• 한국환경과학회지
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• 제11권7호
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• pp.757-763
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• 2002

The objective of this study is to delineate removal efficiency of the Linear alkylbenzene sulfonates(LAS) in solution by $TiO_2$ photocatalytic oxidation as a function of the following different experimental conditions : initial concentration of LAS, $TiO_2$ concentration, UV wavelength and pH of the solution. It was increased with decreasing initial concentration of LAS and with decreasing pH of the solution. Removal efficiency increased with increasing $TiO_2$ concentration but was almost the same at $TiO_2$ concentration of 2 g/L and 3 g/L, i.e., for initial LAS concentration of 50 mg/L. It was removal efficiency was 85% at 150 min in the case of $TiO_2$ concentration of 0.5 g/L but 100% after 150 min in the case of $TiO_2$ concentration of 1 g/L, 100% after 110 min in the case of $TiO_2$ concentration of 2 g/L and 3 g/L. UV wavelength affection on the removal efficiency of LAS decreased in the order of 254, 312 and 365 nm as increasing wavelength. But the removal efficiency of LAS was nearly the same at UV wavelength of 254 nm and 312 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.385-385
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• 2010

In this work, we have investigated the etching characteristics of $TiO_2$ and selectivity of $TiO_2$ over $SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the $BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at $BCl_3$/Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched $TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction.

• 한국세라믹학회지
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• 제49권6호
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• Journal of information and communication convergence engineering
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• 제16권4호
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• pp.248-251
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• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

• 한국산학기술학회논문지
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• 제18권3호
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• pp.1-6
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• 2017

태양전지의 셀을 보호하기 위한 커버 글라스에는 반사방지 코팅 및 셀프클리닝과 같은 기능성 코팅이 적용되어왔다. 일반적으로 메조포러스 실리카를 이용한 반사방지 코팅은 빛의 투과를 증가시키며, $TiO_2$ 광촉매 필름은 셀프클리닝 코팅에 적용되어왔다. 본 연구에서는 $SiO_2/TiO_2$ 박막 코팅에 의한 투명 발수 반사방지 및 셀프클리닝 코팅을 sol-gel 공정과 dip-coating 공정으로 글라스 기판 위에 제조하였다. 기능성 코팅의 표면형상은 전계방출 주사전자현미경과 원자힘 현미경으로 분석하였고, 광학적 특성은 UV-visible 분광광도계로 분석하였다. 필름의 발수특성은 접촉각 측정으로 확인하였다. 그 결과 $TiO_2$ 필름은 기판인 슬라이드 글라스와 비슷한 수준의 높은 광 투과율을 나타내었다. 일반적으로 $TiO_2$ 나노입자는 필름에서 반사를 증가시키며, 결과적으로 투과율의 저하를 가져온다. 하지만 본 연구의 $SiO_2/TiO_2$ 박막으로 이루어진 기능성 코팅은 $110^{\circ}$의 접촉각을 나타내었으며, 파장 550 nm에서 기판인 슬라이드 글라스의 투과율보다 2.0% 증가한 93.5%의 광 투과율 특성을 나타내었다.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• 한국세라믹학회지
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• 제28권4호
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• 한국세라믹학회지
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• 제33권11호
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• pp.1267-1275
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• 1996

Green sheet was prepared by tape casting in the composition of (1-x)Pb(Mg1/3Nb2/3)O3-PbTiO3 system using Pb(Mg1/3Nb2/3)O3 and PbTiO3 synthesized with PbO, Nb2O5 MgO and TiO2 The densest green sheet was obtained in the weight ratio 70:30 of powder to binder. Green sheet wasmultilayered in metal mould and formed into lamination at 7$0^{\circ}C$, 300kg/cm2 The lamination was sintered at 110$0^{\circ}C$ 2hr, Dielectric constant and Curie temperature of disc type sintered body was highered with increasing the amount of PbTiO3 and was in the range of 19000-21000, -7~45$^{\circ}C$ respectively. Green and sintered relative density of lamination was 61% and 95% respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.110.1-110.1
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• 2007

• 센서학회지
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• 제18권2호
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• pp.110-115
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• 2009

Polystyrene (PS) microspheres were used to good advantage as a template material to prepare macroporous $TiO_2$ thin films. This is enabled to run the thermal decomposition of the PS without the collapsing of the 3-D macroporous framework during the calcination step. $TiO_2$ thin films were deposited onto the colloidal templated substrates at room temperature by RF sputtering, and then samples were thermally treated at $450^{\circ}C$ for 40.min in air to remove the organic colloidal template and induce crystallization of the $TiO_2$ film. The macroporous $TiO_2$ thin film exhibited a quasi-ordered partially hexagonal close-packed structure. Burst holes, estimated to be formed during PS thermal decomposition, are seen as the hemisphere walls. the inner as well as the outer surfaces of the hollow hemispheres formed by the method of thermal decomposition can be easily accessed by the diffusing gas species. As a consequence, the active surface area interacting with the gas species is expected to be enlarged about by a factor of fourth as large as compared to that of a planar films. Also the thickness at neighboring hemisphere could be controlled a few nm thickness. If the acceptor density becomes as large that depletion width reaches those thickness, the device is in the pinch off-situation and a strong resistance change should be observed.