• Journal of the Korean Ceramic Society
• /
• v.47 no.6
• /
• pp.572-577
• /
• 2010

Reaction-bonded $Si_3N_4$ has cost-reduction merit because inexpensive silicon powder was used as a start material. But its density was not so high enough to be used for structural materials. So the sintered reaction-bonded $Si_3N_4$techniques were developed to solve the low density problem. In this study the sintered reaction-bonded $Si_3N_4$ manufacturing method by using polymer precursor which recently attained significant interest owing to the good shaping and processing ability was proposed. The formations, properties of reaction-bonded $Si_3N_4$ from silicon and polysilazane mixture were investigated. High density reaction-bonded $Si_3N_4$ was manufactured from silicon and silicon-containing preceramic polymers and post-sintering technique. The mixtures of silicon powder and polysilazane were prepared and reaction sintered in $N_2$ atmosphere at $1350^{\circ}C$ and post-sintered at 1600~$1950^{\circ}C$. Density and phase were analyzed and correlated to the resulting material properties.

• Korean Journal of Materials Research
• /
• v.1 no.1
• /
• pp.9-17
• /
• 1991

TiC coating formed on $Si_3N_4-TiC$ composite ceramic by chemical vapor deposition (CVD) has an improved microstructures, better thermal shock resistance and interfacial bonding than TiN coating does. TiN coating formed by CVD, however, has lower friction coefficients against steels and better chemical stability. The experimental results indicate that the coated insert is superior to the uncoated one in flank and crater wear resistance. And the multilayer coating shows an improved wear resistance than the monolayer coating.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.236-242
• /
• 2001

HfN/Si$_3$N$_4$and NbN/Si$_3$N$_4$ multilayer coatings were deposited onto a high speed tool steel substrate by reactive sputtering and their mechanical properties were evaluated in terms of the dependence of hardness and adhesion strength on the sputter deposition process parameters. The hardnesses of both HfN/Si$_3$N$_4$and NbN/Si$_3$N$_4$ multiplayer coatings increase up to the flux ratio of 0.4 but nearly do not change after that as the $N_2$/Ar flux ratio in nitride sputter deposition increases. The hardnesses of both multiplayer coatings nearly do not change with annealing at low temperatures but decrease owing to oxidation with annealing at a high temperature like 80$0^{\circ}C$ after depositing the layers by sputtering. Post-annealing at low temperatures increases the adhesion strength of the multilayers. but high temperature annealing is not desirable since it decreases the adhesion strength besides the hardness deterioration.

• Polymer Science and Technology
• /
• v.8 no.3
• /
• pp.293-297
• /
• 1997

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1091-1092
• /
• 2006

Silicon nitride - silicon carbide composite was developed by using an abrasive SiC powders as a raw material. The composites were prepared by mixing abrasive SiC powder with silicon, pressing and sintering at $1400^{\circ}C$ under nitrogen atmosphere in atmosphere controlled vacuum furnace. The proportion of silicon in the initial mixtures varied from 20 to 50 wt%. After sintering, crystalline phases and microstructure were characterized. All composites consisted of ${\alpha}-Si_3N_4$ and ${\beta}-Si_3N_4$ as the bonding phases in SiC matrix. Their physical and mechanical properties were also determined. It was found that the density of the obtained composites increased with an increase in the $Si_3N_4$ content formed in the reaction.

• Journal of the Korean Society of Safety
• /
• v.13 no.4
• /
• pp.131-136
• /
• 1998

The creep behavior and failure mechanism of the 30 vol% hot-pressed $SiC_t/Si_3N_4$ ceramic composite was experimentally investigated at $1200^{\circ}C$ and at various stress levels in air. The creep threshold stress for zero creep rate after 100 hr was found to be approximately 60 MPa. The stress exponent was estimated to be n~1, which suggests that fiber-reinforcement reduced the stress sensitivity of the HPSN matrix with the stress exponent of 2. The tertiary stage leading to creep rupture was found at 250 MPa but was very short. The microstructure of the crept specimen showed random fiber fracture and no matrix cracking. Interfacial debonding was absent.

