• 제목/요약/키워드: $Si_3N_4/SiC$

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InAs 양자점 형성 방법이 양자점 적외선 소자 특성에 미치는 효과 (Effect of Growth Methods of InAs Quntum Dots on Infrared Photodetector Properties)

  • 서동범;황제환;오보람;노삼규;김준오;이상준;김의태
    • 한국재료학회지
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    • 제28권11호
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    • pp.659-662
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    • 2018
  • We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.

음식물쓰레기 세정산발효액을 외부탄소원으로 주입한 SBR 공정에서 질소 및 인 제거 (Nitrongen and Phosphorus Removal using Elutriated Acids of Food Waste as an External Carbon Source in SBR)

  • 권구호;김시원;이민재;민경석
    • 한국물환경학회지
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    • 제22권3호
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    • pp.462-467
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    • 2006
  • An improvement of nitrogen and phosphorus removal in SBR using the elutriated acids from the food waste as an external carbon source was investigated in this study. The food waste was elutriated at $35^{\circ}C$ and pH 9 to produce the external carbon source. The elutriate of food waste were continuously collected. The elutriated liquid contained VFAs of 39,180 mg/L representing soluble COD of 44,700 mg/L. The SBR showed poor denitrification and EBPR (enhanced biological phosphorus removal) without elutriated VFAs addition. An average denitrification rate was 0.4 mg NOx-N/g MLVSS/day. In turn, EBPR was also inhibited by this poor denitrification because the remaining nitrate in anaerobic phase resulting a poor denitrification. On the other hand, the denitrification in anoxic phase significantly improved with an elutriated VFAs addition. Nitrate removal was 82% while the denitrification rate was 2.9 mg NOx-N/g MLVSS/day with 18.4 mL/cycle of elutriated VFAs. With the enhanced denitrification, nitrate concentration in anaerobic phase could effectively be controlled to a very low level. The elimination of nitrate inhibition in anaerobic phase resulted enhancement of EBPR. The specific phosphate release rate was $1.9mg\;PO_4^{3-}-P/g\; MLVSS/day$ with less than 0.5 mg/L of $PO_4^{3-}-P$ concentration.

용융탄산염에 대한 스테인레스강의 내식성 향상을 위한 NiAl 피복에 관한 연구 (Study on the NiAl Coating for Corrosion Resistance of Stainless Steel in Molten Carbonate Salt)

  • 황응림;강성군
    • 한국재료학회지
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    • 제7권1호
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    • pp.76-80
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    • 1997
  • 용융탄산염 연료전지 분리판의 wet-seal부의 내식성 향상을 위한 NiAl 피복공정이 조사되었다. AlSl 316 스테인레스강위에 Ni과 Al를 순차적으로 피복한 후, $800^{\circ}C$에서 3시간 열처리하여 NiAl상이 형성됨을 확인할 수 있었다. NiAl상이 피복된 스테인레스강은 $650^{\circ}C$, 용융탄산염($62^{m}/_{o}Li_2CO_3-38^{m}/_{o}/K_{2}CO_{3}$)내에서 침지시험을 통해 내식성이 평가되었는데, AISI 316 스테인레스강에 비해 우수한 내식성을 보였다. 이는 표면에 치밀하게 형성된 AI 산화물층에 의한 것으로 판단되었다.

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Triptolide Inhibits the Proliferation of Immortalized HT22 Hippocampal Cells Via Persistent Activation of Extracellular Signal-Regulated Kinase-1/2 by Down-Regulating Mitogen-Activated Protein Kinase Phosphatase-1 Expression

