• Journal of Environmental Science International
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• v.15 no.7
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• pp.677-688
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• 2006

Currently, the application of $TiO_2$ photocatalyst has been focused on purification and treatment of wastewater. However, the use of conventional $TiO_2$ slurry photocatalyst results in disadvantage of stirring during the reaction and of separation after the reaction. And the usage of artificial UV lamp has made the cost of photocatalyst treatment system high. Consequently, we studied that solar light/$TiO_2$ film system was designed and developed in order to examine disinfection characteristics of sewage wastewater treatment. The optimum conditions for disinfection such as solar light intensity, characteristic of sewage wastewater, amounts of $TiO_2$ and comparison of solar ligth/$TiO_2$ systems with UV light/$TiO_2$ system was examined. The results are as follows: (1) photocatalytic disinfection process with solar light in the presence of $TiO_2$ film more effectively killed total coliform (TC) than solar light or $TiO_2$ film absorption only. (2) The survival ratio of TC and residual ratio of organic material (BOD, CODcr) decreased with remain resistant material. (3) The survival ratio of TC and residual ratio of organic material (BOD, CODcr) decreased with the increase of amounts of $TiO_2$. (4) TC survival ratio decreased linearly with increasing UV light intensity. (5) The disinfection effect of solar light/$TiO_2$ slurry system decreased more than UV light/$TiO_2$ film systems. (6) The disinfection reaction followed first-order kinetics. We suggest that solar light instead of using artificial UV light was conducted to investigate the applicability of alternative energy source in the disinfection of TC and the degradation of organic material.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.240-248
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• 2002

$Fe_xTi_{l-x}O_2$ films (x=0.07 and 0.16) were grown by oxygen-plasma-assisted molecular beam epitaxy on rutile $TiO_2$(110). The same growth conditions were applied for both films in order to determine surface characteristics of grown films as a function of Fe composition. The films were characterized by several surface analysis techniques. The oxidation states of Ti and Fe in $Fe_xTi_{l-x}O_2$ films were found to be +4 and a mixture of +2 and +3, respectively. More $Fe^{3+}$ species exist in higher Fe doped film of $Fe_{0.16}Ti_{0.84}O_2$. The morphology of $Fe_{0.07}Ti_{0.93}O_2$ film shows tall rectangular and cylinderical islands growth on flat substrate-like surface. On the other hand, $Fe_{0.16}Ti_{0.84}O_2$ film consists of round shaped small islands showing somewhat rougher surface compared to the surface of $Fe_{0.16}Ti_{0.84}O_2$ film.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.373-378
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• 2000

There was a great difference in the formation kinetics of $TiO_2$ and $Bi_2O_3$ on silicon, but the growth of bismuth titanate (BIT) thin film was mainly limited by the formation of $TiO_2$. As a result, the BIT film was easy to be lack of bismuth. The pulse injection metalorganic chemical vapor deposition (MOCVD) process was introduced in order to overcome this problem by recovering the insufficient bismuth content in the film. By this pulse injection method, bismuth content was increased and also the uniform in-depth composition of the film was attained with a abrupt $Bi_4Ti_3O_{12}/Si$ interface. In addition, the crystallinity of $Bi_4Ti_3O_{12}$ thin film prepared by pulse injection process was greatly improved and the leakage current density was lowered by 1/2~1/3 of magnitude. Clockwise hysteresis of C-V was observed and the ferroelectric switching was confirmed for $Bi_4Ti_3O_{12}$ film deposited by pulse injection method.

• Journal of the Korean Chemical Society
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• v.41 no.5
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• pp.223-233
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• 1997

Ultra-thin $TiO_2$ films are grown on the Mo(100) surface using evaporated Ti metal under ambient $O_2$ pressure. The thickness of the $TiO_2$ film is controlled by the dosing rate of Ti metal over Mo(100) which is determined from the Auger signal changes with dosing time. 30 ML, 5 ML, and 1.6 ML thick films are prepared and used to determine the growth mechanism, the chemical composition, and the surface structure of the films. The growth mechanism of the $TiO_2$ film on Mo(100) is observed to follow the layer-by-layer growth mechanism. The chemical composition of the film is found to be that of bulk $TiO_2$. The surface plane of the film is (001), which facets irreversibly at 1200 K. The LEED pattern obtained from the film can be explained with the faceted surface with {011} planes reconstructed to $(2\sqrt2{\times}\sqrt2)R45^{\circ}$ with respect to the $TiO_2$ (001) surface. The film is somewhat thermally unstable when annealed to 1300 K. The film sputtered with $Ar^+$ ion is also studied by XPS.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.153-159
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• 2020

Photocatalytic decomposition of polyethylene film with TiO₂ nanotube powders (NTs) was investigated under UV irradiation at ambient conditions. TiO₂ NTs composed of individual nanotubes are prepared by rapid breakdown anodization technique. A comparative study on the photocatalytic decomposition of polyethylene-TiO₂ composite films prepared using TiO₂ nanoparticles (NPs) or TiO₂ NTs (NTs), respectively, was conducted under UV irradiation. Polyethylene film incorporated with TiO₂ NTs showed 26 wt% weight loss after 200 h under UV irradiation about two times faster decomposition rate than TiO₂ NPs which is attributed to large surface area of TiO₂ NTs.

• Solar Energy
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• v.9 no.1
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• pp.14-21
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• 1989

Preparation of $TiO_2$ Film by the Dip-coating Method and its Application to photo-electrochemical Electrodes. $TiO_2$ film of n-type semiconductor has been of great interest as a material for solar energy conversion. For its practical application, the dip-coating method has been applied to prepare $TiO_2$ (anatase) film on the nesa glass substrate. Films up to about $1.8{\mu}m$ in thickness can be obtained by repeating the operation, dipping $\to$ pulling up $\to$ drying $\to$ heating at $500^{\circ}C$ for 10 minute. Heating temperature at $500^{\circ}C$ was adopted to convert $TiO_2$ gels into $TiO_2$ crystalline films. The $TiO_2$ films showed the maximum photocurrent ($14mA/cm^2$) at the film thickness of about $1.8{\mu}m$. It was also found that the additional heating at $500^{\circ}C$ for about 20 minutes improved remarkably the photo current of the $TiO_2$ films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.291-296
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• 2006

In this study, the sputtered BTO film was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO ($BaTiO_3$) thin film using the $BaTiO_3$-mixed abrasive slurry (BTO-MAS) was higher than that using the $TiO_2$-mixed abrasives slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%) below 5% was obtained in each abrsive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.482-487
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• 2002

A $TiO_2$ film for photocatalyst was prepared by anodic oxidation at 180V in acidic electrolyte and film formation mechanism was studied. The major part of anodic $TiO_2$ film consisted of anatase type structure and surface morphology exhibited a porous cell structure. The thickness growth rate of the oxide film with anodization time revealed two-stage slope corresponds to the surface morphology between anodic films. The growth of pores on cell structure and the growth rate of film with two-stage slope are related to the constant formation rate of the $TiO_2$ layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.437-442
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• 2018

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.