• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.13-16
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• 2002

$SrZrO_3 $resistive oxide barriers on Ag sheathed Bi2223 tapes were prepared by the sol-gel and dip coating method to reduce AC coupling loss. The performance of the dip-coated $SrZrO_3 $ thin films was evaluated in terms of bond strength by varying the Sr/Zr mol ratio and the amount of organic vehicle (ethyl cellulose and a-terpineol) additives. The bond strength of the coatings increased as the Sr/Zr ratio decreased and the amount of organic vehicle rose, respectively. It was found that the effect of organic vehicle addition was more pronounced, suggesting that the adherence of the $SrZrO_3 $ films on Bi2223 tapes was governed primarily by the amount of organic vehicle additive.

• 한국세라믹학회지
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• 제34권6호
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• pp.583-590
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• 1997

The effects of Mn2O3 and Y2O3 additives on the microstructure and dielectric properties of Sr(Zr, Ti)O3 have been investigated. Powders with Sr(Zr1-xTix)O3(0$\leq$x$\leq$0.1) composition were prepared by the conventional solid state processing from commercial TiO2 and precipitation-processed ZrO2. The powders containing sintering additives of Mn2O3 and Y2O3 were compacted and then sintered at 1,55$0^{\circ}C$ for 4 h to get>97% relative density. Mn2O3 suppressed the grain growth and Y2O3 enhanced the density of sintered body. The oxidation state of Mn ions were determined by a chemical wet method and EPR spectroscopy. Mn ions were present as Mn2+ and Mn4+ in SrZrO3, while as Mn3+ and Mn4+ in Ti-substituted Sr(Zr, Ti)O3. With the substitution of Ti, the lattice parameters of SrZrO3 decreased and its dielectric constant increased with remarkable decrease in Q value. The dielectric constant of Sr(Zr, Ti)O3 was in the range of 30 to 40, Q values 1,200~5,400 at 6 GHz and temperature coefficient of resonant frequency -67~100 ppm/K.

• 한국표면공학회지
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• 제29권6호
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• pp.839-846
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• 1996

Epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$by pulsed laser deposition for ferroelectric field effect transistor. Epitaxial $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures exhibited 70$\mu C/cm^2$ and 17 $\mu C/cm^2$at a positively and negatively poled states, respectively. On the other hand, epitaxial (La, Sr)$CoO_3/Pb(Zr,\;Ti)O_3/LaCoO_3$heterostructures show the remnant polarization states opposite to the $LaCoO_3/Pb(Zr,\;Ti)O_3/(La,\;Sr)CoO_3$ heterostructures. This indicates that the interface between (La, Sr)$CoO_3$ (LSCO) and $Pb(Zr, Ti)O_3(PZT)$ layers affects the asymmetric polarization remanence through electrochemical nature. The resistivity of $LaCoO_3$ (LCO) layer was found to be dependent on an ambient oxygen, primarily the ambient oxygen pressure during deposition. The resistivity of the LCO layer varied in the range of 0.1-100 $\Omega$cm. It is suggested that, with an appropriate resistivity of the LCO layer, the LCO/PZT/LSCO heterostructure can be used as the ferroelectric field effect transistor.

• 한국세라믹학회지
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• 제40권5호
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• pp.501-505
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• 2003

은(Ag) 선재 위에 SrZrO$_3$ 절연 산화물을 졸-겔과 딥-코팅법으로 제조하여 박막표면의 미세균열에 미치는 PVP 함량과 건조조건 영향을 조사하였다. PVP 함량이 증가할수록 박막 두께는 증가하였지만, PVP 함량과 열처리 온도는 박막 표면의 미세균열에 영향을 미치지 못 하였다. 하지만, 낮은 건조온도와 긴 건조시간은 SrZrO$_3$ 박막 미세균열에 영향을 주었다. 그러므로, SrZrO$_3$ 코팅층 표면의 미세조직은 건조조건에 의하여 결정되는 것으로 관찰되었다.

