• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.252-258
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• 2001

($Ba_{0.7}Sr_{0.3})TiO_3$thin films were perpared on ITO-coated glass substrate by spin-coating method. The sol was sonicated in an ultrasonic bath to promote homogenization and the results were compared with untreated case. By application of the sonication process, crystallization temperatures of films were reduced, microstructers of films were more uniform and denser and the surface roughness of the films was lower from 8.4nm to 5.6nm. In addition, optical transmittances and electrical properties of films prepraed from sonicated sol were superior to those of films from untreated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.853-857
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• 1995

ZrSiO4 powders were prepared from partially hydrolyzed solution of Si(OC2H5)4 and ZrOCl2.8H2O solution by the sol-gel method and formation rate of ZrSiO4 on the reaction parameter was investigated. In order to prepare homogeneous ZrSiO4 precursor gels, the H2O/Si(OC2H5)4 molar ratio of about 2, the pH of the ZrOCl2.8H2O solution fo about 4 and stirring time of the mixed solutions of about 2 hrs were appropriate. Formation of temperature of ZrSiO4 reduced about 15$0^{\circ}C$ by milling and formation of ZrSiO4 at 1300~135$0^{\circ}C$ showed an accelerative increase through the hedvall effect by silica.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.479-487
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• 1988

In this study we studied the function of Glycerol as a DCCA(Drying Control Chemical Additives) in the preparation of silica bulk glas through Sol-Gel method. We used TEOS(Tetra Ethyl Ortho Silicate) and maintained the mixing ratio of TEOS : H2O : EtOH : HCI as 1 : 4 : 4 : 0.0007(mol) and varied glycerol input quantity from 0.1vol% considering the ethnaol input quantity as 100vol%. We investigated the changes from Sol-Gel Synthetic solutions to the glass using DT-TG, FT-IR and other instruments. The results obtained from this experiment showed that the dried gels made from the synthetic solutions containing 0.1-1.0vol% of glycerol were easily heat-treated up to 85$0^{\circ}C$ so that transparant bulk silica glass was prepared.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.153-158
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{\circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.102-105
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• 2009

$Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ cathode materials have been synthesized by a microwave-assisted sol-gel method. The structure and electrochemical properties of $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ were studied by X-ray difftactometry (XRD), scanning electron microscopy (SEM) and charge-discharge cycler. The powder prepared by microwave assisted sol-gel method showed good crystallinity and well-defined facet shapes. The $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ electrode delivered a high discharge capacity of 230 $mAhg^{-1}$ at the specific current of 40 $mAg^{-1}$ (0.2 C rate) in the voltage range of 2.0${\sim}$4.8 V. About 60 % of the discharge capacity measured at 0.2 Crate (140 $mAhg^{-1}$) was maintained at a 6 C (1200 $mAg^{-1}$)rate. The cyclic property was also stable and it did not deteriorated at a high Crate.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.69-69
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• 2009

Al이 doping된 ZnO 투명전도막을 fusion 1737 기판위에 Sol- Gel법으로 제조하였다. 제조된 Sol은 48시간 이상 숙성하여 안정화 시킨 다음, 박막을 제조하여 doping한 Al의 at%에 따른 박막의 전기, 광학적 특성을 조사하였다. XRD 측정 결과 순수한 ZnO Sol로 제조된 박막의 경우보다 0.75at%의 Al을 첨가하였을 때 가장 강한 peak intensity를 얻을 수 있었으며, 또한 0.75at% 첨가 시 순수한 ZnO 투명전도막보다 3~4order 정도 낮은 비저항을 나타내었다. 광투과율은 Al의 첨가량에 관계없이 90%를 넘는 높은 값을 나타내었다.

• Journal of the Korean Electrochemical Society
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• v.12 no.4
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• pp.335-341
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• 2009

Organic-inorganic hybrid sol-gel matrices were used as hosts for chloro (5, 10, 15, 20-tetraphenylporphyrinato) cobalt (III) (Co[TPP]Cl), a known ionophore for nitrite. The sol-gel precursor was prepared by the reaction of (3-isocyanopropyl) triethoxysilane with 1,4-butanediol. An appropriate amount of the anion-exchanger, tridodecylmethylammonium chloride (TDMAC) and the plasticizer, tributylphosphate (DBP) were used as membrane additives. On mixing with an acidic catalyst, the sol-state precursors slowly gelled, yielding a membrane in which the active components, Co[TPP]Cl and TDMAC, were encapsulated. The performances of the sol-gel membrane-based electrodes were compared to those of Co[TPP]Cl-based poly(vinyl chloride) (PVC) membrane electrodes. Membranes with a molar ratio of Co[TPP]Cl: TDMAC (1 : 0.1) showed reasonable response slopes toward nitrite. The response slopes were typically 53 mV/decade between $10^{-5.4}$ and $10^{-1.0}\;M$. Selectivities toward nitrite over hydrophilic and small anions such as chloride were somewhat inferior to those observed with PVC-based membranes, but selectivities over lipophilic anions were quite similar. Reduced asymmetry potentials due to protein adsorption were found to occur with the sol-gel matrix relative to PVC-based films when the sensors were employed as a detector in flow-through configuration.

• Corrosion Science and Technology
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• v.20 no.4
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• pp.175-182
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• 2021

Magnesium alloy is limited in the industrial field because its standard electrode potential is -2.363 V vs. NHE (Normal Hydrogen Electrode) at 25 ℃. This high electrochemical activity causes magnesium to quickly corrode with oxygen in air; chemical conversion coating prevents corrosion but causes surface defects like cracks and pores. We have examined the anti-corrosion effect of sol-gel coating sealed on the defected conversion coating layer. Sol-gel coatings produced higher voltage current and smaller pore than the chemical conversion coating layer. The conversion coating on magnesium alloy AZ31 was prepared using phosphate-permanganate solution. The sol-gel coating was designed using trimethoxymethylsilane (MTMS) and (3-Glycidyloxypropyl) trimethoxysilane (GPTMS) as precursors, and aluminum acetylacetonate as a ring-opening agent. The thermal shock resistance was tested by exposing specimens at 140 ℃ in a convection oven; the results showed changes in the magnesium alloy AZ31 surface, such as oxidization and cracking. Scanning electron microscope (FE-SEM) analysis confirmed a sealed sol-gel coating layer on magnesium alloy AZ31. Electrochemical impedance spectroscopy (EIS) measured the differences in corrosion protection properties by sol-gel and conversion coatings in 0.35 wt% NaCl solution, and the potentiodynamic polarization test and confirmed conversion coating with the sol-gel coating show significantly improved resistance by crack sealing.