• Title/Summary/Keyword: $Ta_2O_{5}$

Search Result 516, Processing Time 0.028 seconds

Production of Fine Tantalum Powder by Electronically Mediated Reaction (EMR) (도전체 매개반응(EMR)법에 의한 미세 Ta 분말 제조)

  • Park Il;Lee Chuel Ro;Lee Oh Yeon
    • Korean Journal of Materials Research
    • /
    • v.14 no.10
    • /
    • pp.719-724
    • /
    • 2004
  • Production of fine tantalum powder by calciothermic reduction of tantalum oxides ($Ta_{2}O_5$) pellet through an electronically mediated reaction (EMR) has been investigated. $Ta_{2}O_5$ pellet feed and reductant calcium-nickel (Ca-Ni) alloy were charged into electronically isolated locations in a molten $CaCl_2$ bath. The current flow through an external path between the feed (cathode) and reductant (anode) locations was monitored. The current approximately 4.7A was measured during the reaction in the external circuit connecting cathode and anode location. Tantalum powder with approximately 99 $mass\%$ purity was readily obtained after each experiment. Tantalum powder by EMR using $Ta_{2}O_5$ pellet feed was fine compared with that of metal powder by metallothermic reduction and EMR using $Ta_{2}O_5$ powder feed.

Fabrication and Characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS Solar Cells ($Ta_2O_5/Al/SiO_2/P-Si$ MIS형(形) 태양전지(太陽電池)의 제작(製作)과 특성(特性))

  • Noh, Kyung-Suk;Sohn, Yeon-Kyu
    • Solar Energy
    • /
    • v.6 no.2
    • /
    • pp.70-75
    • /
    • 1986
  • The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.

  • PDF

Energy Level Calculation of Fe3+ Paramagnetic Impurity Ion in a LiTaO3 Single Crystal (LiTaO3 단결정 내의 Fe3+ 상자성 불순물 이온에 대한 에너지 준위 계산)

  • Yeom, Tae Ho;Yoon, Dal Hoo;Lee, Soo Hyung
    • Journal of the Korean Magnetics Society
    • /
    • v.24 no.3
    • /
    • pp.71-75
    • /
    • 2014
  • Ground state energy levels of the $Fe^{3+}$ paramagnetic impurity ion in stoichiometric $LiTaO_3$ and in congruent $LiTaO_3$ single crystals were calculated with electron paramagnetic resonance constants. Energy levels between six energy levels were obtained with spectroscopic splitting parameter g and zero field splitting constant D for $Fe^{3+}$ ion. The energy diagrams of $Fe^{3+}$ ion were different from different magnetic field directions ([100], [001], [111]) when magnetic field increases. The calculated ZFS energies of $Fe^{3+}$ ion in stoichiometric and congruent $LiTaO_3$ single crystals for ${\mid}{\pm}5/2$ > ${\leftrightarrow}{\mid}{\pm}3/2$ > and ${\mid}{\pm}3/2$ > ${\leftrightarrow}{\mid}{\pm}1/2$ > transitions were 12.300 GHz and 6.150 GHz, and 59.358 GHz and 29.679 GHz, respectively. It turns out that energy levels of $Fe^{3+}$ paramagnetic impurity in $LiTaO_3$ crystal are different from different crystal growing condition.

Structural and Microwave Dielectric Properties of $ZrO_2$Doped Ba(${Zn_{1/3}}{Ta_{2/3}}$)$O_3$Ceramics ($ZrO_2$가 첨가된 Ba(${Zn_{1/3}}{Ta_{2/3}}$)$O_3$의 미세구조 및 유전특성 연구)

  • Cho, Bum-Joon;Yang, Jung-In;Nahm, Sahn;Choi, Chang-Hack;Lee, Hwack-Joo;Park, Hyun-Min;Ryou, Sun-Youn
    • Journal of the Korean Ceramic Society
    • /
    • v.38 no.2
    • /
    • pp.117-121
    • /
    • 2001
  • 본 연구에서는 Zr $O_2$첨가가 Ba(Zn$_{1}$3/Ta$_{2}$3/) $O_3$(BZT)세라믹의 구조와 고주파 유전특성에 미치는 영향을 조사하였다. 모든 시료에서 $Ba_{5}$Ta$_4$ $O_{15}$ 이차상이 발견되었으며 Zr $O_2$의 첨가량이 증가하면 $Ba_{5}$Ta$_4$ $O_{15}$ 상의 양은 감소하였다. 반면에 Zr $O_2$의 첨가량이 1.5 mol% 이상인 시료에서는 $Ba_{0.5}$Ta $O_3$상이 발견되었다. BZT의 입자 크기는 약 1$mu extrm{m}$ 정도였지만, Zr $O_2$를 첨가하면 입자 크기가 증가하였다. SEM 및 TEM 분석에 의하여 Zr $O_2$가 첨가되면 액상이 존재하는 것을 알 수 있었으며, 이로 인하여 입자가 성장되는 것이 발견되었다. 시편의 밀도는 소량의 Zr $O_2$를 첨가하면 증가하지만 Zr $O_2$첨가량이 증가하면 감소하였다. 유전율은 모든 시료가 27에서 30 사이의 값을 가지고 있었다. 공진주파수 온도계수는 소량의 Zr $O_2$을 첨가하였을 때는 변화하지 않았지만 첨가량이 2.5 mol% 이상에서는 증가하였다. Q$\times$f 값은 Zr $O_2$을 첨가하면 증가하였고, 입자 성장이 완료되는 조성에서 최대 값을 보였다. 본 연구에서는 Zr $O_2$를 2.0 mol% 첨가하고 15$50^{\circ}C$에서 10시간 소결한 시료에서 최대의 Q$\times$f 값(164,000)을 얻을 수 있었다.다.다.

