• 제목/요약/키워드: $TiOF_2$

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$TiO_2$ 수열코팅에 의한 흑연의 표면 개질 (Modification of Graphite Surface By the Hydrothermal Coating of $TiO_2$)

  • 최승도;박병규
    • 한국결정학회지
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    • 제8권2호
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    • pp.154-159
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    • 1997
  • 0.2M TiCl4 수용액에 특수열 코팅 처리하여 TiO2 코팅된 흑연 분말 표면의 개질에 관하여 연구하였다. 35℃ 반응온도에서 TiO2 rutile상이 흑연 분말에 코팅되엇다. 코팅된 흑연 분말은 물에 대한 친수성이 증가하였다. 반응온도가 60℃로 증가함에 따라 코팅되는 TiO2의 양도 증가하였다. TiO2 코팅된 흑연 분말의 산화시작온도는 30'C 정도 증가하였고 최종감량효과도 30%이상 증가하였다.

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$TiCl_4/AlCl_3/N_2/Ar/H_2$ 반응계를 사용하는 플라즈마화학증착법에 의한 $Ti_{1-x}Al_xN$ 박막의 구조분석 및 물성 (Structural Analyses and Properties of $Ti_{1-x}Al_xN$ Films Deposited by PACVD Using a $TiCl_4/AlCl_3/N_2/Ar/H_2$ Gas Mixture)

  • 김광호;이성호
    • 한국세라믹학회지
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    • 제32권7호
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    • pp.809-816
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    • 1995
  • Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

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열처리된 SiO$_{2}$/TiW 구조의 계면 특성 (The interfacial properties of th eanneled SiO$_{2}$/TiW structure)

  • 이재성;박형호;이정희;이용현
    • 전자공학회논문지A
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    • 제33A권3호
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    • pp.117-125
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    • 1996
  • The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

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$ThMn_{12}$형 Sm-Fe-Ti 급냉응고리본의 미세구조 및 자기특성 (Microstructures and Magnetic Properties of $ThMn_{l2}-type$ Sm-Fe-Ti Melt-Spun Ribbons)

  • 김윤배;유권상;김동환;김창석
    • 한국자기학회지
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    • 제1권1호
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    • pp.25-29
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    • 1991
  • 단롤법 급냉응고장치를 이용하여 디스크 표면속도 40m/s로 Sm-Fe-Ti 리본시편을 제작하하고 이의 결정구조 및 자기특성을 조사하였다. 급낸응고상태에서 $Sm_{x}Fe_{100-x-y}Ti_{y}(3.8{\leq}x{\leq}11.5,\;3.8{\leq}y{\leq}19.2)$ 합금은 전 조성에 걸쳐 $TbCu_{7}-type$ 구조의 준안정상이 형성되고 조성에 따라 ${\alpha}-(Fe,\;Ti),\;Fe_{2}Ti$. 비정질 및 $d=2.14{\AA}$에 강한 회절선을 나타내는 미지의 상 등이 존재함을 알 수 있었다. 한편, 급냉응고에 의하여 생성된 이들 $TbCu_{7}-type$ 구조의 준안정상은 $850^{\circ}C$에서 45분간 열처리한 후에도 완전하게 안전상으로 변태되지 않았으나 $SmFe_{11}Ti$ 조성에서는 거의 완전한 변태가 이루어짐을 알 수 있었다. 최적조건($850^{\circ}C{\times}45분$)으로 열처리한 $SmFe_{11}Ti$ 급냉응고리본은 주상인 $ThMn_{12}$ 구조의 경자성상과 연자성상인 $\alpha$-(Fe, Ti) 및 반강자성 $Fe_{2}Ti$ 등으로 구성되어 있었으며, $\alpha$-(Fe, Ti) 및 $Fe_{2}Ti$의 생성은 열처리시 Sm 원자의 증발에 기인한 것으로 판명되었다. 최적조건으로 열처리한 $SmFe_{11}Ti$ 급냉응고리본의 표면 및 내부 조성에 대한 원자비율은 각각 $SmFe_{25.8}Ti_{2.6}$$SmFe_{11.7}Ti_{1.0}$이었으며, $\alpha$-(Fe, Ti) 및 $Fe_{2}Ti$의 대부분은 리본의 표면층에 존재하는 것으로 관찰되었다.

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공침법에 의한 $BaTi_4O_9, Ba_2Ti_9O_{20}$$BaTi_5O_{11}$화합물의 합성 및 그의 전기적, 열적 특성 (Synthesis of $BaTi_4O_9, Ba_2Ti_9O_{20}$ and $BaTi_5O_{11}$ Compounds by Coprecipitation Method and Their Electrical and Thermal Properties)

  • 김종옥;손우창;전성용;이경희;이병하
    • 한국세라믹학회지
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    • 제31권9호
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    • pp.1005-1011
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    • 1994
  • The three different composition of BaTi4O9, Ba2Ti9O20 and BaTi5O11 were prepared by coprecipitation process, and then the dielectric properties of these compounds were measured at low microwave frequencies. The powder showing high level of purity was synthesised by the coprecipition reaction of BaCl2 and TiCl4 where (NH4)2CO3 and NH4OH were used as a deflocculent. Followings are the result of this study: 1. The sintering temperature increased with increasing TiO2 content. 2. BaTi4O9 powder were synthesized as a single phase by this processing technique, but the resultant Ba2Ti9O20 and BaTi5O11 phase existed with Ba2Ti9O20 and BaTi5O11 phases. 3. Single phase BaTi4O9 showed high dielectric constant value of 35, high Q value of 8100.

