• 제목/요약/키워드: $TiO_{2-x}$

검색결과 1,885건 처리시간 0.174초

Photocatalytic removal of NOx using TiO2-coated zeolite

  • Mendoza, Joseph Albert;Lee, Dong Hoon;Kang, Joo-Hyon
    • Environmental Engineering Research
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    • 제21권3호
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    • pp.291-296
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    • 2016
  • Application of photocatalytic nanoparticles has been recently gaining an increased attention as air purifying material for sustainable urban development. The present work reports the photocatalytic removal of gaseous phase nitrogen oxides ($NO_x$) using $TiO_2$-coated zeolite to be applied as a filter media for the urban green infrastructure such as raingardens. The $TiO_2$-coated zeolite was synthesized by simple wet chemistry method and tested in a continuous-flow photo-reactor for its removal efficiency of $NO_x$ under different conditions of the weight percentage of $TiO_2$ coated on the zeolite, and gas retention time. The removal efficiency of $NO_x$ in general increased as the weight percentage of $TiO_2$ coated on the zeolite increased up to 15-20%. Greater than 90% of $NO_x$ was removed at a retention time of one minute using the $TiO_2$-coated zeolite ($TiO_2$ weight percentage = 20%). Overall, $TiO_2$-coated zeolite showed greater efficiency of $NO_x$ removal compared to $TiO_2$ powder probably by providing additional reaction sites from the porous structure of zeolite. It was presumed that the degradation of $NO_x$ is attributed to both the physical adsorption and photocatalytic oxidation that could simultaneously occur at the catalyst surface.

원자층 증착 기술을 이용한 TiOx 기반 TFT의 어닐링 효과 (Annealing Effect on TiOx Based Thin-Film Transistors with Atomic Layer Deposition)

  • 김한상;김성진
    • 한국전기전자재료학회논문지
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    • 제30권8호
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    • pp.474-478
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    • 2017
  • We report on thin-film transistors based on $TiO_x$ pre-annealed by femtosecond laser pulses. A 30-nm thick $TiO_x$ active channel layer was initially deposited by an ALD system. The $TiO_x$ semiconducting films were annealed by irradiation with a femtosecond laser (power: $3W/cm^2$) for 5, 25, and 50s. Atomic force microscopy images revealed that the surface of a $TiO_x$ film without femtosecond laser pre-annealing was relatively rough, while after annealing with femtosecond laser pulses, the surface of the $TiO_x$ films became smooth. With increasing radiation time, the surrounding gas atmosphere could have a larger impact on the $TiO_x$ surface; meanwhile, the thin-film roughness decreased. Thin-film transistors with $TiO_x$ active channels pre-annealed at 50s exhibited good transfer characteristics and an on-to-off current ratio of ${\sim}10^3$.

PZT/BT 이종 세라믹의 특성 (Characteristics of PZT/BT Multilayered thick film using Sol-gel Process)

  • 이상헌;이영희;이성갑
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.365-366
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    • 2005
  • PZT films are the most intensively investigated because PZT has advantages such as low processing temperature and large remnant values. In this paper, the microstructure and electric properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ heterolayered thick films with Zr mole ranging from 30 to 70 % screen printed onto a alumina substrate were studied. $Pb(Zr_x,Ti_{(1-x)})O_3$ and $BaTiO_3$ powders were prepared by the sol-gel method. The $BaTiO_3$ powders were calcined at $700^{\circ}C$ for 2 hours. Structural properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ multilayered thick films were investigated. As a result of the X-ray diffraction (XRD) analysis, $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ exhibited a perovskite polycrystalline phase without pyrochlore phase or any preferred orientation.

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Electronic and Magnetic Properties of Ti1-xMxO2-δ (M=Co and Fe) Thin Films Grown by Sol-gel Method

  • Kim, Kwang-Joo;Park, Young-Ran;Ahn, Geun-Young;Kim, Chul-Sung;Park, Jae-Yun
    • 한국자기학회지
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    • 제15권2호
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    • pp.109-112
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    • 2005
  • Electronic and magnetic properties of $Ti_{1-x}M_xO_{2-\delta}$ (M=Co and Fe) thin films grown by sol-gel method have been investigated. Anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films were successfully grown on $Al_2O_3$ (0001) substrates and exhibited p-type electrical conductivity while the undoped films n-type conductivity. Room temperature vibrating sample magnetometry measurements on the anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films with same x ($=4.8 at.{\%}$) showed quite similar magnetic hysteresis curves with the saturation magnetic moment of $\~4 {\mu}_B$ per Co ion despite their differences in structural and electronic properties. Such giant magnetic moment is attributable to the unquenched orbital moment of the $Co^{2+}$ ions substituting the octahedral $Ti^{4+}$ sites. Similar ferromagnetic behavior was observed for $Ti_{1-x}Fe_xO_{2-\delta}$ films that are highly resistive compared to the Co doped samples. Saturation magnetic moment was found to decrease for higher x, i.e., $\~2$ and $\~1.5 {\mu}_B$ per Fe ion for x=2.4 and 5.8 at. $\%$, respectively. Conversion electron $M\ddot{o}ssbauer$ spectroscopy measurements predicted the coexistence of $Fe^{2+}$ and $Fe^{3+}$ ions at the octahedral sites of $Ti_{1-x}Fe_xO_{2-\delta}$.

