• 한국표면공학회지
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• 제35권6호
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• pp.383-390
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• 2002

To investigate behaviors of Ti and O elements and microstructures of anodic titanium oxide films, the films were prepared by anodizing pure titanium in $H_2$S $O_4$, $H_3$P $O_4$, and $H_2O$$_2$ mixed solution at 180V. The microstructures and chemical states of the elements were analyzed using SEM, X-ray mapping, AFM, XRD, XPS (depth profile). The films formed on a titanium substrate showed porous layers which were composed of pore and wall, And with increasing anodizing time a hexagonal shape of cell structures were dominant and solace roughness increased. From the XRD result the structure of the Ti $O_2$ layer was anatase type of crystal on the whole. In the XPS spectra it was found that Ti and O were chemically binded in forms of Ti $O_2$, TiOH, $Ti_2$ $O_3$ at Ti 2p, and Ti $O_2$, $Ti_2$ $O_3$, $P_2$ $O_{5}$, S $O_4^{2-}$ at O ls respectively. Concentration of Ti $O_2$ decreased as the depth increased from the surface of the oxide film towards the substrate, but to the contrary concentrations of TiOH and $Ti_2$ $O_3$ increased.d.

• 한국주조공학회지
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• 제20권3호
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• pp.208-215
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• 2000

The mechanical properties and corrosion resistance of Ti alloys for medical implants have been investigated. Ti, Ti-15Sn-4Nb and Ti-15Sn-4Nb-2Zr alloys were melted in arc furnace and the corrosion resistance of Ti alloys was evaluated by anodic polarization test. The microstructure and mechanical properties of Ti alloys were analysed by optical microscope, hardness and tensile tester. The tensile strength of the pure-Ti improved by addition of Sn and Nb and Ti-15Sn-4Nb alloy showed better Rockwell hardness compared with pure Ti. However, there was no significant difference in corrosion resistance between thoseTi-alloys made of Pure-Ti and Ti-15Sn-4Nb alloy. The passive films on the Ti-15Sn-4Nb alloy in air atmosphere consisted of $TiO_2$, SnO and NbO as demonstrated by X-ray photoelectron spectroscopy(XPS)

• 한국세라믹학회지
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• 제32권7호
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• 한국재료학회지
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• 제9권11호
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• pp.1062-1068
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• 1999

고정원으로부터 배출되는 질소산화물의 저감 기술 중에서 선택적 촉매 환원법(SCR법)은 가장 경제적이고 효율적인 방법으로 알려져 있다. 이 SCR 촉매의 탈질능을 향상시키기 위하여,$ TiOSO_4$ 및 Ti($SO_4$)$_2$용액으로부터 비표면적이 넓은 $TiO_2$의 비표면적 및 결정구조에 미치는 영향과 이들의 상관관계에 대하여 조사하였다. $TiOSO_4$용액으로부터 합성한 $TiO_2$의 최대 비표면적은 $382\m^2$/g이었고, Ti($SO_4$)$_2$용액으로부터 합성한 $TiO_2$의 최대 비표면적은 $335\m^2$/g이었으며, $TiO_2$는 비정질 형태의 결정구조를 보였다. 하소처리에 의해 비정질 $TiO_2$는 결정화되었고, 결정 중에 함유되어 있는 불순물은 $TiO_2$의 결정화를 억제하였다.

• 한국분말재료학회지
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• 제6권1호
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• pp.103-110
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• 1999

Different sizes of Si powder and milling medium materials (steel and partially stabilized zirconia (PSZ)) were used to synthesize $Ti_3Si$ and $TiSi_2$ by mechanical aollying (MA) of Ti-25.0.at.%Si and Ti-66.7at.% Si powder mixtures. the formation of each titanium silicide did not occur even after 360 min of MA of as-re-ceived Si and Ti powder mixtures due to the lack of homogeneity. $Ti_3Si$, however, was synthesized after 240 min of MA of Ti and 60 min-premilled Si powder mixture. ${\alpha}-TiSi_2$ and $TiSi_2$ were produced by jar milling of Ti and 60 min-premilled Si powder mixture for 48 hr and high -energy PSZ ball-milling in a steel vial for 360 min. The formation of each titanium silicide was characterized by a slow reaction rate as the reactants and product(s) coexisted for a certain period of time. The formation of $Ti_3Si$ and $TiSi_2$ and the reaction rates appeared to be influenced by the Si particle size, the homogeneity of the powder mixtures and the milling medium materials.

