• 한국재료학회지
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• 제11권7호
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• pp.603-608
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• 2001

졸겔법에 의해 제조된$ MO-SiO_2$(M=Zn, Sn, In, Ag, Ni)이성분계 실리카 겔에서 금속이온의 종류에 따른 실리카 구조의 변화를 XRD, FT-lR, $^{29}$Si-NMR로 분석하였다. XRD peak을 관찰한 결과 $Ag-SiO_2$겔에서 $AgNO_3$의 부분적인 재결정화가 나타났지만, 첨가된 금속이온과 실리카 매트릭스의 결합에 의한 결정상은 관찰되지 않았다. FT-IR 분석결과 첨가되는 금속이온 중 Zn, Sn, In은 부분적으로 Si-O-M의 결합형태를 이루어 Si-O-Si 대칭 진동에 의한 흡수 peak의 위치를 변화시켰다. $^{29}$Si-NMR 관찰에 의해 Zn, Sn, In등의 금속이온은 실리카의 저온 졸겔 반응에 영향을 미치지 않고 불완전한 네트워크를 갖는 선형적 실리카 구조 내에서 비가교 산소와 결합하며 존재하였다. Ag, Ni는 실리카 네트워크가 형성되는 과정에서 실리카 형성을 위한 졸겔반응의 촉매로서 작용하여, 이러한 금속이온이 첨가된 실리카 네트워크는 보다 치밀한 구조적 특성을 나타내었다.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.29-35
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• 2003

SnAg, SnAgCu, SnCu 무연솔더합금을 주조 상태에서 냉간압연한 후 열적으로 안정화한 시편 (TS)과, 실제 솔더 범프와 유사한 미세구조의 수냉에 급속 냉각(WQ)된 시편 두가지를 $100^{\circ}C$에서 크리프 실험을 행하였다. 급속냉각한 시편의 냉각속도는 140-150 K/sec로 primary $\beta-Sn$ 크기가 TS 시편보다 5∼10배 정도 작았으며, 기지내 primary $\beta-Sn$이 차지하는 분율은 증가하였다. 반면에 공정상 내의 $Ag_3Sn$상의 크기는 더 작아졌다. 크리프 실험 결과 WQ 시편의 최소크리프 변형율 속도($\{beta}_{min}$)가 TS 보다 약 $10^2$배 정도 작았으며. 더 큰 파괴시간을 보였다. TS-SnAg의 크리프파괴는 $Ag_3Sn$ 또는 $Cu_6Sn_5$에서의 공공의 핵생성, power-law 크리프에 의한 공공의 성장, 그리고 크리프 공공의 상호 연결로 일어났으며, WQ-SnAgCu는 시편이 두께가 얇아 네킹에 의해 파괴가 일어났다.

• 소성∙가공
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• 제7권5호
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• pp.481-488
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• 1998

The active metal brazing was applied to bond Alumina and Ni-Cr steel by Ag-Cu-Zr-Sn alloy and the interfacial microstructure and reaction mechanism were investigated. Polycrystalline monoclinic $ZrO_2$ with a very fine grain of 100-150 nm formed at the alumina grain boundary contacted with Zr segregation layer at the interface. The $ZrO_2$ layer containing the inclusions and cracks were developed at the boundary of inclusion/$ZrO_2$ due to the difference in specific volume. The development of $ZrO_2$ at the interface was successfully explained by the preferential penetration of $ZrO_2$ at the interface was successfully explained by the preferential penetration of Zr atoms a higher concentration of oxygen and a high diffusion rate of Al ions into molten brazing alloy.

• 한국표면공학회지
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• 제52권3호
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• pp.145-149
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• 2019

Transparent and conductive ZnO/Ag/SnO2 (ZAS) tri-layer films were deposited onto glass substrates at room temperature by using radio frequency (RF) and direct current (DC) magnetron sputtering. The thickness values of the ZnO and $SnO_2$ thin films were kept constant at 50 nm and the value for Ag interlayer was varied as 5, 10, 15, and 20 nm. In the XRD pattern the diffraction peaks were identified as the (002) and (103) planes of ZnO, while the (111), (200), (220), and (311) planes could be attributed to the Ag interlayer. The optical transmittance and electrical resistivity were dependent on the thickness of the Ag interlayer. The ZAS films with a 10 nm thick Ag interlayer exhibited a higher figure of merit than the other ZAS films prepared in this study. From the observed results, a ZAS film with a 10 nm thick Ag interlayer was believed to be an alternative transparent electrode candidate for various opto-electrical devices.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.186-186
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• 2001

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.561-565
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• 2007

Because of a good wear resistance and a stable contact resistance, Ag-CdO is widely used as electrical contact material. But, the Cd-oxide mainly exists as a coarse particle and adversely affected to environment. As a reason, $Ag-SnO_2$ alloy has been developed. The Sn-oxide maintains stable and fine particle even at high temperature. In order to investigate the effect of Misch metal (Mm) additional that affects the formation of the oxide and the formation of fine matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Mm) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. The Mm addition makes Ag matrix more fine than no Mm addition. The reason is that the addition of Misch metal decreased a latent heat of fusion of alloy, as a result the rapid solidification effect of alloy is increased. The maximum hardness shows at 0.3 wt%Mm. after that the hardness is decreased until 0.4 wt% Mm, but still larger than no Mm addition alloy. At 0.5 wt% Mm alloy, the precipitation of Misch metal causes a decrease of hardness than no Mm addition alloy.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.19-27
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• 2003

