• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.637-643
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• 2003

In order to improve the photoluminescent properties and crystallinity, Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) phosphors were synthesized by the sol-gel method. The willemite single phase was obtained at 110$0^{\circ}C$, which is lower temperature than that of the conventional solid-state reaction (130$0^{\circ}C$). The characteristics of fired samples were obtained by a 147 nm excitation source under VUV (Vacuum Ultraviolet). To investigation the effect of co-dopant, the content of Mn and the ratio of $H_2O$ to TEOS was fixed as 2 ㏖% and 36. 1, respectively. The highest emission intensity was obtained when the concentration of Cr and Ti was 0.1 ㏖% relative to Zn$_2$SiO$_4$:Mn. While the emission intensity decrease continuously the decay time improved as increased the Cr concentration. In the case of Ti added samples, however, the emission intensity increase up to 2 ㏖％ concentration.

• Proceedings of the Optical Society of Korea Conference
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• 2006.02a
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• pp.109-110
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• 2006

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.412-417
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• 2001

본 연구는 습식법으로 수산화 알루미늄과 티타니아를 출발물질로 하여 $Al_2$O$_3$-TiO$_2$복합분체를 제조하였으며, 2 mol의 Al(OH)$_3$분말에 대하여 TiO$_2$분말량을 1, 3, 5, 7, 9, 11 wt%로 첨가하여 $Al_2$O$_3$-TiO$_2$복합분체의 특성을 조사하였다. 제조된 $Al_2$O$_3$-TiO$_2$계 복합분체는 $700^{\circ}C$~140$0^{\circ}C$까지 하소하여 XRD 분석을 한 결과 100$0^{\circ}C$까지는 TiO$_2$(rutile)상과 η-Al$_2$O$_3$상이 공존하다가 110$0^{\circ}C$부터 130$0^{\circ}C$까지는 η-Al$_2$O$_3$에서 $\alpha$-Al$_2$O$_3$로의 상전이가 일어나서 $\alpha$-Al$_2$O$_3$상과 TiO$_2$(rutile)상이 나타났으며 하소온도 140$0^{\circ}C$, TiO$_2$첨가량이 5 wt%일 때부터 $Al_2$TiO$_{5}$가 생성되기 시작하였다. TiO$_2$첨가량에 따른 비표면적값은 첨가량이 7 wt%까지는 감소하였으나 그 이상 첨가시 증가하였다. 입도분석 결과 평균입경은 15.74~23.21$mu extrm{m}$로서 TiO$_2$첨가량이 3 wt%일 때 가장 작은 값을 가졌으며 TiO$_2$첨가량은 5 wt% 이상부터 점차 감소하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.127-130
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• 2001

The $BaTiO_3+xNb_2O_5$(x=6, 8, 10wt%) ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_3+Nb_2O_5$ ceramics with the sintering temperature and addition of $Nb_2O_5$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\theta}$ value of BT(110) peak was shifted to the lower degree and intensity of the $Ba_6Ti_2Nb_8O_{30}$ (133) peak was increased. Increasing the addition of $Nb_2O_5$, the intensity of $BaTiNb_4O_{13}$ (201) peak was decreased and $Ba_6Ti_2Nb_8O_{30}$ (133) peak was increased. The grain size of the $BaTiO_3+Nb_2O_5$ ceramics sintered at $1500^{\circ}C$ were almost uniform.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1335-1341
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• 1999

The electrical conductivity ($\sigma$) of TiO2 doped with 0.05-4.0mol% Nb2O5 was measured in the oxygen partial pressure range of 10-17 to 100 atm and temperature range of 1100 to 130$0^{\circ}C$ to investigate the electrical properties and defect types. The oxygen partial pressure dependence of the electrical conductivity (log$\sigma$/logPo2) above 110$0^{\circ}C$ was divided into the four regions. From these experimental results the following defect regions were proposed ; 1) Magneli phase(extended defect) 2) reduced rutile region where intrinsic defect predominates 3) nearly stoichiometric region which is independent on the oxygen partical pressure and 4) overstoichiometric region which is not observed in pure TiO2 The electrical conductivity of Nb-doped TiO2 depended on the doping content the oxygen partial pressure and the measuring tem-perature.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.362-368
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• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• Journal of Welding and Joining
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• v.27 no.2
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• pp.38-43
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• 2009

In this study, we investigated photocatalytic ability of plasma sprayed $TiO_2$ and Ag sputtering $TiO_2$(Ag-$TiO_2$) coatings. A sputtering processes were adopted to coat the surface of $TiO_2$ with Ag(99.99%). Ag was sputtered at 10mA, 450V for $1{\sim}11$ seconds. $TiO_2$ and Ag-$TiO_2$ coatings were heat-treated at 250, 300, 350, $400^{\circ}C$ for $0{\sim}240$seconds. Photoelectrical conductivity was measured by four-point probe, and photodegradation was calculated by UV-V is spectrometer. Microstructure observation of $TiO_2$ and Ag-$TiO_2$ coatings were investigated by SEM. Crystal structure of $TiO_2$ and Ag-$TiO_2$ coatings were investigated by XRD. Qualitative analyses of $TiO_2$ and Ag-$TiO_2$ coatings were conducted by EDX. When $TiO_2$ coatings were heat-treated at $350^{\circ}C$ for 30 sec, photoelectrical conductivity and photodegradation were best. And in XRD analysis result, (101)/(110) relative intensity ratio of $TiO_2$(rutile) was comparably changed with photoelectrical conductivity. When Ag-$TiO_2$ coatings were heat-treated at $350^{\circ}C$ for 30 [sec] after sputtering Ag for 7 sec, Photoelectrical conductivity and photodegradation are best. Surface of coatings in such condition has very small and uniform Ag particles.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.359-364
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• 1991

The effects of Pb5Ge3O11 on the sinterbility and lattice variation of the semiconducting 0.15 mol% Y2O3 doped BaTiO3 have been investigated as functions of additive contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 110$0^{\circ}C$ to 130$0^{\circ}C$). As the amount of Pb5Ge3O11 increases, the sinterbility of BaTiO3 increases abruptly at around 115$0^{\circ}C$. During the sintering, the most of Pb+2 ions in additives penetrate into BaTiO3 lattices and Ge+4 ions present at grain boundaries. Therefore the c lattice of the BaTiO3 increases largely and then the tetragonality increases due to the diffusion of the Pb+2 ions.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.63-67
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• 1985

$BaTiO_3$ and $SrTiO_2$ were mixed with the mole ratio of 36:65:50, 50: 50 and 65:35 and then heated at 110$0^{\circ}C$~130$0^{\circ}C$ for 1~64 hrs. The solid state reactions and dielectric properties were investigated as a function of amount of solid solution. Activation energy of solid solution decreased with increasing amount of $BaTiO_3$ due to fast diffusion of $Ba^{2+}$ ions. Dielectric constants increased with increasing the soaking time at 125$0^{\circ}C$and 130$0^{\circ}C$ and Curie Temperature shifted to higher temperature with increasing the soaking time at 125$0^{\circ}C$ and 130$0^{\circ}C$. It attributes to the am-ount of solid solution and grain growth, Dielectric constants decreased and Curie Temperature shifted to lower temperature due to decreasing polari-zability.