• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.329-331
• /
• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2(hr), respectively. The structural, dielectric and pyroelectric properties with addition of $Y_2O_3$ were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of $Y_2O_3$. Relative dielectric constant and dielectric loss of the specimen doped with 0.2wt% $Y_2O_3$ were 597 and 0.022, respectively. Remanent polarization and coercive field of the specimen doped with 0.4wt% $Y_2O_3$ were $8.5[{\mu}C/cm^2]$ and 10.2[kV/cm], respectively.

• 공업화학
• /
• 제3권3호
• /
• pp.482-490
• /
• 1992

세종류의 금속산화물 전극을 양극으로 사용하여 methanol 용액중에서 furfuryl alcohol을 양극산화 시켜 2,5-dimethoxy-2,5-dihydrofurfuryl alcohol을 전해합성 하였다. 각 전극들은 티타늄 재질상에 산화주석($SnO_2$)과 삼산화이안티몬($Sb_2O_3$)의 반도체 혼합물층을 전기로 내에어 만들고, 그 위에 양극산화방법으로 ${\alpha}-PbO_2$, ${\beta}-PbO_2$, $MnO_2$등의 금속산화물을 전착(electrodeposition)하여 3종의 전극을 제작하였다. 이산화납 전극이 이산화망간 전극에 비하여 양극 내식성이 우수하였으며 생성물의 수율(92%)도 백금전극을 사용했던 결과와 대등하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
• /
• pp.307-310
• /
• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1991년도 추계학술대회 논문집
• /
• pp.68-72
• /
• 1991

In this study, to improve temperature stability 0.05 Pb(Sn$\_$$\frac{1}{2}$/Sb$\_$$\frac{1}{2}$/O$_3$ - 0.35PbTiO$_3$ - 0.60PbZrO$_3$ + 0.4[wt%]MnO$_2$ piezoelctric oeramics of low dielectric constant and large mechanical quality factor were manufactured with the addition of Cr$_2$O$_3$by Hot Press method. And the SAW delay line was fabricated and the propagation characteristics of SAW was investigated, and the SAW filter was fabricated on C4 added by 0.2[wt%] Cr$_2$O$_3$and its frequency characteristics was investigated. The specimen, whose propagation characteristics of surface acoustic wave were the best, was C4 added by 0.2[wt%] Cr$_2$O$_3$, and its electromechanical coupling factor(ks$^2$) was 3.11[%] and its temperature coefficient of the center frequency (C$\_$fo/) was -21.27[ppm/$^{\circ}C$]. The 31[MHz] SAW IF filter of C4 scarcely had diffraction phenomena and its group delay time was 1.4673 ${\pm}$40[ns] in the pass band, and the insertion loss was -24.419[dB] on no impedance matching.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.746-748
• /
• 2002

The effect of $MnO_2$ addition in $0.05Pb(Sn_{0.5}Sb_{0.5})O_3-0.8PbZrO_3-0.15PbTiO_3$(0.05PSS-0.8PZ-0.15PT) ceramics on crystal structure and electrical properties were studied. The sintering temperature and time were $1230^{\circ}C{\sim}1270^{\circ}C$ and 2hr, respectively. Then crystal structure, dielectric and pyroelectric properties were investigated. All the poled specimens showed the lower dielectric constant and $tan{\delta}$ than the unpoled specimens. Dielectric constant at 1kHz of the 0.05PSS-0.8PZ-0.15PT(MnO2 0.3wt%) system specimen sintered at $1250^{\circ}C$ for 2hr were 270 and showed the lowest $tan{\delta}$ of 0.2% after poling of $2kV_{DC}/mm$ at $150^{\circ}C$ for 30 minutes. Pyroelectric coefficient was maximum value of $50nC/cm^2K$ and Curie temperature was $224^{\circ}C$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 C
• /
• pp.1352-1354
• /
• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.296-299
• /
• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.

