• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.139-144
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• 2016

The dependence of the microwave dielectric properties of the glass-ceramic composite $0.9CaMgSi_2O_6-0.1MgSiO_3$ on the crystallization behaviour was investigated as functions of the $TiO_2$ content and heat-treatment temperature. The crystallization behaviour of the specimens was evaluated via a combination of the Rietveld and reference-intensity ratio methods. For specimens with a $TiO_2$ content of up to 1 wt.%, a monoclinic diopside phase was formed, whereas a secondary $TiO_2$ phase was formed with further increases in the $TiO_2$ content. The quality factor (Qf) of the specimens was strongly dependent on the degree of crystallization. The highest Qf value was obtained with a $TiO_2$ content of 0.5 wt.%, which was improved by increasing the heat-treatment temperature. The dielectric constant (K) was affected by the size of the crystallites and the $TiO_2$ content. The temperature coefficient of the resonant frequency (TCF) was nearly constant for all of the specimens, regardless of the $TiO_2$ content or heattreatment temperature.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.44-49
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• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.658-664
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• 1997

The effect of metal oxides($K_2O, MgO, CaO,Al_2O_3$, and $TiO_2$) on the kinds of pure $SiO_2$ phase, and $SiO_2$ phases in the composition of vitreous porcelain body was investigated. Also, the effect of the ratio $SiO_2$ to $Al_2O_3$ in the composition of porcelain body with stabilized of cristobalite phase was investigated. In the case of the addition of $K_2O, MgO, CaO, Al_2O_3$, and $TiO_2$ to pure $SiO_2$, the major phase was $\alpha$-cristobalite, $\alpha$-cristobalite, $\alpha$-quartz, $\alpha$-quartz and amorphous, respectively. As the ratio of $SiO_2$ to $Al_2O_3$ in the composition of porcelain body was decreased, the stabilization of cristobalite phase was promoted and only the critical value of $SiO_2/Al_2O_3$ ratio that stabilizing the cristobalite phase in it was 68.10/22.75. The addition of $K_2$O, MgO, CaO,Al_2O_3$, and $TiO_2$ to the composition of porcelain body stabilized already did not affect on the formation of $\alpha$-cristobalite phase which degraded the thermal properties of porcelain body, and suppressed the formation of a, $\beta$-cristobalite.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.28-33
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• 1993

산화분위기에서의 Ti/SiO2 박막의 산화거동 및 계면반응을 조사했다. SiO2막위에 100nm의 티타니움을 스퍼터법으로 형성하여 급속가열로(Rapid Thermal Processor)에서 온도를 달리하여 산화시켰다. 산화거동은 박막의 면저항의 측정, 산화막 두께측정, XPS(X-ray Photoelectron Spectroscopy)에 의한 조성분석으로 평가했다. 산화시 티타니움 면저항은 표면에서 산화로 인해 약 $500^{\circ}C$ 이상에서 증가하기 시작해서 $800^{\circ}C$에서 포화되었다. 이 때 막두께는 약 $700^{\circ}C$ 이상에서 약 2배로 증가한 후 일정한 두께를 나타내었다. 이 결과로부터 산화부산물에 도전성물질이 존재하는 것을 알 수 있었다. TEM과 XPS분석결과 40$0^{\circ}C$ 이상에서 산화시 Ti 표면에서부터 TiO2가 형성되고 $600^{\circ}C$ 이상에서는 TiO2의 형성과 Si의 석출이 확인되었다. 석출되는 Si의 양은 온도에 따라 증가했다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.544-549
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-39vo1.%TiB$_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2O_3+Y_2O_3$ and the sintering temperature. The result of phase analysis for the SiC-39vo1.%TiB$_2$ composites by XRD revealed $\alpha -SiC(6H),\; TiB_2,\; and YAG(Al_5Y_3O_{12})$ crystal phase. The relative density of SiC-39vo1.% $TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.8 MPa.m_{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$additives at $1750^{\circk}C$. The electrical resistivity of the SiC-39vo1.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25S^{\circ}C \;to\; 700^{\circ}C$.

• Journal of the Korean Society of Safety
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• v.14 no.1
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• pp.101-107
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• 1999

$TiO_2$ and $xTiO_2-ySiO_2$ system photocatalysts were developed by sol-gel method based on the change of production parameters, and their structure of crystallization and the specific surface area was measured. Considering the efficiency of the ethanol decomposition using the catalyst, the conclusion was made as follows: 1) By means of X-ray analysis of $TiO_2$ powder that is obtained from water and Titanium alkoxide with various molar ratios, it is shown that structure of crystallization is a dominating structure and, on the other hand, the crystallization of rutile also partly exists. The specific surface area is at its maximum value at R=6, which is the molar ratio of water vs. alkoxide, whereas its value goes down as the molar ratio increases. In the reaction of using $TiO_2$ catalyst, the ethanol is decomposed into the extent of 15 ~30% in an hour and three hours are necessitated for 70% decomposition. 2) $TiO_2/SiO_2$ powder is developed from Titanium and Silicon alkoxide by a hetero-condensation process. The increase of SiO$_2$ contents causes the decrease of the degree of crystallization of the gel, whereas the specific surface area preferentially increases. In the decomposition reaction of the ethanol, the decomposition efficiency represents 25~60% in an hour. It is, however, examined that the efficiency inactively increases corresponding to the duration of reaction time. It is shown that more than 90% of ethanol is decomposed when reaction time is about three hours and the efficiency illustrates the maximum value for 60-$TiO_2/4O-SiO_2$ catalyst.

• Corrosion Science and Technology
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• v.14 no.2
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• pp.64-75
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• 2015

Single $TiO_2$ coating prepared by sol-gel process usually experiences cracks in coating layer. In order to prevent cracks, an inorganic-organic hybrid $TiO_2-SiO_2$ coating was synthesized by combining precursors with an organic functional group. Five different coatings with various ratios of (1:8, 1:4, 1:1, 1:0.25 and 1:0.125) titanium alkoxide (TBOT, Tetrabutylorthotitanate) to organo-alkoxysilane (MAPTS, ${\gamma}$-Methacryloxy propyltrimethoxysilane) on carbon steel substrate were made by sol-gel dip coating. The prepared coatings were analyzed to study the coating properties (surface crack, thickness, composition) by scanning electron microscope (SEM), focused ion beam (FIB), and Fourier transform infrared spectroscopy (FT-IR). Potentiodynamic polarization tests and electrochemical impedance spectroscopy (EIS) were also performed to evaluate the corrosion characteristics of the coatings. Crack free $TiO_2-SiO_2$ hybrid coatings were prepared with the optimization of the ratio of TBOT to MAPTS. The corrosion rates were significantly decreased in the coatings for the optimized precursor ratio without cracks.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.189-189
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• 2016

In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.227-232
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• 2000

$MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.