• Title/Summary/Keyword: $TiO_{2-x}$

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A Nano-particle Deposition System for Ceramic and Metal Coating at Room Temperature and Low Vacuum Conditions

  • Chun, Doo-Man;Kim, Min-Hyeng;Lee, Jae-Chul;Ahn, Sung-Hoon
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.1
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    • pp.51-53
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    • 2008
  • A new nano-particle deposition system (NPDS) was developed for a ceramic and metal coating process. Nano- and micro-sized powders were sprayed through a supersonic nozzle at room temperature and low vacuum conditions to create ceramic and metal thin films on metal and polymer substrates without thermal damage. Ceramic titanium dioxide ($TiO_2$) powder was deposited on polyethylene terephthalate substrates and metal tin (Sn) powder was deposited on SUS substrates. Deposition images were obtained and the resulting chemical composition was measured using X-ray photoelectron spectroscopy. The test results demonstrated that the new NPDS provides a noble coating method for ceramic and metal materials.

Etching Property of the TaN Thin Film using an Inductively Coupled Plasma (유도결합플라즈마를 이용한 TaN 박막의 식각 특성)

  • Um, Doo-Seung;Woo, Jong-Chang;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.104-104
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    • 2009
  • Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

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Growth of Large Area BSTO Thin Films using Pulsed Laser Deposition (펄스레이저 증착법을 이용한 대면적 BSTO 박막의 성장)

  • Kang, Dae-Won;Kwak, Min-Hwan;Kang, Seong-Beom;Paek, Mun-Cheol;Choi, Sang-Kuk;Kim, Sung-Il;Ryu, Han-Cheol;Kim, Ji-Seon;Jeong, Se-Young;Chung, Dong-Chul;Kang, Kwang-Yong;Lee, Beong-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.249-249
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    • 2009
  • We have grown large area BSTO($(Ba_{1-x}Sr_x)TiO_3$) thin films (x=0.4) on 2 inch diameter MgO (001) single crystal substrates using a pulse laser deposition(PLD) system. Substrate temperature and oxygen pressure in the deposition chamber, and the laser optics for ablating a target have been controlled to obtain the uniform thickness and preferred orientation of the films. Results of x-ray diffraction and rocking curve analysis revealed that the BSTO films were grown on MgO substrates with a preferred orientation (002), and the full width half maximum of the rocking curve was measured to be 0.86 degree at optimum condition. Roughness of the films have been measured to be $3.42{\AA}$ rms by using atomic force microscopy. We have successfully deposited the large area BSTO thin films of $4000{\AA}$ thickness on 50 mm diameter MgO substrates.

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Crystal Structure and Physical Property of Tetragonal-like Epitaxial Bismuth Ferrites Film

  • Nam, Joong-Hee;Biegalski, Michael;Christen, Hans M.;Kim, Byung-Ik
    • Proceedings of the Korean Magnestics Society Conference
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    • 2011.06a
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    • pp.7-8
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    • 2011
  • Basically, the lattice mismatch between film and substrate can make those BiFeO3(BFO) films distorted with strain structure. BFO phase can be stabilized on LaAlO3(LAO) represents the example of a multiferroic with giant axial ratio. Its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion and related to the rotation of the oxygen octahedra. In this study, we show that phases with a tetragonal-like epitaxial BFO films can indeed be ferroelectric and also can be stabilized via epitaxial growth onto LAO. Recent reports on epitaxial BFO films show that the crystal structure changes from nearly rhombohedral ("R-like") to nearly tetragonal("T-like") at strains exceeding approximately -4.5%, with the "T-like" structure being characterized by a highly enhanced c/a ratio. While both the "R-like" and the "T-like" phases are monoclinic, our detailed x-ray diffraction results reveal asymmetry change from MA and MC type, respectively. By applying additional strain or by modifying the unit cell volume of the film by substituting Ba for Bi, the monoclinic distortion in the "T-like" MC phase is reduced, i.e. the system approaches a true tetragonal symmetry. There are two different M-H loops for $Bi_{1-x}Ba_xFeO_{3-{\delta}}$(BBFO) and BFO films on SrTiO3(STO) & LAO substrates. Along with the ferroelectric characterization, these magnetic data indicate that the BFO phase stabilized on LAO represents the first example of a multiferroic with giant axial ratio. However, there is a significant difference between this phase and other predicted ferroelectrics with a giant axial ratio: its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion. Therefore, in going from bulk to highly-strained films, a phase sequence of rhombohedral(R)-to-monoclinic ["R-like" MA-to-monoclinic, "T-like" MC-to-tetragonal (T)] is observed. This sequence is otherwise seen only near morphotropic phase boundaries in lead-based solid-solution perovskites (i.e. near a compositionally induced phase instability), where it can be controlled by electric field, temperature, or composition. Our results show that this evolution can occur in a lead-free, stoichiometric material and can be induced by stress alone. Those major results are summarized as follows ; 1) Ba-doping increases the unit cell volume, 2) BBFO on LAO can be fully strained up to x=0.08 as a strain limit (Fig. 1), 3) P(E) & M(H) properties can be tuned by the variation of composition, strain, and film thickness.

