• 한국산학기술학회논문지
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• 제19권7호
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• pp.504-509
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• 2018

본 연구에서는 광범위로 사용되고 있는 황색안료 중에서 고기능성을 갖는 티탄옐로우 제조하고자 하였다. Anatase Type의 $TiO_2$를 골격제로 하고 발색제 산화물인 $Cr_2O_3$을 고용시키기 위하여 $Sb_2O_3$ 산화물을 발색보조제로 사용하였으며, 안료의 제조에 사용된 출발원료로는 $TiO_2$(98%), $Sb_2O_3$(99.5%), $Cr_2O_3$(99.5%)를 사용하였다. 출발원료를 건식으로 혼합하고, 고온($1,000{\sim}1,200^{\circ}C$)으로 소결하여 결정화하고 Jar Mill을 이용하여 $1{\mu}m$이하로 습식분쇄한 후에 건조온도 $100^{\circ}C$로 12시간 건조하고 믹서기로 미분쇄하여 안료를 제조하였다. 안료의 최적 소결온도를 선정하기 위하여 소결온도 $1000^{\circ}C$, $1100^{\circ}C$, $1150^{\circ}C$, $1200^{\circ}C$의 4구간을 설정하고, X선 회절분석을 통하여 결정상을 확인한결과 $1150^{\circ}C$에서의 결정구조 Peak가 가장 좋은 것을 확인할 수 있었다. 이렇게 제조된 Rutile구조를 갖는 황색세라믹안료를 컬러강판의 코팅재료로 적용하고자 하였다. 제조된 안료에 대하여 내후성, 내산성, 내알카리성, 내열성 시험을 하여 색상변화를 측정하였으며, 유해중금속($Cr^{+6}$)검출시험을하였다. 내후성(2000hr)시험결과의 색상변화(${\Delta}E$)는 0.74, 내산성, 내알카리성, 내열성시험의 색상변화(${\Delta}E$)는 각각 0.16, 0.07, 0.29로 거의 변색되지 않은 것을 알 수 있었으며, 유해중금속($Cr^{+6}$)검출시험결과는 34ppm이었다.

• 청정기술
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• 제22권2호
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• pp.132-138
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• 2016

상용 발전소에서 LNG를 제외한 대부분의 연료 연소시 SO₂의 배출은 필연적이며, 이는 NOx 저감용 SCR촉매의 내구성에 영향을 미치므로 저온영역에서 SO₂에 대한 내구성과 NOx 저감 성능이 우수한 SCR촉매 개발을 목적으로 Sb₂O₃의 함침량을 달리하여 metal foam 지지체에 코팅하여 촉매를 제조하였다. 실험실 규모의 상압반응기를 이용하여 NOx 저감 성능 시험을 수행하였고, 제조된 촉매의 특성은 Porosimeter, BET, SEM (scanning electron microscope), EDX (energy dispersive X-ray spectrometer), XPS (X-ray photoelectron spectroscopy) 기기를 이용하여 분석하였다. 촉매의 특성분석결과 비표면적은 Sb₂O₃의 함침량에 따라 증가하였고, NOx 전환활성 효율은 Sb₂O₃를 2 wt% 함침한 촉매가 가장 우수한 것으로 측정되었다. 또한 Sb₂O₃를 첨가한 촉매는 SO₂에 장시간 노출 시켰을 경우에도 NOx 전환활성 효율이 유지되는 것으로 나타났고, 활성온도영역과 SO₂의 존재 유무에 따라 Sb₂O₃ 함량을 조절함으로써 효율적인 촉매의 제조가 가능함을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.312-317
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• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.24-27
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• 2009

Solid-state dye-sensitized solar cells (DSSCs) have been constructed employing supramolecular electrolytes with multiple hydrogen bonding. A supramolecule was facilely synthesized by one-pot reaction between the amines of methyl isocytosine (MIC) and the epoxy groups of poly(ethylene glycol diglycidyl ether) (PEGDGE) to produce quadruple hydrogen bonding units. Hydrogen bonding interactions and dissolution behavior of salt in supramolecular electrolytes are investigated. The ionic conductivity of the supramolecular electrolytes with ionic liquid, i.e. 1-methyl-3-propylimidazolium iodide (MPII) reaches $8.5{\times}10^{-5}$ S/cm at room temperature, which is higher than that with metal salt (KI). A worm-like morphology is observed in the FE-SEM micrographs of $TiO_2$ nanoporous layer, due to the connection of $TiO_2$ nanoparticles resulting from adequate coating by electrolytes. DSSCs employing the supramolecular electrolytes with MPII and KI exhibit an energy conversion efficiency of 2.5 % and 0.5 %, respectively, at 100 $mW/cm^2$, indicating the importance of the cation of salt. Solar cell performances were further improved up to 3.7 % upon introduction of poly(ethylene glycol dimethyl ether) (PEGDME) with 500 g/mol.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• 공업화학
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• 제16권3호
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• pp.385-390
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• 2005

본 연구에서는 seed sol 부가법을 통해 나노 사이즈의 콜로이달 Ag를 제조하였다. 제조된 콜로이달 Ag 용액은 hybridizer system과 spray nozzle을 통하여 제지용 무기안료 표면에 분사한 후 이산화티탄으로 표면개질하여 기능성 항균 복합 분체를 제조하였다. 나노 사이즈의 콜로이달 Ag 제조에 있어 $AgNO_3$의 첨가와 시간의 경과에 따라 흡수도가 커지는 것으로 단위 중량당 입자의 크기가 커짐을 확인할 수 있었다. 제조된 기능성 무기안료의 항균성 측정은 균들의 해당 균주에서 시간이 증가함에 따라 균의 성장이 억제되는 결과를 나타내었고 항균접종 실험 실시 후 5~7 h 안에 항균성이 발현되면서 일정한 시간 범위 내에서의 항균력이 우수한 것으로 측정되었다. 또한 $TiO_2$의 광촉매 효과 측정 결과 benzene의 광분해 효율실험에서 반응시간 80 min 동안 60~70% 정도의 효율을 보였고, 반응시간 30 min 정도에서 이미 달성한 분해효율이 90% 이상에 도달해 있음을 알 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.146-146
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• 2017

산화비스무트는 리튬이온과의 반응에서 현재 상용화된 그래파이트보다 높은 이론용량을 가지고 있으나, 리튬이온과의 반응에서 비교적 큰 부피팽창 특성을 가져 리튬이차전지의 음극재로서 상용화가 어려운 단점이 있다. 본 연구에서는, 이러한 문제점을 개선하기 위하여 양극산화법을 통해 충 방전시 부피팽창 변화가 매우 적은 타이타니아 나노튜브를 제조한 후, 그 위에 스프레이 방법으로 산화비스무트를 코팅하여 두 물질의 복함체를 만듦으로써 용량과 구조적 안정성을 향상시키는 방법을 소개한다. 음극재의 구조적 특성은 고분해능 주사전자현미경 (HR-SEM), 고분해능 엑스선 회절분석기(XRD)를 통해 조사하였으며, 전기화학 임피던스 분광법 (EIS), 순환전류법 (CV), 충 방전 싸이클 분석을 통해 리튬이차전지의 작동원리와 보다 향상된 성능을 규명하였다.

• ETRI Journal
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• 제27권5호
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• pp.551-556
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• 2005

We have demonstrated a high-power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of $TiO_2\;and\;SiO_2$ was lower than $3\;{\times}\;10^{-4}\;over$ a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.