• Applied Microscopy
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• v.34 no.1
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• pp.61-69
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• 2004

The microwave dielectric properties and microstructures of the Complex Perovskite (1-x)$(Li_{1/2}Sm_{1/2})TiO_3-x (Na_{1/2}Sm_{1/2})TiO_3$(LNST) system were investigated using the X-ray diffraction (XRD) and scanning electron microscopy (SEM). LNST had not only the antiphase tilting of oxygen octahedron but also the inphase tilting of oxygen octahedron and the antiparallel shift of cations. Also, when $0.0{\leq}x{\leq}0.4$, LNST had the vacancy ordering of A-sites because of the evaporation of Li ions. From the observation of the microstructure, abnormal grain growth phenomena were observed over the whole range of x. The temperature coefficient of resonant frequency ($T_{cf}$) of the $({Li_{1/2}}^{+1}{Sm_{1/2}}^{+3})TiO_3$(LST) system has a large negative value ($-220ppm/^{\circ}C$) but the $({Na_{1/2}}^{+1}{Sm_{1/2}}^{+3})TiO_3$(NST) system which substituted $Na^{+1}$ has a large positive value ($+173ppm/^{\circ}C$). The dielectric properties of ${\varepsilon}_r=103,\;Q*f_{0}=3,700GHz$ and $T_{cf}=+50ppm/^{\circ}C$ at 4GHz were obtained when x =0.4.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.179-183
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• 2000

For a ground plane in high-temperature superconducting ramp-edge junction devices, YBa$_2$Cu$_3$O$_{7-{\delta}}$/SrTiO$_3$/YBa$_2$Cu$_3$O$_{7-{\delta}}$ multilayer structures were fabricated using pulsed laser deposition and ECR ion milling. Various process parameters were adjusted to enhance the device characteristics. By etching the STO layer to form a tapered edge of about 15$^{\circ}$ and in-situ RF plasma treatment of bottom YBCO surface prior to deposition of top YBCO, the top-to-bottom YBCO showed T$_c$ of 75${\sim}$80 K and I$_c$ of about 40 mA through holes. It was found that the deposition of bottom YBCO at a reduced laser repetition rate of 1Hz increased the T$_c$ of top YBCO to 79.9 K. The resistivity of 570 layer was about 10$^6$ ${\Omega}$cm at 60 K, which ensures good electrical isolation between successive YBCO layers.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.85-92
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• 1994

Ferroelectric Bi4Ti3012 thin films have been grown on LaAlO(001) by Pulsed-laser deposition. Phase formation and structural films prepared of the films prepared at varigus deposition temperatures are investigated using x-ray diffraction The film grown at 740℃ shows epitaxial growth behavior with c-akis normal to the substrate. N2tBmstiucCures of Bi4Ti3012/YBa2Cu307-x/LaAIO3(001) have been in-situ grown. Even though the a-and b-axes of the Yba2Cu307-x layer show epitaxial growth behavior.

• Korean Chemical Engineering Research
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• v.45 no.3
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• pp.298-303
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• 2007

Several combinations of ozone based advanced oxidation processes were tested for the treatment of red water (RW) containing recalcitrant chemical pollutants produced from 2,4,6-trinitrotoluene (TNT) manufacturing process. $O_3$, $UV/O_3$, $UV/O_3/H_2O_2$, $UV/O_3/H_2O_2/Fe^{2+}$ processes were tested for the treatment of RW. The order of organic and color removal efficiency was found to be : $O_3{\leq}UV/O_3$ < $UV/O_3/H_2O_2$ < $UV/O_3/H_2O_2/Fe^{2+}$. The optimum conditions for the removal of organic and color in the $UV/O_3/H_2O_2/Fe^{2+}$ process were 0.053 g/min of ozone flow rate, 10 mM of $H_2O_2$ concentration and 0.1 mM of $FeSO_4$ concentration. Organic and color removal efficiencies were 96 and 100 % respectively in the $UV/O_3/H_2O_2/Fe^{2+}$ process. tert-butyl alcohol (t-buOH) was used as the hydroxyl radical scavenger. Enhancement of hydroxyl radical production was achieved by the combination of ozone with several oxidants such as UV, $H_2O_2$, $Fe^{2+}$.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.1-13
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• 1995