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The XPS and SEM Evaluation of Various Technique for Cleansing and Decontamination of The Rough Surface Titanium Implants (수종의 방법으로 임프란트 표면 처치후 표면의 형태 및 성분 변화 분석에 관한 연구)

  • Kim, Sun-bong;Yim, Sung-Bin;Chung, Chin-Hyung
    • Journal of Periodontal and Implant Science
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    • v.31 no.4
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    • pp.749-763
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    • 2001
  • Osseointegrated titanium implants have become an integral therapy for the replacement of teeth lost. For dental implant materials, titanium, hydroxyapatite and alumina oxide have been used, which of them, titanium implants are in wide use today. Titanium is known for its high corrosion resistance and biocompatability, because of the high stability of oxide layer mainly consists of $TiO_2$. With the development of peri-implantitis, the implant surface is changed in surface topography and element composition. None of the treatments for cleaning and detoxification of implant surface is efficient to remove surface contamination from contaminated titanium implants to such extent that the original surface elemental composition. In this sights, the purpose of this study was to evaluate rough surface titanium implants by means of scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy(XPS) with respect to surface appearance and surface elemental composition. Moreover, it was also the aim to get the base for treatments of peri-implantitis. For the SEM and XPS study, rough surface titanium models were fabricated for control group. Six experimental groups were evaluated: 1) long-time room exposure, 2 ) air-powder abrasive cleaning for 1min, 3) burnishing in citric acid(pH1) for 1min, 4) burnishing in citric acid for 3min, 5) burnishing in tetracycline for 1min, 6) burnishing in tetracycline for 3min. All experimental treatments were followed by 1min of rinsing with distilled water. The results were as follows: 1. SEM observations of all experimental groups showed that any changes in surface topography were not detected when compared with control group. (750 X magnification) 2. XPS analysis showed that in all experimental groups, titanium and oxygen were increased and carbon was decreased, when compared with control group. 3. XPS analysis showed that the level of titanium, oxygen and carbon in the experimental group 3(citric acid treatment for 1min, followed by 1min of distilled water irrigation) reached to the level of control group. 4. XPS analysis showed that significant differences were not detected between the experimental group 1 and the other experimental groups except of experimental group 3. The Ti. level of experimental group 2, airpowder abrasive treatment for lmin followed by 1min of saline irrigation, was lower than the Ti. level of tetracycline treated groups, experimental group 5 and 6. From the result of this study, it may be concluded that the 1min of citric acid treatment followed by same time of rinsing with distilled water gave the best results from elemental points of view, and can be used safely to treat peri-implantitis.

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Corrosion Behaviors of Dental Implant Alloy after Micro-sized Surface Modification in Electrolytes Containing Mn Ion