• 한국분말재료학회지
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• 제6권1호
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• pp.42-48
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• 1999

Three mixtures of elemental powders of Al-25at.%Ti, 48at.%Ti and 70at.%Ti were offered to ball milling process for the formation of intermetallic compounds of $Al_3Ti$, AlTi and $Ti_3Al$. Ballmilling or attrition process were carried out at the condition of rotaing speed of 110 or 350 rpm at $10^{-3}$ torr vacuum or argon atmospheres. $Al_3Ti$phases were fully obtained by heat treatment for 1 hors at $600^{\circ}C$ with Al-25at.%Ti composition mixtures milled by 100 hours. The amorphous phase was completely formed at the composition of Al-48at.%Ti mixed powders by milling 100hours at the 50 to 1 weight ratio of ball to powder, and AlTi compounds were obtained by heat treament. In the case of Al-70at%Ti mixed powders milled for 100 hours, $Ti_3Al$ and $Al_3Ti$intermetallic compounds were formed by heat treatment for 1 hour at $600^{\circ}C$. By attrition milling of 350rpm for 10 hours, $Ti_3Al$ phase was formed completley after heat treatment for 1 hour at $600^{\circ}C$.

• 한국세라믹학회지
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• 제37권11호
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• pp.1114-1118
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• 2000

Ti 및 C 입자로 이루어진 다공질 성형체에 용융 Si의 침윤 및 반응으로 새로운 Ti$_3$SiC$_2$합성공정이 개발되었다. 용융 Si 침윤에 의한 Ti$_3$SiC$_2$합성공정에서는 이제까지 연구된 합성방법 보다 넓은 조성 범위에서 Ti$_3$SiC$_2$의 합성이 이루어졌다. 용융 Si을 활성 매질로 사용한 Ti$_3$SiC$_2$의 합성에서는 성형체 조성, 원료 입자 크기 및 침윤되는 용융 Si의 양에 따라 합성되는 상 및 각 합성상의 양이 다르게 나타났다. Ti:Si:C=3:1:6 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$상이 합성되었으며, 일부 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$, TiC 및 SiC가 함께 합성되었다. 작은 Ti 입자로 이루어진 성형체를 사용하여 합성한 시편에서 Ti$_3$SiC$_2$상의 합성이 용이하게 이루어졌으며, 성형체 조성 및 침윤되는 Si의 양이 화학양론적으로 Ti$_3$SiC$_2$에 근접한 조성을 갖는 시편에서 Ti$_3$SiC$_2$를 높은 수율로 합성할 수 있었다.

• 한국재료학회지
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• 제18권1호
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• pp.51-56
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• 2008

The crystal structures and morphologies of precipitates in $L1_0$-ordered TiAl intermetallics containing nitrogen were investigated by transmission electron microscopy (TEM). Under aging at an approximate temperature of 1073 K after quenching from 1423 K, TiAl hardens appreciably due to the nitride precipitation. TEM observations revealed that needle-like precipitates, which lie only in one direction parallel to the [001] axis of the $L1_0$-TiAl matrix, appear in the matrix preferentially at the dislocations. Selected area electron diffraction (SAED) pattern analyses showed that the needle-shaped precipitate is perovskite-type $Ti_3AlN$ (P-phase). The orientation relationship between the P-phase and the $L1_0$-TiAl matrix was found to be $(001)_P//(001)_{TiAl}\;and\;[010]_P//[010]_{TiAl}$. By aging at higher temperatures or for longer periods at 1073 K, plate-like precipitates of $Ti_2AlN$ (H-phase) with a hexagonal structure formed on the {111} planes of the $L1_0$-TiAl matrix. The orientation relationship between the $Ti_2AlN$ and the $L1_0$-TiAl matrix is $(0001)_H//(111)_{TiAl}\;and\;_H//_{TiAl}$.

• 한국표면공학회지
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• 제25권5호
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• pp.235-252
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

• 한국재료학회지
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• 제31권2호
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.