• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1404-1406
• /
• 1998

The outdoor polymeric insulating materials such as silicone rubber, ethylene propylene diene monomer(EPDM), ethylene vinyl acetate(EVA) and epoxy are aged by various natural environment with the long-term performance in outdoor. In this paper, the effects of UV-ray on surface of silicone rubber were investigated by using the weather-Ometer. The accelerated aging stresses were simulated by UV radiation. high temperature and humidity as well as water spray. These the aging characteristics were examined through contact angle measurements, tracking resistance test, FT-IR and SEM/EDS analysis. the experimental results showed that tracking resistance decreases with increase in the UV-ray irradiation period. But the surface of silicone rubber kept hydrophobicity. It is found that the inorganic filler such as $Al(OH)_3$ improves tracking resistance and the $TiO_2$ is very effective in preventing degradation of silicone rubber surface from UV-ray.

• The Journal of Information Technology
• /
• v.5 no.4
• /
• pp.139-144
• /
• 2002

In this study, acrylic water-soluble coatings were prepared by the white pigment($TiO_2$) and acrylic resin. The basic properties of acrylic water-soluble coatings were measured, and the maintenance of perfume(lemon) was investigated by FT-IR spectrophotometer and sensory test.

• The Journal of Information Technology
• /
• v.7 no.1
• /
• pp.105-110
• /
• 2004

In this study, acrylic water-soluble coatings were prepared by the white pigment($TiO_2$) and acrylic resin. The basic properties of acrylic water-soluble coatings were measured, and the maintenance of perfume was investigated by FT-IR spectrophotometer and sensory test.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.390-390
• /
• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.257-257
• /
• 2007

고밀도 FeRAM (Ferroe!ectric Random Access Memory) 소자를 개발하기 위해서는 강유전체 물질을 이용한 안정적인 스텍형의 커패시터 개발이 필수적이다. 특히 $(Bi,La)_4Ti_3O_{12}$ (BLT) 강유전체 물질을 이용하는 경우에는 낮은 열처리 온도에서도 균질하고 높은 값의 잔류 분극 값을 확보하는 것이 가장 중요한 과제 중의 하나이다. 불행히도, BLT 물질은 a-축으로는 약 $50\;{\mu}C/cm^2$ 정도의 높은 잔류 분극 값을 갖지만, c-축 방향으로는 $4\;{\mu}C/cm^2$ 정도의 낮은 잔류 분극 값을 나타내는 동의 강한 비등방성 특성을 보인다. 따라서 BLT 박막에서 각각 입자들의 크기 및 결정 방향성을 세밀하게 제어하는 것은 무엇보다 중요하다. 본 연구에서는 16 Mb의 1T/1C (1-transistor/1-capacitor) 형의 FeRAM 소자를 BLT 박막을 적용하여 제작하였다. 솔-젤 (sol-gel) 용액을 이용하여 스핀코팅법으로 BLT 박막을 증착하고, 후속 열처리 공정을 RTP (rapid thermal process) 공정을 이용하여 수행하였다. 커패시터의 하부 전극 및 상부 전극은 각각 Pt/IrOx/lr 및 Pt을 적용하였다. 반응성 이온 에칭 (RIE: reactive ion etching) 공정을 이용하여 커패시터를 형성시킨 후, 32k-array (unit capacitor: $0.68\;{\mu}m$) 패턴에서 측정한 스위칭 분극 (dP=P*-P^) 값은 약 $16\;{\mu}C/cm^2$ 정도이고, 웨이퍼 내에서의 균일도도 2.8% 정도로 매우 우수한 특성을 보였다. 그러나 단위 셀들의 특성을 평가하기 위하여 bit-line의 전압을 측정한 결과, 약 10% 정도의 커패시터에서 불량이 발생하였다. 그리고 이러한 불량 젤들은 매우 불규칙적으로 분포함을 확인할 수 있었다. 이러한 불량 원인을 파악하기 위하여 양호한 젤과 불량이 발생한 셀에서의 BLT 박막의 미세구조를 분석하였다. 양호한 셀의 BLT 박막 입자들은 불량한 셀에 비하여 작고 비교적 균일한 크기를 갖고 있었다. 이에 비하여 불량한 셀에서의 BLT 박막에는 과대 성장한 입자들이 존재하고 이에 따라서 입자 크기가 매우 불균질한 것으로 확인되었다. 또 이러한 과대 성장한 입자들은 거의 모두 c-축 배향성을 나타내었다. 이상의 실험 결과들로부터, BLT 박막을 이용하여 제작한 FeRAM 소자에서 발생하는 불규칙한 셀 불량의 주된 원인은 c-축 배향성을 갖는 과대 성장한 입자의 생성임을 알 수 있었다. 즉 BLT 박막을 이용하여 FeRAM 소자를 제작하는 경우, 균일한 크기의 입자 및 c-축 배향성의 입자 억제가 매우 중요한 기술적 요소임을 알 수 있었다.