  • Kang, Jung-In;Son, Mee-Kyoung;Choe, Han-Cheol
    • Journal of Korean Dental Science
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    • v.11 no.2
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    • pp.71-81
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    • 2018
  • Purpose: The purpose of this study was to investigate the corrosion behaviors of dental implant alloy after microsized surface modification in electrolytes containing Mn ion. Materials and Methods: $Mn-TiO_2$ coatings were prepared on the Ti-6Al-4V alloy for dental implants using a plasma electrolytic oxidation (PEO) method carried out in electrolytes containing different concentrations of Mn, namely, 0%, 5%, and 20%. Potentiodynamic method was employed to examine the corrosion behaviors, and the alternatingcurrent (AC) impedance behaviors were examined in 0.9% NaCl solution at $36.5^{\circ}C{\pm}1.0^{\circ}C$ using a potentiostat and an electrochemical impedance spectroscope. The potentiodynamic test was performed with a scanning rate of $1.667mV\;s^{-1}$ from -1,500 to 2,000 mV. A frequency range of $10^{-1}$ to $10^5Hz$ was used for the electrochemical impedance spectroscopy (EIS) measurements. The amplitude of the AC signal was 10 mV, and 5 points per decade were used. The morphology and structure of the samples were examined using field-emission scanning electron microscopy and thin-film X-ray diffraction. The elemental analysis was performed using energy-dispersive X-ray spectroscopy. Result: The PEO-treated surface exhibited an irregular pore shape, and the pore size and number of the pores increased with an increase in the Mn concentration. For the PEO-treated surface, a higher corrosion current density ($I_{corr}$) and a lower corrosion potential ($E_{corr}$) was obtained as compared to that of the bulk surface. However, the current density in the passive regions ($I_{pass}$) was found to be more stable for the PEO-treated surface than that of the bulk surface. As the Mn concentration increased, the capacitance values of the outer porous layer and the barrier layer decreased, and the polarization resistance of the barrier layers increased. In the case of the Mn/Ca-P coatings, the corroded surface was found to be covered with corrosion products. Conclusion: It is confirmed that corrosion resistance and polarization resistance of PEO-treated alloy increased as Mn content increased, and PEO-treated surface showed lower current density in the passive region.

Mineralogy and Geochemistry of Quaternary Fault Gouges in the Southeastern Korean Peninsula (한반도 동남부 제4기 단층 비지의 광물학적 및 지구화학적 연구)

  • 손승완;장태우;김영규
    • Journal of the Mineralogical Society of Korea
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    • v.15 no.2
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    • pp.85-94
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    • 2002
  • XRF, XRD, EPMA have been used to investigate microstructures and mineralogical changes caused by the faulting and fluids associated with faulting in the Quaternary fault gouge zones at the Sangchon, Ipsil and Wangsan faults located at the southeastern part of the Korean Peninsula. The chemical compositions of faulted rocks and protoliths analyzed by XRF show that the fault gouges are relatively enriched in TiO$_2$, P$_2$O$_{5}$, MgO, and Fe$_2$O$_3$) compared with protoliths, indicating that the fluids associated with faulting were highly activated. XRD results show that the fault gouges predominantly consist of quartz, feldspar, calcite and clay minerals. Clay minerals formed in the gouge zones are mainly composed of smectite characterized by a dioctahedral sheet. Based on EPMA analyses various kinds of sulfide, carbonate, phosphate minerals were identified in the gouge zones and protoliths. Xenotime of grey fault gouge of the Sangchon fault and sulfide minerals of contact andesitic rock of Ipsil fault and contact grey andesitic rock of Wangsan fault were probably formed by inflow of hydrothermal solution associated with faulting prior to the Quaternary. Carbonate minerals of contact andesitic rock and gouge zone of the Ipsil fault were formed by inflow of fluid associated with faulting prior to the Quaternary. They are heavily fractured and have reaction rim on their edge, indicating that faultings and inflow of fluids were highly activated after carbonate minerals were formed. Calcites of Wangsan fault seemed to be formed in syntectonic or posttectonic Quaternary faulting.g.

Biocompatibility and Surface Characteristics of (Si,Mn)-HA Coated Ti-Alloy by Plasma Electrolytic Oxidation (PEO법으로 (Si,Mn)-HA 코팅된 치과 임플란트용 Ti 합금의 생체적합성 및 표면특성)