• Journal of the Korean Ceramic Society
• /
• v.31 no.2
• /
• pp.129-136
• /
• 1994

Si3N4 with 6w/o Y2O3 and 1.5w/o Al2O3 has been gas pressure sintered and its densification behavior and the effect of the sintering variables on the microstructure and mechanical properties were investigated. Densification rate was higher at temperature below 1775$^{\circ}C$ and between 187$0^{\circ}C$ and 195$0^{\circ}C$ than between 1775$^{\circ}C$ and 187$0^{\circ}C$. The faster densification at temperature between 187$0^{\circ}C$ and 195$0^{\circ}C$ was thought to be due to the increased amount of liquid phase resulting from the increased amount of Si3N4 dissolving in the liquid. $\beta$-Si3N4 and Y-disilicate at temperatures below 1775$^{\circ}C$, and only $\beta$-Si3N4 at 187$0^{\circ}C$ and above were detected by XRD analysis. Three different two-step schedules were employed to obtain sintered body with above 99% theoretical density and to investigate the effect of the sintering variables on the density, the microstructure and the mechanical properties of the sintered body. The sintered density did not change with the heating rate, and the microstructure became coarser as the temperature increased. The strength decreased with the width of $\beta$-Si3N4 grain, while the fracture toughness increased with the square root of it. A ceramic cutting tool made of the sintered body showed an uniform flank wear after the cutting test.

• Journal of the Korean Ceramic Society
• /
• v.53 no.6
• /
• pp.622-627
• /
• 2016

The effects of the debinding atmosphere on the properties of sintered reaction-bonded $Si_3N_4$ (SRBSN) ceramics prepared by tape casting method were investigated. Si green tape was produced from Si slurry of Si powder, using 11.5 wt% polyvinyl butyral as the organic binder and 35 wt% dioctyl phthalate as the plasticizer. The debinding process was conducted in air and $N_2$ atmospheres at $400^{\circ}C$ for 4 h. The nitridation process of the debinded Si specimens was performed at $1450^{\circ}C$, followed by sintering at $1850^{\circ}C$ and 20 MPa. The results revealed that the debinding atmosphere had a significant effect on $Si_3N_4$ densification and thermal conductivity. Owing to the higher sintered density and larger grain size, the thermal conductivity of $Si_3N_4$ specimens debinded in air was higher than that of the samples debinded in $N_2$. Thus, debinding in air could be suitable for the manufacture of high-performance SRBSN substrates by tape casting.

• Journal of the Korean Ceramic Society
• /
• v.26 no.3
• /
• pp.390-394
• /
• 1989

The stored elastic strain energy due to the thermal expansion mismatch between the thermally oxidized crystalline layer (cristobalite) and CVD Si3N4($\alpha$-Si3N4) on cooling form high oxidation temperature (1000-140$0^{\circ}C$) to room temperature, releases through the crazing of film and lifting at the SiO2/Si3N4 interface. The ratial equation (1/n) which corresponds to the ratio of the relaxation of the stored elastic stain energy due to crazing of film to the total energy, is derived under the assumption of the square crazed pattern, as follow. 1/n={8${\gamma}$(1-v)2}/(ΔL2dE) The ratial equation suggests the reason for the lifting at the SiO2/Si3N4 interface which was observed in this research.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1526-1528
• /
• 2003

본 연구에서는 P-type Si wafer에 1000[$^{\circ}C$]의 조건에서 열산화방식으로 성장시킨 산화막($SiO_2$) 두께 3000[${\AA}$] 그 위에 APCVD방법으로 형성시킨 질화막($Si_3N_4$)의 두께 500[${\AA}$], 1500[${\AA}$]인 시료에 대하여 전기적 특징 중 유전정접 특성에 관하여 조사하였다. [1] 또한 각각의 두께에 대하여 측정 온도범위 상온${\sim}150[^{\circ}C]$ 와 인가전압 범위 1[V]${\sim}$20[V]에서 유전정접의 주파수 의존성과 온도 의존특성을 조사하고 특히 정전용량 변화에 따른 유전특성에 대하여 조사하고 변환기 소자재료 개발을 위한 기초물성을 실험한 결과를 보고한다.