• Korean Journal of Soil Science and Fertilizer
• /
• v.24 no.4
• /
• pp.272-277
• /
• 1991

To investigate changes of boron fractions in soil with vegetable cultivation affected by boron application Jossangmiho, chinese cabbage was planted in 1/2.000a pot with four different soils which are sandy loam, calcareous, organic and vinyl house soil. Increment of available boron in soil with different boron applications was in the order of vinyl hous soil>organic soil>sandy soil>calcareous soil. The ratio of boron fraction to total boron is highest in $NH_4$-oxalate ext.-B with 19.1 % and lowest in water sol.-B and $CaCl_2$ ext.-B with 0.7% respectively. The boron fraction increment due to the different application ratio was in the order of $NH_4-oxalate$ ext.-B>Mannitol exch.-B> $CaCl_2$ ext.-B> $NH_2OH{\cdpt}HCl$ ext.-B>Water soil.-B. As the concentration of calcium in soil increased. water sol.-B decreased and the other forms of boron increased. In the soil high in organic matter, water sol.-B and $NH_4$-oxalate ext.-B increased significantly. but the other forms of boron not.

• Journal of the Korean Electrochemical Society
• /
• v.3 no.1
• /
• pp.11-14
• /
• 2000

Transparent conducting ITO thin films have been studied and developed for the solar cell substrate or LCD substrate. ITO thin film has been mostly fabricated by high cost sputtering method. In this research, sol-gel method is applied to fabricate ITO thin film at lower cost. The research is focused on the establishment of process condition and development of precursor. Organic sol was made of indium tri-isopropoxide dissolved in ethylene glycol monoethyl ether. The hydrolysis was controled by addition of acetyl acetone. Tin(IV) chloride was added as dopant. Inorganic sol was made of indium acetate dissolve din normal propanol. Spin coating technique was applied to coat ITO on borosilicate glass. The resistivity of ITO thin film was approximately $0.01\Omega{\cdot}cm$ and the transmittance is higher than $90\%$ in a visible range.

• Journal of the Korean Ceramic Society
• /
• v.32 no.4
• /
• pp.516-524
• /
• 1995

In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.04a
• /
• pp.53.1-53.1
• /
• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.1
• /
• pp.101-106
• /
• 1999

Pb$(Zr_{0.5},Ti_{0.5})O_3$ thin films were prepared on $Pt/Ti/SiO_2/Si$substrates by spin-coating. The sol was sonicated in an ultrasonic bath to promoto homogenization and the results were compared with untreated case. In the case of PZT thin films prepared from sonicated sol, only perovskite phase was obtained at $550^{\circ}C$ and "rosette" structures in the films disappeared. Dieletric constants (10kHz), remnant polarization, and coercive field of the films prepared from untreated and sonicated sol were 335 and 443, 12.3 and17.7$\mu$C/$\textrm{cm}^2$, 168.4 and 153.5 kV/cm. Electrical properties were improved by introduction of the sonication processon process

• Journal of the Korean Ceramic Society
• /
• v.32 no.1
• /
• pp.95-105
• /
• 1995

Ceria(CeO2) stabilized zirconia(CeSZ) sol was synthesized with zirconium n-butoxide Zr(OC4H9)4 and cerium nitrate hexahydrate Ce(NO3)3.6H2O as precursors and ethylacetoacetate(EAcAc) as a chelating agent under atmosphere. CeSZ films were deposited on AISI 304 stainless steel using the prepared polymeric sol by dipcoating and the coating characteristics were investigated by XRD, ellipsometry, scratch test and SEM. The CeSZ film began to crystallize from amorphous to tetragonal phase at 40$0^{\circ}C$ and it was not converted into monoclinic phase up to 100$0^{\circ}C$ by the addition of 16mol% CeO2 as a stabilizer which could suppress phase transformation of zirconia. The CeSZ films were prepared by varying the EAcAc contents and the cncentration of CeSZ sol and measured the thickness and refractive index. From these results, it was found that the EAcAc contents and concentration of CeSZ coating sol evidently affect the densification of CeSZ film. The CeSZ film coated with 0.4M CeSZ sol and heat-treated at $600^{\circ}C$ for 10min had thickness of 50nm and 17% porosity. The CeSZ film on 304 stainless steel effectively acted as a protective layer against oxidation up to 80$0^{\circ}C$ and had superior corrosion resistance in 25% H2SO4 solution for 4.5 hrs.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.3
• /
• pp.558-564
• /
• 2012

We fabricated Ga doped ZnO (GZO) thin films on the glass substrate (Eagle 2000) with various of Ga doping concentration and annealing temperatures using sol-gel method, electrical and optical properties were investigated. When the GZO thin films doped with 1 mol% of Ga and annealed at $600^{\circ}C$, the excellent (002) orientation was observed. In the results of Hall measurement, carrier concentration decreased and resistivity increased due to segregation effect with increasing of the Ga doping concentration. The largest carrier concentration and lowest resistivity were $9.13{\times}10^{18}cm^{-3}$ and $0.87{\Omega}cm$, respectively, in the GZO thin films doped with 1 mol% Ga and annealed at $600^{\circ}C$. All films is higher than 80 % in the visible light region. Energy band gap narrowing due to Burstein-Moss effect was observed with increasing of Ga doping concentration from 1 to 4 mol%.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.7
• /
• pp.2315-2319
• /
• 2012

To improve the performance of $LiFePO_4F$, a novel sol-gel process is developed. For comparison, ceramic process is also implemented. From X-ray diffraction results we know that each sample adopts a triclinic $P{\bar{1}}$ space group, and they are isostructural with amblygonite and tavorite. The scanning electron microscope images show that the homogeneous grains with the dimension of 300-500 nm is obtained by the sol-gel process; meanwhile the sample particles obtained by ceramic process are as big as 1000-3000 nm. By galvanostatic tests and at electrochemical impedance spectroscopy method, the sample obtained by sol-gel process presents better electrochemical properties than the one obtained by ceramic process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.288-289
• /
• 2006

We studied the effect of sol-gel processing and sintering temperature on the microwave properties of $MgCo_2(VO_4)_2$ system(MCV) which is applicable to LTCC(low-temperature cofired ceramics). The MCV was synthesized by sol-gel process using solution that contains precursor molecules for Mg, Co, and V. SEM analysis shows that the average particle size is ${\sim}1{\mu}m$ and size distribution is very uniform compared to the one prepared by conventional solid-state reaction process. Highly dense samples were obtained at the sintering temperature range of $750^{\circ}C{\sim}930^{\circ}C$. The maximum $Q{\times}f_0$ value of 55,700GHz, dielectric constant(${\varepsilon}_r$) of 10.41 and temperature coefficient(${\tau}_f$) of $-85ppm/^{\circ}C$ was obtained at the sintering temperature of $930^{\circ}C$. The superior microwave properties of sol-gel processed MCV relative to conventional solid-state reaction processed one is remarkable especially at lower sintering temperatures such as $750^{\circ}C$ and $800^{\circ}C$.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.10a
• /
• pp.103.1-103
• /
• 2000