  • Koo, Hee-Sang;Kang, Sung-Don;Lee, Ju-Hwan;Kim, Nam-Ho;Chung, Hun-Taeg;Pae, Hyun-Ock
    • Journal of Korean Neurosurgical Society
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    • 제46권4호
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    • pp.389-396
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    • 2009
  • Objective : Triptolide (TP) has been reported to suppress the expression of mitogen-activated protein kinase (MAPK) phosphatase-1 (MKP-1), of which main function is to inactivate the extracellular signal-regulated kinase-1/2 (ERK-1/2), the p38 MAPK and the c-Jun N-terminal kinase-1/2 (JNK-1/2), and to exert antiproliferative and pro-apoptotic activities. However, the mechanisms underlying antiproliferative and pro-apoptotic activities of TP are not fully understood. The purpose of this study was to examine whether the down-regulation of MKP-1 expression by TP would account for antiproliferative activity of TP in immortalized HT22 hippocampal cells. Methods : MKP-1 expression and MAPK phosphorylation were analyzed by Western blot. Cell proliferation was assessed by $^3H$-thymidine incorporation. Small interfering RNA (siRNA) against MKP-1, vanadate (a phosphatase inhibitor), U0126 (a specific inhibitor for ERK-1/2), SB203580 (a specific inhibitor for p38 MAPK), and SP600125 (a specific inhibitor for JNK-1/2) were employed to evaluate a possible mechanism of antiproliferative action of TP. Results : At its non-cytotoxic dose, TP suppressed MKP-1 expression, reduced cell growth, and induced persistent ERK-1/2 activation. Similar growth inhibition and ERK-1/2 activation were observed when MKP-1 expression was blocked by MKP-1 siRNA and its activity was inhibited by vanadate. The antiproliferative effects of TP, MKP-1 siRNA, and vanadate were significantly abolished by U0126, but not by SB203580 or SP600125. Conclusion : Our findings suggest that TP inhibits the growth of immortalized HT22 hippocampal cells via persistent ERK-1/2 activation by suppressing MKP-1 expression. Additionally, this study provides evidence supporting that MKP-1 may play an important role in regulation of neuronal cell growth.

마찰교반접합된 9% Ni 강의 미세조직 및 기계적 특성에 관한 연구 (Study on microstructure and mechanical properties of friction stir welded 9% Ni steel)

  • 최돈현;안병욱;최정현;;연윤모;송건;이종섭;정승부
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2009년 추계학술발표대회
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    • pp.49-49
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    • 2009
  • 마찰교반접합법은 특정한 회전수로 회전하는 용접 툴을 이용하여 접합하고자 하는 피접합재의 맞댄면에 삽입시킨 후 툴을 이동시키거나 혹은 시편을 견고하게 고정시킨 장치(backing plate)가 움직여 고상 상태에서 접합이 이루어진다. 알루미늄, 마그네슘 등 비교적 융점이 낮은 저융점 재료의 재료에 처음 적용이 되어 많은 연구가 활발히 진행되었고 타 용접방법에 비해 우수한 접합특성을 나타내었다. 최근 이러한 마찰교반접합은 이러한 저융점 재료를 넘어서 스틸, 타이타늄, 니켈 등과 같은 고융점 재료 등에 대한 적용이 늘어나고 있다. 마찰교반접합을 이용하여 이러한 고융점 재료의 접합 경우 내마모성 및 내열성 등의 내구성이 갖추어진 툴과 이러한 툴을 냉각시킬 수 있는 냉각 장치 등이 필요로 하나 경제적 측면이나 접합부의 우수한 특성 등을 고려 할 때 그 적용 및 발전 가능성이 매우 높다고 볼 수 있다. 최근 무공해 연료로 각광받고 있는 액화천연가스 (LNG)의 수요가 급증함에 따라 LNG 저장탱크 소재로 널리 사용되고 있는 9% Ni강의 수요 또한 증가하고 있는 상황이다. 하지만 9% Ni 강은 극저온용 소재로 용접부의 저온인성 ($-196^{\circ}C$)이 가장 중요하기 때문에 저온인성을 확보하고자 Inconel 계나 Hastelloy계 등의 니켈 기 합금을 용접재료로 사용하고 있으나 이러한 용접재료는 가격이 매우 고가이며 또한 용접 후 용접부의 강도가 낮다는 문제가 제기되고 있다. 또한 LNG 탱크 제작시 사용되는 용접법은 GTAW, SAW 및 SMAW 이지만 국내에서는 주로 SMAW에 의존하고 있는 실정인 관계로 보다 더 경제적인 용접 프로세스의 적용 가능성이 검토되고 있는 상황이다. 본 연구에서는 마찰교반용접을 이용하여 두께 4mm의 9% Ni 강에 대해 맞대기 마찰교반접합을 실시하였다. 툴 회전 속도 및 접합 속도를 고정한 상태에서 접합을 실시 하였으며 접합 시 툴은 $Si_3N_4$로 제작된 툴을 사용하였다. 접합 후 외관상태 점검, 미세조직 관찰, 경도, 인장 강도 및 저은 충격 측정 등의 실험을 실시하였고, 이러한 결과를 이용하여 미세조직과 기계적 특성과의 관련성을 조사하였다.