  • PDF

Electrical Properties of Metal - Insulator- Metal Diode for AM-LCD Driving

  • Kim, Jang-Kwon;Lee, Myung-Jae;Kim, Dong-Sik;Chung, Kwan-Soo
    • Proceedings of the IEEK Conference
    • /
    • 2002.07b
    • /
    • pp.1125-1128
    • /
    • 2002
  • Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

  • PDF

Improvement of the Figure of Merit in Pb[(Mg1/3Ta2/3)0.7Ti0.3]O3 Systems

  • Kim, Yeon Jung
    • Applied Science and Convergence Technology
    • /
    • v.25 no.5
    • /
    • pp.88-91
    • /
    • 2016
  • The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

Effect of Sr/Ta mole ratio on the ferroelectric properties of SBT thin films fabricated by LSMCD process (LSMCD 공정으로 제조한 SBT 박막의 Sr/Ta 몰비에 따른 강유전 특성)

  • 박주동;김지웅;오태성
    • Journal of the Korean Vacuum Society
    • /
    • v.9 no.4
    • /
    • pp.360-366
    • /
    • 2000
  • $Sr_xBi_{2.4}Ta_2O_9$ (SBT) thin films of 150 nm thickness were prepared using LSMCD (Liquid Source Misted Chemical Deposition) process with variation of the Sr/Ta mole ratio of 0.35~0.65, and their crystalline phase, microstructure, ferroelectric properties and leakage current characteristics were investigated. Ferroelectric characteristics of the LSMCD-derived SBT films were optimized at the Sr/Ta moleratio of 0.425. The remanent polarization (2Pr) and coercive field (Ec) of the SBT film with the Sr/Ta mole ratio of 0.425 were measured as 15.01 $\mu$C/$ \textrm{cm}^2$ and 41 kV/cm at an applied voltage of $\pm$5 V respectively. LSMCD-derived SBT films with the Sr/Ta mole ratio of 0.35~0.5 exhibited leakage current densities lower than $10^{-5} A/\textrm{cm}^2$ at an applied field of 100 kV/cm, and excellent fatigue-free characteristics of the remanent polarization decrement less than 1% after $10^{10}$ switching cycles at$\pm$5 V.

  • PDF

Effect of $Na_2O$ Addition on Piezoelectric Properties in $(Na_{0.5}K_{0.5})NbO_3-LiTaO_3$ Ceramics ($Na_2O$ 첨가에 따른 $(Na_{0.5}K_{0.5})NbO_3-LiTaO_3$ 세라믹스의 압전특성)

  • Kim, Min-Soo;Oh, Suk;Lee, Dae-Su;Park, Eon-Cheol;Jeong, Soon-Jong;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.06a
    • /
    • pp.315-316
    • /
    • 2006
  • Dense $0.95(Na_{0.5}K_{0.5})NbO_3-0.05LiTaO_3$ (NKN-LT) ceramics were developed by conventional sintering process. Sintering temperature was lowered by adding $Na_2O$ as a sintering aid. The electrical properties of NKN-LT ceramics were investigated as a function of $Na_2O$ concentration. When the sample sintered at $1000^{\circ}C$ for 4h with the addition of 1 mol% $Na_2O$, electromechanical coupling factor ($k_p$) and piezoelectric coefficient ($d_{33}$) of NKN-LT ceramics were found to reach the highest values of 0.43 and 190 pC/N, respectively.

  • PDF

Piezoelectric and Dielectric Characteristics of $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ Ceramics using Conventional Solid State Sintering method (상용 소결법을 이용한 $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ 세라믹스의 압전 및 유전 특성)

  • Kim, Min-Soo;Kim, Sin-Woong;Oh, Seok;Jeong, Soon-Jong;Min, Bok-Ki;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.11a
    • /
    • pp.210-220
    • /
    • 2006
  • Dense $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were developed by conventional sintering process. The electrical properties of $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were investigated as a function of Li substitution. When the sample sintered at $1100^{\circ}C$ for 4 h with the Substitution of 2 mol% Li, electro-mechanical coupling factor ($k_p$) and piezoelectric coefficient ($d_{33}$) were found to reach the highest values of 0.42 and 210 pC/N, respectively.

  • PDF

Microwave Dielectric Properties of $Ba(Mg_{1/3}Ta_{2/3})O_3$[BMT] Ceramics with Ca1cining Condition (하소조건에 따른 $Ba(Mg_{1/3}Ta_{2/3})O_3$[BMT] 세라믹스의 마이크로파 유전특성)

  • Hwang, Tae-Kwang;Lim, Sung-Soo;Chung, Jang-Ho;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.04b
    • /
    • pp.84-87
    • /
    • 2000
  • The microwave dielectric properties of complex perovskite-structured $Ba(Mg_{1/3}Ta_{2/3})O_3$ ceramics were investigated with calcining condition. The BMT ceramics were prepared by conventional mixed oxide method. Calcining conditions were $1200^{\circ}C$ for 10hr., $1300^{\circ}C$ for 2hr., and 5hr., respectively. And the specimens were sintered at $1650{\mu}m$. The structural and microwave properties of BMT ceramics were investigated by XRD, SEM and network analyzer. In the case of BMT ceramics calcined at $1300^{\circ}C$ for 5 hr., dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.26, 31,144(at 1GHz), 6.11[ppm/$^{\circ}C$], respectively.

  • PDF