was measured. As above result, we fabricated a hish brightness $ 5{\times}5$ dot-matrix display with new type of PELD. Its brightness was 6400 $cd/m^2$ at 200 V, 400Hz.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1102-1103
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• 2006

The pretreatment for substrate was carried out in change of gun pressure of $0.5\sim3.5$ bar using wet blasting. The size of $Al_2O_3$ powder was about $50{\sim}150{\mu}m$. As the results, the surface roughness of cemented carbide substrate was improved with increment of gun pressure of wet blasting. A new surface layer was formed and Co particles were uniformly distributed over the entire surface after pretreatment. The adhesion of the pretreated substrate in same PVD-TiAlN film was improved and in approximately $Ra=90\sim120\;nm$ shown the best adhesion value.