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Antifungal Activity of Eucalyptus-Derived Phenolics Against Postharvest Pathogens of Kiwifruits

  • Oh, Soon-Ok;Kim, Jung-A;Jeon, Hae-Sook;Park, Jong-Cheol;Koh, Young-Jin;Hur, Hyun;Hur, Jae-Seoun
    • The Plant Pathology Journal
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    • 제24권3호
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    • pp.322-327
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    • 2008
  • Antifungal activities of natural substrances from Eucalyptus darlympleana, E. globules, E. gunnii and E. unigera were evaluated against postharvest pathogens of kiwifruits, Botrytis cinerea, Botryosphaeria dothidea, and Diaporthe actinidiae, to screen effective natural substances as an alternative to chemical fungicides. Methanol extract of the Eucalyptus trees showed strong antagonistic activity against the pathogenic fungi. Among them, E. unigera and E. darlympleana effectively inhibited mycelial growth of the pathogens. For chemical identification of the antifungal substances, the methanol extract of E. darlympleana leaves was successively partitioned with $CH_2Cl_2$, EtOAc, n-BuOH and $H_2O$. Among the fractions, $CH_2Cl_2$ and n-BuOH showed strong inhibitory activity of mycelial growth of the fungi. Five compounds were isolated from EtOAc and n-BuOH fractions subjected to $SiO_2$ column chromatography. Two phenolic compounds(gallic acid and 3,4-dihydroxybenzoic acid) and three flavonoid compounds(quercetin, quercetin-3-O-$\alpha$-L-rhamnoside, quercetin-3-O-$\beta$-glucoside) were identified by $^1H$-NMR and $^{13}C$-NMR spectroscopy. Among them, only gallic acid was found to be effective in mycelial growth and spore germination of B. cinerea at relatively high concentrations. The results suggest that gallic acid can be a safer and more acceptable alternative to current synthetic fungicides controlling soft rot decay of kiwifruit during postharvest storage.

PMF 모델을 이용한 대기 중 PM-10 오염원의 확인 (Source Identification of Ambient PM-10 Using the PMF Model)