Cr:A12O3 and Ti:A12O3 single crystals were grown by Czochralski method, and the effects of crystal growth parameters such as pulling rate, rotation rate, dopant and growth atmosphere on crystal quality were investigated. And spectroscopic properties including lasing efficiency were also measured. Single crystals, sized of 20mm in diameter and 100-135mm in length, were successfully grown from the seed of <001> direction. With the doping level of 0.5w/o Cr2O3, pulling rate 2.0mm/hr, rotation rate of 30rpm and inert atmosphere by nitrogen gas, high quality crystals of Cr:A12O3 were grown. While in case of Ti:A12O3 crystals, high quality crystals were grown under the conditions of the doping level of 0.25w/o TiO2, pulling rate of 1.5mm/hr, rotation rate of 30rpm and reducing atmosphere by hydrogen - nitrogen mixed gas. It was confirmed that Cr3+ ion which maintains its ionoc valence during growth easily de-bubbled than Ti4+ ion which changes its valence, Fe3+ ion also has do-bubbling effect to Ti:A12O3 crystal and the reducing atmosphere by 90% N2 - 10% H2 mixed gas gave effective result on the changing of Ti4+ to Ti3+ and de-bubbling. As a result of spectroscopic measurements of Cr:A12O3 crystal, 4A2 →4F2 and 4F1 absorption transitions and E →4A2(R1) and 2A →4A2(R2) fluorenscence transitions were confirmed. And it was measured that wavelengths of laser R1 and R2 transitions were 696±5nm and 692±5nm respectively, line width of these transitions were 12A, and life-time of fluorenscence was 152μsec. In case of Ti:A12O3 crystals, it was confirmed that absortion transition of 4T2→4E and fluorescence transition of 4E→4T2 with wide range of 650-1050nm was occured. And 147μsec of life-time of fluorescence, 125.4 of figure of merit and 9% of laser efficience were also measured.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.2
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• pp.33-41
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• 2005

ZnO epilayer was synthesized by the pulsed laser deposition(PLD) process on Al$_2$O$_3$ subsorte after irradiating the surface of ZnO sintered pellet by ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A1203) substrate at the 境mperature of 400$^{circ}$C. The crystalline structure of epilayer was investigated by the Photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measure with Hall effect by van der Pauw mothod are $8.27\times$1016cm$^{-3}$ and 299 cm$^{2}$/V$\cdot$s at 293 K respectively, The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, E$_g$(T)= 3.3973 eV - ($2.69\times$ 10$^{-4}$ eV/K)T$^{2}$/(T + 463K). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of V$_{Zn}$, V$_{O}$, Zn$_{int}$, and O$_{int}$ obtained by PL measurements were classified as a donor or acceptor type. In addition we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/Al$_2$O$_3$ did not firm the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.38-42
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• 2007

The crystallographic and magnetic properties of $KFeO_2$ powder prepared by ball-mill method, have been studied by x-ray diffraction(XRD), $M\"{o}ssbauer$ spectroscopy, and vibrating sample magnetometer(VSM) measurements. The crystal structure of $KFeO_2$ powder at room temperature is determined to be an orthorhombic structure of Pbca with its lattice constants $a_0=5.557{\AA},\;b_0=11.227{\AA},\;c_0=15.890{\AA}$ by Rietveld refinement. $M\"{o}ssbauer$ spectra of $KFeO_2$ were taken at various temperatures ranging from 4.2 to 818 K. The magnetic hyperfine field and isomer shift value at 4.2 K and RT were 519 kOe, 489 kOe and 0.19 mm/s, 0.05 mm/s respectively. The average hyperfine field $H_{hf}(T)$ of the $KFeO_2$ shows a temperature dependence of $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.36(T/T_N)^{5/2}$ for $T/T_N$<0.7, indicative of spin-wave excitation.

• Korean Journal of Microbiology
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• v.9 no.3
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• pp.103-120
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• 1971

