• Korean Journal of Mineralogy and Petrology
• /
• v.33 no.3
• /
• pp.195-214
• /
• 2020

The Samgwang Au-Ag deposit has been one of the largest deposits in Korea. The deposit consists of eight lens-shaped quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock, which feature suggest that it is an orogenic-type deposit. The Ti-bearing minerals occur in wallrock (titanite, ilmenite and rutile) and laminated quartz vein (rutile). They occur minerals including biotite, muscovite, chlorite, white mica, monazite, zircon, apatite in wallrock and white mica, chlorite, arsenopyrite in laminated quartz vein. Chemical composition of titanite has maximum vaules of 3.94 wt.% (Al₂O₃), 0.49 wt.% (FeO), 0.52 wt.% (Nb₂O₅), 0.46 wt.% (Y₂O₃) and 0.43 wt.% (V₂O₅). Titanite with 0.06~0.14 (Fe/Al ratio) and 0.06~0.15 (X_Al (=Al/Al+Fe³⁺+Ti)) corresponds with metamorphic origin and low-Al variety. Chemical composition of ilmenite has maximum values of 0.07 wt.% (ZrO₂), 0.12 wt.% (HfO₂), 0.26 wt.% (Nb₂O₅), 0.04 wt.% (Sb₂O₅), 0.13 wt.% (Ta₂O₅), 2.62 wt.% (As₂O₅), 0.29 wt.% (V₂O₅), 0.12 wt.% (Al₂O₃) and 1.59 wt.% (ZnO). Chemical composition of rutile in wallrock and laminated quartz vein has maximum values of 0.35 wt.%, 0.65 wt.% (HfO₂), 2.52 wt.%, 0.19 wt.% (WO₃), 1.28 wt.%, 1.71 wt.% (Nb₂O₃), 0.03 wt.%, 0.07 wt.% (Sb₂O₃), 0.28 wt.%, 0.21 wt.% (As₂O₅), 0.68 wt.%, 0.70 wt.% (V₂O₃), 0.48 wt.%, 0.59 wt.% (Cr₂O₃), 0.70 wt.%, 1.90 wt.% (Al₂O₃) and 4.76 wt.%, 3.17 wt.% (FeO), respectively. Rutile in laminated quartz vein is higher contents (HfO₂, Nb₂O₃, As₂O₅, Cr₂O₃, Al₂O₃ and FeO) and lower content (WO₃) than rutile in wallrock. The substitutions of rutile in wallrock and laminated quatz vein are as followed : rutile in wallrock [(Fe³⁺, Al³⁺, Cr³⁺) + Hf⁴⁺ + (W⁵⁺, As⁵⁺, Nb⁵⁺) ⟵⟶ 2Ti⁴⁺ + V⁴⁺, 2Fe²⁺ + (Al³⁺, Cr³⁺) + Hf⁴⁺ + (W⁵⁺, As⁵⁺, Nb⁵⁺) ⟵⟶ 2Ti⁴⁺ + 2V⁴⁺], rutile in laminated quartz vein [(Fe³⁺, Al³⁺) + As⁵⁺ ⟵⟶ Ti⁴⁺ + V⁴⁺, (Fe³⁺, Al³⁺) + As⁵⁺ ⟵⟶ Ti⁴⁺ + Hf⁴⁺, 4(Fe³⁺, Al³⁺) ⟵⟶ Ti⁴⁺ + (W⁵⁺, Nb⁵⁺) + Cr³⁺], respectively. Based on these data, titanite, ilmenite and rutile in wallrock were formed by resolution and reconcentration of cations (W⁵⁺, Nb⁵⁺, As⁵⁺, Hf⁴⁺, V⁴⁺, Cr³⁺, Al³⁺, Fe³⁺, Fe²⁺) in minerals of wallrock during regional metamorphism. And then rutile in laminated quartz vein was formed by reconcentration of cations (Nb⁵⁺, As⁵⁺, Hf⁴⁺, Cr³⁺, Al³⁺, Fe³⁺, Fe²⁺) in alteration minerals (white mica, chlorite) and Ti-bearing minerals reaction between hydrothermal fluid originated during ductile shear and Ti-bearing minerals (titanite, ilmenite and rutile) in wallrock.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.8
• /
• pp.335-339
• /
• 2002

Ba(Mgl-xCox)TaO3[BMCT] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of 1525~$1625^{\circ}C$ for 5hr. in air. The crystal structure of BMCT ceramics was investigated by the XRD. The microstructure of the specimens were observed by SEM. The Microwave dielectric properties of BMCT specimens were investigated as a function of composition and sintering temperature. All BMCT ceramics sintered over 1575$^{\circ}C$ were showed a polycrystalline complex perovskite structure. The density of BMCT (90/10) specimen sintered at $1575^{\circ}C$ was 7.75g/㎤. As the Co contents decreased, the ordering parameter of B-site in BMCT increased. In the case of the BMCT(90/10) ceramics sintered at $1575^{\circ}C$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value o( 25, 17, 845 at 10㎓ and +2.4 ppm/${\circ}$, respectively.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1421-1423
• /
• 2001

$Ba(Mg_{1-x}Co_x)TaO_3$[BMCT] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of 1525 $\sim$ 1625$^{\circ}C$ for 5hr. in air. The crystal structure of BMCT ceramics was investigated by the XRD. The microstructure of the specimens were observed by SEM. The structural properties of BMCT specimens were investigated as a function of composition and sintering temperature. All BMCT ceramics sintered over 1575$^{\circ}C$ were showed a polycrystalline complex perovskite structure without second phases and any unreacted materials. The density of BMCT (90/10) specimen sintered at 1575$^{\circ}C$ was 7.75g/$cm^2$. As the Co contents decreased, the ordering parameter of B-site in BMCT increased. The ordering parameter of BMCT(90/10) specimen sintered at 1575$^{\circ}C$ was 0.98.

• Journal of the Korean Magnetics Society
• /
• v.17 no.3
• /
• pp.120-123
• /
• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• Journal of Magnetics
• /
• v.2 no.3
• /
• pp.96-100
• /
• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.177-180
• /
• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

• Analytical Science and Technology
• /
• v.16 no.1
• /
• pp.1-11
• /
• 2003

This research examined the presence of hazardous materials in chemical workplace field using an integrated chemical/biological monitoring. Chemical workplace field air for volatile organic compounds (VOCs) analysis was collected using a collection tube packed with Tena.x TA adsorbent 400 mg. Workplace field air samples were analyzed by gas chromatography/mass spectrometry (GC/MS). Simultaneously, Tradescantia BNL 4430 clone was exposed in situ to monitor hazardous materials in chemical workplace field. GC/MS analysis showed the presence of various VOCs such as trichloroethylene, toluene, ethylbenzene, (m,p,o)-xylenes, styrene, 1,3,5-trimethylbenzene, and 1,2,4-trimethylbenzene. The results showed that in situ monitoring of VOCs with the Tradescantia-micronucleus (Trad-MCN) assay gave positive results in chemical workplace field and negative response at outdoor air. In conclusion, inhalation of these field air by workers may affect chronic demage to their health by inducing micronuclei formation in Tradescantia pollen mother cells. The combination of chemical/biological monitoring is very effective to evaluate hazardous materials in workplace field and can be alternatively used for screening hazardous materials.