• Korean Chemical Engineering Research
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• v.57 no.6
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• pp.861-867
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• 2019

$Li_4Ti_5O_{12}$ is a promising next-generation anode material for lithium-ion batteries due to excellent cycle life, low irreversible capacity, and little volume expansion during charge-discharge process. However, it has poor charge capacity at high current density due to its low electrical conductivity. To improve this weakness, porous $Li_4Ti_5O_{12}$ was synthesized by sol-gel method with P123 as chelating agent. The physical characteristics of as-prepared sample was investigated by XRD, SEM, and BET analysis, and electrochemical properties were characterized by cycle performance test, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS). $Li_4Ti_5O_{12}$ synthesized by 0.01mol ratio of P123/Ti showed most unified particle size, high specific surface area, and relatively high porosity. EIS analysis showed that depressed semicircle size was remarkably reduced, which suggested resistance value in electrode was decreased. Capacity in rate performance showed 178 mAh/g at 0.2C, 170 mAh/g at 0.5C, 110 mA/h at 5C, and 90 mAh/g at 10C. Capacity retention also showed 99% after rate performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Advances in nano research
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• v.14 no.4
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• pp.313-327
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• 2023

Zinc metal organic framework (MOF_Zn)-loaded goad nanoparticles (AuNPs) sol (Au@MOF_Zn), which was characterized by TEM, Mapping, FTIR, XRD, and molecular spectrum, was prepared conveniently by solvothermal method. The results indicated that Au@MOF_Zn had a very strong catalytic effect with the nanoreaction of AuNPs formation between sodium oxalate (SO) and HAuCl4. AuNPs in the new indicator reaction had a strong resonance Rayleigh scattering (RRS) signal at 370 nm. The indicator AuNPs generated by this reaction, which had the most intense surface enhanced Raman scattering (SERS) peak at 1621 cm -1. The new SERS/RRS indicator reaction in combination with specific aptamer (Apt) to fabricate a sensitive and selective Au@MOF_Zn catalytic amplification-aptamer SERS/RRS assay platform for carbendazim (CBZ), with SERS/RRS linear range of 0.025-0.5 ng/mL. The detection limit was 0.02 ng/mL. Similarly, this assay platform has been also utilized to detect oxytetracycline (OTC) and profenofos (PF).

• The Korean Journal of Physiology and Pharmacology
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• v.25 no.4
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• pp.365-374
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• 2021

The mammalian target of rapamycin (mTOR) plays a role in various cellular phenomena, including autophagy, cell proliferation, and differentiation. Although recent studies have reported its involvement in nociceptive responses in several pain models, whether mTOR is involved in orofacial pain processing is currently unexplored. This study determined whether rapamycin, an mTOR inhibitor, reduces nociceptive responses and the number of Fos-immunoreactive (Fos-ir) cells in the trigeminal nucleus caudalis (TNC) in a mouse orofacial formalin model. We also examined whether the glial cell expression and phosphorylated p38 (p-p38) mitogen-activated protein kinases (MAPKs) in the TNC are affected by rapamycin. Mice were intraperitoneally given rapamycin (0.1, 0.3, or 1.0 mg/kg); then, 30 min after, 5% formalin (10 μl) was subcutaneously injected into the right upper lip. The rubbing responses with the ipsilateral forepaw or hindpaw were counted for 45 min. High-dose rapamycin (1.0 mg/kg) produced significant antinociceptive effects in both the first and second phases of formalin test. The number of Fos-ir cells in the ipsilateral TNC was also reduced by high-dose rapamycin compared with vehicle-treated animals. Furthermore, the number of p-p38-ir cells the in ipsilateral TNC was significantly decreased in animals treated with high-dose rapamycin; p-p38 expression was co-localized in microglia, but not neurons and astrocytes. Therefore, the mTOR inhibitor, rapamycin, reduces orofacial nociception and Fos expression in the TNC, and its antinociceptive action on orofacial pain may be associated with the inhibition of p-p38 MAPK in the microglia.

• Journal of The Korean Society of Integrative Medicine
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• v.9 no.4
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• pp.1-9
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• 2021

Purpose : The purpose of this study was to investigate functional disability for the elderly in rural Korea and to identify influencing factors of functional disability. Methods : The data were collected for 76 community-dwelling elderly in rural area and above 65 years. We assessed cognitive function, functional disability, depression using LACLS, WHODAS 2.0, SGDS-K. Data were analyzed using descriptive statistics for general characteristics of subjects, Spearman's correlation among LACLS, SGDS-K, WHODAS 2.0, age, educational levels. And multiple regression was used to find influencing factors of functional disability. Results : As a result of this study, we identified that WHODAS 2.0 total score was 50.59, summary score was 9.94 and functional disability of the elderly in rural area is in the 70^th percentile. The highest level of disability occurred in areas related to 'life activities (household)', 'participation in society' and the lowest level of disability occured in areas of 'self-care', 'getting along with people'. Functional disability was significantly correlated with age (r=.398), cognitive function (r=-.547), depression (r=-.563) but not educational levels (r=-.215). Finally, we confirmed that depression (𝛽=.371), cognitive function (𝛽=-.263), widowed status (𝛽=.303), age (𝛽=.272), non-participation of community program (𝛽=.165) was significantly influencing factors of functional disability and the explanatory power of these factors was 52.80 %. Conclusion : This study revealed important factors of functional disability. Therefore, we need to consider these factors when we developed program related to health for the elderly (aged > 65 years) in rural Korea. Further, we need to standardize WHODAS 2.0 in order to enhance its applicability in clinical practices.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.285-292
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• 2005

Anti-reflection film was coated by using spherical silica nano colloids. Silica colloid sol was reserved between two inclined slide glasses by capillary force, and particles were convectively stacked to form a film onto the substrate as the water evaporates. As the sliding speed increased, the thickness of the film decreased and the wavelength at the maximum transmittance decreased. The microstructure observed by SEM showed that silica particles were nearly close packed, which enabled the calculation of the effective refractive index of the film. The film thickness was measured by proffer and calculated from the wavelength of maximum transmittance and the effective refractive index. The effective refractive index of the film could be controlled by a subtle controlling of the coating speed and by mixing two different sized silica particles. When the 100 nm and 50 m particles were mixed at 4:1-5:1 volume ratio, the maximum transmittance of $95.2\%$ for one-sided coating was obtained. This is the one that has increased by $3.8\%$ compared to bare glass substrate, and shows that $99.0\%$ of transmittance or $1.0\%$ of reflectance can be achieved by the simple process if both sides of the substrate are coated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.209-211
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• 2008

본 연구에서는 실리케이트 적색 형광체의 신뢰성을 향상시키기 위하여 $SiO_2$ 박막을 졸-겔(sol-gel) 방법으로 코팅하였으며, 봉지재의 종류에 따른 코팅된 형광체의 신뢰성 변화를 조사하였다. 졸-겔 코팅 후 형광체 표면을 관찰한 결과 졸-겔 코팅이 잘 이루어 졌음을 알 수 있었으며, 4회 코팅 후 박막의 두께는 약 150nm였다. 코팅하지 않은 형광체의 경우 봉지재에 따른 차이는 있었지만 500시간 경과 후 효율 감소율은 30% 이상이었으며 코팅 한 형광체의 경우는 에폭시, JCR6175가 10${\sim}$25%, EG6301은 10% 이내의 효율 감소율을 보였다. 한편 색좌표 경우 에폭시 봉지재가 약 0.02의 변화를 EG6301 봉지재의 경우 0.01 이내의 변화를 보였다.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].