• Korean Journal of Materials Research
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• v.9 no.8
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• pp.854-857
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• 1999

The properties of Fe-Se-Te system(FeSe(sub)1-xTe(sub)x, x=0.2, 0.5, 0.8) have been studied by means of the X-ray diffraction method and Mossbauer spectroscopy. The results of X-ray diffraction patterns show that three samples have the ixed structure of tetragonal PbO and a small amount of hexagonal NiAs structure respectively. For x=0.5 the lattice parameters of tetragonal PbO structure are a=3.795$\AA$, c=5.896$\AA$ and c/a=1.55. The Mossbauer spectra were obtained with the various temperature variation and than they do not exhibit magnetic hyperfine structure but show a strong doublet. The values of observed isomer shift and quadrupole splitting suggest that the irons of all samples exist in the +2 oxidation state with a major covalent contribution. The temperature dependence of isomer shift values for x=0.8 seems to be originated from the second order Doppler effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.570-573
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• 1999

Hydroxyapatite films were prepared on Si(100) substrates by using a sol-gel method with calcium nitrate and phosphoric acid as starting materials. Precursor sols were spin-coated onto the substrates and prefired at $500^{\circ}C$ for 10 min in air. Formation of the hydroxypatite structure was confirmed in the sample annealed at $500^{\circ}C$ by the X-ray diffraction $\theta$-2$\theta$ scans and a tricalcium phosphate phase was observed in the samples annealed at both temperature regions of $500^{\circ}C$~$700^{\circ}C$ and $900^{\circ}C$. From the results of Fourier transform infrared spectroscopy, the change of a carbon content and improvement of crystallinity have been discussed as a function of increase of annealing temperature.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2211-2212
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.579-580
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) Precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately 60fm. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1245-1246
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1705-1706
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Journal of Magnetics
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• v.11 no.1
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• pp.8-11
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• 2006

Recently half-metallic full-Heusler alloy films have attracted significant interests for spintronics devices. As these alloys have been known to have a high spin polarization, very large TMR ratio is expected in magnetic tunnel junctions. Among these alloys, $Co_2MnSi$ full-Heusler alloy with a high spin polarization and a high Curie temperature is considered a good candidate as an electrode material for spintronic devices. In this study, the magnetic and structural properties of $Co_2MnSi$ Heusler alloy films were investigated. TMR characteristics of magnetic tunnel junctions with a $Co_2MnSi/SiO_2/CoFe$ structure were studied. A maximum MR ratio of 39% with $SiO_2$ substrates and 27% with MgO(100) substrates were obtained. The lower MR ratio than expectation is considered due to off-stoichiometry and atomic disorder of $Co_2MnSi$ electrode together with oxidation of the electrode layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1014-1019
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• 2006

The influence of the number of solution coatings on the densification of the PZT thick films was studied. PZT powder and PZT precursor solution was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were (A) PZT(80/20)/PZT(20/80), (B) PZT(70/30)/PZT(30/70) and (C) PZT(60/40)/PZT(40/60), (D) PZT(52/48)/PT. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 moth and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about $60{\mu}m$. A grain size was increased with increasing the coating number. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant of PZT thick films was improved 30-100% as the number of coatings.