• Journal of the Korean Society for Heat Treatment
• /
• v.33 no.3
• /
• pp.124-128
• /
• 2020

Recently, many studies on growth of single crystal diamond using MPECVD have been conducted. The heteroepitaxial method is one of the methods for growing diamonds on a large-area substrate, and research on synthesis of single crystal diamonds using SrTiO₃, MgO, and sapphire substrates has been attempted. In addition, research is being conducted to reduce the internal stress generated during diamond growth and to improve the crystallinity of the diamond. The compressive stress generated therein causes peeling and bowing from the substrate. This study aimed to synthesize heteroepitaxial single crystal diamonds with high crystallinity by surface modification. A diamond thin film was first grown on a sapphire/Ir substrate by MPECVD, and then etched with H₂ gas to modified the morphology and roughness of the surface. A secondary diamond layer was grown on the surface, and the internal stress, crystallinity of the diamond were investigated. As a result, the fabrication of single crystal diamonds with improved crystallinity was confirmed.

• Journal of Korean Society of Environmental Engineers
• /
• v.38 no.6
• /
• pp.291-298
• /
• 2016

Electrochemical water treatment process as a useful treatment method for the removal of non-degradable matter has been consistently studied for several decades. Key process of electrochemical water treatment are oxidation reaction from an anode and reduction from a cathode. In this study, the effect of pre-treatment methods in the insoluble electrode manufacturing process for the water treatment has been evaluated for the life time of electrode The results of this study showed that pre-treatment methods of a base metal such as surface roughness, clean method and interlayer formation influenced to life time of electrode when the same condition (catalyst electrode layer coating method and material system) was applied for pre-treatment methods. This study was conducted by using $IrO_2/Ti$ electrode In the test of sand-blasting process, an electrode manufactured by using sanding media of different sizes resulted in the most effective electrode life time when the size of alumina was used for $212{\sim}180{\mu}m$ praticle size (#80). The most effective method was considered using arc plasma in the additional roughness control and cleaning process, sputtering method to form Ta type interlayer formation process.

• Journal of the Korean Applied Science and Technology
• /
• v.35 no.4
• /
• pp.1197-1205
• /
• 2018

UV protection cosmetics belong to functional cosmetics and contain organic or inorganic UV blocking pigments. The inorganic UV blocking pigments are mainly zinc oxide and titanium dioxide. It is known that inorganic UV blocking pigment has a diameter of 60 to 100 nm and has good blocking ability of UVA and UVB. Also, it has high inactivity against sunlight including UV and is excellent in safety. In addition, it is not absorbed or accumulated on the skin like organic pigments and does not cause skin irritation or allergy. In this study, mica, a plate-shaped inorganic pigment, nanosized titanium dioxide, an UV blocking material, and hydrophobic silica were surface-treated with surfactants. And then, titanium dioxide nanoparticles and silica were physically adsorbed on the mica by non-chemical mutual attraction due to differences in charge. Thereafter, the mica complex was surface-treated with silane to prepare a hydrophobic UV blocking pigment complex. The plate-shaped UV blocking composite improves the cohesiveness of a general nanoparticle material titanium dioxide, enhances UV blocking effect due to uniform dispersion, and can greatly improve dispersion stability in cosmetic formulations by surface treatment with hydrophobic property. The surface charge of the pigment was evaluated by zeta potential. The properties of the UV blocking pigment complex were evaluated by FE-SEM, XRD, FT-IR and UV-VIS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.3
• /
• pp.192-197
• /
• 2016

A novel heteroleptic ruthenium(II) complex bearing a 4-picolinic acid unit as anchoring ligands (trans-dithiocyanato bis(4-picolinic acid)ruthenium(II) (trans-H1)) was synthesized and its chemical structure was identified by $^1H$-NMR, FT-IR and mass spectroscopy. The optical, thermal, electrochemical and dye adsorption properties of trans-H1 dye were investigated and compared with those of the gold standard ruthenium complex, Ru(4,4'-dicarboxy-2,2'-bipyridine)$_2cis(NCS)_2$ (N3). DSSCs based on trans-H1 dyes were examined under the illumination of AM 1.5 G, $100mWcm^{-2}$ and exhibited typical photovoltaic properties with an open-circuit voltage ($V_{OC}$) of 0.46 V, a short-circuit current ($J_{SC}$) of $4.10mA{\cdot}cm^{-2}$, a fill factor (FF) of 60.4%, and a conversion efficiency (PCE) of 1.14%.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.10
• /
• pp.35-42
• /
• 2002

Modulation frequency dependences of the pyroelectric properties of PLT (P $b_{1-x}$ L $a_{x}$ $Ti_{1-x}$ 4/ $O_3$) thin films with La concentrations of 5, 10 and 15㏖% have been investigated by using the dynamic method. The PLT thin film with 10㏖% of the La concentration (PLT(10) thin film) shows the most excellent pyroelectric properties among the films. For PLT(10) thin film, the pyroelectric coefficient shows the maximum value of 6.6$\times$10$^{-9}$ C/$\textrm{cm}^2$ㆍK without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03$\times$10$^{-11}$ Cㆍcm/J and 1.46$\times$10$^{-9}$ Cㆍcm/J, respectively. Voltage responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional to frequency at high modulation frequency. Voltage responsivity is 5.15 V/W at 8Hz. Noise equivalent power (NEP) and specific detectivity ( $D^{*}$) of the PLT(10) thin film are 9.93$\times$10$^{-8}$ W/H $z^{1}$2/ and 1.81$\times$10$^{6}$ cmH $z^{1}$2/W at the frequency of 100Hz, respectively. The results indicate that PLT(10) thin film is very suitable for pyroelectric IR sensors.s.s.