• 한국재료학회지
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• 제20권5호
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• 한국세라믹학회지
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• 제37권6호
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• pp.612-616
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• 2000

The effect of Co dopant on the (La, Sr)MnO3 cathode was investigated. La2Zr2O7 and SrZrO3 were formed as the reaction products between YSZ and LSMC. The reactivity of LSMC with YSZ increased with increasing Co content. However, the cathodic polarization resistance decreased with increasing Co doping. Therefore, doping Co at Mn site in the (La, Sr)MnO3 cathode was effective on controlling the polarization resistance of the cathode. The polarization property of LSMC-YSZ composite(60 wt%: 40 wt%) cathode was better than that of LSMC single cathode.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 한국세라믹학회지
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• 제36권7호
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• pp.679-684
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• 1999

Specimens of SrZr0.95Ga0.05O3-$\delta$, SrZr0.95Y0.05O3-$\delta$, BaZr0.95Ga0.05O3-$\delta$ and BaZr0.95Y0.05O3-$\delta$ were fabricated by a solid-state reaction method and subsequent sintering at 150$0^{\circ}C$ to 1$600^{\circ}C$ The microstructures and electrical characteristics of the specimens were studied. Only BaZr0.95Ga0.05O3-$\delta$ showed dense microstructure and had typical impedance spectra at various temperature. Its electrical conductivity by impedance analysis was 2.7$\times$10-3$\Omega$-1.cm-1 at 90$0^{\circ}C$ in air. The BaZr0.95Ga0.05O3-$\delta$ exhibited lower grain rsistance in wet atmosphere than in dry atmosphere and the reduction of resistance is due to the proton conduction.

• 한국결정성장학회지
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• 제4권3호
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• pp.252-261
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• 1994

본 연구는 수산염법에 의해 화학적으로 균일하며 고순도인 미립의 $(Ba_{1-X}Sr_X)ZrO_3$ 분말을 합성하고 합성된 분말의 미세구조와 유전특성을 조사하여 공진주파수의 온도계수$({gamma}_f)$가 안정한 $(Ba_{1-x}Sr_x)Zr0_3$의 최적 합성조건을 규명하고자 하였다. 6가지 조성의 $(Ba{_1-X}Sr_x)ZrO_3$ (X=0, 0.2, 0.4, 0.6, 0.8, 1) 화합물을 수산염법으로 얻은 후 이를 $1000^{\circ}C$에서 하소하여 결정질 $(Ba_{1-X}Sr_X)ZrO_3$ 분말을 합성하였다. 합성한$(Ba_{1-x}Sr_x)Zr0_3$ 분말은 구형으로 $0.2 {mu}m$이하의 평균 입경을 가졌으며, ${\tau}_c$는 Ba에 대해 Sr이 0.5 정도 치환된 조성에서 0이 되는 조성을 유추할 수 있었다.

• 한국수소및신에너지학회논문집
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• 제33권2호
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• pp.164-175
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• 2022

In this work, sulfonated poly (ether ether ketone) (SPEEK) composite membranes including strontium zirconate (SrZrO₃) were fabricated by the electrospinning method. Fourier-transform infrared spectroscopic analysis and X-ray diffraction analysis were used to identify the chemical structure and the crystallinity of SrZrO₃ and electrospun composite membranes. The thermal stability of the pure SPEEK and SPEEK/SrZrO₃ electrospun composite membranes were investigated by using thermogravimetric analysis. The physicochemical properties and proton conductivity were enhanced with the addition of different weight ratio of SrZrO₃ nanofiller (2, 4 and 6 wt%) in SPEEK polymer. The optimized SPEEK/SrZrO₃-4 electrospun membrane containing 4 wt% of SrZrO₃ showed a high proton conductivity compared to other electrospun SPEEK/SrZrO₃ composite membranes. The results indicate that electrospun composite membranes incorporating these perovskite nanofillers should be explored as potential candidates for use in proton exchange membrane fuel cells.