We have been studied on brewing sweet starch. We obtained the results as follows ; 1) 5 strains, T-T-2, T-T-4, T-K-2, T-T-18, T-T-1, were the most available in view of fermentative power by capacity of $CO_2$. 2) 5 strains, T-T-4, T-T-2, T-T-1, T-T-3, T-K-2, produced capacity of alcohol more than 5.78%. 3) 6 strains, T-T-2, T-K-2, T-T-4, T-S-2, T-I-3, T-I-1, are available not only taste and flavour, but productive power of alcohol in sweet potato starch. 4) The form of 6 strains are long oval and round and most of them are similar to the other yeast in size. 5) In giant colony the color was cream color and cream buff, and T-K-2 was formed by $15{\times}12mm$ on diameter and by 3.5mm on high. 6) Optimum temperature of most of all strains is 25~ $300^{\circ}C$but T-K-4 is 28-30.deg.C. 7) Optimum pH is 3.4-4.6. 8) T-S-2 was died off at 65.deg.C, the other strains died $60^{\circ}C$. 9( Making Bun-kok with non-heated wheat bran .alpha.-amylase was more increased by 4.5-13.5 mg of glucose in reaction solution and .betha.-amylase more 1.6-3.4ml of N/10-$KMnO_4$ Solution than Bun-kok with heated wheat bran. 10) It seems that mycellium grows better than original in substance containing 0.4 ~ 1.2% of HCl. 11) Making Bun-kok to add 0.8% HCl, .alpha.-amylase was increased 9.93-20.7mg of glucose and .betha.-amylase ws increased 2.6~4.3ml of N/10-$KMnO_4$ solution to reaction solution. 12) 1.2%-HCl, or higher concentration, acts as inhibitor, in the meanwhile the concentration between 0.4~0.8% of HCl acts as activator. 13) We must make Bun-kok for 42 hours, at 28~$30^{\circ}C$) After we made Bun-kok using S-O-II and R-J-I one by one, Bun-kok which mix each other in equal quantity is increased more than original on enzyme acrivity. 15) Oxidation is the best way of refining sweet potato starch in N/10-phosphate buffer solution (pH 7.5). 16) When we prepared sweet potato starch, first pH was 3.0.

• Journal of Technologic Dentistry
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• v.21 no.1
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• pp.5-14
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• 1999

Glass ceramics for dental crown prosthesis were prepared by crystallization of CaO-MgO-SiO2-$P_2O_5-TiO_2$ glasses. Their crystallization behaviors have been investigated as a function of heattreatment temperature, holding time and chemical composition in relation to mechinical properties. Crystallization peak temperatures were determined by differential thermal analysis(DTA). Crystalline phases and mircostructures of heat-treated sample were determined by the means of powder X-ray diffraction(XRD) and scanning electron microscopy(SEM). The final crystalline phase assemblages and the microstructures of the samples were found to be dependent on glass compositions, heattreatment temperature, and holding time. 1st crystallization peak temperature(TP), affected strongly by apatite, was found to be increased or decreased. From the experiment, the following results were obtained : 1. The crystallization peak temperature($T_P$) formed by apatite increased until adding up to 9wt% $TiO_2$ to base glass composition, then decreased above that. 2. Apatite($Ca_{10}P_6O_{25}$), whitlockite(${\beta}-3CaO-P_2O_5$), $\beta$-wollastonite($CaSiO_3$), magnesium tianate($MaTiO_3$) and diopside(CaO-MgO-$2SiO_2$) crystal phase were precipitated in MgO-CaO-$SiO_2-TiO_2-P_2O_5$ glass system containing 9wt% and 11wt% of $TiO_2$ 3. Vickers hardness of samples increased with increasing heat-treatment temperature and Vickers hardness of S415T9 samples heat-treated at 1075 was approxi-mately 813Kg $mm^{-2}$ as maximum value. 4. Vickers hardness of samples increased due to precipitation of apatite, whitlockite, $\beta$-wollastonite, magnesium titanate, and diopside crystal phases within glass matrix.

• Korean Journal of Crystallography
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• v.15 no.2
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• pp.93-98
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• 2004

The structure of C_{28}H_{41}N_4O_4Br\;{\cdot}\;2H_2O$ has been determined by X-ray deffraction methods. The crystal system is triclinic, space group Pl, unit cell constants, a=9.000(1) $\AA$, b=9.312(3) $\AA$, c=9.344(2) $\AA$, $\alpha=89.37(20)^{\circ},\;\beta=68.81(3)^{\circ},\;\gamma=84.70(4)^{\circ},\;V=726.7(8){\AA},\;T=298K,\;Z=1,\;D_c=1.402Mgm^{-3}$. The intensity data were collected on an Enraf-Nonius CAD4 Diffractometer with graphite monochromated $MoK\alpha$ radiation $(\lambda=0.71073\;{\AA}$. The molecular structure was solved by direct methods and refined by full-matrix least squares to a final $R=5.95\%$ for 2521 unique observed $F_0>4\sigma(F_0)$reflections and 370 parameters.