플립칩 전자패키지에서 칩과 기판(PCB)를 연결할 때, 통상적으로 칩쪽은 금속패드/UBM 처리를 기판 쪽은 표면처리를 한 후 솔더로 연결하는데, 이 때 사용되는 UBM이나 표면처리에 따라, 칩/솔더, PCB/솔더에 생성되는 금속간 화합물의 종류와 두께 및 솔더의 조성이 변하게 되어 궁극적으로 솔더 접합부의 기계적 신뢰성에 영향을 주게 된다. 본 연구에서는 Cu와 Au/Ni의 두가지 금속 패드가 무연솔더의 저주기 피로특성에 어떠한 영향을 미치는 지에 대해 고찰해 보았다. 저주기 피로 실험은 Cu나 Au/Ni이 표면처리 된 기판에 무연솔더 (Sn-3.5Ag, Sn-3.5Ag-1.5Cu, Sn-3.5Ag-XBi(X=2.5, 7.5), Sn-0.7Cu)를 리플로하여 총변위를 변화시키면서 상온에서 시행하였다. 기판의 표면처리에 관계없이 Sn-3.5Ag, Sn-3.5Ag-XCu(X-0.75, 1.5), Sn-0.7Cu 합금이 Sn-3.5Ag-7.5Bi 합금보다 피로저항성이 현격히 좋았으며, Au/Ni 표면처리한 솔더 접합부가 Cu 처리한 경우보다 피로저항성이 뛰어난 것으로 나타났다. 파괴 후 단면을 조사한 결과 계면에 형성된 금속간 화합물 내에 미세균열이 발견되었는데, Cu 표면처리를 사용한 경우 더 많은 미세균열이 생성된 것을 볼 수 있었다. Sn-3.5Ag, Sn-3.5Ag-Cu(X=0.75, 1.5), Sn-0.7Cu 합금의 경우 금속간 화합물 내에 생기는 미세 균열이 거시 균열로 성장하지 않고 파단은 항상 솔더 내부로 일어난 반면. Bi를 함유한 솔더의 경우, 기판의 표면처리에 상관없이 금속간 화합물/솔더 계면으로 균열이 생성 진전되어 다른 솔더합금에 비해 열악한 피로저항성을 나타내는 것으로 보인다. 이것은 Bi의 금속간화 합물/솔더 입계 편석이나 Bi 합금이 다른 합금에 비해 높은 경도값을 가지는 것에 인한 것으로 보여 진다.

• 한국세라믹학회지
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• 제43권2호
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• pp.92-97
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• 2006

Dolomite type $BaSn(BO_3)_2$ ceramics with rhombohedral crystal structure has been synthesized via solid state reaction route. Dielectric properties were measured for the samples sintered at $1050\~1200^{\circ}C$ for 2 h in air. Dielectric constant, loss tangent, and temperature coefficient were increased with sintering temperature due to the evolution of $BaSnO_3$, secondary, phase. Optimum dielectric properties were obtained at the $BaSn(BO_3)_2$ ceramics sintered at $1100^{\circ}C.\;CuO/Bi_2O_3$ was added to $BaSn(BO_3)_2$ ceramics to lower the sintering temperature for LTCC application, then Co and Fe-based coloring agents were added for colorizing the LTCC tape. Typical dielectric properties of $BaSn(BO_3)_2$ ceramics with $5 wt\%\;CuO/Bi_2O_3\;and\;3wt\%$ Co-coloring agent that sintered at $900^{\circ}C$ were $\varepsilon_r=9.89,\;tan{\delta}=0.92\times10^{-3},\;and\;TCC=112ppm/^{\circ}C$. Thus obtained LTCC tape was co-fired with Ag paste for compatibility test and revealed no sign of Ag reaction with the ceramics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.169-170
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• 2008

In this study, low temperature sintering property of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with sintering adds were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_3O_8$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_3O_8$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. In the case of SnO addition, the bulk density and dielectric constant were increased but quality factor was decreased with amount of SnO additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$+xwt%SnO ceramics were shifted to negative direction. The dielectric constant, quality factor and TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with 2.5wt% addition of SnO sintered at $830^{\circ}C$ for 1hr were 29.86, 35,800 GHz, -0.58 ppm/$^{\circ}C$, respectively.

• Journal of Welding and Joining
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• 제35권3호
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• pp.7-14
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• 2017

The effect of high temperature-moisture on corrosion and mechanical properties for Sn-0.7Cu, Sn-3.0Ag-0.5Cu (SAC305) solders on flexible substrate was studied using Highly Accelerated Temperature/Humidity Stress Test (HAST) followed by three-point bending test. Both Sn-0.7Cu and SAC305 solders produced the internal $SnO_2$ oxides. Corrosion occurred between the solder and water film near flexible circuit board/copper component. For the SAC305 solder with Ag content, furthermore, octahedral corrosion products were formed near Ag3Sn. For the SAC305 and Sn-0.7Cu solders, the amount of internal oxide increased with the HAST time and the amount of internal oxides was mostly constant regardless of Ag content. The size of the internal oxide was larger for the Sn-0.7Cu solder. Despite of different size of the internal oxide, the fracture time during three-point bending test was not significantly changed. It was because the bending crack was always initiated from the three-point corner of the chip. However, the crack propagation depended on the oxides between the flexible circuit board and the Cu chip. The fracture time of the three-point bending test was dependent more on the crack initiation than on the crack propagation.