• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.855-858
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• 2003

Carbon nanotubes (CNTs) were grown on Ni-coated TiN/Si substrate by microwave plasma chemical vapor deposition using mixture gas of $H_2/CH_4$ at low temperature of 500 $^{\circ}C$. Average diameter of CNTs could be easily controlled by $H_2$ plasma pretreatment time before CNTs growth. The turn-on voltages of CNT emitters were varied from 3.5 $V/{\mu}m$ to 9 $V/{\mu}m$ according to the hydrogen pretreatment conditions. The close relationship between electron emission characteristics and pretreatment time indicates that pretreatment condition can be a key process parameter in CNTs growth for field emission displays..

• Journal of the Korean Ceramic Society
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• v.44 no.10
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• pp.585-588
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• 2007

Silicon nitride films for an anti-reflection coating were deposited on silicon via RF magnetron sputtering using a $Si_3N4$ target. The best result was obtained at the sputtering condition of 340 W RF power, 5 mtorr Ar atmosphere, $100^{\circ}C$ substrate temperature. The films showed 7.9% reflectance minimum with 2.35 refractive index. 0.21 absorption coefficient at 66.6 nm thickness. The surface morphology showed a smooth and dense film with good adhesion to silicon surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.143-143
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• 2003

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1280-1282
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• 1997

The oxynitride films were photo-chemically deposited by ArF(wave length: 193nm) excimer laser CVD used to excite and dissociate gas phases $Si_2H_6$, $N_2O$, and $NH_3$ molecules. We obtained various electrical properties when we varied wafer cleaning procedures consisted of a conventional RCA and a two-dip step[4]. The results show the films have low leakage currents and good TZDB properties. We also analyzed the composition of the oxynitride films which have homogeneous composition throughout the film.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.795-801
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• 1994

The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.624-627
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• 2001

Two kinds of Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$, the sintering samples and zone melting samples, were heat treated under pure Ar at 95$0^{\circ}C$. The substitution of Nd ion for Ba ion in the Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ before and after the heat treatment were investigated by XRD. In order to know the effects of the heat treatment, the T$_{c}$ and J$_{c}$ of samples with the heat treatment and those without the heat treatment by Ar were comparatively studied. The results show that the substitution of Nd for Ba decreased, T$_{c}$, and J$_{c}$ increased after the treatment under Ar at 95$0^{\circ}C$. The Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{7-{\delta}}$ samples were oxygenated under pure oxygen at 30$0^{\circ}C$. From the XRD pattern it was found that the sample with x< 0.4 could transfer from tetragonal phase to orthorhombic phase after the oxygenation, but the sample with x>0.4 could not make the phase transition even after a long time oxygenation.ion even after a long time oxygenation.ation.n.ation.ation.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.395-400
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• 2007

Ambient drying sol-gel processing was used for monolithic silica ambigels in the temperature range of $130-250^{\circ}C$. A new method of mesopore ambigels, which mean the aerogels prepared by ambient pressure drying process synthesis, is suggested at first. This method includes two important approaches. The first point is that $SiO_{2}$ surface modification of wet gel was performed by trimethylchlorosilane in n-butanol solution. This procedure is provided the silica gel mesopore structure formation. The second point is a creation of the ternary azeotropic mixture water/n-butanol/octane as porous liquid, which is effectively provided removing of water such a low temperature by 2 step drying condition under ambient pressure. The silica aerogels, which were prepared by ambient pressure drying from azeotropic mixture of water/n-butanol/octane, are transparent, crack-free and mesoporous (pore size ${\sim}$ 5.6 nm) with surface area of ${\sim}$ $923{\;}m^2/g$, bulk density of $0.4{\;}g/cm^3$ and porosity of 85 %.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.139-144
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• 2003

A flat type micro gas sensor was fabricated on the p-type silicon wafer with low stress Si$_3$N$_4$, whose thickness is 2 ${\mu}{\textrm}{m}$, using MEMS technology. WO$_3$ thin film as a sensing material for detection of NO$_2$ gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$-$600^{\circ}C$) for one hour. NO$_2$ sensitivities were investigated for the WO$_3$ thin films with different annealing temperatures. The highest sensitivity was obtained for the samples annealed at $600^{\circ}C$ when it was operated at 20$0^{\circ}C$. The results of XRD analysis showed the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibits higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}/R_{air},$ operating at 20$0^{\circ}C$ to 5 ppm NO$_2$ of the sample annealed at $600^{\circ}C$ were approximately 90.

• Journal of Korean Society on Water Environment
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• v.28 no.5
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• pp.723-728
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• 2012

In this study, zeolites were synthesized by a fusion and a hydrothermal methods using a coal fly ash and a waste catalyst. The recovery performance of metal ions on the structure property of synthetic zeolites was evaluated as comparing the adsorption kinetics (Lagergen 2nd order model) and isotherm (Langmuir model) of $Co^{2+},\;Ni^{2+}$, and $Cu^{2+}$ ions. The synthetic zeolites (Z-C1 and Z-W5) were similarly assigned to XRD peaks in a reagent grade Na-A zeolite (Z-WK : $Na_{12}Al_{12}Si_{12}O_{48}\;27.4H_2O$). Adsorption rates of Z-W5 and Z-C1 were in the order of $Cu^{2+}\;>\;Co^{2+}\;>\;Ni^{2+}\;and\;Ni^{2+}\;>\;Cu^{2+}\;>\;Co^{2+}$, respectively. They had influenced upon structure properties of zeolite. Selectivities of metal ions and maximum equilibrium adsorption capacities, $q_{max}$, in Z-C1 and Z-W5 were in the order of $Ni^{2+}$ (127.9 mg/g) > $Cu^{2+}$ (94.7 mg/g) > $Co^{2+}$ (82.6 mg/g) and $Cu^{2+}$ (141.3 mg/g) > $Co^{2+}$ (122.2 mg/g) > $Ni^{2+}$ (87.6 mg/g), respectively. The results show that the synthetic zeolites, Z-C1 and Z-W5, are able to recover metal ions selectively in wastewater.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.