  • 황인조;김동술
    • 한국대기환경학회지
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    • 제19권6호
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    • pp.701-717
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    • 2003
  • The objective of this study was to extensively estimate the air quality trends of the study area by surveying con-centration trends in months or seasons, after analyzing the mass concentration of PM-10 samples and the inorganic lements, ion, and total carbon in PM-10. Also, the study introduced to apply the PMF (Positive Matrix Factoriza-tion) model that is useful when absence of the source profile. Thus the model was thought to be suitable in Korea that often has few information about pollution sources. After obtaining results from the PMF modeling, the existing sources at the study area were qualitatively identified The PM-10 particles collected on quartz fiber filters by a PM-10 high-vol air sampler for 3 years (Mar. 1999∼Dec.2001) in Kyung Hee University. The 25 chemical species (Al, Mn, Ti, V, Cr, Fe, Ni, Cu, Zn, As, Se, Cd, Ba, Ce, Pb, Si, N $a^{#}$, N $H_4$$^{+}$, $K^{+}$, $Mg^{2+}$, $Ca^{2+}$, C $l^{[-10]}$ , N $O_3$$^{[-10]}$ , S $O_4$$^{2-}$, TC) were analyzed by ICP-AES, IC, and EA after executing proper pre - treatments of each sample filter. The PMF model was intensively applied to estimate the quantitative contribution of air pollution sources based on the chemical information (128 samples and 25 chemical species). Through a case study of the PMF modeling for the PM-10 aerosols. the total of 11 factors were determined. The multiple linear regression analysis between the observed PM-10 mass concentration and the estimated G matrix had been performed following the FPEAK test. Finally the regression analysis provided source profiles (scaled F matrix). So, 11 sources were qualitatively identified, such as secondary aerosol related source, soil related source, waste incineration source, field burning source, fossil fuel combustion source, industry related source, motor vehicle source, oil/coal combustion source, non-ferrous metal source, and aged sea- salt source, respectively.ively.y.

Ampoule-tube 법으로 Phosphorus를 도핑한 P형 ZnO 박막의 광학적 특성 분석 (Alanysis of the Optical Properties of p-type ZnO Thin Films Doped by P based on Ampouele-tube Method)

  • 유인성;오상현;소순진;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.145-146
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    • 2006
  • The most Important research topic in the development of ZnO LED and LD is the production of p-type ZnO thin film that has minimal stress with outstanding stoichiometric ratio. In this study, Phosphorus diffused into the undoped ZnO thin films using the ampoule-tube method for the production of p-type znO thin films. The undoped ZnO thin films were deposited by RF magnetron sputtering system on $GaAs_{0.6}P_{0.4}$/GaP and Si wafers. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed and $630^{\circ}C$ during 3hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 $cm^2$/Vs compared with other studies PL spectra measured at 10K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365nm ~ 415nm and 365nm ~ 385nm.

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Fabrication of MFISFET Compatible with CMOS Process Using $SrBi_2Ta_2O_9$(SBT) Materials

  • You, In-Kyu;Lee, Won-Jae;Yang, Il-Suk;Yu, Byoung-Gon;Cho, Kyoung-Ik
    • Transactions on Electrical and Electronic Materials
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    • 제1권1호
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    • pp.40-44
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    • 2000
  • Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

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RF 스퍼터링과 이온소스 복합방식에 의한 플라스틱사출금형(SKD11)의 DLC막 응용 (The Application of DLC(diamond-like carbon) Film for Plastic Injection Mold by Hybrid Method of RF Sputtering and Ion Source)

  • 김미선;홍성필
    • 한국표면공학회지
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    • 제42권4호
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    • pp.173-178
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    • 2009
  • DLC film was synthesized on plastic injection mold(SKD11, $30\;mm\;{\times}\;19\;mm\;{\times}\;0.5\;mm$) and Si(100) wafer for 2 h at $130^{\circ}C$ under 6 mTorr using hybrid method of rf sputtering and ion source. The obtained film was analysed by Raman spectroscopy, AFM, TEM, Nano indenter and scratch tester, etc. The film was defined as an amorphous phase. In the Raman spectrum, broad peak of $sp^2$-bonded carbon attributed to graphite at $1550\;cm^{-1}$ were observed, and the ratio of ID($sp^3$ diamond intensity)/IG($sp^2$ graphite intensity) was approximately 0.54. The adhesion of DLC film was more than 80 N with scratch tester when $0.2\;{\mu}m$ thickness Cr was coated as interlayer. The micro-hardness was distributed at 35~37 GPa. The friction coefficient was 0.02~0.07, and surface roughness(Ra) was 0.34~1.64 nm. The lifetime of DLC coated plastic injection mold using as a connector part in computer was more than 2 times of non-coated mold.