• The Korean Journal of Ceramics
• /
• 제4권3호
• /
• pp.183-188
• /
• 1998

Gas sensitizations of tin oxide film were investigated by measuring the change of film resistance in various gas atmospheres such as $N_2,\; O_2,\; H_2O$. The main test sample, polycrystalline $SnO_2$ film containing small Sb as a dopant was prepared by a sputtering technique and showed a long term stability in base resistance and thus, in gas sensitivity. The adsorption of oxygen on the film surface as a type of $(O_{ads})$ at the temperature of around $300^{\circ}C$ played important roles in sensor operating mechanism. The roles were ⅰ) the increase of base resistance in ambient air, which consequently lead to high sensitivity and ⅱ) the promotion of fast recovery. The reaction of hydrogen gas with the already adsorbed $(O_{ads})$ ions was considered as a decisive sensitization mechanism of tin oxide film. However, the dissociation of hydrogen molecules on film surface, by direct donation of electron to film also took a major part in the sensitization. The effect of humidity on gas sensitization was found to be negligible at the sensor operating temperature of around $300^{\circ}C$.

• 한국환경보건학회지
• /
• 제35권3호
• /
• pp.201-208
• /
• 2009

Oxidation of phenol in aqueous media by electro-Fenton process using Ru-Sn-Sb/graphite electrode has been studied. Hydrogen peroxide was electrically generated by reaction of dissolved oxygen in acidic solutions containing supporting electrolyte and $Fe^{2+}$ was added in aqueous media. Phenol degradation experiments were performed in the presence of electrolyte media at pH 3. Effect of operating parameters such as current, electrolyte type (NaCl, KCl and $Na_2SO_4$) and concentration, $Fe^{2+}$ concentration, air flow rate and phenol concentration were investigated to find the best experimental conditions for achieving overall phenol removal. Results showed that current of 2 A, NaCl electrolyte concentration of 2g/l, 0.5M concentration of $Fe^{2+}$, air flow rate of 1l/min were the best conditions for mineralization of the phenol by electro-Fenton.

• 한국결정성장학회지
• /
• 제7권3호
• /
• pp.418-427
• /
• 1997

$La_2O_3$가 각각 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% 첨가된 $0.05pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_30.84PbZroO_3＋0.4Wt%MnO_2$ (이하 0.05PSS -0.11PT-0.84PZ+0.4wt%$MnO_2$)계를, $1250^{\circ}C$에서 $PbZrO_3$를 분위기 분말로 사용하여 성형체 무게의 1/2을 함께 넣고 소결체를 제조하여 그 특성을 분석하였다. 소결체의 밀도는 7.683 g/$\textrm {cm}^3$에서 7.515 g/$\textrm {cm}^3$ 범위였으며, 3 mole% $La_2O_3$를 첨가한 경우 가장 높은 값을 나타내었다. 0에서 5 mole% 범위에서 $La_2O_3$ 첨가량을 증가시킬 때 평균 입경이 9.0 $\mu \textrm{m}$에서 1.3 $\mu\textrm{m}$까지 감소되었다. 결정구조의 경우 $La_2O_3$첨가량을 0에서 1 mole%로 할 때 0.05PSS-0.11 PT-0,84PZ계에서 고용된 상을 형성하였으나 3, 5 mole%로 첨가량을 증가시킴에 따라 제2차 산이 형성되었고, 소결체를 $120^{\circ}C$ 또는 $140^{\circ}C$에서 $5 KV_{DC}$ /mm로 20분간 poling 전후에 $La_2O_3$ 첨가량이 0 에서 3 mlole%까지 증가될수록 1KHz에서의 유전 상수는 증가되었으며, 유전손실은 모든 경우에서 1 % 미만의 값을 나타내었다. $La_2$O$_3$첨가량이 0, 0.5, 1, 3 mole%로 증가됨에 따라 큐리온도가 208$^{\circ}C$, 183$^{\circ}C$, $152^{\circ}C$ 그리고 $127^{\circ}C$로 감소되었다. $La_2O_3$가 증가됨에 따라 대체로 $K_{p}$ 증가되었으며 0.7 mlole%의 $La_2O_3$를 첨가한 소결체를 $140^{\circ}C$에서 poling한 경우 가장 높은 $K_p$값으로 14.5 %를 나타내었다.