• 제목/요약/키워드: $SrTiO_3$$BaTiO_3$

검색결과 494건 처리시간 0.044초

RF magnetron sputtering을 이용한 ($Ba_{0.5}Sr_{0.5})TiO_3$ 박막의 RF power 의 존성 (Dependence of RF power of ($Ba_{0.5}Sr_{0.5})TiO_3$ thin film using RF magnetron sputtering)

  • 최형윤;이태일;정순원;박인철;최동한;김흥배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.51-54
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    • 2000
  • In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

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캐패시터용 강유전체 박막의 제조 및 특성 (Fabrication and Properties of Ferroelectric Thin Film for Capacitor)

  • 소병문;박춘배
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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    • pp.31-34
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    • 1999
  • In the present study, we fabricated stoichiometric $(Ba_{1-x}Sr_x)TiO_3$ thin films at various substrate temperature and contents using of magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/$SiO_2$/Si). The substate temperature deposited at 200[ $^{\circ}C$], 400[$^{\circ}C$] and 600[$^{\circ}C$] and crystalline BST thin films show above 400[$^{\circ}C$]. Also, the composition of $(Ba_{1-x}Sr_x)TiO_3$ thin films deposited on Si wafer substrate at 400[$^{\circ}C$] were closed to stoichiometry($1.015{\sim}1.093$ in A/B ratio), but compositional deviation from a stoichiometry is larger as $SrCO_3$ is added. The drastic decrease of dielectric constant and increase of dielectric loss in $(Ba_{1-x}Sr_x)TiO_3$thin films is observed above 100[kHz]. V-I characteristics of $(Ba_{1-x}Sr_x)TiO_3$ thin films show the decrease of leakage current with the increase of $SrCO_3$ contents.

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졸-겔법을 이용한$(Ba_{1-x}Sr_x)TiO_3$분말합성 (A Synthesis of $(Ba_{1-x}Sr_x)TiO_3$ Powders by Sol-Gel Route)

  • 김영석;김덕준;김환
    • 한국재료학회지
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    • 제2권2호
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    • pp.151-156
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    • 1992
  • 본 연구에서는 $Ba(OH)_2{\cdot}8H_2O,\;Sr(OH)_2{\cdot}8H_2O$$Ti(i-OC_3H_7)_4$를 사용하여 졸-겔법에 의해 미세한 $(Ba_{1-x}Sr_{x})TiO_3$ 분말을 제조하였다. TEM 관찰, BET 비표면적측정 및 XRD회절도의 분석결과 $700^{\cric}C$에서 하소한 뚠말의 입자크기는 20~40nm이고 입방정상으로 존재하였다. 또한 XRD 회절도고부터 계산된 격자상수 및 (112)피크의 이동으로부터 고용체분말이 형성되었음을 확인할 수 있었다. 제조된 분말에서의 EDAX 분석을 통한 양이온들의 상대적인 비율 및 소결체에 대한 유전상수의 측정결과로부터 제조된 분말에서 양이온들의 분포가 입자단위에서 균질함을 예상할 수 있었다.

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MgO를 첨가한 $Ba_xSr_{1-x}TiO_3$ 후막의 소결거동과 가변 유전특성 (Effect of Sintering and Tunable Dielectric Properties of BST Thick Films with MgO addition)

  • 전소현;김인성;송재성;윤존도
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.205-206
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    • 2006
  • (BaSr)$TiO_3$ thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties. With MgO additives, the sintering density was 5.8 $g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. Dielectric loss be on the decrease because the interface is not a pore. BST sample be applicable on tunable device.

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저온 액상 소결제 B$_2$O$_3$ 첨가에 의한 $Ba_{0.7}$Sr$_{0.3}$TiO$_3$ 세라믹스의 소결거동 및 유전 강유전 특성변화 (Effect of B$_2$O$_3$ Addition on the Sintering Behavior Dielectric and Ferroelectric Properties of $Ba_{0.7}$Sr$_{0.3}$TiO$_3$Ceramics)

  • 임성민;홍석민;박홍진;김옥경
    • 한국세라믹학회지
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    • 제36권7호
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    • pp.767-772
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    • 1999
  • The effect of B2O3 addition on the sintering behavior dielectric and ferroelectric properties of Ba0.7Sr0.3TiO3 ceramics were investigated. The sample with 0.5wt% B2O3 was sintered under 115$0^{\circ}C$. The dielectric and ferroelectric properties of BST with 0.5wt% B2O3 was as good as BST without B2O3 sintered at 135$0^{\circ}C$ and its dielectric loss was even better When B2O3 was added over 1.0wt% the overdoped B2O3 remained in the specimens and formed a second phase which degraded the sintering behaivor dielectric properties of BST.

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0.96(Na0.5K0.5)NbO3-0.04(Ba(1-x)Srx)TiO3 무연 세라믹스의 유전 및 압전 특성 (Dielectric and piezoelectric properties of 0.96(Na0.5K0.5)NbO3-0.04(Ba(1-x)Srx)TiO3 lead-free ceramics)

  • 김미로;윤석진;최지원
    • 센서학회지
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    • 제19권2호
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    • pp.155-159
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    • 2010
  • 0.96$(Na_{0.5}K_{0.5})NbO_3$-0.04$(Ba_{(1-x)}Sr_x)TiO_3$ lead free piezoelectric ceramics were synthesized to enhance the piezoelectric properties of (Na,K)$NbO_3$. The systhesis and sintering method were the conventional solid state reaction method and general sintering method in air atmosphere. The polymorphic phase transition(PPT) was observed at all composition(0 $\leq$ x $\leq$ 0.05) when $(Ba_{(1-x)}Sr_x)TiO_3$ were added in the $(Na_{0.5}K_{0.5})NbO_3$. As Sr concentration was increased, grain size, dielectric loss(tan$\delta$) and mechanical quality factor($Q_m$) were decreased and piezoelectric constant($d_{33}$) and electromechanical coupling factor($k_p$) were increased within a limited value. The optimized piezoelectric and properties, $d_{33}$, $k_p$, $Q_m$, and tand, of 0.96$(Na_{0.5}K_{0.5})NbO_3$-0.04$(Ba_{(1-x)}Sr_x)TiO_3$ were 139 pC/N, 0.31 %, 95, 0.04 at the composition of x=0.04.

Reflection High Energy Electron Diffraction이 결합된 Laser Molecular Beam Epitaxy System에서 $BaTiO_3/SrTiO_3$ 산화물 인공격자의 Layer-by-Layer 성장 (Atomic Layer-by-Layer Growth of $BaTiO_3/SrTiO_3$ Oxide Artificial Lattice in Laser Molecular Beam Epitaxy System Combined Reflection High Energy Electron Diffraction)

  • 이창훈;김이준;전성진;김주호;최택집;이재찬
    • 한국세라믹학회:학술대회논문집
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    • 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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    • pp.179.2-179
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    • 2003
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