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Ti-naphthenate의 코팅-열분해에 의한$TiO_2$ 박막의 제조 (Preparation of $TiO_2$ thin films by coating-pyrolysis process of Ti-naphthenate)

  • 김진영;김승원;장우석;김현태;최상원
    • 한국결정성장학회지
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    • 제12권1호
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    • pp.7-10
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    • 2002
  • $TiO_2$ 박막을 금속유기화합물인 Titanium-naphthenate의 코팅-열분해법으로 제조하였다. 출발물질은 Ti-naphthenate를 toluene에 희석한 용액을 사용하였으며 기판은 slide glass를 사용하였다 Titanium-naphthenate 용액을 spin-coating법으로 기판에 코팅하고 $450^{\circ}C$에서 열터리하여 $TiO_2$ 박막을 제조하였다 제조한 박막의 특성을 UV/Vis, XRD 및 SEM 등으로 박막의 투과율, 굴절률, 결정상 및 표면 형상을 분석하였다. Slide glass 위에 제조한 TiO$_2$ 박막은 투과율은 70~90%이며 420nm에서의 굴절율은 2.7이었다. $TiO_2$박막은 anatase상을 나타내었고 실타래 형상의 주름을 가진 표면을 나타내었다

HAP/TiO2 여재를 이용한 Reactive Black 5(RB5)의 광촉매 반응과 흡착 (Photocatalysis and Adsorption of Reactive Black 5(RB5) by HAP/TiO2 Media)

  • 천석영;장순웅
    • 한국지반환경공학회 논문집
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    • 제12권11호
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    • pp.31-37
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    • 2011
  • 본 연구는 Hydroxyapatite(HAP)/$TiO_{2}$ 여재에 의한 Reactive Black 5(RB5)의 흡착과 광촉매 반응을 조사하였다. RB5에 대한 $TiO_{2}$, HAP와 $TiO_{2}$/HAP의 흡착은 연속적인 회분식 실험을 통해 조사하였다. 흡착평형에 따른 결과를 나타내었으며 Langmuir와 Freundlich isotherm model을 사용하여 적용성을 조사하였다. $TiO_{2}$, HAP와 $TiO_{2}$/HAP 흡착제별 흡착평형 결과는 Langmuir isotherm model에 적합하였으며 최대흡착량(Qmax)의 값은 각각 단일 $TiO_{2}$는 5.28mg/g, 단일 HAP는 12.45mg/g, $TiO_{2}$/HAP는 9.03mg/g으로 나타났다. 흡착과 광촉매 반응에 대한 kinetic model들은 유사 1차 반응을 통해 분석하였으며, 이들 model에 따르면 $TiO_{2}$/HAP에 의한 RB5 제거는 광촉매 반응과 흡착반응의 상호작용의 영향을 받는 것으로 나타났다.

질소 분위기에서 순간역처리에 의해 형성시킨 $TiN/TiSi_2$ Contact Bsrrier Lauer의 특성 (Characteristics of $TiN/TiSi_2$ Contact Barrier Layer by Rapid Thermal Anneal in $N_2$ Ambient)

  • 이철진;허윤종;성영권
    • 대한전기학회논문지
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    • 제41권6호
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    • pp.633-639
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    • 1992
  • The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

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TiN 이온 플레이팅한 강판의 내식성에 관한 연구(I)-Ti 하지 코팅 및 TiN 코팅 두께의 영향 (Corrosion Behavior of TiN Ion Plated Steel Plate(I)-Effects of Ti interlayer and TiN coating thickness)

  • 연윤모;한전건;김대진;배은현
    • 한국표면공학회지
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    • 제24권1호
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    • pp.34-34
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    • 1991
  • Corrosion behavior of TiN coated steel was studied in terms of thickness of interlayer Ti and TiN coating TiN was are ion plated to a thickness of 1$\mu\textrm{m}$ and 2$\mu\textrm{m}$ respectively with interlayer coating of Ti of 1$\mu\textrm{m}$, 2$\mu\textrm{m}$ and 3$\mu\textrm{m}$. Corrosion resistance of TiN coated steel was evaluated by anodic palarization test in 1N H2SO4 as well as salt spray test. Porosity of each coating was also tested by using SO2 test method. Corrosion current density decreased with increasing TiN coating thickness and Ti interlayer coating markedly enhanced the corrosion resistance. Ti interlayer coating of 2$\mu\textrm{m}$ and 3$\mu\textrm{m}$ prior to 2$\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 2. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ti interlayer. Ti interlayer coating was also very effective in improvement of corrosion resistance under salt atmosphere.

TiN 이온 플레이팅한 강판의 내식성에 관한 연구(I) - Ti 하지 코팅 및 TiN 코팅 두께의 영향 - (Corrosion Behavior of TiN Ion Plated Steel Plate(I) -Effects of Ti interlayer and TiN coating thickness-)

  • 연윤모;한전건;김대진;배은현
    • 한국표면공학회지
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    • 제25권1호
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    • pp.34-39
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    • 1992
  • Corrosion behavior of TiN coated steel was studied in terms of thickness of interlayer Ti and TiN coating. TiN was arc ion plated to a thickness of 1$\mu\textrm{m}$ and 2$\mu\textrm{m}$ respectively with interlayer coating of Ti of 1$\mu\textrm{m}$, $2\mu\textrm{m}$ and $3\mu\textrm{m}$. Corrosion resistance of TiN coated steel was evaluated by anodic palarization test in 1N $H_2$SO$_4$ as well as salt spray test. Porosity of each coating was also tested by using $SO_2$ test method. Corrosion current density decreased with increasing TiN coating thickness and Ti interlayer coating markedly enhanced the corrosion resistance. Ti interlayer coating of $2\mu\textrm{m}$ and $3\mu\textrm{m}$ prior to $2\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 2. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ti interlayer. Ti interlayer coating was also very effective in improvement of corrosion resistance under salt atmosphere.

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