• Title/Summary/Keyword: $SrRuO_3$

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Magnetic Properties of SrRuO3 Thin Films Having Different Crystal Symmetries

  • Kim, Jin-I;Jung, C.U.
    • Journal of Magnetics
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    • v.13 no.2
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    • pp.57-60
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    • 2008

  • This study examined the effect of various types of epitaxial strain on the magnetic properties of $SrRuO_3$ thin films. Epitaxial $SrTiO_3$ (001), $SrTiO_3$ (110), and $SrTiO_3$ (111) substrates were used to apply different crystal symmetries to the grown films. The films were grown using pulsed laser deposition. The X-ray diffraction patterns of the films grown under optimum conditions showed very clear peaks for the $SrRuO_3$ film and $SrTiO_3$ substrates. The saturated magnetic moment at 5 K after 7 Tesla field cooling was $1.2-1.4\;{\mu}_B$/Ru. The magnetic easy axis for all three types of films was along the surface normal. The magnetic transition temperature for the $SrRuO_3$ film with lower symmetry was slightly larger than the $SrRuO_3$ film with higher symmetry.

  • https://doi.org/10.4283/JMAG.2008.13.2.057 인용 PDF KSCI

Study on the Structural and Transporting Property of Sr2Ru1-xCuxO4-y(0.0≤x≤0.5) (Sr2Ru1-xCuxO4-y(0.0≤x≤0.5) 화합물의 구조 및 전달 특성에 대한 연구)

  • Park, Jung-Chul
    • Journal of the Korean Chemical Society
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    • v.47 no.6
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    • pp.614-618
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    • 2003

  • $Sr_2Ru_{1-x}Cu_xO_{4-y}(0.0{\le}x{\le}0.5)$ compounds were prepared using a conventional solid state reaction. Based on the Rietveld refinements of X-ray diffraction results, it is revealed that $Sr_2Ru_{1-x}Cu_xO_{4-y}$ compounds are the single phases with K2NiF4 type tetragonal system in the range of 0=x=0.3, while the mixed phases of$Sr_2RuO_4$ and $Sr_2CuO_3$ in the range of $0.4{\le}x{\le}0.5$. By means of X-ray photoelectron spectroscopy, the valence states of Ru and Cu in $Sr_2Ru_{1-x}Cu_xO_{4-y}$, have been confirmed to 4+ and 2+, respectively. The bond length difference between $Ru-O_1 ({\times}4)\;and\;Ru-O_2 ({\times}2)\;in\;RuO_6$ octahedron is gradually decreased with increasing Cu content in $Sr_2Ru_{1-x}Cu_xO_{4-y}$, which results in the lower c/a ratio. So, it might be assured that the variation of local symmetry of $RuO_6$ octahedron is very closely related to the transporting property of $Sr_2Ru_{1-x}Cu_xO_{4-y}$ compounds. The behavior of resistivity discloses that the metallic property in $Sr_2RuO_4$ changes into the semiconducting one in proportion to the Cu content in $Sr_2Ru_{1-x}Cu_xO_{4-y}$.

  • https://doi.org/10.5012/jkcs.2003.47.6.614 인용 PDF KSCI KPUBS HTML

Structural and Electrical Properties of SrRuO3 thin Film Grown on SrTiO3 (110) Substrate

  • Kwon, O-Ung;Kwon, Namic;Lee, B.W.;Jung, C.U.
    • Journal of Magnetics
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    • v.18 no.1
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    • pp.39-42
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    • 2013

  • We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

  • https://doi.org/10.4283/JMAG.2013.18.1.039 인용 PDF KSCI

The ferroelectric $Pb(Zr_{0.2}Ti_{0.8})O_3$ thin film growth on $SrRuO_3$/Si structure by pulsed laser deposition (펄스 레이저 증착법으로 $SrRuO_3$/Si 구조위에서 증착된 강유전체 $Pb(Zr_{0.2}Ti_{0.8})O_3$ 박막)

  • Xian, Cheng-Ji;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.302-302
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    • 2007

  • The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

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