  • Gang, Jeong-In;Son, Mi-Gyeong;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.83-83
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    • 2017
  • 생체재료의 표면은 이식과 동시에 생체계면의 역할을 하게 되어, 일련의 생물학적 반응이 시작되고 진행되는 중요한 장소가 된다. 초기에 생체계면에서 일어나는 단백질 흡착이나 염증반응을 비롯한 생물학적 반응들은 궁극적으로 임플란트의 성패를 좌우할 만큼 중요하다. 골융합을 개선하기 위한 다른 방법으로 생체불활성의 타이타늄 (Ti)과 골조직의 능동적인 반응을 이루기 위해 생체활성 표면을 부여함으로서 계면에서의 골형성 반응을 증진시키는 방법이 이용된다. 생체불활성의 Ti과 Ti합금은 골조직과 직접적인 결합을 이루지 못하므로, 골조직과의 반응을 향상하기 위해 여러 종류의 생체활성 재료를 코팅하는 방법이 연구되어 왔고, 이 중 생체의 변화와 가장 유사한 하이드록시아파타이트 코팅이 가장 대중적인 방법으로 사용되었으며 이는 초기 골형성을 촉진하는 것으로 알려졌다. 치과용 임플란트의 표면형상과 화학조성이 골 융합에 영향을 미치는 가장 중요한 인자이므로 최근의 연구동향은 이들 두 가지 표면특성을 결합함으로서 결과적으로 최적의 골세포반응을 유도하고, 골융합 후 골조직과의 micromechanical interlocking에 의해 임플란트의 안정성에 중요한 역할을 하는 마이크론 단위의 표면조도와 표면 구조를 유지하면서, 부가적으로 골 조직 반응을 능동적으로 개선할 수 있는 생체활성 성분을 부여하여 골 융합에 상승효과를 이루기 위한 표면처리법에 관해 많은 연구가 요구되어지고 있다. 따라서 골을 구하는 원소인 망간과 실리콘으로 치환된 하이드록시아파타이트를 플라즈마 전해 산화법으로 코팅하여 세포와 잘 결합할 수 있는 표면을 제공함으로써 골 융합과 치유기간을 단축시킬 수 있을 것으로 사료된다. 실험방법은 시편은 치과 임플란트 제작 합금인 Ti-6Al-4V ELI disk (grade 5, Timet Co., USA; diameter, 10 mm, thickness, 3 mm)이며, calcium acetate monohydrate, calcium glycerophosphate, manganese(II) acetate tetrahydrate, sodium metasilicate을 설계조건에 따라 혼합 제조된 전해질 용액을 이용하여 플라즈마 전해 산화법으로 표면 코팅을 실시하였다. 각 시편의 플라즈마 전해시 전압은 280V로 인가하였고, 전류밀도는 70mA로 정전류를 공급하여 해당 인가전압 도달 후 3분 동안 정전압 방식을 유지하였다. 코팅된 피막 표면을 주사전자현미경과 X-선 회절분석을 통하여 미세구조 및 결정상을 관찰하였다. 또한 코팅된 표면의 생체활성 평가는 정량적으로 평가하기 위해 동전위시험과 AC 임피던스를 통하여 시행하였다. 분극거동을 확인하기 위해 potentiostat (Model PARSTAT 2273, EG&G, USA)을 이용하여 구강 내 환경과 유사한 $36.5{\pm}1^{\circ}C$의 0.9 wt.% NaCl에서 실시하였다. 전기화학적 부식 거동은 potentiodynamic 방법으로 조사하였고 인가전위는 -1500 mV에서 2000 mV까지 분당 1.67 mV/min 의 주사속도로 인가하여 시험을 수행하였다. 임피던스 측정은 potentiostat (Model PARSTAT 2273, EG&G, USA)을 이용하였으며, 측정에 사용한 주파수 영역은 10mHz ~ 100kHz 까지의 범위로 하여 조사하였고 ZSimWin(Princeton applied Research, USA) 소프트웨어를 사용하여 용액의 저항, 분극 저항 값을 산출하였다. 망간의 함량이 증가할수록 불규칙한 기공을 보였으며, 실리콘은 $TiO_2$ 산화막 형성을 저해하는 경향을 확인할 수 있었다. 단독으로 표면을 처리한 경우보다 두 가지 원소를 이용해 복합 표면처리를 시행한 경우가 내식성이 좋아 임플란트과의 골 유착에 긍정적인 영향을 미칠 것으로 사료된다.

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Impedance Spectroscopy Analysis of the Screen Printed Thick Films (스크린 프린트된 후막의 Impedance Spectroscopy 특성 분석)

  • Ham, Yong-Su;Moon, Sang-Ho;Nam, Song-Min;Lee, Young-Hie;Koh, Jung-Hyuk;Jyoung, Soon-Jong;Kim, Min-Soo;Cho, Kyung-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.6
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    • pp.477-480
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    • 2010
  • In this study, we fabricate 3 wt% $Li_2CO_3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd bottom electrode printed $Al_2O_3$ substrates for the LTCCs (low temperature co-fired ceramics) applications. From the X-ray diffraction analysis, 3 wt% $Li_2CO_3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at $900^{\circ}C$, showed perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO_3$ doped BST thick films, we employ the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 20 Hz to 1 MHz at the various temperatures.

Effect of double pinning mechanism in BSO-added GdBa2Cu3O7-x thin films

  • Oh, J.Y.;Jeon, H.K.;Lee, J.M.;Kang, W.N.;Kang, B.
    • Progress in Superconductivity and Cryogenics
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    • v.19 no.3
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    • pp.13-17
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    • 2017
  • We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.