(Sr.Pb)TiO$_3$계 세라믹의 유전특성에 미치는 Bi$_2$O$_3$.3TiO$_2$의 영향 (Effects of Bi$_2$O$_3$.3TiO$_2$ on the Dielectric Properties of Ceramics in the system (Sr.Pb)TiO$_3$)

  • 최운식;김충혁;홍진웅;김재환;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1990년도 추계학술대회 논문집
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    • pp.68-70
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    • 1990
  • (1-X)(Sr$\_$7/9/Pb$\_$2/9/)$\_$(1-y)/(Ca$\_$1/5/Mg$\_$4/5/)$\_$y/TiO$_3$+X(BiO$_2$O$_3$$.$3TiO$_2$) (y=0.145, 0$\leq$X$\leq$0.08) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1180∼1230[$^{\circ}C$], 2[hr], respectly. The grain size were grown with increasing the contents of Bi$_2$O$_3$$.$3TiO$_2$, but decreased more and less in the specimens which had more than 0.04[mol].

(1-x)$CaMnO_{3}-xCaTiO_{3}$계 세라믹스의 전기적 특성 (Electrical Properties of (1-x)$CaMnO_{3}-xCaTiO_{3}$Ceramic System)

  • 안순영;윤상옥;윤종훈;장성식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.865-868
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    • 2000
  • It was examined that the relationship between microstructures, electrical properties and crystal structure of (1-x)CaMnO$_3$-xCaTiO$_3$solid solution system which was made by mixing a semiconducting material CaMnO$_3$of low resistance and a dielectric material CaTiO$_3$of high resistance with variable ratios (x=0, 0.1, 0.3, 0.5, 0.7, 0.9, 1.0). As the CaTiO$_3$increased, the resistance, B constant and lattice constant were increased, but the grain size was decreased. On particular, above 50wt% of CaTiO$_3$, the resistance at 2 5$^{\circ}C$ was rapidly increased due to the correlation in connectivity of the lattices between the conductive Mn$^{+4}$ octahedron and the insulative Ti$^{+4}$ octahedron.ron.

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강유전체$Ba_{1-x}Sr_xTiO_3$ 박막의 제조 및 상부전극재료에 따른 전기적 특성 (Deposition $Ba_{1-x}Sr_xTiO_3$Thin Films and Electrical Properties with Various Materials Top Electrodes)

  • 박춘배;김덕규;전장배
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권6호
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    • pp.410-415
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    • 1999
  • $Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

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$NO_x$ Chemistry Over Rutile $TiO_2$(110) Surfaces

  • 김유권
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.131-131
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    • 2012
  • We present our recent temperature-programmed desorption (TPD) study on catalytic reductions of $NO_x$ such as NO, $NO_2$, and $N_2O$ over rutile $TiO_2$(110) surfaces. Our results indicate that $NO_2$/NO readily reacts to give NO/$N_2O$ desorption at the substrate temperature as low as 100 K/70 K. Interestingly, $N_2O$, however, does not dissociate into $N_2$ and $O_{BBO}$ over the oxygen vacancy on the $TiO_2$(110) surface. Successive reduction of NO and $NO_2$ into $N_2O$ and NO, respectively, leaves oxygen atoms on the $TiO_2$(110) surface in a form of $O_{ad}$, which can induce additional reductive channels of NO and $NO_2$ at higher temperatures up to 400 K. During the repeated TPD cycles of $NO_x$, our x-ray photoelectron spectroscopy (XPS) analysis indicates that no N atom accumulates on the $TiO_2$ surface.

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유성 볼밀을 통해 제조된 TiO2-xNx 광촉매의 가시광 활성도와 NH3양 및 분쇄시간과의 상관 관계 (The Relation Between a Visible-light Photocatalytic Activity of TiO2-xNx and NH3 Amount/the Period of Grinding Time)

  • 강인철;고준빈;한재길;김광희;최성창
    • 한국분말재료학회지
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    • 제16권3호
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    • pp.196-202
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    • 2009
  • A visible-light photoactive $TiO_{2-x}N_x$ photocatalyst was synthesized successfully by means of cogrinding of anatase-$TiO_2(a-TiO_2)$ in $NH_3$ ambient, followed by heat-treatment at $200^{\circ}C$ in air environment. In general, it is well known that the grinding-operation induces phase transformation of a-$TiO_2$ to rutile $TiO_2$. This study investigates the influence of the amount of $NH_3$ gas on the phase transformation rate of a-$TiO_2$ and enhancement of visible-light photocatalytic activity, and also examines the relation between the photocatalytic activity and the period of grinding time. The phase transformation rate of a-$TiO_2$ to rutile is retarded with the amount of NH3 injected. And the visible-light photocatalytic activity of samples, was more closely related to the period of grinding time than $NH_3$ amount injected, which means that the doping amount of nitrogen into $TiO_2$ more effective to mechanical energy than $NH_3$ amount injected. XRD, XPS, FT-IR, UV-vis, Specific surface area (SSA), NOx decomposition techniques are employed to verify above results more clearly.

Ce첨가에 따른 MST 세라믹스의 마이크로파 유전특성 (Microwave Dielectric Properties of the MST Ceramics with addition of Ce)

  • 최의선;박인길;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.430-433
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    • 2001
  • The $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1300^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_{3}$ and ilmenite $MgTiO_{3}$ structures were coexisted in the $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics. The dielectric constant$(\varepsilon_{r})$ was increased with addition of Ce. The temperature coefficient of resonant frequency$(\Gamma_{f})$ was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the $0.96MgTiO_{3}-0.04SrTiO_{3}+0.2Ce$ ceramics was near zero, where the dielectric constant, quality factor, and $\Gamma_{f}$ were 20.68, 50,272 and ${-0.5ppm/^{\circ}C}$, respectively.

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